New interesting luminescent α-sialon (M(m/val+)val+ Si12-(m+n) Al(m+n)OnN(16−n)) (M=Ca, Y) materials doped with Ce, Tb, or Eu have been prepared and their luminescence properties studied. These show that Tb and Ce are in the 3+ and Eu in the 2+ state. Low-energy 4f↔5d transitions are observed as compared to the luminescence of these ions doped in oxidic host-lattices. This is partially explained by the nitrogen-rich coordination of the rare-earth ion and partially by the narrow size of the lattice site. The latter gives rise to a strong crystal-field splitting of the 5d band and a rather large Stokes shift for Ce3+ and Eu2+ (6500–7500 and 7000–8000 cm−1, respectively). For (Y,Tb)-α-sialon the Tb3+ 4f→5d excitation band (∼260 nm) is in the low-energy host-lattice absorption band (⩽290 nm), giving rise to a strong absorption for 254-nm excitation, but a low quantum efficiency. The latter is due to photoionization processes or selective excitation of Tb3+ at the defect-rich surface, resulting in radiationless transitions. Ce- and Eu-doped Ca–α-sialon show bright long-wavelength luminescence (maxima at 515–540 and 560–580 nm for Ce and Eu, respectively) with a high quantum efficiency and high absorption for 365- and 254-nm excitation. The Eu2+ emission intensity and absorption increases for increasing m, which is explained by the Eu2+ richer α-sialon composition. The position of the Eu2α emission does not shift with changing composition of the host-lattice (m, n values), indicating that the local coordination of the Eu2+ ion is hardly dependent on the matrix composition.
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