Etch Profile Research Articles

Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions.

Molybdenum (Mo) has emerged as a promising material for advanced semiconductor devices, especially in the design and fabrication of interconnects requiring sub-10nm metal nanostructures. However, current wet etching methods for Mo using aqueous solutions struggle to achieve smooth etching profiles at such scales. To address this problem, we explore wet chemical etching of patterned Mo nanowires (NWs) using an organic solution: ceric ammonium nitrate (CAN) dissolved in acetonitrile (ACN). In this study, we demonstrate two distinct etching pathways by controlling the reaction temperature: i) digital cyclic scheme at room temperature, with a self-limiting Mo recess per cycle of ≈1.6nm, and ii) direct etching at elevated temperature (60°C), with a time-controlled Mo recess of ≈2nm min-1. These methods not only offer a highly controllable nanoscale Mo etching but also ensure smooth and uniform etching profiles independent of the crystal grain orientation of the metal.

A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor Manufacturing.

The Gate-All-Around Field-Effect Transistor (GAAFET) is proposed as a successor to Fin Field-Effect Transistor (FinFET) technology to increase channel length and improve the device performance. The GAAFET features a complex multilayer structure, which complicates the manufacturing process. One of the most critical steps in GAAFET fabrication is the selective lateral etching of the SiGe layers, essential for forming the inner-spacer. Industry commonly encounters a non-uniform etching profile during this step. In this paper, a continuous two-step dry etching model is proposed to investigate the mechanism behind the formation of the non-uniform profiles. The model consists of four modules: anisotropic etching simulation, Ge atom diffusion simulation, Si/SiGe etch selectivity calculation and SiGe selective etching simulation. By calibrating and verifying this model with experimental data, the edge rounding and gradient etching rates along the sidewall surface are successfully simulated. Based on further examination of the influence of chamber pressure on the profile using this model, the inner-spacer shape is improved experimentally by appropriately reducing the chamber pressure. This work aims to provide valuable insights for etching process recipes in advanced GAAFETs manufacturing.

Etch characteristics of maskless oxide/nitride/oxide/nitride (ONON) stacked structure using C4H2F6-based gas

Oxide/Nitride/Oxide/Nitride (ONON; SiO2/SiNx/SiO2/SiNx) stacked structure is widely used in the 3D vertical structure of semiconductor cells. Previously, to form a 3D cells, photoresist (PR) was patterned and repeatedly trimmed on the top of ONON after the etching of one ON layer. Due to the time-consuming process of etching layer-by-layer of ON layer, two-step etch processing using C4F8-based or C4F6-based gases composed of maskless ONON stack feature etching and followed one ON layer-by layer etching by PR trimming in the ONON stack feature are employed these days. However, the two-step etching method resulted in poor etch profiles of maskless ONON stack feature in addition to high global warming potential of C4F8 and C4F6. In this study, we investigated the etching of maskless ONON stack feature using C4H2F6-based gas having a low global warming potential and the effects of C4H2F6-based gas on the etch characteristics of maskless ONON stack feature such as etch rate, etch profile, change in critical dimensional (CD), and etch selectivity between SiO2 and SiNx have been investigated. C4H2F6-based gas showed the highest etch rates compared to C4F6 and C4F8-based gases in addition to the etch selectivity of ~ 1:1 between SiO2 and SiNx due to hydrogen included in the gas structure. In addition, the change in horizontal CD was lower in the order of C4H2F6, C4F6, and C4F8-based gases due to the more effective sidewall passivation in the order of C4F8, C4F6, and C4H2F6-based gases. The thicker carbon-based polymer layer on the sidewall also played an important role in maintaining the shape of the top edge shape of maskless ONON stack feature when etching a line feature in an environment without a mask.

Optical emission spectroscopy as a method for evaluating the change in Si etching structures profile in ICP SF6/C4F8 plasma: Microstructures

In this work, a method for in situ diagnostics of the etching profile of silicon structures (etching window sizes 15–400 μm) using optical emission spectroscopy was proposed. To determine the relationship between the etching profile and plasma parameters, the influence of technological parameters on the etching characteristics (vertical and lateral etching rate, selectivity in relation to photoresist, and sidewall angle) was studied. As a general parameter, which reflects the changes in plasma characteristics depending on the selected technological parameters, the parameter X (C/F ratio in SF6/C4F8 plasma) was introduced. Based on the results obtained, a general pattern between the lateral etching rate, sidewall angle, and optical emission spectra was identified. Thus, ranges of X values, at which the lateral etching rate does not exceed 5 nm/min for 15–30 μm structures and 15 nm/min for 100 μm structures, were estimated: 0.38 ≤ X ≤ 0.77 and 0.28 ≤ X ≤ 0.46, respectively. For 250–400 μm structures, ranges of X values, at which the sidewall angle is acute, straight, and obtuse, were determined: 0.16 ≤ X < 0.29, 0.29 ≤ X ≤ 0.41, 0.41 < X ≤ 0.75, respectively.

Etch characteristics of cobalt thin films using high density plasma of CH3COCH3/Ar gas mixture

Co thin films masked with SiO2/Si3N4 layers were etched using a high-density plasma of a CH3COCH3/Ar gas mixture. As the concentration of CH3COCH3 increased, the etch rate of the Co thin films and etch selectivity decreased. Optimal etch profiles of the Co films without redeposition were achieved owing to the formation of Co compounds and a passivation layer, which facilitated a high degree of anisotropy. Moreover, the etch characteristics of the Co films were examined using the ICP RF power, dc-bias voltage to the substrate, and process pressure. The active species in plasmas and Co compounds formed during etching were investigated using optical emission spectroscopy and X-ray photoelectron spectroscopy. Finally, the Co thin films patterned with 300 nm lines were etched using a CH3COCH3/Ar gas mixture under optimized etch conditions. The findings suggest that a CH3COCH3/Ar gas mixture can serve as an effective etch gas for fabricating dry-etched Co thin films.

Effect of Thickness and Sidewall Slope of Photoresist Mask on Etch Profile of Copper Interconnect

We performed high density plasma reactive ion etching of copper thin films using organic gas mixture to define fine patterns less than 10 μm for the application of display devices. However, since redeposition in dry etching of copper thin films frequently occurs due to extremely low reactivity, the etch variables which affect the formation of redeposition were investigated. In this study, the photoresist (PR) masks were employed to etch copper thin films. The effects of the thickness of PR and the sidewall slope of PR on etch profile and redeposition were examined.The thickness of PR mask were in the range of 3 μm ~ 1 μm and the sidewall slopes of the PR mask were in the range of 90° ~ 45°. The etch profile and etch mechanism of dry etching using different masks were evaluated using field emission scanning electron microscopy and X-ray photoelectron spectroscopy. Finally, an etching method to reduce and/or avoid the redeposition in dry etching of copper thin films will be proposed.Acknowledgement : This research was supported by the MOTIE(Ministry of Trade, Industry & Energy (20019504) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

Etch Characteristics of Cobalt Thin Films in High Density Plasma of Cl2/O2/Ar Gas Mixture

Inductively coupled plasma reaction ion etching (ICP-RIE) of cobalt thin films patterned with SiO2 hard masks was performed using Cl2/O2/Ar gas mixture. The etch characteristics of cobalt films in Cl2/Ar gas were examined to determine the roles of Cl2 and O2, respectively. The etch rates and etch profiles of cobalt films were investigated by varying the O2 concentration in Cl2/O2/Ar gas mixture.In the optimized Cl2/Ar gas mixture, systematic etching of cobalt films was performed by changing the etch parameters including ICP RF power, DC-bias voltage, and process pressure. As the DC-bias voltage and process pressure was increased, the etch rate increased and the etch profile improved. Through the etching parameters variation experiment, the etching properties were investigated by adding O2 to Cl2/Ar under optimized conditions. X-ray photoelectron spectroscopy and optical emission spectroscopy were used to investigate the etch mechanism in the Cl2/O2/Ar gas mixture. In addition, scanning probe microscope was used to observe roughness on the etched cobalt surface. Finally, the etching of cobalt films patterned with nanometer-scale in the optimized Cl2/O2/Ar gas mixture was successfully achieved with good etch profile.AcknowledgmentThis research was supported by the Ministry of Trade, Industry & Energy (MOTIE) (20019504) and Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. This work was supported by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (P0008458, HRD Program for Industrial Innovation).

Reactive ion etching of indium gallium zinc oxide (IGZO) and chamber cleaning using low global warming potential gas

Indium gallium zinc oxide (IGZO) is attracting increasing attention as a promising semiconducting material for use in next-generation semiconductors and display devices; for the application of IGZO to next-generation devices, it is necessary to have dry etch characteristics such as highly anisotropic etch profile, fast etch rate, and high mask selectivity. In the present study, IGZO was etched with various hydrofluorocarbon (HFC)-type gases (CxHyFz) in an inductively coupled plasma (ICP) etcher and, the etch characteristics and the possibility of removing the residue forming on the chamber wall by in-situ chamber cleaning was investigated. This study also investigated the use of low global warming potential (GWP) gas in IGZO etching, in response to the fact that HFC-type gases tend to show high GWP. The results showed that, when HFC-type gases were used in the etching of IGZO, the ratio of H/F in HFC affected the IGZO etch rate and etch selectivity. Among the HFC gases used in the experiment, such as CHxFy (x + y = 4) and C3HxFy (x + y = 8), IGZO was etched faster with the gas with higher H/F ratio, which was attributed to the easier removal of zinc in IGZO during the etching, along with the removal of In through the formation of more volatile In(CHx)y; this is attributed to the fact that, among IGZO components, zinc was the most difficult material to etch with the HFC gases. Among the HFC-type gases investigated, C3H6F2 (HFC-272ca), which is a low GWP (GWP100yr = 139) gas, showed the highest etch rate of ∼ 55 nm/min, the lowest dimensional loss (less than 7 nm for photoresist masked IGZO), and the most anisotropic etch profile with the lowest surface roughness. During the etching with HFC gases, compounds such as GaHx/Ga(CHx)y, COx, In(CHx)y, and Zn(CHxFy)z were expected to have been produced as byproducts, and these were removed through Ar+ ion sputtering from the IGZO surface, but some of the these compounds were accumulated on the chamber wall along with dissociated HFCs that were formed during the etching. However, it was possible to completely remove these etch byproducts that had been formed on the chamber wall by using a H2/Ar plasma.

Comparative study of CF4 + X + He (X = C4F8 or C4H2F6) plasmas for high aspect ratio etching of SiO2 with ACL mask

AbstractThis work compared C4F8 and C4H2F6 gases (as third components in CF4 + He gas mixture) for the high aspect ratio etching of SiO2 through the amorphous carbon layer (ACL) mask. The research scheme included the study of gas‐phase plasma characteristics, etching kinetics, and etching profiles. It was found that CF4 + C4F8 + He and CF4 + C4H2F6 + He gas mixtures are featured by quite close plasma parameters, the kinetics of electron‐impact processes, and ion bombardment intensities. At the same, the use of C4H2F6 provides a bit lower F atom density together with a bit higher polymerizing ability. All these factors cause lower absolute etching rates for both SiO2 and ACL but provide better SiO2/ACL/ACL selectivity and profile features.

Autonomous hybrid optimization of a SiO2 plasma etching mechanism

Computational modeling of plasma etching processes at the feature scale relevant to the fabrication of nanometer semiconductor devices is critically dependent on the reaction mechanism representing the physical processes occurring between plasma produced reactant fluxes and the surface, reaction probabilities, yields, rate coefficients, and threshold energies that characterize these processes. The increasing complexity of the structures being fabricated, new materials, and novel gas mixtures increase the complexity of the reaction mechanism used in feature scale models and increase the difficulty in developing the fundamental data required for the mechanism. This challenge is further exacerbated by the fact that acquiring these fundamental data through more complex computational models or experiments is often limited by cost, technical complexity, or inadequate models. In this paper, we discuss a method to automate the selection of fundamental data in a reduced reaction mechanism for feature scale plasma etching of SiO2 using a fluorocarbon gas mixture by matching predictions of etch profiles to experimental data using a gradient descent (GD)/Nelder–Mead (NM) method hybrid optimization scheme. These methods produce a reaction mechanism that replicates the experimental training data as well as experimental data using related but different etch processes.

Cryogenic DRIE processes for high-precision silicon etching in MEMS applications

Cryogenic deep reactive ion etching (Cryo DRIE) of silicon has become an enticing but challenging process utilized in front-end fabrication for the semiconductor industry. This method, compared to the Bosch process, yields vertical etch profiles with smoother sidewalls not subjected to scalloping, which are desired for many microelectromechanical systems (MEMS) applications. Smoother sidewalls enhance electrical contact by ensuring more conformal and uniform sidewall coverage, thereby increasing the effective contact area without altering contact dimensions. The versatility of the Cryo DRIE process allows for customization of the etch profiles by adjusting key process parameters such as table temperature, O2 percentage of the total gas flow rate (O2 + SF6), RF bias power and process pressure. In this work, we undertake a comprehensive study of the effects of Cryo DRIE process parameters on the trench profiles in the structures used to define cantilevers in MEMS devices. Experiments were performed with an Oxford PlasmaPro 100 Estrelas ICP-RIE system using positive photoresist SPR-955 as a mask material. Our findings demonstrate significant influences on the sidewall angle, etch rate and trench shape due to these parameter modifications. Varying the table temperature between −80 °C and −120 °C under a constant process pressure of 10 mTorr changes the etch rate from 3 to 4 μm min−1, while sidewall angle changes by ∼2°, from positive (<90° relative to the Si surface) to negative (>90° relative to the Si surface) tapering. Altering the O2 flow rate with constant SF6 flow results in a notable 10° shift in sidewall tapering. Furthermore, SPR-955 photoresist masks provide selectivity of 46:1 with respect to Si and facilitates the fabrication of MEMS devices with precise dimension control ranging from 1 to 100 μm for etching depths up to 42 μm using Cryo DRIE. Understanding the influence of each parameter is crucial for optimizing MEMS device fabrication.

Characteristics of clean SiO2 atomic layer etching based on C6F6 physisorption

SiO2 atomic layer etching (ALE) techniques are widely used to improve the etch issues related to nanoscale semiconductor device etching such as self-aligned contact (SAC) etching requiring high etch selectivity of SiO2/Si3N4. For more precise and cleaner SiO2 ALE, cryo-ALE methods using physisorption of fluorocarbon gas at a cryotemperature are also being investigated. In this study, to avoid the use of cryotemperature for clean SiO2 ALE, a high boiling point (HBP) gas such as C6F6, having 80 °C of boiling point (global warming potential: 7), has been used as the physisorption gas without using cryotemperatures. At a substrate temperature lower than −15 °C, due to the adequate physisorption of C6F6 on the SiO2 and Si3N4 surfaces, high SiO2 etch depth per cycle (EPC) and high etch selectivity of SiO2/Si3N4 could be achieved through the higher chemical reaction of the fluorocarbon layer with SiO2 than that of Si3N4. For the etching of Si3N4 line patterned SiO2, an O2 descumming step was added after every 50 cycles of ALE process to prevent fluorocarbon layer deposition on the sidewall of the Si3N4 mask. Finally, anisotropic SiO2 etch profiles with high etch selectivity of SiO2/Si3N4 could be obtained without contamination of chamber sidewalls.

Voltage- and Metal-assisted Chemical Etching of Micro and Nano Structures in Silicon: A Comprehensive Review.

Sculpting silicon at the micro and nano scales has been game-changing to mold bulk silicon properties and expand, in turn, applications of silicon beyond electronics, namely, in photonics, sensing, medicine, and mechanics, to cite a few. Voltage- and metal-assisted chemical etching (ECE and MaCE, respectively) of silicon in acidic electrolytes have emerged over other micro and nanostructuring technologies thanks to their unique etching features. ECE and MaCE have enabled the fabrication of novel structures and devices not achievable otherwise, complementing those feasible with the deep reactive ion etching (DRIE) technology, the gold standard in silicon machining. Here, a comprehensive review of ECE and MaCE for silicon micro and nanomachining is provided. The chemistry and physics ruling the dissolution of silicon are dissected and similarities and differences between ECE and MaCE are discussed showing thattheyare the two sides of the same coin. The processes governing the anisotropic etching of designed silicon micro and nanostructures are analyzed, and the modulation of etching profile over depthis discussed. The preparation of micro- and nanostructures with tailored optical, mechanical, and thermo(electrical) properties is then addressed, and their applications in photonics, (bio)sensing, (nano)medicine, and micromechanical systems are surveyed. Eventually, ECE and MaCE are benchmarked against DRIE, and future perspectives are highlighted.

Etch characteristics of cobalt thin films using high density plasma of halogen gas

Inductively coupled plasma (ICP) reaction ion etching of Co thin films patterned with SiO2 hard marks was performed using Cl2/Ar and Cl2/O2/Ar gas mixtures. The etch rate, etch selectivity, and etch profile of the cobalt thin films were investigated by varying the gas concentration in the Cl2/Ar and Cl2/O2/Ar gas mixtures. The etching parameters, including the ICP RF power, DC-bias voltage to the substrate, and process pressure, were varied to investigate the etch characteristics. The etch mechanisms in the Cl2/Ar and Cl2/O2/Ar gas mixtures were examined using X-ray photoelectron spectroscopy, scanning probe microscopy, and optical emission spectroscopy. Finally, the cobalt thin films with 300 nm line pattern were etched using a Cl2/O2/Ar gas mixture under the optimized etch conditions.

PbS quantum dot thin film dry etching

Many consumer products used daily contain sensors and image sensors (smartphones, cars, automated tools, etc.). There is a growing demand to enhance the capabilities of industrial products to probe their environment more efficiently, i.e., under difficult conditions (smoke, darkness, etc.). One solution is to extend the capabilities of image sensors to detect light toward the near-infrared and short-wave infrared (SWIR) regions. Because silicon has weak absorption properties in the infrared, especially in the SWIR region, manufacturers are investigating the use of new materials to build these sensors. To this end, colloidal quantum dot (QD) thin films made from the assembly of PbS nanoparticles have emerged as promising materials. They offer tunable bandgaps, favorable absorption properties, and scalability in production. However, patterning the active parts of photodiodes by plasma etching of this new material presents challenges. The etching chemistry must be selected to volatilize Pb and S without modifying the unetched active part of the PbS QD photodiode, and the etching profile should be anisotropic. In this study, we have screened several plasma operating conditions (power, pressure, and temperature) in various chemistries (H2, Cl2, HBr, and N2). To understand the etch mechanisms and profiles, ToF-SIMS and TEM/energy dispersive x-ray were employed. Our findings reveal that halogen-based plasmas cause QD material deterioration through Cl or Br diffusion deep in the film. While H2 plasmas are efficient to etch PbS QD films, they result in high roughness due to the removal of the carbonated ligands that separate PbS QDs. This ligand etching is followed by QD coalescence leading to significant roughness. However, the addition of N2 to H2 can prevent this phenomenon by forming a diffusion barrier at the surface, resulting in favorable etching characteristics.

Control of selective SiGe etching by enhanced formation of hydroxyl radicals and by surface passivation in peracetic acid solution

The selective etching of SiGe over Si is a crucial process in the fabrication of advanced 3D semiconductor devices. During the etching process, highly selective SiGe etching is required to obtain precise etch profiles. In this study, the enhancement of the selective SiGe etching in a peracetic acid (PAA) etchant solution by adding hydroxylamine and pentyl acetate was investigated. The addition of hydroxylamine increased the SiGe etching rate and SiGe/Si etching selectivity owing to the more vigorous oxidation of the SiGe surface produced by hydroxyl radicals. The SiGe/Si etching selectivity was also increased through the addition of pentyl acetate owing to the larger decrease in the Si etching rate when compared to that in SiGe. This is due to the stronger passivation effect of pentyl acetate on the Si surface, which suppresses its oxidation more effectively than on the SiGe surface. The SiGe etching rate and SiGe/Si etching selectivity were significantly increased from 223.3 nm/min and 125 to 310.8 nm/min and 557, respectively, through the simultaneous addition of hydroxylamine and pentyl acetate to the PAA etchant solution. Consequently, a mechanism for the selective etching of SiGe on vertically stacked SiGe/Si trench structures using the PAA etchant solution was proposed.

Transient-assisted plasma etching (TAPE): Concept, mechanism, and prospects

Atomic layer etching (ALE) schemes are often deemed economically unviable due to their slow pace and are not suited for every material/hard-mask combination. Conversely, plasma etching presents pattern profile challenges because of its inability to independently control ion and neutral flux. In this work, we introduce a new cyclic transient-based process, called transient-assisted plasma etching (TAPE). A cycle of TAPE is a short exposure step to a sustained flow of reactant before the reactant gas injection is stopped in the second step, resulting in a plasma transient. As the plasma ignites and a substantial amount of etchant remains, a chemically driven etching process occurs, akin to conventional etching. Later in the transient, the modified surface is exposed to a reduced etchant quantity and a sustained ion bombardment, in a similar way to ALE. The cointegration of conventional etching and atomic layer etching allows interesting compromises between etch control and processing time. Going for a transient plasma allows to provide the time and conditions needed for the necessary plasma-surface interactions to occur in one step. In this perspective, the mechanisms behind etch rate, profile correction, and conservation of surface composition using amorphous carbon, as a benchmark, are discussed.

Plasma-based etching approach for GEM detector microfabrication at FBK for X-ray polarimetry in space

Gas Electron Multiplier (GEM) detectors are crucial for enabling high-resolution X-ray polarization of astrophysical sources when coupled to custom pixel readout ASIC in Gas Pixel Detectors (GPD), as in the Imaging X-ray Polarimetry Explorer (IXPE), the Polarlight cubesat pathfinder and the PFA telescope onboard the future large enhanced X-ray Timing and Polarimetry (eXTP) Chinese mission. The R&D efforts of the IXPE collaboration have resulted in mature GPD technology. However, limitations in the classical wet-etch or laser-drilled fabrication process of GEMs motivated our exploration of alternative methods. This work focuses on investigating a plasma-based etching approach for fabricating GEM patterns at Fondazione Bruno Kessler (FBK). The objective is to improve the aspect ratio of the GEM holes, to mitigate the charging of the GEM dielectric which generates rate-dependent gain changes. Unlike the traditional wet-etch process, Reactive Ion Etching (RIE) enables more vertical etching profiles and thus better aspect ratios. Moreover, the RIE process promises to overcome non-uniformities in the GEM hole patterns which are believed to cause systemic effects in the azimuthal response of GPDs equipped with either laser-drilled or wet-etch GEMs. We present a GEM geometry with 20 μm in diameter and 50 μm pitch, accompanied by extensive characterization (SEM and PFIB) of the structural features and aspect ratios. The collaboration with INFN Pisa and Turin enabled us to compare the electrical properties of these detectors and test their performance in their use as electron multipliers in GPDs. Although this R&D work is in its initial stages, it holds promise for enhancing the sensitivity of the IXPE mission in X-ray polarimetry measurements through GEM pattern with more vertical hole profiles. The outcomes of this study have the potential to advance the current technological platforms and improve the capabilities of future space-based X-ray polarimetry missions.

Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral beam etching (NBE) processes was studied in this work. In μLEDs of this size, the influence of defects formation in the sidewalls on EQE was evaluated. There was almost no difference in EQE between μLEDs array etched by the NBE process no matter 40 μm ✕40 μm and 80 μm ✕80 μm, but the dependence was observed in the ICPRIE. Even with this size, it was found that the size effect of EQE is smaller than that in case of using ICPRIE for defect-free neutral beam etching. This impact is substantial since μLED predominantly operated at low current density, around 1–5 A/cm2. Consequently, the reduction of defect density, encompassing both internal and sidewall defects, becomes imperative even in 40–80 μm InGaN-based μLEDs. This not only improves the overall efficiency of μLEDs but also fortifies the brightness stability of μLED displays if process etching by NBE. It was also found that the etching shape had an influence on EQE. It could be attributed to fact that the etching profile angle of NBE was more vertical than that of ICPRIE. Because the different angles of the mesa resulted in different light intensity. The μLEDs emitting with a wavelength of 450 nm, the light extraction efficiency and intensity at a mesa angle 58° of NBE etching μLEDs was about 8% lower than those of an angle (38°) of ICPRIE etching μLEDs by simulation.

Plasma sheath tailoring by a magnetic field for three-dimensional plasma etching

Three-dimensional (3D) etching of materials by plasmas is an ultimate challenge in microstructuring applications. A method is proposed to reach a controllable 3D structure by using masks in front of the surface in a plasma etch reactor in combination with local magnetic fields to steer the incident ions in the plasma sheath region toward the surface to reach 3D directionality during etching and deposition. This effect has the potential to be controlled by modifying the magnetic field and/or plasma properties to adjust the relationship between sheath thickness and mask feature size. However, because the guiding length scale is the plasma sheath thickness, which for typical plasma densities is at least tens of micrometers or larger, controlled directional etching and deposition target the field of microstructuring, e.g., of solids for sensors, optics, or microfluidics. In this proof-of-concept study, it is shown that E→×B→ drifts tailor the local sheath expansion, thereby controlling the plasma density distribution and the transport when the plasma penetrates the mask during an RF cycle. This modified local plasma creates a 3D etch profile. This is shown experimentally as well as using 2d3v particle-in-cell/Monte Carlo collisions simulation.