GaSb and Ga1-xAlxSb crystals were prepared with the vertical Bridgman (VB) method. The effects of aluminum atoms (Al) doping on the structure and photoelectric properties of GaSb crystal were investigated. The results show that the GaAlSb crystal maintains the zinc blende crystal structure of the GaSb crystal, and the crystal quality gradually improves with the increase of Al doping concentration, and the effective segregation coefficient keff of Al decreases from 3.69 to 2.83. Furthermore, Al doping significantly inhibits the formation of dislocations, of which density decreases from 3.634 × 103 cm−2 to 1.256 × 103 cm−2. As an element with the same equivalent electrons as Ga, Al doping makes GaSb crystal become into an n-type semiconductor with the free electrons as the main carriers, from a p-type semiconductor with the holes as the main carriers (8.867 × 1017 cm−3). And the carrier concentration, i.e., the free electrons concentration, increases with the doped Al concentration increase, up to the maximum of 1.929 × 1018 cm−3. And the mobility of electron carriers increases with the increase of Al concentration, up to 2.140 × 103 cm2/(V•s), far greater than that of the hole carriers 1.358 × 103 cm2/(V•s). And the resistivity decreases from 7.649 × 10−3 Ω•cm to 1.416 × 10−3 Ω•cm. Moreover, the infrared transmittance spectrum also shows a significant improvement of the crystal quality.
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