Source Of Entangled Photons Research Articles

Simple but efficient polarization-entangled photon sources

We report on the design and characterization of polarization-entangled photon sources at NIR and telecom wavelengths, based on spontaneous parametric downconversion in a linear interferometric arrangement with beam displacers. The sources demonstrate state-of-the-art performance with respect to detected brightness, heralding efficiency, and entanglement visibility. Featuring a stable and compact profile with simple alignment, they hold great promise for future development of field- and space-ready prototypes, alongside serving as a practical guide for researchers interested in designing efficient entangled photon sources.

Modal phase-matching in thin-film lithium niobate waveguides for efficient generation of entangled photon pairs

Thin-film lithium niobate (TFLN) waveguides have emerged as a pivotal platform for on-chip spontaneous parametric down-conversion (SPDC), serving as a crucible for the generation of entangled photon pairs. The periodic poling of TFLN, while capable of generating high-efficiency SPDC, demands intricate fabrication processes that can be onerous in terms of scalability and manufacturability. In this work, we introduce a novel approach to the generation of entangled photon pairs via SPDC within TFLN waveguides, harnessing the principles of modal phase-matching (MPM). To address the challenge of efficiently exciting pump light typically in a higher-order mode, we have engineered a mode converter that couples two asymmetrically dimensioned waveguides. This converter adeptly transforms the fundamental mode into a higher-order mode, demonstrating a conversion loss of 1.55 dB at 785 nm with a 3 dB bandwidth exceeding 30 nm. Subsequently, we have showcased the device’s capabilities by characterizing the pair generation rate (PGR), coincidences-to-accidentals ratio (CAR), and spectral profile of the entangled photon source. Our findings present a simplified and versatile method for the on-chip generation of entangled photon sources, which may pave the way for the application in the realms of quantum information processing and communication technologies.

InGaP χ(2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation

Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium gallium phosphide (InGaP) integrated photonics platform for broadband, ultra-efficient second-order nonlinear optics. The InGaP nanophotonic waveguide enables second-harmonic generation with a normalized efficiency of 128, 000%/W/cm2 at 1.55 μm pump wavelength, nearly two orders of magnitude higher than the state of the art in the telecommunication C band. Further, we realize an ultra-bright, broadband time-energy entangled photon source with a pair generation rate of 97 GHz/mW and a bandwidth of 115 nm centered at the telecommunication C band. The InGaP entangled photon source shows high coincidence-to-accidental counts ratio CAR > 104 and two-photon interference visibility > 98%. The InGaP second-order nonlinear photonics platform will have wide-ranging implications for non-classical light generation, optical signal processing, and quantum networking.

Observation of Three-Photon Cascaded Emission from Triexcitons in Giant CsPbBr3 Quantum Dots at Room Temperature.

Colloidal semiconductor nanocrystals have long been considered a promising source of time-correlated and entangled photons via the cascaded emission of multiexcitonic states. The spectroscopy of such cascaded emission, however, is hindered by efficient nonradiative Auger-Meitner decay, rendering multiexcitonic states nonemissive. Here we present room-temperature heralded spectroscopy of three-photon cascades from triexcitons in giant CsPbBr3 nanocrystals. We show that this system exhibits second- and third-order correlation function values, g(2)(0) and g(3)(0,0), close to unity, identifying very weak binding of both biexcitons and triexcitons. Combining fluorescence lifetime analysis, photon statistics, and spectroscopy, we can readily identify emission from higher multiexcitonic states. We use this to verify emission from a single emitter despite high emission quantum yields of multiply excited states and comparable emission lifetimes of singly and multiply excited states. Finally, we present potential pathways toward control of the photon number statistics of multiexcitonic emission cascades.

Entanglement distribution through separable states via a zero-added-loss photon multiplexing inspired protocol

The recently proposed zero-added-loss multiplexing (ZALM) source of entangled photons enables higher efficiency in entanglement distribution than spontaneous parametric down-conversion sources and can be carried out using both space-to-ground and ground-to-ground links. We demonstrate the flexibility of ZALM architectures to be adapted to alternative entanglement distribution protocols. Focusing on the counterintuitive result that entanglement can be generated between distant parties without using any entanglement as a resource, we analyze two protocols for entanglement distribution to memories via separable states. Modeling them in a ZALM setup, we consider the effects of noise both in the communication channels and in the memories. We thereby identify the optimal protocol to use with respect to the highest entanglement generated, given the noise conditions of the network. Published by the American Physical Society 2024

Polarization-entangled photon-pair source with van der Waals 3R-WS2 crystal

Ultracompact entangled photon sources are pivotal to miniaturized quantum photonic devices. Van der Waals (vdW) nonlinear crystals promise efficient photon-pair generation and on-chip monolithic integration with nanophotonic circuitry. However, it remains challenging to generate maximally entangled Bell states of photon pairs with high purity, generation rate, and fidelity required for practical applications. Here, we realize a polarization-entangled photon-pair source based on spontaneous parametric down conversion in an ultrathin rhombohedral tungsten disulfide (3R-WS2) crystal. This vdW entangled photonic source exhibits a high photon-pair purity with a coincidence-to-accidental ratio of above 800, a generation rate of 31 Hz, and two maximally polarization-entangled Bell states with fidelities exceeding 0.93 and entanglement degree over 0.97. These results stem from scalable optical nonlinearity, enhanced second-order susceptibility by electronic transitions, and a well-defined symmetry-enabled selection rule inherent in 3R-WS2. Our polarization entangled photon source can be integrated with photonic structures for generating more complex entangled states, thus paving an avenue for advanced quantum photonic systems toward computation and metrology.

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots.

Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.

Wavelength-tunable high-fidelity entangled photon sources enabled by dual Stark effects

The construction of a large-scale quantum internet requires quantum repeaters containing multiple entangled photon sources with identical wavelengths. Semiconductor quantum dots can generate entangled photon pairs deterministically with high fidelity. However, realizing wavelength-matched quantum-dot entangled photon sources faces two difficulties: the non-uniformity of emission wavelength and exciton fine-structure splitting induced fidelity reduction. Typically, these two factors are not independently tunable, making it challenging to achieve simultaneous improvement. In this work, we demonstrate wavelength-tunable entangled photon sources based on droplet-etched GaAs quantum dots through the combined use of AC and quantum-confined Stark effects. The emission wavelength can be tuned by ~1 meV while preserving an entanglement fidelity f exceeding 0.955(1) in the entire tuning range. Based on this hybrid tuning scheme, we finally demonstrate multiple wavelength-matched entangled photon sources with f > 0.919(3), paving the way towards robust and scalable on-demand entangled photon sources for quantum internet and integrated quantum optical circuits.

High-quality on-chip entangled photon source with broad tunable range based on coupling compensation

This paper introduces a tunable and high-quality photon source that utilizes evanescent-wave coupling phase matching. By adjusting the coupling gap, the signal light can be tuned from 1307 nm to 1493.9 nm, and the idler light can be tuned from 1612.8 nm to 1907 nm. Throughout the entire tuning range, the purity of the photon pairs remains above 92%. In specific tuning ranges (signal photons from 1307 nm to 1421.7 nm and idler photons from 1706.4 nm to 1907 nm), the purity exceeds 99% and the full width at half-maximum of the generated photon spectra is less than 1.85 nm. The photon source is designed using a silicon–organic hybrid waveguide, which effectively minimizes the impact of two-photon absorption and achieves a 15 dB enhancement in four-wave mixing conversion efficiency compared to a strip waveguide. This design may promote efficient and precise generation of high-quality photons at desired frequencies, offering promising potential for various applications in quantum technologies.

Entangled photon pair generation in an integrated SiC platform

Entanglement plays a vital role in quantum information processing. Owing to its unique material properties, silicon carbide recently emerged as a promising candidate for the scalable implementation of advanced quantum information processing capabilities. To date, however, only entanglement of nuclear spins has been reported in silicon carbide, while an entangled photon source, whether it is based on bulk or chip-scale technologies, has remained elusive. Here, we report the demonstration of an entangled photon source in an integrated silicon carbide platform for the first time. Specifically, strongly correlated photon pairs are efficiently generated at the telecom C-band wavelength through implementing spontaneous four-wave mixing in a compact microring resonator in the 4H-silicon-carbide-on-insulator platform. The maximum coincidence-to-accidental ratio exceeds 600 at a pump power of 0.17 mW, corresponding to a pair generation rate of (9 ± 1) × 103 pairs/s. Energy-time entanglement is created and verified for such signal-idler photon pairs, with the two-photon interference fringes exhibiting a visibility larger than 99%. The heralded single-photon properties are also measured, with the heralded g(2)(0) on the order of 10−3, demonstrating the SiC platform as a prospective fully integrated, complementary metal-oxide-semiconductor compatible single-photon source for quantum applications.

Error correction based artificial neural network in multi-modes CV-QKD with simultaneous type-I and type-II parametric-down conversion entangled photon source

We model simultaneous type-I and type-II phase matching in a single non-linear crystal (NLC), based on a double periodically poled lithium niobate crystal. We also discuss entanglement based continuous variable quantum key distribution (CV-QKD), and the security of such scheme is analyzed considering an eavesdropper being capable of individual attacks. We further demonstrate efficiency of the artificial neural network (ANN) algorithm during post-processing or errors correction in such CV-QKD protocols. Results show that employing simultaneous type-I and type-II SPDC process in single NLC is a potential source to generate high dimensional (or hyper-entangled) states, strongly required for quantum information processing tasks, an example of CV-QKD. Security analysis of such a CV-QKD protocol shows a strong advantage of employing the above entangled photon state source, given that it provides a higher secure key rate and thus a secure communication within a larger distance. In addition, the suggested error correction algorithm is less time consuming and highly efficient, since full synchronization is achieved just after a few number of updates of trusted parties’ tree-parity-machines. Our results sufficiently demonstrate that the suggested CV-QKD is able to distribute secure keys in nearby inter-city areas, and therefore allows lower-cost secure communication networks.

Progress on Chip-Based Spontaneous Four-Wave Mixing Quantum Light Sources

Quantum light generated through spontaneous four-wave mixing (SFWM) process in nonlinear materials, such as entangled photon pairs and single photons, is an important resource for various emerging quantum applications. Integrated quantum photonics has enabled the generation, manipulation, and detection of quantum states of light with steadily increasing scale and complexity levels. Importantly, the exploration of on-chip integration has accumulated substantial progresses in recent years toward the realization of low-cost, large-scale quantum photonic circuits. Here, we review the underlying mechanism and discuss state-of-the-art SFWM on-chip quantum light sources fabricated with various structures and materials on chip. Furthermore, we enumerate the most appealing applications of on-chip SFWM such as heralding single-photon source, entangled photon source, and system-level integration.

Josephson Traveling Wave Parametric Amplifier as Quantum Source of Entangled Photons for Microwave Quantum Radar Applications

Josephson Traveling Wave Parametric Amplifier as Quantum Source of Entangled Photons for Microwave Quantum Radar Applications

High efficiency grating couplers for strain tunable GaAs quantum dot based entangled photon sources

The on-chip integration of single photon and entangled photon emitters such as epitaxially grown semiconductor quantum dots into photonic frameworks is a rapidly evolving research field. GaAs quantum dots offer high purity and a high degree of entanglement due to, in part, exhibiting very small fine structure splitting along with short radiative lifetimes. Integrating strain-tunable quantum dots into nanostructures enhances the quantum optical fingerprint, i.e., radiative lifetimes and coupling of these sources, and allows for on-chip manipulation and routing of the generated quantum states of light. Efficient out-coupling of photons for off-chip processing and detection requires carefully engineered mesoscopic structures. Here, we present numerical studies of highly efficient grating couplers reaching up to over 90% transmission. A 2D Gaussian mode overlap of 83.39% for enhanced out-coupling of light from within strain-tunable photonic nanostructures for free-space transmission and single-mode fiber coupling is shown. The photon wavelength under consideration is 780 nm, corresponding to the emission from GaAs quantum dots resembling the 87Rb D2 line. The presented numerical study helps implement such sources for applications in complex quantum optical networks.

Demonstration of 75 km-fiber quantum clock synchronization in quantum entanglement distribution network

The quantum entanglement distribution network, serviced as the communication infrastructure which distributes quantum information among remote users, enables many applications beyond the reach of classical networks. Recently, the applications such as quantum key distribution and quantum secure direct communication, have been successfully demonstrated in the quantum entanglement distribution network. In this article, we propose a multi-user round-trip quantum clock synchronization (QCS) scheme in the quantum network, which can be implemented with one single entangled photon source located at the server. The server distributes the entangled photons to remote multiple users with the wavelength division multiplexing strategy, and each user feeds partial received photons back to the server. The clock difference between the server and each user is calculated from the one-way and round-trip propagation times, which are determined according to the time correlation of entangled photons. Afterwards, the demonstration has been conducted between the server and a user over a 75-km-long fiber link, where the measured clock difference uncertainty is 4.45 ps, and the time deviation is 426 fs with an average time of 4000 s. Furthermore, the proposed QCS scheme is linearly scalable to many users, with respect to user hardware and number of deployed fibers.

Highly-enhanced active beam-wander-correction for free-space quantum communications.

In practical applications to free-space quantum communications, the utilization of active beam coupling and stabilization techniques offers notable advantages, particularly when dealing with limited detecting areas or coupling into single-mode fibers(SMFs) to mitigate background noise. In this work, we introduce highly-enhanced active beam-wander-correction technique, specifically tailored to efficiently couple and stabilize beams into SMFs, particularly in scenarios where initial optical alignment with the SMF is misaligned. To achieve this objective, we implement a SMF auto-coupling algorithm and a decoupled stabilization method, effectively and reliably correcting beam wander caused by atmospheric turbulence effects. The performance of the proposed technique is thoroughly validated through quantitative measurements of the temporal variation in coupling efficiency(coincidence counts) of a laser beam(entangled photons). The results show significant improvements in both mean values and standard deviations of the coupling efficiency, even in the presence of 2.6 km atmospheric turbulence effects. When utilizing a laser source, the coupling efficiency demonstrates a remarkable mean value increase of over 50 %, accompanied by a substantial 4.4-fold improvement in the standard deviation. For the entangled photon source, a fine mean value increase of 14 % and an approximate 2-fold improvement in the standard deviation are observed. Furthermore,the proposed technique successfully restores the fidelity of the polarization-entangled state, which has been compromised by atmospheric effects in the free-space channel, to a level close to the fidelity measured directly from the source. Our work will be helpful in designing spatial light-fiber coupling system not only for free-space quantum communications but also for high-speed laser communications.

AI polarization compensation algorithm using a asymmetry entangled photon source

Satellite-based entanglement distribution is essential for global-scale practical quantum network and foundational tests of quantum physics. Owing to relative motion of the satellite and the ground station, however, using high intensity reference laser to compensate polarization rotation is necessary. Here we propose an artificial intelligence (AI) algorithm to compensate polarization using entangled photon pairs instead of high intensity reference laser. Our AI polarization compensation algorithm opens a new avenue to quantum communications and fundamental quantum optics experiments.

Microwave Photon Emission in Superconducting Circuits

Quantum computing requires a novel approach to store data as quantum states, opposite to classical bits. One of the most promising candidates is entangled photons. In this manuscript, we show the photon emission in the range of microwave frequencies of three different types of superconducting circuits, a SQUID, a JPA, and a JTWPA, often used as low-noise parametric amplifiers. These devices can be operated as sources of entangled photons. We report the experimental protocol used to produce and measure microwave radiation from these circuits, as well as data simulations. The collected spectra are obtained by performing single-tone measurements with a direct rf pump on the devices; the output spectra at low powers (below −100 dBm) are well interpreted by the dynamical Casimir model, while at high powers (above −100 dBm) the system is well described by the Autler–Townes fluorescence of a three-level atom.

Quantum superresolution for imaging two pointlike entangled photon sources

Quantum superresolution for imaging two pointlike entangled photon sources

Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A

Quantum dot (QD) growth on high () symmetry GaAs{111} surfaces holds promise for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs{111} surfaces suffers from surface roughness/defects and InAs deposition does not natively support Stranski–Krastanov QD growth. Surfactants have been identified as effective tools to alter the epitaxial growth process of III-V materials, however, their use remains unexplored on GaAs{111}. Here, we investigate Bi as a surfactant in III-As molecular beam epitaxy on GaAs(111)A substrates, demonstrating that Bi can eliminate surface defects/hillocks in GaAs and (Al,Ga)As layers, yielding atomically-smooth hillock-free surfaces with RMS roughness values as low as 0.13 nm. Increasing Bi fluxes are found to result in smoother surfaces and Bi is observed to increase adatom diffusion. The Bi surfactant is also shown to trigger a morphological transition in InAs/GaAs(111)A films, directing the 2D InAs layer to rearrange into 3D nanostructures, which are promising candidates for high-symmetry QDs. The desorption activation energy () of Bi on GaAs(111)A was measured by reflection high energy electron diffraction, yielding = 1.7 ± 0.4 eV. These results illustrate the potential of Bi surfactants on GaAs(111)A and will help pave the way for GaAs(111)A as a platform for technological applications including quantum photonics.