Enhanced Power Conversion Efficiency Research Articles

Enhancing power conversion efficiency in five-level multilevel inverters using reduced switch topology

This paper presents extensive research on improving the power conversion efficiency of five-level multilevel inverters (MLIs) by utilizing a reduced switch topology. MLIs have received an abundance of focus because of their ability to generate high-quality output waveforms and have better harmonic outcomes than traditional two-level inverters. The high number of switches in MLIs, on the other hand, can result in increased power losses and lower overall efficiency. In this paper, a novel reduced switch topology for five-level MLIs, which is having five switches is proposed with the aim of minimizing power losses while preserving superior performance due to lesser number of switches. To achieve efficient power conversion, the proposed topology employs advanced pulse width modulation control strategies and optimized switching patterns. The simulation results show that the minimized switch topology improves the power conversion efficiency of the five-level MLI, resulting in lower losses and better overall system performance. The total harmonic distortion (THD) value of the output current has been reduced to 7.12% and the efficiency has been achieved to 96.92%. The findings of this investigation help to advance MLI technology, allowing for more efficient and reliable power conversion in a variety of applications such as renewable energy systems, electric vehicles, and industrial drives.

Fabrication and Enhanced Performance Evaluation of TiO2@Zn/Al-LDH for DSSC Application: The Influence of Post-Processing Temperature

A sequence of dye-sensitized solar cells is proposed, utilizing TiO2@Zn/Al-layered double hydroxide (LDH) as their starting materials, in which Ruthenizer N719 was used as a photon absorber. The anticipated system was turned into sheet-like TiO2@mixed metal oxide (MMO) via post-processing treatment. The crystal quality indicated a relation to power conversion efficiency (PCE); this was combined with a comparable morphology profile. In detail, the optimum DSSC device exhibited average sheet-like thickness and a dye loading amount of 43.11 nm and 4.28 ×10−3 mM/cm−2, respectively. Concurrently, a considerable PCE enhancement of the optimum DSSC device (TiO2@MMO-550°) was attained compared to pristine MMO (0.91%), which could be due to boosted electron transfer efficiency. Of the fabricated devices, DSSC fabricated at 550° exhibited the highest PCE (1.91%), with a 35.6% enhancement compared to that obtained at 450°, as a result of its increased open-circuit voltage (3.29 mA/cm2) and short-circuit current (0.81 V). The proposed work delivers an enhanced efficiency as compared to similar geometries.

Four‐Terminal Perovskite–CdSeTe Tandem Solar Cells: From 25% toward 30% Power Conversion Efficiency and Beyond

Thin‐film tandem photovoltaic (PV) technology has emerged as a promising avenue to enhance power conversion efficiency beyond the radiative efficiency limit of single‐junction devices. Combining a tunable wide‐bandgap perovskite cell with a commercially established narrow‐bandgap cadmium selenium telluride (CdSeTe) cell in a comparatively easy‐to‐fabricate four‐terminal (4‐T) arrangement is a great step in that direction. Herein, the impact of the transparent back contact and the perovskite absorber bandgap on the performance of 4‐T perovskite–CdSeTe tandem solar cells is investigated. 4‐T perovskite–CdSeTe tandem device architecture with ≈25% efficiency is demonstrated and a feasible pathway is shown to improve the tandem efficiency to more than 30%. The results show that the integration of CdSeTe with perovskite in 4‐T tandem PV configurations represents a significant advancement toward achieving higher efficiency and low‐cost tandem PVs.

Solution‐Processed Sb2(S,Se)3 Seed‐Assisted Sb2Se3 Thin Film Growth for High Efficiency Solar Cell

Antimony selenide (Sb2Se3) emerges as a promising sunlight absorber in thin film photovoltaic applications due to its excellent light absorption properties and carrier transport behavior, attributed to the quasi‐one‐dimensional Sb4Se6‐nanoribbon crystal structure. Overcoming the challenge of aligning Sb2Se3‐nanoribbons normal to substrates for efficient photogenerated carrier extraction, a solution‐processed nanocrystalline Sb2(S,Se)3‐seeds are employed on the CdS buffer layer. These seeds facilitate superstrated Sb2Se3 thin film solar cell growth through a close‐space sublimation approach. The Sb2(S,Se)3‐seeds guided the Sb2Se3 absorber growth along a [002]‐preferred crystal orientation, ensuring a smoother interface with the CdS window layer. Remarkably, Sb2(S,Se)3‐seeds improve carrier transport, reduce series resistance, and increase charge recombination resistance, resulting in an enhanced power conversion efficiency of 7.52%. This cost‐effective solution‐processed seeds planting approach holds promise for advancing chalcogenide‐based thin film solar cells in large‐scale manufacturing.

Structure Optimization and Passivation Strategy Toward Efficient Integrated Perovskite/Pseudo‐Planar Heterojunction Solar Cells

AbstractBroadening near‐infrared (NIR) spectral response by virtue of organic bulk heterojunction (BHJ) is intensively explored to enhance power conversion efficiency (PCE) of perovskite solar cells (PSCs). However, the complex photovoltaic morphology and undesirable conductivity in BHJ structure can lead to the severe loss of photovoltaic performance, which are still urgent challenges for the commercialization of integrated PSCs (IPSCs). Recently, the gradual development of pseudo‐planar heterojunction (PPHJ) structure with excellent vertical phase separation and improved charge transfer can hopefully provide more opportunities for IPSCs. Herein, an optimization strategy is reported employing PPHJ structure with hydrophobic long alkyl chains as the NIR light‐absorbing layer in the devices, with which the light response of the IPSCs is extended to 920 nm. Owing to the lone electron pairs in the sulfur atoms, D18‐Cl has functioned as an effective additive that can effectively modulate the growth of the perovskite and passivate the defects. As a result, the optimized device has achieved an impressive PCE of 23.25%, while the short‐circuit current is enhanced from 22.93 to 25.14 mA cm−2. The long‐term and humidity stability of integrated perovskite/PPHJ solar cells are significantly elevated compared with IPSCs based on BHJ.

Polyvinyl Chloride-Based Luminescent Downshifting Film with High Flame Retardancy and Excellent UV Resistance for Silicon Solar Cells.

Solar power generation, as a clean energy source, has significant potential for development. This work reports the recent efforts to address the challenge of low power conversion efficiency in photovoltaic devices by proposing the fabrication of a luminescence downshifting layer using polyvinyl chloride (PVC) with added fluorescent dots to enhance light utilization. A photoluminescent microsphere (HCPAM) is synthesized by cross-linking hexachlorocyclotriphosphazene, 2-iminobenzimidazoline, and polyethyleneimine. Low addition of HCPAM can improve the fire safety of PVC films, raising the limiting oxygen index of PVC to 32.4% and reducing the total heat release and smoke production rate values by 14.5% and 42.9%, respectively. Additionally, modified PVC film remains a transparency of 88% and shows down-conversion light properties. When the PVC+1%HCPAM film is applied to the solar cell, the short-circuit current density increases from 42.3 to 43.8mAcm-2, resulting in a 7.0% enhancement in power conversion efficiency. HCPAM also effectively delays the photooxidative aging of PVC, particularly at a 3% content, maintaining the surface morphology and optical properties of PVC samples during ultraviolet aging. This study offers an innovative strategy to enhance the fire and UV-resistant performance of PVC films and expand their applications in protecting and efficiently utilizing photovoltaic devices.

Design tungsten oxides hole transport layers (HTLs) to modify the back interface in all-inorganic carbon-based CsPbBr3 solar cells

To enhance the inferior photovoltaic performance of all-inorganic carbon-based perovskite solar cells (C-PSCs) caused by inefficient charge extraction and transport processes of the CsPbBr3/carbon back interface, three types of tungsten oxides (WO3, WO2.72, WO2) are synthesized as low cost and stable hole transport layers (HTLs) to modify the back interface by tunning the energy level alignment. Among the three kinds of tungsten oxides, WO3 shows the best hole extraction and transport capability and the C-PSCs using WO3 HTL generates a power conversion efficiency (PCE) of 7.90% with a high open circuit voltage (Voc) of 1.307 V, indicating a great PCE enhancement of 43.9%, as compared with the device without HTL (5.49%). Meanwhile, WO2.72 and WO2 also are also proved to be qualified HTLs and the devices show PCE values of 7.57% and 6.24%, respectively. Importantly, WO3 and WO2.72 based device show excellent stabilities with PCE retention over 90% of the initial PCE values under ambient conditions for 60 days.

Interface Reactive Sputtering of Transparent Electrode for High-Performance Monolithic and Stacked Perovskite Tandem Solar Cells.

Sputtered indium tin oxide (ITO) fulfills the requirements of top transparent electrodes (TTEs) in semitransparent perovskite solar cells (PSCs) and stacked tandem solar cells (TSCs), as well as of the recombination layers in monolithic TSCs. However, the high-energy ITO particles will cause damage to the devices. Herein, the interface reactive sputtering strategy is proposed to construct cost-effective TTEs with high transmittance and excellent carrier transporting ability. Polyethylenimine (PEI) is chosen as the interface reactant that can react with sputtered ITO nanoparticles,so that, coordination compounds can be formed during the deposition process, facilitating the carrier transport at the interface of C60/PEI/ITO. Besides, the impact force of energetic ITO particles is greatly alleviated, and the intactness of the underlying C60 layer and perovskite layer is guaranteed. Thus, the prepared semitransparent subcells achieve a significantly enhanced power conversion efficiency (PCE) of 19.17%, surpassing those based on C60/ITO (11.64%). Moreover, the PEI-based devices demonstrate excellent storage stability, which maintains 98% of their original PCEs after 2000 h. On the strength of the interface reactive sputtering ITO electrode, a stacked all-perovskite TSC with a PCE of 26.89% and a monolithic perovskite-organic TSC with a PCE of 24.33% are successfully fabricated.

Vacuum-Processed Propylene Urea Additive: A Novel Approach for Controlling the Growth of CH3NH3PbI3 Crystals in All Vacuum-Processed Perovskite Solar Cells.

In this study, we present a novel method for controlling the growth of perovskite crystals in the vacuum thermal evaporation process by utilizing a vacuum-processable additive, propylene urea (PU). By coevaporation of perovskite precursors with PU to form the perovskite layer, PU, acting as a Lewis base additive, retards the direct reaction between the perovskite precursors. This facilitates a larger domain size and reduced defect density. Following the removal of the residual additive, the perovskite layer, exhibiting improved crystallinity, demonstrates reduced charge recombination, as confirmed by a time-resolved microwave conductivity analysis. Consequently, there is a notable enhancement in open-circuit voltage and power conversion efficiency, increasing from 1.05 to 1.15 V and from 17.17 to 18.31%, respectively. The incorporation of a vacuum-processable and removable Lewis base additive into the fabrication of vacuum-processed perovskite solar cells offers new avenues for optimizing these devices.

Passivation of 2D Cs2PbI2Cl2 Nanosheets for Efficient and Stable CsPbI3 Quantum Dot Solar Cells.

Inorganic CsPbI3 perovskite quantum dots (PQDs) possess remarkable optical properties, making them highly promising for photovoltaic applications. However, the inadequate stability resulting from internal structural instability and the complex external surface chemical environment of CsPbI3 PQDs has hindered the development of CsPbI3 PQD solar cells (PQDSCs). In this work, the capping layer composed of inorganic two-dimensional (2D) Ruddlesden-Popper (RP) phase Cs2PbI2Cl2 nanosheets (NSs) is introduced, which may be effectively treated to improve the surface properties of the CsPbI3 PQD film. This modification serves to passivate defects by filling cesium and iodine vacancies while optimizing the energy band arrangement and preventing humidity intrusion, leading to the meliorative stability and photovoltaic performance. The optimized CsPbI3 PQDSCs achieve an enhanced power conversion efficiency (PCE) of 14.73%, with the superb stability of only a 16% efficiency loss after being exposed to ambient conditions (30 ± 5% RH) for 432 h.

Enhancing perovskite solar cell performance: The role of polymer-assisted hole transport layers in hot carrier dynamics

Enhancing the efficiency and stability is very critical for perovskite solar cells (PSCs) commercialization. Herein, we report an effective approach to enable highly efficient and stable PSCs by incorporating a polymer material, poly[N, N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene) (named P(NDI2OD-T2)), into hole transport layer (HTL). Our research results exhibit that the addition of P(NDI2OD-T2) not only effectively improves the hole mobility and conductivity of HTL, but also makes its energy level more alignment with perovskite. More importantly, ultrafast carrier results demonstrate that the introduction of P(NDI2OD-T2) into Spiro-OMeTAD HTL can effectively improve the extraction and transfer of hot carriers from perovskite layer to HTL, and consequently reduce the recombination of charge carriers in the device. As a result, PSCs based on Spiro + P(NDI2OD-T2) as a HTL shows an enhanced power conversion efficiency (PCE) of 24.20 %, which is much higher than that of control device without P(NDI2OD-T2) (21.94 %). Furthermore, the un-encapsulated P(NDI2OD-T2)-treated PSCs exhibit excellent humidity, thermal and light stabilities, with the devices maintaining 94 % of its initial efficiency after 3000 h at ≈40 % humidity, 95 % of its initial efficiency after storage at 65 °C and 85 °C for 600 h, and 90 % of its initial efficiency after 600 h under one sun light irradiation, respectively. This work provides an effective strategy for improving the device efficiency and long-term stability of PSCs.

Optimization of boron depletion for boron-doped emitter of N-type TOPCon solar cells

During the preparation of boron-doped emitters for TOPCon solar cells, boron atoms accumulate, forming a boron-rich layer (BRL). Oxidation, during the boron diffusion process, can eliminate the BRL. Prolonged oxidation which forms a SiO2 layer can remove the BRL, also act as a protective mask for the front surface. Nevertheless, during high-temperature thermal oxidation, boron will be redistributed. Boron reaches a higher equilibrium concentration in SiO2 than in the silicon wafer, and the SiO2/Si interface shifts inward during SiO2 formation. Simultaneously, the high temperature during oxidation prompts the boron inside the silicon wafer to diffuse deeper. The dual effects of oxidation and diffusion cause boron to be depleted near the surface of the silicon wafer. Boron depletion leads to a reverse bending of the energy band, which hampers carrier collection and impedes further enhancement of cell power conversion efficiency. In this paper, the oxidation process was mainly adjusted to reduce surface boron depletion, resulting in approximately 0.09%abs. increase in power conversion efficiency compared to pre-optimization.

Low Bandgap Organic Semiconductors for Photovoltaic Applications

Photovoltaic is one of the best low-cost alternative energy sources. In this paper, organic semiconductors were explored as light harvesters due to their extraordinary properties, but initially, the scientific community focused on synthesizing the large bandgap organic semiconductors, which were unsuitable for photovoltaic applications. Wide bandgap organic semiconductors can capture light only from the UV–Vis region of the solar spectrum, thus showing solar cells’ power conversion efficiency (PCE) of less than 5%. By reducing the bandgap, organic semiconductors can show good compatibility with the air mass (AM) of 1.5 solar spectrums. So, the attention came toward synthesizing low bandgap semiconductors, which led to the enhancement of PCE from 5% to 17%. This review summarizes the overall development of the last 15 years in the field of organic photovoltaic semiconductors. The significant parameters in organic semiconductors are their bandgap, the position of the highest occupied molecular orbital (HOMO), and the lowest unoccupied molecular orbital (LUMO) that can easily be tuned chemically by molecular designing. One of the issues in organic photovoltaic solar devices is the need for absorbers with a narrow bandgap to maximize power conversion efficiencies to a great extent. Moreover, several factors, such as conjugation length, bond length alteration, intermolecular interaction, donor–acceptor charge transfer, planarity, and physical states, are responsible for tuning the bandgap. This review also classifies low bandgap semiconductors based on the core skeleton with their bandgaps, structures, and power conversion efficiencies.

Facile synthesis and application of hyperbranched TiO2 hollow spheres for enhancement of power conversion efficiency of CdSeTe quantum dot-sensitized solar cells

Facile synthesis and application of hyperbranched TiO2 hollow spheres for enhancement of power conversion efficiency of CdSeTe quantum dot-sensitized solar cells

Zn-doped CdSSe composite quantum dots synthesized by a two-step hydrothermal ion exchange in sensitized solar cells

Metal ion doping is an effective strategy for enhancing the photoelectric properties of quantum dots (QDs). In this study, Zn-doped CdSSe composite QDs (ZnCdSSe) were synthesized using a two-step hydrothermal ion exchange method. The synthesis process involved the exchange reaction of Cd2+ with Zn2+, followed by the exchange reaction of Se2− with S2−, based on ZnS templates. The morphology, composition and crystalline phase of synthesized QDs were characterized using X-ray and electron-based techniques such as XRD, SEM, TEM, and XPS. The results indicate ZnCdSSe QDs were synthesized while preserving a similar morphology to that of ZnCdS. Performance tests demonstrated that quantum dot sensitized solar cells (QDSSCs) equipped with ZnCdSSe/TiO2 photoanodes achieved a power conversion efficiency (PCE) of 3.61% by optimizing the hydrothermal reaction temperature and time. This efficiency was 33.2% higher than that of CdSSe (2.17%) QDSSCs synthesized via a one-step hydrothermal exchange reaction using CdS templates. The significant enhancement in PCE can be attributed to improvements in light absorption and charge carrier transport. Notably, Zn doping reduced interface charge recombination and prolong electronic lifetime (τn), facilitating more effective charge collection in QDSSCs.

Introduction of Co atoms into CdS thin films for improving photovoltaic properties

This paper represents a systematic work on the fabrication of chemical bath-grown CdS films with and without Co atoms and their photovoltaic performances in hybrid solar cells. Structural properties showed 1% Co-doping promoted crystal quality of CdS films. However, a poor crystal quality was developed above 3% Co concentrations. A reduction in sphere size of CdS samples was observed for 1% Co-doping which was ascribed to slow growth of film. Optical examination demonstrated CdS films with 1% Co-doping displayed the highest transparency of 85% in the visible and near-infrared regions, which were explained by the improvement of crystal quality. A maximum band gap of 2.43eV was found for 1% Co-doped CdS films, whereas an increase in Co concentration to 7% led to a decline in the band gap of CdS that was attributed to sp-d exchange interaction. Photoluminescence data showed Co-doped CdS films had lower PL peak intensity than that of CdS, demonstrating a decrease in the number of intrinsic defects. Photovoltaic measurements displayed that the best efficiency of 0.488% was achieved for CdS-based device including 1% Co atoms, which were almost a seven-fold boost in overall efficiency compared to bare CdS-based device. The enhancement in power conversion efficiency originated from an increase in short-circuit current density of 1% Co-doped CdS-based photovoltaic cell.

Exploring various Integration Methods of carbon quantum dots in CsPbCl3 perovskite solar cells for enhanced power conversion efficiency

In this study, we explore the integration of carbon quantum dots (QDs) in cesium lead halide perovskite solar cells (PSCs) across the electron transport layer (ETL), hole transport layer (HTL), and the perovskite absorber to enhance power conversion efficiency (PCE). We conduct a comprehensive investigation from thin film analysis to complete device characterization, encompassing eight different device topologies. Our results reveal that the integration of QDs in various layers significantly impacts the performance of the PSCs. Notably, adding QDs in the HTL and ETL improves charge transport and reduces recombination, enhancing device efficiency. Furthermore, introducing QDs in the perovskite layer leads to modifications in the energy landscape, reducing charge trapping and enhancing stability. We observe a trade-off between short-circuit current and overall PCE, with different QD integration strategies yielding distinct performance outcomes. Additionally, incorporating QDs in the ETL layer reduces hysteresis, attributed to mitigated ion migration and charge-trapping effects. Overall, the addition of QDs in these layers demonstrates improved charge transport, reduced recombination, and enhanced stability, ultimately contributing to the enhanced performance and efficiency of perovskite solar cells, reaching 22.5%. This study paves the way for future investigations into the potential of QDs in PSC technology and their impact on device forecasting and operational stability.

Ternary organic bulk-heterojunction strategy enables efficient light utilization for perovskite solar cells

Extending the photoresponse into the near-infrared region (NIR) is an urgent research topic in perovskite solar cells. A ternary bulk heterojunction (BHJ) layer composited with PC61BM, D18-Cl and Y6 was deposited onto the perovskite to broaden light absorption. The ternary BHJ layer can absorb low-energy photons in the NIR region (800–920 nm) and generate excitons. Subsequently, these excitons dissociate into free electrons and holes at the donor-acceptor interface, thus extending the device's photo response up to 920 nm. Moreover, due to the good electron transport capabilities of the acceptors Y6 and PC61BM in the BHJ film, the BHJ layer also acts as the electron transport layer in the inverted PSC device. The inverted P–I–N device based on perovskite/BHJ achieved an external quantum efficiency (EQE) up to 30% in the near-infrared range. Compared to control PSCs, the short-circuit current (JSC) increased from 21.64 to 24.35 mA cm−2, resulting in a high PCE of 19.88%. Additionally, the high hydrophobic surface of the ternary layer contributes to the good long-term stability of the device. The results demonstrate that the ternary organic bulk heterojunction is an effective strategy for achieving efficient light utilization in the near-infrared region and enhancing power conversion efficiency in perovskite solar cells.

Dual Frequency Energy Harvesting System Based on Planar Inverted F-shaped Antenna

<p>With the expansion of Internet of things (IoT) scale and the extension of its application fields, node energy acquisition has become one of the constraints on the development and application of IoT technology. Wireless energy acquisition is faced with the challenge of how to enhance power conversion efficiency under low input power in the broadband range. This study aimed to improve the capability of energy collection and transmission in wireless communication, an efficient dual-frequency energy harvesting system was proposed, moreover a novel dual-frequency planar inverted-f antenna (PIFA) and its energy conversion circuit for Radio frequency (RF) energy harvesting were designed by studying the characteristics of ambient RF energy and antenna. The developed antenna is designed and manufactured for GSM 900mhz or DCS 1.8 GHz to harvest the ambient energy provided by nearby devices. It is proved that the new dual-frequency antenna still has high efficiency when the input power is less than -20 dbm, and can maximize the receiving energy. The system works with an energy conversion and storage module to convert weak signals into required voltages, the simulation and test results show that the maximum conversion efficiency of the prototype is about 65% at 920MHZ and 1.8GHz at -20 dBm input power.</p> <p> </p>

Performance analysis of A3B2X9 (Cs3Bi2I9) based perovskite photovoltaic tandem structure with crystalline Silicon (c-Si)

The efficiency of solar cells with single-junction utilizing organic-inorganic hybrid perovskites have attained a value more than 25.5%. The device power conversion efficiency (PCE) can be improved further either by optimizing the absorber layer (Perovskite film) or by investigating the novel device structures such as tandem based solar cells with perovskite and silicon. This combination of top cell (Perovskite solar cell) and bottom cell (Silicon solar cell) can improve the PCE which surpasses the Shockley-Queisser limit of single-junction solar cells by utilizing a wider range of solar spectrum. This paper presents an optimization and simulation of standalone Cs3Bi2I9 perovskite solar cell which was later integrated with a c-Si solar cell to simulate a tandem structure using SCAPS-1D software. The aim is to investigate the performance enhancement of the perovskite solar cell by optimizing it and stacking it on top of a high-efficiency c-Si solar cell using a four-terminal (4T) structure. At a short-circuit current density of 16.165 mA/cm2 and an open-circuit voltage of 1.41 V, the simulation findings demonstrate that the Cs3Bi2I9 perovskite solar cell exhibits a high-power conversion efficiency of 20.37%. The tandem structure demonstrates an enhanced power conversion efficiency of 31.59% which is significantly higher than the efficiency of the individual cells. The Cs3Bi2I9 perovskite solar cell is a great choice for application in tandem systems with c-Si solar cells for high-efficiency, according to the simulation results. This study provides valuable insights for the development of efficient perovskite/c-Si tandem solar cells.