Energy Eac Research Articles

Spectroscopic ellipsometry study of ion-implanted Si(100) wafers

Optical properties of P+ ion-implanted Si(100) wafers have been studied using spectroscopic ellipsometry (SE). The P+ ions are implanted at 150 keV with fluences ranging from 1×1014 to 2×1015 cm−2 at room temperature. An effective-medium-approximation analysis suggests that the ion-implanted layer can be explained by a physical mixture of microcrystalline and amorphous silicon. The ε(E) spectrum of the microcrystalline component is found to differ appreciably from that of single-crystalline silicon, especially in the vicinity of the sharp critical-point features. This difference in ε(E) can be successfully interpreted by increasing the broadening parameter at each critical point. Considering these and previous data, we obtain an expression, A=(5.13×1011/EacM)1.872, which enables us to estimate the amorphization-threshold fluence A for silicon implanted with optional ion species of mass number M at energy Eac in keV. No clear change in the original structure of silicon surface after P+ ion implantation has been observed by atomic force microscopy. SE has been proven to be an easy, fast, and nondestructive technique which can be used to assess important ion-implantation parameters.