Thickness Of Emitting Layer Research Articles

Полевая электронная спектроскопия молекулярно-напыленного оксидного термокатода

The results of a study of the emission characteristics of a molecular-sprayed oxide thermocathode based on triple carbonate of alkaline earth metals with an emission layer thickness of ~1 µm in the operating temperature range of 590-730 °C. are presented. The results are in good agreement with those obtained earlier for a serial oxide thermocathode with an emission layer thickness of ~100 µm applied by pulverization, and correspond to the model of a "spotted cathode" - a superposition of emission spots at different stages of activation. An idea of the activation phenomenon occurring at a given temperature in a certain range of values of the electric field strength on the surface of emission spots is detailed both with an increase and a decrease in the anode voltage. The energy spectra of the emitted electrons of a separate emission spot with a half-height width of ~100 meV have been obtained. The values of the potential change of the emitting surface of the cathode within the probed region of 0.9 V and the potential drop on the emission layer under the probed region of 4.1 V were measured.

Performance optimization of green tandem OLEDs with double emitting layers

The utilization of a double emitting layer structure with well-matched energy levels has been shown to improve carrier balance and decrease operating voltages in organic light-emitting diodes (OLED). In this study, tandem OLEDs with double emitting layers (DEMLs) are successfully fabricated and optimized. Through adjusting the emitting layer thickness ratio and cavity length, the optimized green tandem OLEDs show driving voltages of 4.8 and 5.4 V, with current efficiency (CE)/power efficiency (PE) of 242.4 cd/A/158.6 lm W−1 and 237.1 cd/A/137.9 lm W−1 at 100 and 1000 cd m−2, respectively. The ultra-high CE of 242.4 cd/A is the state of the art among all reported two-units green tandem OLEDs. Meanwhile, the device at the initial luminance of 10000 cd cm−2 also displays an extremely long LT50 of 734.8 h. In addition, the tandem OLED can emit pure green light with color coordinates of (0.27, 0.71), and has the ability to adjust the color coordinates by varying the cavity length.

Improving the Device Stability by Controlling the Morphology of Quantum Dot Emissive Layer Via a Coating Process in Blue QLEDs

AbstractBlue light‐emitting CdSe@ZnS/ZnS quantum dot (QD) nanoparticles (NPs) were synthesized and their photophysical properties in both solution and film phases were investigated. The morphological properties of films prepared by different coating methods i. e. single layer coating from low to high concentrations of QD solutions and layer‐by‐layer (multilayer) coating within constant low QD solution concentration, were also examined in detail. Varying the concentration (1–10 mg/mL) and the number of layers (from 1–16) did not essentially affect the photophysical properties of QD films, although it resulted in a direct increment in QD film thickness. The concentration and layer‐dependent films were used as an emissive layer (EML) in QD light‐emitting diodes (QLEDs). Although the “6 mg/ml−1 Layer” QD EML‐based device exhibited relatively high device efficiency compared to the “1 mg/ml−10 Layers” based one at working voltage region, it had ~2‐fold higher efficiency roll‐off at high voltage region. The performance differences for both devices with the same QD EML thickness were attributed to the morphological variations for the QD layer in terms of surface roughness, void density, aggregates/clusters, and trap sites that were directly related to the charge injection balance and Auger recombination.

Development and synthesis of anthracene-based fluorescence material for non-doped OLEDs

Efficient organic blue materials are essential to develop highly efficient organic light-emitting diodes. However, there is a challenge to commercialize efficient blue compounds due to the fundamentally wide band gap and the lack of pure blue emitters. In this study, the new anthracene-based fluorescent emitter, (4-(10-(4-(9H-carbazol-9-yl)-2-methylphenyl)anthracen-9-yl)-3-methylphenyl)diphenylphosphine oxide (CZm-AN-mPO) was designed and synthesized. The thermal, photophysical and electrochemical properties of the CZm-AN-mPO were systematically investigated. The CZm-AN-mPO exhibits a deep-blue emission at 425 nm and AIE property with a relatively narrow full-width at half maximum of 34 nm. The CZm-AN-mPO based non-doped devices show pure blue emission. The optimized OLEDs indicated maximum external efficiencies of 4.3% and 4.2% at emission layer thickness of 20 nm and 40 nm, respectively.

Film thickness dependent color purity of WOLEDs in a Phenanthroimidazole derivative due to electromers

Recently, derivatives of Phenanthroimidazole (Phen-I) based small molecules have been synthesized for OLED applications. Their photophysical characterization revealed they were fluorescent with a high quantum yield, indicating their suitability as an emissive layer (EML) in OLEDs. In this paper, we report and compare the OLED performance of two Phen-I derivatives. One contains thiophene (compound 1), and the other, newly designed and synthesized, has perylene (compound 2) as a functional group. Devices of 1 with lower EML thickness (∼70 nm) showed bluish white emission, while devices with higher EML thickness (> ∼100 nm) showed color tunability from bluish-white (CIE co-ordinates: (0.26, 31)) light at lower voltage to almost pure white (CIE co-ordinates: (0.29, 32)) light at higher voltages forming WOLED. The WOLED formed for 1 at all thickness of the EML is attributed to the combined monomer and electromer emission. In addition, the voltage-dependent change in colour purity observed for higher EML thickness is attributed to increased electromer species, indicating stronger intermolecular interactions due to well-connected grains in their thin films. In contrast, devices of compound 2 showed yellow-orange emission independent of the thickness of the EML. The optimized geometry for all devices was ITO/PEDOT: PSS /NPD/1 or 2 /BPhen/LiF-Al. Devices of 2 were more efficient than those of 1, indicating that forming electromers, though advantageous in giving WOLEDs, reduces the device efficiency.

AlGaAs photocathode with enhanced response at 532 nm

The AlGaAs photocathode can be used in the field of underwater optical communication because of its fast response speed and adjustable spectral response range. In order to solve the problem that the low light absorption of the AlGaAs emission layer limits the improvement of its quantum efficiency, the distributed Bragg reflector (DBR) structure is used to reflect the light at a specific wavelength back to the emission layer to further increase the absorption rate, thus improving the response capability of the photocathode at 532 nm. The spectral response model of the AlGaAs photocathode with DBR structure is obtained by solving one-dimensional continuity equation. The optical model of the AlGaAs photocathode with enhanced response at 532 nm is established by the finite-difference time-domain method. The effects of the sublayer periodic pairs, the sublayer material and the thickness of emission layer and buffer layer on the absorption rate of emission layer are analyzed. The light absorption distributions of AlGaAs photocathode with and without DBR structure are compared, and the influence mechanism of DBR structure on the blue-green light absorption capacity of AlGaAs photocathode emission layer is clarified, which can provide a theoretical basis for designing its structural parameters. The results show that the DBR structure with a periodic pair of 20 and Al<sub>0.7</sub>Ga<sub>0.3</sub>As/AlAs has the best reflection effect on 532 nm light. Based on the DBR structure, when the thickness of the emission layer and buffer layer are 495 nm and 50 nm, respectively, the emission layer has the best absorption rate of 532 nm light. Furthermore, two kinds of AlGaAs photocathodes with and without DBR structure are prepared by the metal-organic chemical vapor deposition technology, and the reflectivity and profile structure of the grown samples are characterized. Then the Cs/O activation experiments are performed to compare the spectral response curves. It is found that the spectral response of the AlGaAs photocathode sample with DBR structure at 532 nm wavelength is about twice that of the sample without DBR structure.

Improvement and structure optimization of transmission-mode GaAs photocathode performance

In order to improve the performance of transmitted GaAs photoelectric cathode, the quantum efficiency curve of Chinese transmitted GaAs photoelectric cathode is compared with that of the product of American ITT company, showing that the integration sensitivity of Chinese transmitted photoelectric cathode is 2130 μA/lm, and the American ITT company’s reaches 2330 μA/lm. Through the matrix method to solve the three membranes, the theoretical reflectivity is obtained. Based on the uniform doping transmission GaAs photocathode quantum efficiency formula, by replacing the fixed value <i>R</i> with variable value <inline-formula><tex-math id="M1">\begin{document}$ {R}_{{\mathrm{t}}{\mathrm{h}}{\mathrm{e}}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="3-20231542_M1.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="3-20231542_M1.png"/></alternatives></inline-formula>, adding the short wave constraint factor, and modifying the quantum efficiency formula, a modified uniform doping transmission GaAs photocathode quantum efficiency formula is obtained. Using the revised quantum efficiency, optical performance and integral sensitivity theory model, through fitting the quantum efficiency curve of American ITT company product , introducing the ITT cathode component performance parameters, comparing the performance parameters of Chinese product, the results show that the Chinese photocathode in the window layer, the thickness of the emission layer, electron diffusion length and rear interface composite rate has a certain gap with ITT’s. In order to shorten the gap between the two and optimize the cathode structure parameters, the transmission GaAs photocathode optical structure software is designed to further analyze the influence of the electron diffusion length and the emission layer thickness on the quantum efficiency of the photocathode. The results show that with an electron diffusion length of 7 μm and emission layer thickness of 1.5 μm, the transmitted GaAs photocathode sensitivity can be more than 2800 μA/lm. However, the large electron diffusion length has high requirements for cathode materials and preparation level. The reasons responsible for the performance gap between Chinese product and other country’s are that in China the growth process of cathode materials is not jet matureand the cathode preparation equipment is out of date . In this paper, we study the relationship between GaAs photocathode optical performance and photoemission performance, and further optimize the structural design of cathode components, which has certain guiding significance for improving the cathode quantum efficiency and the level of image intensifier.

Effects of charge generation layers on multiple guest/host bilayer-based tandem OLEDs

Compared to OLEDs with a guest/host system as the light emitting layer (EML), in which guest molecules are doped or mixed into the host molecule layer, those with multiple guest/host bilayers as the EML has the advantage of uniform distribution of guest-to-host molecule ratio throughout the entire emission layer thickness. Herein, we report on the tandem OLED based on multiple guest/host bilayers as the EML, and the effects of charge generation layers (CGL) on device performance for the first time. With four pairs of vacuum evaporated host of 4,4′-Bis(N-carbazolyl)-1,1′-biphenyl (CBP) and guest of bis(1-phenylisoquinoline) (acetylacetonate) iridium(III) (Ir(piq)2(acac)) as the EML, two types of tandem OLEDs with 8-Hydroxyquinolinolato-lithium (Liq)/MoO3 or Liq/2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN) bilayer as the charge generation layer, respectively, were investigated. The results showed that the device with Liq/MoO3 as CGL (T1) exhibited higher current efficiency but lower power efficiency than the one with Liq/HAT-CN as the CGL (T2). Single carrier devices with either Liq/MoO3 or Liq/HAT-CN as the charge injection layer were fabricated to investigated charge injection ability of the CGLs. The results show that Liq/MoO3 CGL exhibit both lower electron and hole injection ability than Liq/HAT-CN, which is the origin of higher turn-on volage and lower power efficiency of T1 than T2. However, the balance degree of electron and hole injection of Liq/MoO3 is better than Liq/HAT-CN, resulting higher current efficiency of T1 than T2. These results provide a novel strategy towards fabricating high performance tandem OLEDs.

Thickness-variation-insensitive near-infrared quantum dot LEDs

In terms of tunable luminescence and high quantum efficiency, colloidal quantum dots (CQDs) are promising semiconductors for constructing near-infrared light-emitting diodes (NIR-LEDs). However, currently available NIR-LEDs are susceptible to variations in the emission layer thickness (EMLT), the highest external quantum efficiency (EQE) decreases to below 50% (relative to peak EQE) when the EMLT varies out of a narrow range of (±30 nm). This is due to the thickness-dependent carrier recombination rate and current density variation, resulting in batch-to-batch EQE fluctuations that limit LED reproducibility. Here we report efficient NIR-LEDs that exhibit EQE variations of less than 15% (relative to the champion EQE) over an EMLT range of 40–220 nm; the highest achievable EQE of ∼11.5% was obtained by encapsulating a 212 nm-thick CQD within a type-I inorganic shell to enhance the radiative recombination in the dots, resulting in a high photoluminescence quantum yield of 80%, and by post-treating the films with a bifunctional linking agent to improve and balance the hole and electron mobilities in the entire film (electron mobility: 8.23 × 10−3 cm2 V−1 s−1; hole mobility: 7.0 × 10−3 cm2 V−1 s−1). This work presents the first NIR-LEDs that exhibit EMLT-invariant EQE over an EMLT range of 40–220 nm, which represents the highest EQE among reported CQD NIR-LEDs with a QD thickness exceeding 100 nm.

Enhanced Operational Stability by Cavity Control of Single-Layer Organic Light-Emitting Diodes Based on Thermally Activated Delayed Fluorescence.

Highly efficient organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) emitters have been realized in recent years, but the device lifetime needs further improvement for practical display or lighting applications. In this work, we present a device design principle by tuning the optical cavity of single-layer undoped devices, to realize efficient and long-lived TADF OLEDs. Extending the cavity length to the second-order interference maximum by increasing the emissive layer thickness broadens the recombination zone, while the optical outcoupling efficiency remains close to that of the thinner first-order devices. Such a device design leads to efficient and stable single-layer undoped OLEDs with a maximum EQE of 16%, a LT90 of 452h and LT50 of 3693h at an initial luminance of 1000cd m-2 , which is doubled compared to the first-order counterparts. We further demonstrate that the widely-used empirical relation between OLED lifetime and light-intensity originates from triplet-polaron annihilation, resulting in an extrapolated LT50 at 100cd m-2 of close to 90,000h, approaching the demands for practical backlight applications. This article is protected by copyright. All rights reserved.

The achievement of high-performance and allochroic organic light-emitting diodes via nondoped 4CzPN ultrathin emissive layer

The device fabrication process can be simplified by the employment of ultrathin nondoped emission layer (UT-EML). Based on 1,2,3,4-tetrakis(carbazol-9-yl)-5,6-dicyanobenzene (4CzPN) emitter, the influence of the thickness of ultrathin emissive layer on the device properties was systemically investigated. The high-performance nondoped device was fulfilled by utilizing a 0.02 nm ultrathin emissive layer. The nondoped device delivered the maximum efficiencies of 9.0%, 30.0 cd A−1, and 15.0 lm W−1, accompanied by the peak luminance of 30 597 cd m−2, whilst the corresponding properties of the doped device with a similar configuration were 7.4%/23.7 cd A−1/14.9 lm W−1, and 10 072 cd m−2. Moreover, the efficiency roll-off (just 1.5% from peak to the value at 5 000 cd m−2) of nondoped device was much superior to that of doped devices (46%). Besides, the color can be tuned by controlling the thickness of ultrathin emissive layer and applied voltage, exhibiting potential applications in the field of smart lighting and anti-counterfeiting. When the emission layer thickness was increased from 0.02 to 1.0 nm, the CIE coordinates of devices under 6 V shifted from (0.322, 0.603) to (0.436, 0.537). And the device with a 1.0-nm-thick emissive layer showed a ΔCIE of (0.056, 0.023) with the increase of bias voltage from 5 to 12 V. These results shed light on that nondoped ultrathin emission layer holds great potential for high performance and color-tunable TADF OLEDs.

Enhanced blue-green response of nanoarray AlGaAs photocathodes for underwater low-light detection.

Underwater optical communication and low-light detection are usually realized via blue-green laser sources and blue-green light-sensitive detectors. Negative-electron-affinity AlGaAs photocathode is an ideal photosensitive material for ocean exploration due to its adjustable spectrum range, long working lifetime, and easy epitaxy of materials. However, compared with other photocathodes, the main problem of AlGaAs photocathode is its low quantum efficiency. Based on Spicer's three-step photoemission model, nanoarray structures are designed on the surface of AlGaAs photocathode to improve its quantum efficiency from two aspects of optical absorption and photoelectron transport. Through simulation, it is concluded that the cylinder with diameter of 120 nm and height of 600 nm is the best nanoarray structure, and its absorptance is always greater than 90% in the 445∼532 nm range. Moreover, the absorptance and quantum efficiency of the cylinder nanoarray AlGaAs photocathode are less affected by the incident angle. When the angle of incident light reaches 70°, the minimum absorptance and quantum efficiency are still 64.6% and 24.9%. In addition, the square or hexagonal arrangement pattern of the nanoarray has little effect on the absorptance, however, a reduction in the overall emission layer thickness will decrease the absorptance near 532 nm.

Analyzing the ZnO and CH3NH3PbI3 as Emitter Layer for Silicon Based Heterojunction Solar Cells

Today, it has become an important task to modify existing traditional silicon-based solar cell factory to produce high-efficiency silicon-based heterojunction solar cells, at a lower cost. Therefore, the aim of this paper is to analyze CH3NH3PbI3 and ZnO materials as an emitter layer for p-type silicon wafer-based heterojunction solar cells. CH3NH3PbI3 and ZnO can be synthesized using the cheap Sol-Gel method and can form n-type semiconductor. We propose to combine these two materials since CH3NH3PbI3 is a great light absorber and ZnO has an optimal complex refractive index which can be used as antireflection material. The photoelectric parameters of n-CH3NH3PbI3/p-Si, n-ZnO/p-Si, and n-Si/p-Si solar cells have been studied in the range of 20–200 nm of emitter layer thickness. It has been found that the short circuit current for CH3NH3PbI3/p-Si and n-ZnO/p-Si solar cells is almost the same when the emitter layer thickness is in the range of 20–100 nm. Additionally, when the emitter layer thickness is greater than 100 nm, the short circuit current of CH3NH3PbI3/p-Si exceeds that of n-ZnO/p-Si. The optimal emitter layer thickness for n-CH3NH3PbI3/p-Si and n-ZnO/p-Si was found equal to 80 nm. Using this value, the short-circuit current and the fill factor were estimated around 18.27 mA/cm2 and 0.77 for n-CH3NH3PbI3/p-Si and 18.06 mA/cm2 and 0.73 for n-ZnO/p-Si. Results show that the efficiency of n-CH3NH3PbI3/p-Si and n-ZnO/p-Si solar cells with an emitter layer thickness of 80 nm are 1.314 and 1.298 times greater than efficiency of traditional n-Si/p-Si for the same sizes. These findings will help perovskites materials to be more appealing in the PV industry and accelerate their development to become a viable alternative in the renewable energy sector.

Research on reflection-mode InxGa1-xN thin film photocathode

The ternary nitride alloy InxGa1-xN, characterized by tunable band gap, can be used in photoelectric devices to achieve a wide spectrum response of UV-infrared light. A complete photoemission theoretical model of reflective InxGa1-xN thin film vacuum photocathode is established based on the “Spicer's model” and “Andachi model”. The simulation experiment of InxGa1-xN thin film photocathode is constructed by COMSOL Multiphysics software based on the finite element method. By analyzing the optical absorption and the distribution of photogenerated carrier concentration of photocathode, it is found that the photoconversion performance of photocathode can be enhanced by optimizing the thickness of emission layer and the angle of polarized light. The peak quantum efficiency and peak spectral responsivity of In0.5Ga0.5N photocathode with a thickness of 400 nm are 63.13% and 240.83 mA/W, respectively. The quantum efficiency of In0.5Ga0.5N photocathode with an incidence angle of 50° of TM mode polarized light can be increased to 65.99% compared with that with normal incidence. Therefore, the simulation results of this paper can provide reference for the design of wide spectrum photodetectors and vacuum electron sources.

Modeling the width of exciton formation zone in organic light emitting diode

The width of exciton formation zone has been simulated in a single-layer organic light emitting diode (OLED) based on the model of carrier device lifetimes. The width of exciton formation zone decreases with device current density increasing. Increasing the thickness of emissive layer (EML) is able to widen exciton formation zone. There is an optimal value of EML’s charge carrier mobility to maximize the width of exciton formation zone. In addition, the width of exciton formation zone increases markedly with the trap density of EML increasing, and shows certain correlation with the dielectric constant of EML. The current modeling provides novel insights on optimizing EMLs towards wide exciton formation zone, helpful for extending operational stability of OLED.

Photoemission from GaAs-based photocathodes with multilayer complex structures

To enhance the near-infrared response of photocathodes in the application of image detection, two kinds of multilayer complex structures of GaAs-based photocathodes are developed by changing the structure of the buffer layer underneath the emission layer, wherein one is the graded bandgap structure, and the other is the distributed Bragg reflector (DBR) structure. The theoretical quantum efficiency suitable for the reflection-mode (r-mode) GaAs-based photocathode with these two kinds of buffer structures are deduced based on one-dimensional continuity equations, among which the reflectivity changing with the wavelength of incident light is considered in particular. By comparison of spectral characteristics of photocathodes with the two different structures, and analysis of cathode structure parameters, it is found that the photoelectric performance of the photocathodes with the two structures are quite different, and the structure parameters especially the thickness of GaAs emission layer have a great impact on the spectral characteristic. The quantum efficiency of photocathode with graded bandgap structure is improved due to the introduction of the built-in electric field and the decrement of interface recombination, while for cathode with DBR structure, the quantum efficiency is improved by the multiple reflection of light between two parallel mirrors in the stack of alternating quarter-wave layers of high and low refractive. The theoretical quantum efficiency calculation and analysis would provide theoretical guidance for the better design of GaAs-based photocathodes.

73‐4: Novel Materials and Structures for High Efficiency and Long Lifetime Green Phosphorescent OLEDs in Automotive Applications

A long lifetime and high efficiency organic light emitting diode (OLED) was developed with optimization of each organic materials. We improved the operational lifetimes of the green photphorescent OLEDs based on the balance beween hole and electron inside the emission layer (EML) affects the lifetime of OLEDs. The operational lifetimes become long with increasing the density of hole carrier in the EML. For that purpose, we fabricated with using the new electron blocking layer (EBL) and hole blocking layer (MBL) and optimized the thickness of EML. The lifetimes of the green phosphorescent OLEDs developed in this study were achieved over −2.6 times better lifetimes at room temperature than that of reference device. Finally, this green phosphorescent OLEDs are fabricated for mass production of automotive application.

Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation

To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure, a general theoretical temporal response model is deduced by combining the unsteady continuity equation and numerical calculation method. Through the model, the contribution of the distribution Bragg reflection structure and graded-bandgap emission layer to the temporal response are investigated. Meanwhile, the relationships between the temporal response characteristics of the laminated GaAs-based photocathode and different structural parameters are also analyzed, including average electron decay time, emission layer thickness, and incident light wavelength. It is found that the introduction of distribution Bragg reflection (DBR) layer solves the discrepancy between the absorption capability of the emission layer and the temporal response. Moreover, the distributed Bragg reflection layer can improve the time response by optimizing the initial photoelectron distribution. The improvement effect of the DBR layer on the temporal response is enhanced with the emission layer thickness decreasing or the incident light wavelength increasing. These results explain the effect of the DBR layer of the photocathode on the dynamic characteristics, which can offer a new insight into the dynamic research of GaAs-based photocathode.

Effect of Laser Emission Mode and Layer Thickness on the As-Built Microstructure of a Selective Laser Melted Maraging Steel

Effect of Laser Emission Mode and Layer Thickness on the As-Built Microstructure of a Selective Laser Melted Maraging Steel

Comprehensive Understanding of the Role of Emitter Layer Thickness for Metal–Oxide–Semiconductors Based Solar Cells

Achieving low-cost and high-performance solar cells based on heterojunction of metal–oxide–semiconductors with silicon (Si) is a difficult task. We herein report the development of cost-effective and efficient SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /p-Si heterojunction-based solar cells using the low-temperature hydrothermal method. The fabrication of SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Si heterojunction-based solar cells is realized with various thicknesses of SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer deposited by controlling the hydrothermal deposition time. The measurements of scanning electron microscopy, optical spectra, four-point probe conductivity, current–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I–V</i> ), and capacitance–voltage ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C–V</i> ) reveal that the thickness of SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> emitter layer significantly influences the electrical properties and the photovoltaic performance of the devices. The best power conversion efficiency of 3.09% ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J_sc</i> = 20.28 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V_oc</i> = 0.312 V, and FF = 48.84%) is achieved for the solar cell having n-SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> thickness of 391 nm. The experimental findings disclose that the efficiency of the cells is extremely dependent on the emitter layer thickness, which plays a vital role in determining light-harvesting characteristics and carrier collective capabilities of the cells.