Emission Properties Of Quantum Dots Research Articles

ZnS@ fluorenone derived multifunctional quantum dots for simultaneous recognition of bovine serum albumin (BSA) and copper ions (Cu2+) in aqueous blood and urine samples

An efficient synthesis of water-stable and fluorescent ZnS quantum dots has been executed beginning with its organic predecessor possessing fluorenone for sensing bovine serum albumin (BSA) among other proteins. Moreover, the organic predecessor of quantum dots has also been utilized for sensing of F- ions with binding constant of 1.8 × 104 M−1. Various spectroscopic techniques such as high-resolution transmission electron microscopy (HRTEM), powder X-ray diffraction (PXRD), UV-visible (UV-vis), Fourier transform infrared (FTIR), thermogravimetric (TGA), Energy dispersive X-ray analysis (EDX), circular dichroism (CD) and Fluorescence (FL) spectroscopy have been utilized for the characterization of the developed quantum dots. The emission properties of quantum dots made them useful for the sensing of BSA and Cu2+ accompanied with secondary sensing of urea. The LODs value for BSA and Cu2+ were calculated as 213 and 211 nM, respectively. Demonstrating remarkable efficacy, these quantum dots have been successfully employed for the discernment of BSA in human blood and urine samples, achieving an outstanding recovery rate of up to 99.8%.

Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation

InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important roles in the emission efficiency degradation of QDs, but the formation mechanism of defects in oxidized QDs has been less investigated. Here, we investigated the impact of diverse structural defects formation on individual QDs and propagation during UV-facilitated oxidation using high-resolution (scanning) transmission electron microscopy. UV-facilitated oxidation of the QDs alters shell morphology by the formation of surface oxides, leaving ZnSe surfaces poorly passivated. Further oxidation leads to the formation of structural defects, such as dislocations, and induces strain at the oxide-QD interfaces, facilitating In diffusion from the QD core. These changes in the QD structures result in emission quenching. This study provides insight into the formation of structural defects through photo-oxidation, and their effects on emission properties of QDs.

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission.

Aluminium Gallium Nitride (AlyGa1-yN) quantum dots (QDs) with thin sub-µm AlxGa1-xN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force microscopy for different deposited thicknesses. It was shown that for thicker AlN layers (i.e., 200 nm), the surface roughness can be reduced and hence a better surface morphology is obtained. Next, AlyGa1-yN QDs embedded in Al0.7Ga0.3N cladding layers were grown on the AlN and investigated by atomic force microscopy. Furthermore, X-ray diffraction measurements were conducted to assess the crystalline quality of the AlGaN/AlN layers and examine the impact of h-BN on the subsequent layers. Next, the QDs emission properties were studied by photoluminescence and an emission in the deep ultra-violet, i.e., in the 275-280 nm range was obtained at room temperature. Finally, temperature-dependent photoluminescence was performed. A limited decrease in the emission intensity of the QDs with increasing temperatures was observed as a result of the three-dimensional confinement of carriers in the QDs.

Photoluminescence Investigation of Carrier Localization in Colloidal PbS and PbS/MnS Quantum Dots.

The existence of surface organic capping ligands on quantum dots (QDs) has limited the potential in QDs emission properties and energy band gap structure alteration as well as the carrier localization. This drawback can be addressed via depositing a thin layer of a semiconductor material on the surface of QDs. Herein, we report on the comparative study for photoluminescent (PL) properties of PbS and PbS/MnS QDs. The carrier localization effect due to the alteration of energy band gap structure and carrier recombination mechanism in the QDs were investigated via PL measurements in a temperature range of 10–300 K with the variation of the excitation power from 10 to 200 mW. For PbS QDs, the gradient of integrated PL intensity (IPL) as a function of excitation power density graph was less than unity. When the MnS shell layer was deposited onto the PbS core, the PL emission exhibited a blue shift, showing dominant carrier recombination. It was also found that the full width half-maximum showed a gradual broadening with the increasing temperature, affirming the electron–phonon interaction.

Effect of Ligand Concentration, Dilution, and Excitation Wavelength on the Emission Properties of CdSe/CdS Core Shell Quantum Dots and Their Implication on Detection of Uranium

AbstractMany applications of quantum dots (QDs); such as solar energy harvesting and toxic ion detection advice to understand the photoluminescence properties of QDs in water. However, this property can vary with concentration, purification and excitation wavelength which is seldom understood and can affect the above mentioned applications. The work carried out in this article demonstrates the effect and importance of these parameters on the photoluminescence properties of water dispersible CdSe/CdS core shell QDs. Three core shell QDs having the same core and shell thickness, but different number of ligands were synthesized. It was observed that the ligand concentration, excitation wavelength and concentration has a profound effect on the emission properties of QDs. The effect of above mentioned parameters on the detection of uranium by QDs was also discussed and it was shown that tuning these parameters can impact the detection limit drastically. A detection limit of 10 ppb was achieved by varying the experimental conditions which is much below than the limit prescribed by World Health Organization for uranium in drinking water suggesting the potential of these dots in sensing application and importance to tune different experimental conditions to achieve at a better detection limit.

Optical properties of Cu ions‐doped ZnSe quantum dots in silicate glasses

AbstractIn order to alleviate the effect of the surface defects on the emission properties of quantum dots, copper ions‐doped ZnSe quantum dots (QDs) in the glasses are prepared using melt‐quenching and subsequent thermal annealing methods. For glasses without copper doping, tunable band‐edge emission from ZnSe QDs is achieved. For glasses with copper doping, efficient energy transfer from ZnSe QDs to copper ions is observed, and efficient broad band emission from copper ions is realized at the expense of the band‐edge emission of ZnSe QDs. Absorption spectra, size‐dependent broad‐band emission spectra and electron spin resonance spectra show the cupric ions are doped into the ZnSe QDs. Results reported here shows that doping of transition‐metal ions into semiconductor QDs in glasses is promising for development of high efficient luminescent glasses.

Fine-tuning of Silica Coating Procedure for Preparation of Biocompatible and Bright Pbs/Sio2 Qds

.

Emission of CdSe quantum dots according to the capping ligands

Quantum dot nanocrystals have particular optical properties due to the quantum confinement effect and the surface effect. This study focuses on the effects of organic materials capping quantum dot on the emission properties of quantum dots. The quantum dots prepared by using 1-hexadecylamine in the synthesis show strong emission, while the quantum dots prepared by using tri-octylphosphine oxide exhibit a suppressed emission and an extra emission related with the surface energy traps. These organic materials cap the quantum dots and make the surface conditions of quantum dots different. TEM images and X-ray diffraction patterns reveal that 1-hexadecylamine constructs a layer on the surface of quantum dot during the synthesis and this surface passivation by a layer of 1-hexadecylamine reduces the surface energy traps. Differently from 1-hexadecylamine, tri-octylphosphine oxide dangles from the surface, which causes a poorly passivated surface. This generates the surface deep trap levels giving rise to a significant and broad emission in the lower energy regime. The optical mechanism is studied by measuring the emission spectra and the time-resolved spectra at various temperatures from 4 K to 300 K.

Effects of photo-neutralization on the emission properties of quantum dots.

In this paper we investigate the coherence properties of a quantum dot used as photon pair source, under two-photon resonant excitation in combination with an additional photo-neutralization laser. The photo-neutralization increases the efficiency of the excitation process and thus, the brightness of the source, by a factor of approximately 1.5 for biexciton-exciton pairs. This enhancement does not degrade the relevant coherences in the system; neither the single photon coherence time, nor the coherence of the excitation process.

Resonance fluorescence spectra from coherently driven quantum dots coupled to slow-light photonic crystal waveguides

Using a polaron master equation approach we investigate the resonance fluorescence spectra from coherently driven quantum dots (QDs) coupled to an acoustic phonon bath and a photonic crystal waveguide with a rich local density of photon states (LDOS). Resonance fluorescence spectra from QDs in semiconductor crystals are known to show strong signatures of electron-phonon interactions, but when coupled to a structured photonic reservoir, the QD emission properties are also determined by the frequency dependence of the LDOS of the photon reservoir. Here, we investigate the simultaneous role of coupled photon and phonon baths on the characteristic Mollow triplet spectra from a strongly driven QD. As an example structured photonic reservoir, we first study a photonic crystal coupled cavity waveguide, and find that photons and phonons have counter-interacting effects near the upper mode-edge of the coupled-cavity waveguide, thus establishing the importance of their separate roles in determining the emission spectra. The general theory is developed for arbitrary photonic reservoirs and is further applied to determine resonance the fluorescence spectra from a realistic, disordered W1 photonic crystal waveguide showing important photon-phonon interaction effects that are directly relevant to emerging experiments and theoretical proposals.

Effect of surface plasmon resonance in TiO2/Au thin films on the fluorescence of self-assembled CdTe QDs structure

The exceptional properties of localised surface plasmons (LSPs), such as local field enhancement and confinement effects, resonant behavior, make them ideal candidates to control the emission of luminescent nanoparticles. In the present work, we investigated the LSP effect on the steady-state and time-resolved emission properties of quantum dots (QDs) by organizing the dots into self-assembled dendrite structures deposited on plasmonic nanostructures. Self-assembled structures consisting of water-soluble CdTe mono-size QDs, were developed on the surface of co-sputtered TiO2 thin films doped with Au nanoparticles (NPs) annealed at different temperatures. Their steady-state fluorescence properties were probed by scanning the spatially resolved emission spectra and the energy transfer processes were investigated by the fluorescence lifetime imaging (FLIM) microscopy. Our results indicate that a resonant coupling between excitons confined in QDs and LSPs in Au NPs located beneath the self-assembled structure indeed takes place and results in (i) a shift of the ground state luminescence towards higher energies and onset of emission from excited states in QDs, and (ii) a decrease of the ground state exciton lifetime (fluorescence quenching).

Surface oxidation behaviors of Cd-rich CdSe quantum dot phosphors at high temperature.

The optical properties of quantum dots (QDs) are altered by exposure to air and light; upon such exposure, the quantum yield is typically reduced. Improved understanding of surface oxidation and oxide-layer behavior, both of which influence the photoluminescence of QDs, is necessary for advancing the use of QDs. In this study, the oxide layer properties of QDs are investigated. The QDs are synthesized and subsequently oxidized by heat treatment in atmospheric conditions, and the luminescence properties of the resultant QDs are investigated. The emission properties of QDs are characterized by photoluminescence. The composition and bonding structure of oxidized CdSe QDs are investigated by X-ray photoelectron spectroscopy (XPS). The XRD peaks of oxidized CdSe QDs match CdSe and CdO peaks. CdO is formed by partial oxidation of CdSe QDs. Transmission electron microscopy (TEM) image is confirmed morphology of oxidation before and after of CdSe QDs.

Emission properties of quantum dots in polymer optical fibres

CdSe/ZnS core-shell quantum dots have been embedded within microstructured polymer optical fibres. The emission properties of quantum dots within fibres have been explored to show that variation in concentration, sample length and pumping regimes effects the emission characteristics of these quantum dots.

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots.

Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots

ABSTRACTRecently, a simple method has been developed to obtain inverted GaAs/AlGaAs quantum dots (QDs) below a quantum well (QW) via multi-step (hierarchical) self-assembly [1]. Here we report on the optical characterization of a series of structures GaAs QDs with different size. The study is performed by means of reflectance (R) down to T=15 K, photo- and thermo-reflectance (T>80 K) and by spectroscopic ellipsometry (at RT). Such measurements allow us to check the thickness and composition of the barrier layers and to complete the study of the electronic states involved in the emission properties of QDs and QW levels. QW states were well identified and their energies and shift with the size parameters well agree with the photoluminescence (PL) data. The identification of QD states seems less straightforward in R measurements and deserves further investigation.