Electronic Phenomena Research Articles

Spin-orbit proximity in MoS2/bilayer graphene heterostructures

Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the interaction between bilayer graphene and transition metal dichalcogenides (TMDs) stands out due to its potential for inducing spin–orbit coupling (SOC) in graphene. Future devices concepts require the understanding of the precise nature of SOC in TMD/bilayer graphene heterostructures and its influence on electronic transport phenomena. Here, we experimentally confirm the presence of two distinct types of SOC – Ising (ΔI = 1.55 meV) and Rashba (ΔR = 2.5 meV) – in bilayer graphene when interfaced with molybdenum disulfide. Furthermore, we reveal a non-monotonic trend in conductivity with respect to the electric displacement field at charge neutrality. This phenomenon is ascribed to the existence of single-particle gaps induced by the Ising SOC, which can be closed by a critical displacement field. Our findings also unveil sharp peaks in the magnetoconductivity around the critical displacement field, challenging existing theoretical models.

Optical properties of CVD-grown multilayer graphene on nickel using spectroscopic ellipsometry

Incorporating graphene into relevant technologies requires its integration with commercially suitable substrates. Understanding the interactions between graphene and these substrates is crucial, as graphene serves as an ideal model system for investigating electronic phenomena. In this work, we report the optical properties of multilayer graphene on nickel substrates using spectroscopic ellipsometry. We provide information on the spectral dependence of optical properties of multilayer graphene, such as the complex dielectric constant, refractive index, and optical conductivity in the energy range of 1.6–5.0 eV. The optical conductivity profile obtained from SE analysis showed a symmetrical peak at 4.38 eV, suggesting an interband transition from the π to π∗ orbital at the M point. The graphene/Ni interaction generated changes in the number of available states below the Fermi level, leading to significant changes in electron density. Our result provides the information essential for understanding relevant research and developing graphene-based optoelectronic applications.

A THEORETICAL STUDY OF THE PHYSICAL PROPERTIES OF HEXAGONAL GALLIUM NITRATE USING DENSITY FUNCTIONAL THEORY

First-principles calculations based on density functional theory (DFT) have been used to investigate structural, electronic, optical and thermodynamic aspects of the α-GaN crystal. Based on local density approximations (LDA), Generalized gradient approximation (GGA) and meta-generalized gradient approximation (m-GGA) functional methods, the band gap energies of α-GaN crystals have been estimated as 1.962 eV, 2.069 eV and 2.354 eV. The band gap energies that are presented in these studies are in accordance with the ones from the other experimental and theoretical studies. Besides, our findings give us knowledge about the electronic and optical properties of α-GaN crystal. The band gap energies in the α-GaN crystal are the key factors that define its electrical and optical characteristics. They are the energy range in which the electrons can be exited from the valence band to the conduction band, which in turn affects the material's conductivity and the ability of the material to absorb and emit light. The approximate of our results with the previous researches indicates the reliability of our findings and thus increases our knowledge of α-GaN's electronic and optical phenomena. The orbital characteristics of the Ga and N atoms were found by simulating the density of state and the partial density of state for α-GaN. Besides the analysis of the band structure, density of states and optical properties of the compound we also included. The results show that α-GaN has a direct bandgap, which is at the G point in the Brillouin zone. This is the reason for its great potential for the development of optoelectronic devices. Also, we use the three approximations that are given earlier to find the optical characteristics (the absorption coefficient) of the compound. In addition to that, the thermodynamic properties that can be calculated like Debye temperature, enthalpy, free energy, entropy and heat capacity enable us to understand the thermal behavior of the compound better. The heat capacity of α-GaN is detected to be 17.3 Jmole-1K-1, with a Debye temperature of 824.6K. This research will offer a detailed interpretation of α- G-N, covering all its basic properties and the possible applications in optoelectronic and electronic devices. The results of this study are very important and the new technologies that will be developed based on the α-GaN research will be very beneficial.

X-ray spectromicroscopy of single NiO antiferromagnetic nanoparticles

The chemical and magnetic properties of NiO nanoparticles (NP) have been studied with single-particle sensitivity by means of synchrotron-based, polarization-dependent X-ray absorption spectroscopy using photoemission electron microscopy around the Ni L3,2 edges. Three samples of NP in a size range of 40-120 nm were synthesized by thermal decomposition and subsequent calcination processes. The analysis of the local X-ray absorption spectra of tens of individual NP indicates a strong dependence of their Ni oxidation state with the calcination protocol of each sample. Additional electron-microscopy-based images and spectra of a few individual NP as well as other standard macroscopic data are in very good agreement with these experimental findings. These results showcase the relevance of combining standard and advanced single-particle studies to gain further insight into the understanding and control of electronic and magnetic phenomena at the nanoscale.

3D-Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device.

Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide-bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantumtechnologies.

Single-Molecule Mechanoresistivity by Intermetallic Bonding.

The metal-electrode interface is key to unlocking emergent behaviour in all organic electrified systems, from battery technology to molecular electronics. In the latter, interfacial engineering has enabled efficient transport, higher device stability, and novel functionality. Mechanoresistivity - the change in electrical behaviour in response to a mechanical stimulus and a pathway to extremely sensitive force sensors - is amongst the most studied phenomena in molecular electronics, and the molecule-electrode interface plays a pivotal role in its emergence, reproducibility, and magnitude. In this contribution, we show that organometallic molecular wires incorporating a Pt(II) cation show mechanoresistive behaviour of exceptional magnitude, with conductance modulations of more than three orders of magnitude upon compression by as little as 1 nm. We synthesised series of cyclometalated Pt(II) molecular wires, and used scanning tunnelling microscopy - break junction techniques to characterise their electromechanical behaviour. Mechanoresistivity arises from an interaction between the Pt(II) cation and the Au electrode triggered by mechanical compression of the single-molecule device, and theoretical modelling confirms this hypothesis. Our study provides a new tool for the design of functional molecular wires by exploiting previously unreported ion-metal interactions in single-molecule devices, and develops a new framework for the development of mechanoresistive molecular junctions.

Spin-dependent electronic phenomena in heavily-doped monolayer graphene

The controlled manipulation of doping levels in graphene is crucial for advancing next-generation low-power electronics. Owing to its peculiar band structure, graphene's electronic functionalities can be easily tuned by electron doping, resulting in the bandgap openings, orbital hybridization, and induced spin-polarization. Here, we unveil the substantial doping of the graphene layer and the emergence of a significant bandgap by sandwiching a monolayer graphene, supported on ferromagnetic cobalt, between two europium layers. Our angle- and spin-resolved photoemission spectroscopy experiments, accompanied by dedicated density functional theory calculations, demonstrate that single-spin electron pockets form as a result of the hybridization of the topmost europium majority bands with graphene, while hybridization gaps are induced in the graphene π∗ bands by the Eu minority bands. Spin-resolved measurements further emphasize a single-spin dispersionless contribution proximal to the Fermi level, possibly arising from the coupling of single-spin polarized graphene bands to optical phonons. This work provides crucial insights into the phase diagram of heavily doped graphene, with significant potential for the design and development of novel 2D systems.

Magnetic coupled electronic landscape in bilayer-distorted titanium-based kagome metals

Quantum materials whose atoms are arranged on a lattice of corner-sharing triangles, i.e., the kagome lattice, have recently emerged as a captivating platform for investigating exotic correlated and topological electronic phenomena. Here, we combine ultralow temperature angle-resolved photoemission spectroscopy (ARPES) with scanning tunneling microscopy and density functional theory calculations to reveal the fascinating electronic structure of the bilayer-distorted kagome material LnTi3Bi4, where stands for Nd and Yb. Distinct from other kagome materials, LnTi3Bi4 exhibits twofold, rather than sixfold, symmetries, stemming from the distorted kagome lattice, which leads to a unique electronic structure. Combining experiment and theory we map out the electronic structure and discover double flat bands as well as multiple Van Hove singularities (VHSs), with one VHS exhibiting higher-order characteristics near the Fermi level. Notably, in the magnetic version NdTi3Bi4, the ultralow base temperature ARPES measurements unveil an unconventional band splitting in the band dispersions which is induced by the ferromagnetic ordering. These findings reveal the potential of bilayer-distorted kagome metals LnTi3Bi4 as a promising platform for exploring novel emergent phases of matter at the intersection of strong correlation and magnetism. Published by the American Physical Society 2024

Green synthesis of copper nanoparticles from Terminalia arjuna (L.) bark extract: Characterization and potential for mercury degradation

The focus of this study is on synthesizing copper nanoparticles through a green approach, utilizing Terminalia arjuna bark extract. The ultra violet (UV) spectral analysis of copper nanoparticles synthesized through environmentally friendly methods revealed distinct absorption peaks at 287 nm, 575 nm, and 898 nm, indicative of significant light absorption. These peaks elucidate the nanoparticles' optical characteristics, shedding light on electronic transitions and surface plasmon resonance phenomena. Fourier transform infrared spectroscopy (FTIR) analysis displayed various peaks, suggesting vibrations associated with copper nanoparticles and functional groups in T. arjuna bark extract. The X-ray diffraction analysis (XRD) data exhibited characteristic peaks corresponding to metallic copper's crystallographic planes, confirming the formation of highly crystalline copper nanoparticles. Atomic force microscopy results depicted surface morphology and particle size distribution. Copper nanoparticles show promise in mercury degradation due to their high surface area and catalytic activity. They interact effectively with mercury ions through adsorption, reduction, and oxidation processes, leading to sequestration or transformation into less toxic forms. Functionalization enhances their affinity towards mercury, while synergies with other nanomaterials boost efficiency. Green synthesized copper nanoparticles offer an eco-friendly solution for effective mercury remediation, promising advancements in sustainable nanotechnological approaches for global environmental sustainability. KEY WORDS: Mercury, Copper, Terminalia arjuna, Remediation Bull. Chem. Soc. Ethiop. 2024, 38(6), 1703-1713. DOI: https://dx.doi.org/10.4314/bcse.v38i6.16

The Effect of Relative Humidity in Conductive Atomic Force Microscopy.

Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field of CAFM is collected in air at a relative humidity (RH) of 30-60%. However, the effect of RH in CAFM remains unclear becauseprevious studies often made contradictory claims, plus the number of samples and locations tested is scarce. Moreover, previous studies on this topic didnot apply current limitations, which can degrade the CAFM tips and generate false data. This article systematically analyzes the effect of RH in CAFM by applying ramped voltage stresses at over 17,000 locations on ten different samples (insulating, semiconducting, and conducting) under seven different RH. An ultra-reliable setup with a 110-pA current limitation during electrical stresses is employed, andexcellent CAFM tip integrity after thousands of tests is demonstrated. It is found that higher RH results in increased currents due to the presence of a conductivewater meniscus at the tip/sample junction, which increases the effective area forelectron flow. This trend is observed in insulators and ultra-thin semiconductors; however, in thicker semiconductors the electron mean free path is high enough to mask this effect. Metallic samples show no dependence on RH. This study clarifies the effect of relative humidity in CAFM, enhances understanding of the technique, and teaches researchers how to improve the reliability of their studies in this field.

Field‐Induced Butterfly‐Like Anisotropic Magnetoresistance in a Kagome Semimetal Co3In2S2

AbstractWith the interplay between magnetism and topological bands, magnetic kagome semimetals provide promising platforms for exploring exotic correlated electronic states and quantum phenomena such as anomalous Hall effect, quantum spin liquid, and unconventional magnetoresistance, as well as driving advances in electronic and spintronic applications. Here, a field‐induced butterfly‐like anomalous anisotropic magnetoresistance (AMR) effect in an intriguing kagome semimetal Co3In2S2 is reported. The kagome‐lattice Co3In2S2 single crystals are synthesized via a polycrystal‐source chemical vapor transport approach, possessing a high carrier mobility reaching 104 cm2V−1s−1. The Co3In2S2 single crystal exhibits a canted antiferromagnetic state below 5 K, but intriguingly, it is easily transformed into a ferromagnetic state under a small external magnetic field. Furthermore, the planar Hall effect (PHE) is detected, stemming from the complex contribution of field‐induced ferromagnetism and orbital magnetoresistance. Remarkably, as the magnetic field increases, the low‐temperature magnetoresistance behavior of the Co3In2S2 reveals a butterfly‐like AMR effect with a maximum value of 850%, exhibiting a superposition of the two‐, four‐, and six‐fold AMR terms. Band structure calculations suggest that such a field‐induced butterfly‐like AMR effect may originate from the modulations of the electronic structure near the Fermi level by the magnetic moment. The findings offer a valuable platform for understanding the anomalous AMR effect and for the development of advanced spintronic devices.

Extremely Large Anomalous Hall Conductivity and Unusual Axial Diamagnetism in a Quasi-1D Dirac Material La3MgBi5.

Anomalous Hall effect (AHE), one of the most important electronic transport phenomena, generally appears in ferromagnetic materials but is rare in materials without magnetic elements. Here, a study of La3MgBi5 is presented, whose band structure carries multitype Dirac fermions. Although magnetic elements are absent in La3MgBi5, the signals of AHE can be observed. In particular, the anomalous Hall conductivity is extremely large, reaching 42,356 Ω-1 cm-1 with an anomalous Hall angle of 8.8%, the largest one that has been observed in the current AHE systems. The AHE is suggested to originate from the combination of skew scattering and Berry curvature. Another unique property discovered in La3MgBi5 is the axial diamagnetism. The diamagnetism is significantly enhanced and dominates the magnetization in the axial directions, which is the result of the restricted motion of the Dirac fermion at the Fermi level. These findings not only establish La3MgBi5 as a suitable platform to study AHE and quantum transport but also indicate the great potential of 315-type Bi-based materials for exploring novel physicalproperties.

Controlled electrodeposition of cobalt nanowires usingiRcompensation and their electron transport properties.

Superconducting hybrid structures based on single nanowires are a new type of nanoscale devices with peculiar transport characteristics. Control over the nanowire structure is essential for understanding hybrid electronic phenomena arising in such complex systems. In this work, we report a technique for the fabrication of cobalt nanowires by template-assisted electrodeposition usingiRcompensation, which allows revealing the fundamental dependence of the preferred direction of nanowire growth on the deposition potential. Long coarse-grained cobalt nanowires with a diameter of 70 nm have been implemented into Nb/Co/Nb hybrid structures. We demonstrate that using electrode fabrication techniques that do not contaminate the surface of the nanowire leads to a high quality of devices with low-resistance interfaces. Low-temperature resistivity of 4.94 ± 0.83µΩ cm and other transport characteristics of Co nanowires are reported. The absence of long-range superconducting proximity effect for Nb/Co/Nb systems with different nanowire length is discussed.

Mixed-Metal Alloying in Hybrid Bronzes.

We show that substitutional alloying during the aqueous self-assembly of layered organic-templated metal oxides produces single-phase mixed-metal hybrids. Single-crystal X-ray diffraction, bulk elemental analyses, and vibrational and electronic spectroscopies corroborate a solid solution of Mo and W atoms at lattice sites within the two-dimensional metal oxide layers. Mild postsynthetic reduction then introduces relatively delocalized electrons to afford mixed-metal hybrid bronzes. To our knowledge, this represents the first demonstration of mixed-metal alloying in a hybrid metal oxide and a rare example of solid-solution formation at low temperature. We show this approach yields mixed-metal congeners with optical band gaps over 130 meV smaller than those of single-metal analogs, while achieving activation energies (Ea) of conduction as low as 78.4(2) meV. Further, metal substitution appears to tune collective electronic phenomena by suppressing the non-Arrhenius behavior observed for Mo-based hybrids. This work considerably expands the nascent hybrid bronze platform to help address energy-related challenges and fundamental solid-state physical questions.

Single Atom Platforms on Surfaces: A Step Towards Future Catalysts

Single (metal) atoms (SAs) have attracted great attention in virtue of their intriguing physical and chemical properties, representing a fertile playground for fundamental studies of electronic, magnetic and chemical phenomena. Placing SAs on clean, crystalline and atomically flat substrates allows the study of their properties and functions via the whole plethora of surface science tools, offering direct access to their features with ultimate resolution. Moreover, the isolated metal atoms exhibit peculiar properties and tend to behave similarly to reactive centres in solution or gas phase, bridging homogeneous and heterogeneous catalysis. In these regards, atomically dispersed metal catalysts (ADCs) have recently received great attention [1, 2]. However, they suffer some intrinsic bottlenecks such as a poor tunability and limited maximum density.Here we show the successful achievement of single atom platforms (SAPs), where SAs are coordinated to atomically precise organic templates, confined to a two dimensional surface. The templates are obtained via the on-surface synthesis (OSS) of carefully designed molecular precursors, and consist of carbon-based, covalent polymers equipped with side moieties that act as coordination sites. These groups capture metal atoms that are deposited on the substrate in a post-synthetic step, and together form active site with rich potential applications. Conceptually, the obtained SAP offers rich tunability prospects by varying not only the substrate and the SA, but also the organic ligand. Its shape and composition (e.g. heteroatoms, functional groups, strain, etc.) will influence the properties of the SA and enable their fine tuning. Moreover, the versatility of the OSS strategy offers a wide plethora of possible architectures, allowing also the precise modification of the SA density.We have characterized each stage of the SAP preparation via high-resolution scanning tunnelling microscopy (STM) and noncontact atomic force microscopy (nc-AFM) with functionalized tips [3]. The trapping and conversion ability of these well-defined active sites towards CO and CO2 was then studied. Our investigation allows the direct visualization of reactants and binding motifs with unprecedented resolution, and opens new avenues for the study of chemical reactions localized at the active sites of our SAP.[1] Wang, A.; Li, J.; Zhang, T. Heterogeneous Single-Atom Catalysis. Nature Reviews Chemistry 2018, 2 (6), 65–81.[2] Hannagan, R. T.; Giannakakis, G.; Flytzani-Stephanopoulos, M.; Sykes, E. C. H. Single-Atom Alloy Catalysis. Chem. Rev. 2020, 120 (21), 12044–12088.[3] Gross, L.; Mohn, F.; Moll, N.; Liljeroth, P.; Meyer, G. The Chemical Structure of a Molecule Resolved by Atomic Force Microscopy. Science 2009, 325 (5944), 1110–1114. Figure 1. Single atom platform concept. Sketch of surface-adsorbed single atoms (orange dots) and of a single atom platform. Here, the organic part is represented by 1D polymers adsorbed on a surface, and the single atoms decorate the coordination sites (U-shaped motifs). Figure 1

Diamond/graphene (carbon sp3-sp2) heterojunctions for neuromorphic device applications

Diamond/graphene (carbon sp3-sp2) interfaces exhibit various interesting and potentially useful electronic phenomena. The present work demonstrates the possibility of obtaining novel neuromorphic photodevices using such junctions. Junctions were found to show different photoconductivity relaxation behavior depending on their growth conditions such that various optoelectronic properties were observed. In particular, interfaces exhibiting shorter relaxation times could be used to construct image recognition devices mimicking short-term memory functions of the human brain. Using these devices, images of the hand-written numerals 0 through 9 could be optoelectronically recognized with an accuracy on the order of 80%, demonstrating both photo-detection and processing functions in a single device. These results suggest that novel image processing devices could be produced using graphene/diamond heterojunctions.Graphical

Large-Scale Direct Growth of Monolayer MoS2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits.

Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.

Efficient exact exchange using Wannier functions and other related developments in planewave-pseudopotential implementation of RT-TDDFT.

The plane-wave pseudopotential (PW-PP) formalism is widely used for the first-principles electronic structure calculation of extended periodic systems. The PW-PP approach has also been adapted for real-time time-dependent density functional theory (RT-TDDFT) to investigate time-dependent electronic dynamical phenomena. In this work, we detail recent advances in the PW-PP formalism for RT-TDDFT, particularly how maximally localized Wannier functions (MLWFs) are used to accelerate simulations using the exact exchange. We also discuss several related developments, including an anti-Hermitian correction for the time-dependent MLWFs (TD-MLWFs) when a time-dependent electric field is applied, the refinement procedure for TD-MLWFs, comparison of the velocity and length gauge approaches for applying an electric field, and elimination of long-range electrostatic interaction, as well as usage of a complex absorbing potential for modeling isolated systems when using the PW-PP formalism.

Passive harmonic mode-locking in Tm–Ho doped fiber laser with MoS2–ZnO saturable absorber deposited on the arc-shaped fiber

This work reports a harmonic mode-locked Tm–Ho doped fiber laser (THDFL) using newly fabricated MoS2–ZnO as a saturable absorber (SA). It generates harmonic mode-locking (HML) operation with a center wavelength of 1911.4 nm and a 3-dB bandwidth of 3.02 nm. The fundamental repetition rate and pulse width were 14.1 MHz and 2.05 ps, respectively. Based on the radio frequency (RF) spectrum, the observed signal-to-noise (SNR) of the fundamental HML pulse was 67.22 dB. Increasing the pump power with fine-tuning of the polarisation controller (PC), higher order HML pulses were also observed using the MoS2–ZnO SA. The highest stable HML frequency was 300 MHz, observed at the 21st HML. The central wavelength and 3-dB bandwidth of the HML pulse were 1915.2 nm and 2.29 nm, respectively. The 21st HML pulses demonstrated a SNR of 40.09 dB. No supermode noise was observed in the RF spectrum, indicating that the 21st HML pulses were relatively stable. With industry demand, this high repetition rate HML with MoS2–ZnO SA opens new avenues for comprehension and manipulation of electronic phenomena, paving the way for future innovations in ultrafast lasers.

Phonon-mediated spin transport in quantum paraelectric metals

The concept of ferroelectricity is now often extended to include continuous inversion symmetry-breaking transitions in various metals and doped semiconductors. Paraelectric metals near ferroelectric quantum criticality, which we term ‘quantum paraelectric metals,’ possess soft transverse optical phonons which can have Rashba-type coupling to itinerant electrons in the presence of spin-orbit coupling. We find through the Kubo formula calculation that such Rashba electron-phonon coupling has a profound impact on electron spin transport. While the spin Hall effect arising from non-trivial electronic band structures has been studied extensively, we find here the presence of the Rashba electron-phonon coupling can give rise to spin current, including spin Hall current, in response to an inhomogeneous electric field even with a completely trivial band structure. Furthermore, this spin conductivity displays unconventional characteristics, such as quadrupolar symmetry associated with the wave vector of the electric field and a thermal activation behavior characterized by scaling laws dependent on the phonon frequency to temperature ratio. These findings shed light on exotic electronic transport phenomena originating from ferroelectric quantum criticality, highlighting the intricate interplay of charge and spin degrees of freedom.