Electronic Optical Properties Research Articles

The electronic structures and optical properties induced by spin-orbit-coupling in LiPbPO4 compound

Phosphate materials are excellent candidates for nonlinear optical materials, thus necessitating a comprehensive and in-depth study of them. Here, inspired by the interesting phenomenon induced by the spin-orbit coupling (SOC) effect, we extend it to LiPbPO4 compounds using a first-principles approach to probe the influence of SOC on the electronic structure and optical properties of post-transition metal compounds. The results show that only the bottom of the conduction band shows an energy level splitting with the inclusion of SOC, which is analyzed to come from the SOC in the Pb 6p state since the SOC in the O 2p state is very weak. The splitting of the conduction band triggers the decrease of the band gap and the change of the optical properties. The performance analysis shows that both the refractive index and the second harmonic generation (SHG) coefficient are enhanced with the inclusion of SOC, however, the change in the birefringence is insignificant, and it is further found that the enhanced SHG coefficient values are closer to the experimental values. In conclusion, our study reveals the impact of SOC effect on the electronic structure and optical properties of LiPbPO4 compounds, contributing to a deeper understanding of the nonlinear optical in post-transition metal compounds.

A Quantum Chemical Study on the Bonding Mechanism, Electronic Structure, and Optical Properties of Cellulose and Polyaniline Nanohybrid

This study provides accounts of the bonding character, electronic structure, and optical properties of the cellulose–polyaniline hybrid complex using principles of quantum mechanics. The calculations revealed cellulose and polyaniline binding energy per unit ranged from -0.52 eV to -0.68 eV. The electron localization function of the complex revealed that there was no value at the interface but deformed basins, indicating a physisorption type of interaction. The highest occupied molecular orbitals and lowest molecular orbitals are mainly dominated by the polyaniline, with minor hybridization of the orbitals of the cellulose in all configurations. These results indicate that the bonding between cellulose and polyaniline is characterized as an unshared electron interaction. Generally, the density of states of the cellulose and polyaniline complex can be considered a superposition of the states of isolated subsystems—the bandgap of the complex ranges from 2.30 eV to 2.87 eV. The lowest bandgap is observed when the prototype polyaniline is placed near the cellulose hydroxy and hydroxymethyl group. Further, the optical absorption spectra are calculated using time-dependent density functional theory. The results indicate that the prominent peak of the prototype polyaniline at 3.59 eV (345.36 nm) is suppressed at the complex. Meanwhile, in the higher energy region, the optical absorption spectra can be considered a superposition of the absorption spectra of the isolated constituents. The results presented here provide new information on the cellulose–polyaniline complex's bonding mechanism and give the resulting electronic–optical properties. The results will be helpful in the development of innovative biomaterials, fibers, and multifunctional composites based on cellulose and polyaniline.

Strain modulated optical properties of MoSi2P4 monolayer – insights from DFT

Strain plays a very important role in tuning the properties of the materials for the desired applications. In the present work, we have investigated the variation of strain on the electronic and optical properties of a recently synthesized class of compound MoSi2P4 monolayer using the first principle methods. The MoSi2P4 monolayer is found to be dynamically and thermally stable at room temperature. The electronic structure of studied monolayer indicates a direct bandgap (at K-point) of 0.685 eV and 1.177 eV using the PBE and HSE06 hybrid functionals, respectively. To tune the electronic bandgap and optical properties, mechanical strain was applied (up to ±10%). A high optical absorption coefficient of the order of 105 cm−1 is observed. The absorption starts in the infrared and visible region covering a large part in the ultraviolet region. The absorption coefficient is found to decrease (increase) under tensile (compressive) strain. Our study indicates the potential application of MoSi2P4 monolayer in flexible optoelectronic devices for absorption and detection in the infrared, visible and ultraviolet region.

First-principles calculations of electronic, optical and thermoelectric properties of the Ge2SeS/GeSe van der Waals heterostructure

In this research, we systematically investigate the electronic structure, optical and thermoelectric properties of the Ge2SeS/GeSe van der Waals (vdW) heterostructure in comparison to the Ge2SeS and GeSe monolayers by using density functional theory (DFT) implemented in Quantum ESPRESSO. We have constructed two configurations of the Ge2SeS/GeSe heterostructure by stacking the Ge2SeS monolayer on top of the GeSe monolayer (Stacking A1 and A2). According to our calculations, the calculated indirect electronic band gaps of both Stacking A1 and Stacking A2 are Eg = 0.80 eV and 0.88 eV, respectively. The transfer of charges from the Ge2SeS to the GeSe monolayer for both configurations has been predicted. By Bader charge analysis, the charge transfers for Stacking A1 and A2 are approximately 0.013 e and 0.020 e, respectively. The coefficient of absorption for the Ge2SeS/GeSe heterostructure is higher than that for Ge2SeS and GeSe monolayers in both regions of the spectrum (visible, and UV). Moreover, the Ge2SeS/GeSe heterostructure has a very good absorbing capability of light in the visible region up to 85 × 104 cm−1. Our calculations yielded a high thermoelectrical electronic figure of merit (ZTe) of 12.64 and 2.27 for Stacking A1 and A2, respectively. As a result, our findings show that the Ge2SeS/GeSe heterostructure is a promising material for thermoelectric and optoelectronic applications.

Synthesis, characterization, DFT calculations, and anticancer properties of VI-period and f-block elements-substituted zinc oxide nanopowders

Nanotechnology provides promising ways in which a wide range of new materials can be manufactured which appear to have enormous potential in the field of biomedicine and life sciences. ZnO can be applied in many physical and optical processes and used as a good anti-cancer agent. ZnO NPs are recognized as SAFE or GRAS, non-toxic and biocompatible particles. In this study, wurtzite ZnO samples co-doped by rare earth elements (Tb, Er) were prepared via sol-gel auto-combustion route and their crystallographic structure as well as their morphologies were examined using XRD and TEM techniques. The analysis disclosed that all synthesized products crystallized in a hexagonal structure and the crystallites/particles size diminished with the increase of co-doping content. The electronic structure and optical properties of the different products were assessed using DFT calculations. Doping Tb and Er rare earth elements into ZnO has a significant effect on its optoelectronic properties. The computational study showed that the co-doping of Tb and Er on pure ZnO decreased the band gap and increased the refractive index. The extinction spectrum of pristine ZnO showed a peak in the ultraviolet region at 5 eV, while those of the co-doped ZnO samples displayed stronger peaks in the infrared region (near 0.4 eV). The anticancer properties of Tb/Er co-doped ZnO nanoparticles were examined on cervical cancer (HeLa cells) and colon cancer (HCT-116) by using an in vitro MTT assay. The cell viability assay findings indicated a reduction in HeLa and HCT-116 cells after 48 hours of treatment of the synthesized samples. The treatment with co-doped ZnO nanoparticles produced chromatin condensation and formation of apoptotic bodies in HCT-166 cells, which indicates that the prepared co-doped ZnO nanoparticles induced programmed cell death in HCT-116 cells. According to these results, it can be concluded that the prepared Tb/Er co-doped ZnO nanoparticles have promising applications in developing new optoelectronic devices and also in treating cervical and colon cancers.

Predictive modeling of novel GaAgX2 (X = S, Se) chalcogenides: First-principles study of electronic, optical, and thermoelectric properties

The most prominent aspects of ternary-type chalcogenides are their tunable optical abilities and outstanding thermoelectric stability. Here the advanced density functional theory is used to examine the complicated interaction of the electronic structure, optical, thermodynamic, and thermoelectric properties of novel GaAgX2 (X = S, Se) chalcogenides. The total energies vs volume of the two materials were computed to formulate ground state characteristics. Both the materials confirmed to have direct band gap nature with an energy gap of 0.8 eV, and 2.2 eV, using TB-mBJ potential, respectively. As compared to GaAgS2, the crystal structure of GaAgSe2 have more covalent bonds that enlarged the covalency and results in wider energy gap of GaAgSe2 as compared to GaAgS2. For the negative value of ε1(ω), these materials display metallic nature, resulting to show a total reflection of the incoming photons. The GaAgS2 displays better absorption than GaAgSe2 materials with higher energy photons. With a few high peaks of refractive index in (2.8–5.5) eV energy range, suggesting these materials appropriate to be used in optical devices. These materials have positive Seebeck coefficients and are confirmed to have a p-type nature. At ambient temperature, GaAgS2 has lower thermal conductivity than GaAgSe2.

The influence of point defects on the electronic structures and optical properties of 3C-SiC

Using first-principles calculations, we studied the formation energy of point defects in cubic silicon carbide (3C-SiC) and the influences of defects on its electronic band structure, density of states, and optical properties. We found that the formation energy of the interstitial defect is greater than that of the vacancy and antisite defect, with the Si interstitial defect having the highest formation energy. The electronic band structure and density of states have no bandgap due to the vacancy defect, interstitial defect, and Si antisite defect (Si atom occupies the position of C atom), while the changes due to the C antisite defect (C atom occupies the position of Si atom) are not significant. Depending on the type of defect, the optical properties change differently, with the vacancy defect having the most significant impact on the optical properties. The vacancy defect notably increases the optical conductivity, dielectric function, reflectivity, extinction coefficient, and refractive index in the low-energy region, indicating the potential application of 3C-SiC in the field of optoelectronic devices.

Tunability of 2D Graphene/H-diamane heterostructure under external electric field and strain engineering

Heterostructures have various physical and chemical properties compared to single-layer two-dimensional materials (2DMs), providing an effective method for improving optoelectronic device's performance. ln this work, we systematically examined the electronic structures, contact types, and optical properties of the Graphene/H-diamane heterostructure (Gr/H-diamane HTS) made of Gr and 2D H-diamane by the first-principles method. This HTS displays a p-type Schottky contact with a Schottky barrier height (SBH) of 0.01 eV. The SBH can be effectively tuned by applying electric field (EF) and strain engineering, and the transition from Schottky contact to Ohmic contact can be realized under vertical strain or external EF, which contributes to the improvement of device performance. In addition, the Gr/H-diamane HTS has a work function difference of 0.61 eV and a strong absorption capacity for infrared, visible, and ultraviolet light. Its peak absorption coefficient in the infrared region reaches 4 × 106 cm-1 and can be improved even further under EF. Therefore, the Gr/H-diamane HTS has enormous potential in applications including high-performance nanoelectronics and infrared photodetectors.

Dual-Emission Origins in Bi3+-Doped M2O3 Sesquioxides (M = Sc, Y, Gd and Lu): A First-Principles Study.

Bi3+-doped sesquioxides exhibit dual emissions, marked by distinct Stokes shift and bandwidth, meaning unraveling their underlying origins is particularly intriguing. In this study, we employ first-principles calculations to investigate the luminescence mechanisms within the M2O3:Bi3+ (M = Sc, Y, Gd, Lu) series, with the goal of addressing the posed inquiry. Our investigation commences with the analysis of the site occupancy and charge state of bismuth ions in the two cationic sites through formation energy calculations. Additionally, we examine the local coordination environments for various excited states of Bi3+ dopants, including the 3P0,1 state and two types of charge transfer states, by evaluating their equilibrium geometric structures. The utilization of the hybrid functional enables us to obtain results of electronic structures and optical properties comparable with experiments. Importantly, the calculated energies for the 6s-6p transitions of Bi3+ dopants in the M2O3 series align well with the observed dual-emission energies. This alignment challenges the conventional spectroscopic sense that emission bands with large Stokes shifts can be exclusively ascribed to charge transfer transitions. Consequently, the integration of experimental and theoretical approaches emerges as the optimal strategy for designing novel Bi3+-doped phosphors.

Theoretical study of the boron-nitrogen (B-N) effects on electronic, optoelectronic, linear, and nonlinear optical properties of cyclo[2N]carbon series

Theoretical study of the boron-nitrogen (B-N) effects on electronic, optoelectronic, linear, and nonlinear optical properties of cyclo[2N]carbon series

Electronic and Nonlinear Optical Properties of B(III)-Submonoazaporphyrin-π-Diimide Compounds: A Density Functional Theory Study.

Three hypothetical complexes were designed using diimides (PMDI, NTCDI, and PTCDI) as the acceptor unit and B(III)-submonoazaporphyrin (1) as the donor unit. These complexes have smaller HOMO-LUMO energy gaps (3.39-3.96 eV) than pristine 1 (6.61 eV). Further, the energy gap can be tuned by changing the number of benzene rings of these diimides. Remarkably, these proposed complexes possess considerable first hyperpolarizabilities (β0) (4865-6921 a.u.), and the regularity of the β0 values remained the same in the gas phase and toluene solvent conditions. There is an inverse relationship between the energy gap and the polarizability/first hyperpolarizability. In addition, absorption spectra, frontier molecular orbitals, and hole electron distributions were obtained using time-dependent density functional theory calculations to emphasize the relationship between structure and properties. Ultraviolet-Visible absorption spectra reveals that all complexes show satisfying IR working regions. Further analysis of the first hyperpolarizability density reveals the nature of the excellent NLO properties of the studied systems. This study can provide valuable insights for the development of potential high-performance NLO molecules.

Adsorption of Zn atoms by monolayer WS2 doped with different atoms X (X = O, Se, N, P, F, Cl): first principles study.

The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (Tw) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS2, N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of - 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200-300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency. In this paper, the structure optimization of X (X = O, Se, N, P, F, Cl) doping on WS2 adsorbed Zn atom model is performed based on the CASTEP module in Materials-Studio software under the first principles using GGA and PBE generalized function. The corresponding binding energies, bond lengths, bond angles, charge densities, energy band structures, densities of states, and optical properties were also analyzed. The Monkhorst-Pack particular K-point sampling method is used in the calculations; the K-point grid is 6 × 6 × 1, and the cutoff energy for the plane wave expansion is 500 eV. After geometric optimization, the iterative accuracy converges to a value of less than 1 × 10-5 eV/atom for the total energy of each atom and less than 0.03 eV/Å for all atomic forces. The thickness of the vacuum layer was set to 20 Å to avoid the effect of interlayer interaction forces. In this paper, 27 atoms were used to form a 3 × 3 × 1 supercellular tungsten disulfide system consisting of 18 S atoms and 9 W atoms.

Electronic structure and optical properties of nitrogen-doped antimonene under biaxial strain: first-principles study.

In this thesis, the role of N atom doping and biaxial strain in modulating the electronic structure and optical properties of antimonene has been deeply investigated using a first-principles approach based on density-functional theory. The results show that N doping significantly reduces the band gap of antimonene and introduces new electronic states, thus affecting its electronic structure. In terms of optical properties, N doping reduces the static permittivity of antimonene and alters its absorption, reflection, and energy loss properties. In addition, biaxial strain further enhanced the modulation effect of these properties. This study not only provides theoretical support for the application of antimonene in the field of high-performance two-dimensional electronic and optoelectronic devices, but also reveals strain and doping as an effective means to modulate the physical properties of two-dimensional materials. For the calculations, we used the DFT-based CASTEP software package for the simulation of the electronic structure. In order to more accurately characterize the weak interactions between two-dimensional materials, we specifically introduced the Van der Waals dispersion correction. We have chosen the Perdew-Burke-Ernzerhof (PBE) exchange-correlation generalization under the generalized gradient approximation (GGA) and combined it with the Van der Waals correction term in order to fully consider the electronic structure of antimonene. For the calculation parameter settings, we set the truncation energy to 400 eV to ensure the accuracy of the calculation. Meanwhile, we adopt a 6 × 6 × 1 k-point grid for Brillouin zone sampling to obtain more accurate energy band structure and density of states information. For the convergence settings, the convergence criteria for both the system energy and the interaction force between atoms were set to 1 × 10-5 eV and 0.01 eV/Å, respectively. We selected a 3 × 3 × 1 supercell model with 18 Sb atoms. A vacuum thickness of 18 Å was established in the Z direction, which is sufficient to avoid interactions between the two atomic layers above and below the periodic structure.

Design and Optimization of High-Performance Novel RbPbBr3-Based Solar Cells with Wide-Band-Gap S-Chalcogenide Electron Transport Layers (ETLs).

Inorganic cubic rubidium-lead-halide perovskites have attracted considerable attention owing to their structural, electronic, and unique optical properties. In this study, novel rubidium-lead-bromide (RbPbBr3)-based hybrid perovskite solar cells (HPSCs) with several high-band-gap chalcogenide electron transport layers (ETLs) of In2S3, WS2, and SnS2 were studied by density functional theory (DFT) and using the SCAPS-1D simulator. Initially, the band gap and optical performance were computed using DFT, and these results were utilized for the first time in the SCAPS-1D simulator. Furthermore, the impact of different major influencing parameters, that is, the thickness of the layer, bulk defect density, doping concentration, and defect density of interfaces, including the working temperature, were also investigated and unveiled. Further, a study on an optimized device with the most potential ETL (SnS2) layer was performed systematically. Finally, a comparative study of different reported heterostructures was performed to explore the benchmark of the most recent efficient RbPbBr3-based photovoltaics. The highest power conversion efficiency (PCE) was 29.75% for the SnS2 ETL with Voc of 0.9789 V, Jsc of 34.57863 mA cm-2, and fill factor (FF) of 87.91%, while the PCEs of 21.15 and 24.57% were obtained for In2S3 and WS2 ETLs, respectively. The electron-hole generation, recombination rates, and quantum efficiency (QE) characteristics were also investigated in detail. Thus, the SnS2 ETL shows strong potential for use in RbPbBr3-based hybrid perovskite high-performance photovoltaic devices.

Excellent visible light absorption and ultra-high photoelectric conversion efficiency of two-dimensional (MoSe2)x(MoSTe)1-x mosaic heterostructures

Solar cells are a promising and potentially sustainable energy technology due to their cost-effectiveness, eco-friendliness, and capacity for integration into pliable apparatuses. Developing new photovoltaic materials to achieve higher photovoltaic conversion efficiency is a hot topic in the field of solar cells. In this work, the electronic structures and optical properties of two-dimensional (MoSe2)x(MoSTe)1-x mosaic heterostructures have been studied by density functional theory. Our results show that the mosaic heterostructures retain semiconductors with tunable band gap of 1.14–1.53 eV. With the augmentation of MoSe2 concentration in the mosaic heterostructures, the band gap of the materials has gradually increased. Besides, the mosaic heterostructures exhibit excellent optical absorption in the visible light region. Furthermore, the maximum theoretical photoelectric conversion efficiency of (MoSe2)0.80(MoSTe)0.20 mosaic heterostructure can reach 32.36 %. The tunable band gap, excellent light absorption, and ultra-high photoelectric conversion efficiency of (MoSe2)x(MoSTe)1-x mosaic heterostructures make them candidates for new nanocrystalline thin-film solar cells.

Strain tunable optical and transport properties of intrinsic ferromagnetic semiconductor CrOCl monolayer

Based on density functional theory, the electronic structure, transport, and optical properties of monolayer CrOCl are studied theoretically. The electronic structure analysis shows that monolayer CrOCl is a ferromagnetic semiconductor with an indirect band gap of 2.45 eV, and the electronic properties of monolayer CrOCl can be changed significantly by applying external strain. When 12 % uniaxial tensile strain is applied along the a-axis, the band gap of monolayer CrOCl decreases to 1.94 eV, the hole mobility can reach 1520.11 cm2 V−1·s−1, and the mobility difference between holes and electrons increase to 1471.53 cm2 V−1·s−1. Furthermore, the applied strain, regardless of tensile or compressive, can cause the redshift of the optical absorption peak of monolayer CrOCl, thereby improving the absorption performance in the visible light region. In addition, it was found that the in-plane absorption of bilayer CrOCl increased to nearly twice as compared with the monolayer one. These results indicate that single and few layers of CrOCl have the potential application prospect in the field of optoelectronic devices.

Effect of compressive strain on electronic and optical properties of Cr-doped monolayer WS2.

The electronic properties and optical properties of Cr-doped monolayer WS2 under uniaxial compressive deformation have been investigated based on density functional theory. In terms of electronic structure properties, both intrinsic and doped system bandgaps decrease with the increase of compression deformation, and the values of the bandgap under the same compression deformation after Cr doping are reduced compared with the corresponding intrinsic states. When the compressive deformation reaches 10%, both the intrinsic and doped system band gaps are close to zero. New electronic states and impurity energy levels appear in the WS2 system when doped with Cr atoms. For the optical properties, the calculation and analysis of the dielectric function under each deformation regime of monolayer WS2 show that the compression deformation affects the dielectric function, and when the compression deformation is 10%, the un-doped and Cr-doped regimes show a decrease in ε1(ω) compared to the compression deformation of 8%. For each deformation system, the peak reflections occur in the ultraviolet region. Near the position where the second peak of the absorption spectrum appears, it can be seen that the ability of each system to absorb light gradually decreases with the increase of the amount of deformation and appears to be red-shifted to varying degrees. This study follows the initial principles of the density functional theory framework and is based on the CASTEP module of Materials-Studio software GGA and PBE generalizations are used to perform computations such as geometry optimization of the model. We have calculated the energy band structure of monolayer WS2 with intrinsic and compressive deformations of 2% and 4% using PBE and HSE06, respectively. The band gap values calculated using PBE are 1.802 eV, 1.663 eV, and 1.353 eV, respectively, and the band gap values calculated with HSE06 are 2.267 eV, 2.034 eV, 1.751 eV. The results show that the bandgap values calculated by HSE06 are significantly higher than those calculated by PBE, but the bandgap variations calculated by the two methods have the same trend, and the shape characteristics of the energy band structure are also the same. However, it is worth noting that the computation time required for the HSE06 calculation is much longer than that of the PBE, which is far beyond the capability of our computer hardware, and the purpose of this paper is to investigate the change rule of the effect of deformation on the bandgap value, so to save the computational resources, the next calculations are all calculated using the PBE. The Monkhorst-Pack special K-point sampling method is used in the calculations. The cutoff energy for the plane wave expansion is 400 eV, and the K-point grid is assumed to be 5 × 5 × 1. Following geometric optimization, the iterative precision converges to a value of less than 0.03 eV/Å for all atomic forces and at least 1 × 10-5 eV/atom for the total energy of each atom. The vacuum layer's thickness was selected at 20 Å to mitigate the impact of the interlayer contact force.

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals.

The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.

Emergence of enhanced photocatalytic response in GO-hBN nanocomposites with tuned non-linear optical and surface electronic properties

The hexagonal Boron Nitride (hBN) nanostructures with tuned physicochemical properties find huge applications in optoelectronic devices. Herein, we have synthesized nanocomposite of hBN with graphene oxide (GO) in various ratios to acquire composition-dependent variation in their structural, surface electronic, linear, and non-linear optical properties. The insertion of GO in hBN nanosheets has modified their strain landscape, the electronic charge transfers from GO to hBN, increased the working time of free charge carriers, and suppressed electron-hole recombination, thus modifying its work function (WF). GO-hBN nanocomposites observed to have reduced bandgap where creation of defect induced mid-gap states lead to enhancement in non-linear absorption of two photons. Herein, we have established a linear relationship between Urbach energy (Eu), a measure of disorders and non-linear absorption coefficient (αNL). Additionally, we have observed that the tuned bandgap of the nanocomposites has significantly enhanced their performance as high-performance photocatalysts for the degradation of methyl orange, compared to bare hBN or GO. As a result, we discovered that Eu, αNL, WF and photodegradation activity of GO-hBN nanocomposites exhibit analogous variations in response to changes in the content of GO. Thus, by strategically prioritizing the modification of a single parameter while considering the potential effects on other relevant properties for application purpose, GO-hBN can effectively harness large spectrum areas for catalytic and optoelectronic applications.

Density functional theory study of the structure, stability, magnetic properties, and (hyper)polarizability of (sub-nm) rare-earth (RE) doped gold clusters: Au5RE with RE = Sc, Y, La-Lu.

Rare-earth doped materials are of immense interest for their potential applications in linear and nonlinear photonics. There is also intense interest in sub-nanometer gold clusters due to their enhanced stability and unique optical, magnetic, and catalytic properties. To leverage their emergent properties, here we report a systematic study of the geometries, stability, electronic, magnetic, and linear and nonlinear optical properties of Au5RE (RE = Sc, Y, La-Lu) clusters using density-functional theory. Several low-energy isomers consisting of planar or non-planar configurations are identified. For most doped clusters, the non-planar configuration is energetically favored. In the case of La-, Pm-, Gd-, and Ho-doped clusters, a competition between planar and non-planar isomers is predicted. A distinct preference for the planar configuration is predicted for Au5Eu, Au5Sm, Au5Tb, Au5Tm, and Au5Yb. The distinction between the planar and non-planar configurations is highlighted by the calculated highest frequencies, with the stretching mode of the non-planar configuration predicted to be stiffer than the planar configuration. The bonding analysis reveals the dominance of the RE-d orbitals in the formation of frontier molecular orbitals, which, in turn, facilitates retaining the magnetic characteristics governed by RE-f orbitals, preventing spin-quenching of rare earths in the doped clusters. In addition, the doped clusters exhibit small energy gaps between frontier orbitals, large dipole moments, and enhanced hyperpolarizability compared to the host cluster.