Generation Of Electrons Research Articles

Silica-coated nano zero-valent iron as a slow-release electron donor for sustained enhancement of aerobic denitrification in oligotrophic source water: Performance and mechanism

Limited organic carbon in drinking water constrains the removal of nitrate‑nitrogen (NO3−-N) via aerobic denitrification. This paper reports the use of silica-coated nano zero-valent iron (nZVI@SiO2) as a stable and sustainable electron donor to enhance aerobic denitrification. The nZVI@SiO2, synthesized via a one-step method, was resistant to oxidation and exhibited excellent stability. In conjunction with aerobic denitrifying bacteria, nZVI@SiO2 achieved NO3−-N and total nitrogen TN removal efficiencies of 90.64 % and 80.94 %, respectively. This represents an increase of 24.15 % in the efficiency of TN removal compared with that of the nZVI system. The activity of the nZVI system diminished gradually after just three cycles, whereas nZVI@SiO2 maintained NO3−-N and TN removal efficiencies of 89.33 % and 78.08 %, respectively, after four cycles, respectively, indicating its sustainable ability to enhance aerobic denitrification. Cyclic voltammetry and electrochemical impedance spectroscopy demonstrated enhanced electron transfer efficiency of nZVI@SiO2. Furthermore, nZVI@SiO2 significantly promoted the activity of the electron transfer system, ATP levels, nitrate/nitrite reductase activity, contents of complexes I and III, and extracellular polymeric substances. nZVI@SiO2 significantly enhanced electron generation, transfer, and consumption during biological denitrification by functioning as both an electron donor and mediator. The findings implicate nZVI@SiO2 as a means to enhance nitrogen removal by aerobic denitrifying microorganisms in oligotrophic water via sustained donation of electrons.

Single-Atom-Layer Metallization of Plasmonic Semiconductor Surface for Selectively Enhancing IR-Driven Photocatalytic Reduction of CO2 into CH4.

Efficient harvesting and utilization of abundant infrared (IR) photons from sunlight is crucial for the industrial application of photocatalytic CO2 reduction. Plasmonic semiconductors have significant potential in absorbing low-energy IR photons to generate energetic hot electrons. However, modulating these hot electrons to selectively enhance the activity of CO2 reduction into CH4 remains a challenge. Herein, the study proposes a single-atom-layer (SAL) metallization strategy to enhance the generation of IR-driven hot electrons and facilitate their transfer from plasmonic semiconductors to CO2 for producing CH4. This strategy is demonstrated using a paradigmatic W18O49@W-Sn nanowire array (NWA), where Sn2+ ions are grafted onto exposed O atoms on the surface of plasmonic W18O49 to form a surface W-Sn SAL. The incorporation of Sn single atoms enhances plasmonic absorption in IR light for W18O49 NWA. The W-Sn SAL not only promotes CO2 adsorption and reduces its reaction activation energy barrier but also shifts the endoergic CO-protonation process toward an exoergic reaction pathway. Thus, the W18O49@W-Sn NWA exhibits >98% selectivity for IR-driven CO2 reduction to CH4 with an activity over 9.0 times higher than that of bare W18O49 NWA. This SAL metallization strategy can also be applied to other plasmonic semiconductors for selectively enhancing CO2-to-CH4 reduction reactions.

Intelligent Flexible Pressure Sensors with Improved Sensing Range and Sensitivity Based on 3D-Graphene Patterning Induced by UV Laser.

Intelligent flexible sensors are an integral component of the next generation of consumer electronics. However, developing a flexible pressure sensing system that possesses both high sensitivity and a sensing range remains a key challenge in practical applications. Herein, a machine learning-assisted 3D laser-induced graphene (3D-LIG)/polydimethylsiloxane composite flexible pressure sensing system based on ultraviolet (UV) laser integrated fabrication was proposed. Low-cost LIG-based flexible sensors with a 3D carbonized structure were prepared by selective UV laser ablation and laser-induced graphitization. The interlayer interlocking structure, combined with the internal porous structure of LIG, enriches the sensing mechanism, allowing the sensor to exhibit triphasic linear response characteristics, demonstrating a large sensing range (0-500 kPa) and high sensitivity (0-20 kPa, 3.047 kPa-1). Based on machine-learning algorithms, an intelligent wearable sign language translation system was constructed capable of high-precision recognition of complex sign language sequence information. The integration of LIG with 3D microstructures allows a wider space for designing LIG-based flexible sensing structures and offers a promising platform for the development of intelligent wearable devices.

Nature-Inspired Artificial Aggregation-Induced Emission Antenna for Assembling with Algae to Promote Photosynthesis.

Inspired by the structure of chlorophyll assembled on the thylakoid membrane through its long hydrophobic chain, we designed cationic aggregation-induced emission (AIE) amphiphiles with two long hydrophobic chains to assemble with the electronegative cytomembrane of algae for efficiently converting natural ultraviolet light into usable blue light to promote photosynthesis. The photosynthesis efficiency of algae depended on the carbon chain length of the AIE amphiphile due to the difference in assembly capacity with the algal membrane. The AIE amphiphile with two hydrophobic chains of 12 carbon atoms effectively intercalated into the cytomembrane of algae, serving as an artificial membrane-embedded antenna to significantly improve light utilization by algae. This resulted in increased electron generation and a 98.6% increase in the electron transfer rate. Consequently, oxygen and ATP production in light-dependent reactions were boosted by about 100% and 64.5%, respectively, and the lipid yield increased by 45.7% in dark reactions. In addition, the AIE amphiphile also demonstrated a low biotoxicity. These results highlight the potential of AIE amphiphiles as membrane-embedded artificial antennas for optimizing natural photosynthesis.

Synthesis of Photocatalyst Based on WO3 Applying for the Treatment of Tetracycline Antibiotics

In this paper, WO3/g-C3N4 photocatalysts were fabricated by ultrasonic-assisted hydrothermal method at different mole ratios of WO3/g-C3N4. Ultraviolet–visible absorption spectroscopy (UV-Vis DRS) and photoluminescence (PL) results indicated that WO3/g-C3N4 photocatalyst with the WO3/g-C3N4 mole ratio of 1/1 (WC-1) showed visible light absorption ability and prevented electron-hole recombination rate better than WO3, g-C3N4 and other composites. The photocatalytic activities of synthesized photocatalysts were investigated by the photocatalytic oxidation of tetracycline (TC) antibiotics under visible light. The degradation efficiency of TC in aqueous environment by the WC-1 was 79.35% after 180 minutes. This value was higher than those of other materials. The improvement in photocatalytic property of the WO3/g-C3N4 was due to the efficient generation of electrons and holes.

Comparison of electronic and optoelectronic signal generation for (sub-)THz communications

Abstract In recent years, the significance of terahertz (THz) and (sub-)THz communications has grown substantially due to its promising trade-off between higher capacity compared to microwave-based communication and better resilience against weather dependent influences (e.g., fog and rain). While electronic and optoelectronic techniques have been extensively explored, each offering distinct advantages and limitations, they have predominantly been demonstrated and discussed as individual experiments, making performance comparison challenging. This paper addresses this gap by systematically benchmarking electronic and optoelectronic signal generation approaches under comparable conditions. Our experiments incorporate various receiver types, revealing that best performance is achieved by combining optoelectronic signal generation techniques at the transmitter in combination with an all-electric intradyne receiver. This results in a remarkable line rate of 200 Gbit/s over a distance of 52 m. To our knowledge, this represents the highest line rate achieved for technically relevant transmission distances for indoor access or outdoor small cell networks.

Probing photochemical dynamics using electronic vs vibrational sum-frequency spectroscopy: The case of the hydrated electron at the water/air interface.

Photo-dynamics can proceed differently at the water/air interface compared to in the respective bulk phases. Second-order non-linear spectroscopy is capable of selectively probing the dynamics of species in such an environment. However, certain conclusions drawn from vibrational and electronic sum-frequency generation spectroscopies do not agree as is the case for the formation and structure of hydrated electrons at the interface. This Perspective aims to highlight these apparent discrepancies, how they can be reconciled, suggests how the two techniques complement one another, and outline the value of performing both techniques on the same system.

Machine Learning Enabled High‐Throughput Screening of 2D Ultrawide Bandgap Semiconductors for Flexible Resistive Materials

AbstractThe 2D ultrawide bandgap (UWBG) semiconductors have attracted great attentions for the next generation of electronics and optoelectronics, owing to their superiority on material flexibility, device stability, and power consumption. However, few 2D UWBG semiconductors have been discovered, impeding their prosperous developments and widespread applications. Here, a high‐throughput workflow is constructed to screen 2D UWBG semiconductors assisted by machine learning, and 507 potential candidates are obtained. Moreover, by learning, predicting, and screening Young's modulus and Poisson's ratio, 31 flexible 2D UWBG semiconductors are identified. Then the generation and the diffusion of anion vacancies, as well as the corresponding electronic properties are investigated by using the first‐principles calculations, and 3 of them are demonstrated as the most promising candidates for the flexible resistive materials. The facile interface tunneling and the increased material conductance caused by the anion vacancies will contribute to the transition from high resistive state to low resistive state. This work provides an efficient high‐throughput screening protocol to enrich the family of 2D UWBG semiconductors and is expected to foster their practical applications.

Impact of overvoltage on the mode transition of the spark gap switch: from edge breakdown to stochastic breakdown

Abstract Spark gap switch (SGS) is a fundamental but critical component for large-scale pulsed power devices, whose reliable operation is significantly affected by the breakdown characteristics of SGS. It is observed experimentally that, with the increase of overvoltage, the bridging position of the spark channel transits from edge to stochastic center. In this work, the influence of overvoltage on the breakdown process of a parallel-plate SGS with low geometric distortion of static electric field (<13%) between an atmospheric-pressure air gap of 5 mm is investigated by particle-in-cell/Monte Carlo collision simulation. It is found that, under a low overvoltage (ratio of applied voltage U a to static breakdown voltage U 0, U a/U 0 = 1.5), the streamers at the edge first bridge the gap before that in the central region, due to the field enhancement induced by the electrode curvature. Under higher overvoltage (U a/U 0 = 3), the synchronicity between streamers initiating from the center and those from the edge is greatly improved during the inception stage. After the streamers pass the middle of the gap, the field enhancement at the streamer front is more intensified and promotes the generation of fast electrons. These fast electrons rapidly magnify the difference among the propagating streamers by providing abundant seed electrons ahead of the discharge channel, which leads to the randomness of the bridging position. The results in this work demonstrate the relationship between overvoltage and streamer dynamics, which is beneficial for the performance improvement of SGS.

Monte Carlo modeling of the origin of contaminant electrons on a 0.5T bi-planar Linac-MR.

In the last decade, hybrid linear accelerator magnetic resonance imaging (Linac-MR) devices have evolved into FDA-cleared clinical tools, facilitating magnetic resonance guided radiotherapy (MRgRT). The addition of a magnetic field to radiation therapy has previously demonstrated dosimetric and electron effects regardless of magnetic field orientation. This study uses Monte Carlo simulations to investigate the importance and efficacy of the magnetic field design in mitigating surface dose enhancement in the Aurora-RT, focusing specifically on contaminant electrons, their origin, and energy spectrum. The Aurora-RT 0.5 T Biplanar Linac-MR device was modeled using the BEAMnrc package using the updated EM macros, a magnetic field map generated from Opera 3D. Simulation generated phasespace data at the distal side of the first magnetic pole plate (89cm) and at machine isocenter (120cm) were analyzed with respect to electron energy spectra and electron creation origins, both with and without the static magnetic field. The presence of the main magnetic field was verified to affect the origin and distribution of contaminant electrons, removing them from the air column up to 60cm from the target, and focusing them along the CAX within the region below. Analysis of the remaining electron energy fluence reveals the net removal of electrons with energies>2 MeV and generation of electrons with energies<2 MeV in the presence of the static magnetic field as compared to no magnetic field. Moreover, in the presence of the magnetic field the integral energy contained in the contaminant electrons increases from 89cm to isocenter but is still 15% less overall than the integral energy contained in contaminant electrons without the magnetic field. This study provides an analysis of contaminant electrons in the Aurora-RT 0.5 T Linac-MR, emphasizing the role of magnetic field design in successfully minimizing electron contaminants.

Electric syntrophy-driven modulation of Fe0-dependent microbial denitrification

In natural or engineered anaerobic environments, iron oxidation-driven microbial denitrification plays a critical role in the water or wastewater treatment. Herein, we report a previously unidentified metallic iron (Fe0)-dependent denitrification mode driven by the electro-syntrophic interaction between electroactive microorganism and denitrifier. In a model denitrifying consortium of Shewanella oneidensis and Pseudomonas aeruginosa, we find that P. aeruginosa can accept electrons for nitrate reduction via the constructed electron transfer system of Fe0–S. oneidensis–P. aeruginosa. In the electro-syntrophic consortium, the membrane-bound CymA–OmcA–MtrC protein complexes of S. oneidensis drive the generation, transfer and consumption of electrons, thus enabling modulation of microbial metabolic activity. Specially, using Fe0 as the sole electron donor, S. oneidensis can act as a bio-engine to harvest electrons and conserve energy from Fe0 biocorrosion. Electrons released by S. oneidensis are utilized by P. aeruginosa for accomplishing microbial denitrification. Metatranscriptomics analysis demonstrated that the direct electron cross-feeding process facilitates the expression of genes encoding for denitrification enzymes, intracellular electron transfer proteins, and quorum sensing of P. aeruginosa. The Fe0-dependent electronic syntrophy in this work could provide a metabolic window for the growth of denitrifiers that is a new insight into nitrate removal or global nitrogen cycle.

Core/Shell ZnO/TiO2, SiO2/TiO2, Al2O3/TiO2, and Al1.9Co0.1O3/TiO2 Nanoparticles for the Photodecomposition of Brilliant Blue E-4BA

The synthesis and characterization of ZnO/TiO2, SiO2/TiO2, Al2O3/TiO2, and Al1.9Co0.1O3/TiO2 core/shell nanoparticles (NPs) is reported. The NPs were used for photocatalytic degradation of brilliant blue E-4BA under UV and visible light irradiation, monitored by high-performance liquid chromatography and UV-vis absorption spectroscopy. The size of the NPs ranged from 10 to 30 nm for the core and an additional 3 nm for the TiO2 shell. Al2O3/TiO2 and Al1.9Co0.1O3/TiO2 showed superior degradation under UV and visible light compared to ZnO/TiO2 and SiO2/TiO2 with complete photodecomposition of 20 ppm dye in 20 min using a 10 mg/100 mL photocatalyst. The “Co-doped” Al1.9Co0.1O3/TiO2 NPs show the best performance under visible light irradiation, which is due to increased absorption in the visible range. DFT-calculated band structure calculations confirm the generation of additional electronic levels in the band gap of γ-Al2O3 through Co3+ ions. This indicates that Co-doping enhances the generation of electron–hole pairs after visible light irradiation.

Binary Nature of Collisions Facilitates Runaway Electron Generation in Weakly Ionized Plasmas.

Dreicer generation is one of the main mechanisms of runaway electron generation in weakly ionized plasmas. It is often described as a diffusive flow from the Maxwellian core into high energies under the effect of the electric field. In this Letter we demonstrate a critical role of the binary nature of inelastic collisions in weakly ionized plasma during tokamak startup, where some electrons experience virtually no collisions during acceleration to the critical energy. We show that using the Fokker-Planck collisional operator can underestimate the Dreicer generation rate by several orders of magnitude.

Ni/n-Si Schottky junction: Self-biased infrared photodetection via hot carrier photoemission

Internal photoemission-based hot electron generation at metal-semiconductor junctions holds significant potential for silicon-based sub-bandgap NIR photodetectors. In this work, we designed a simple nickel-silicon Schottky junction using the pulsed laser deposition technique and performed both experimental and theoretical analyses. To reduce the complexity of fabrication and lower costs, we used a planar nickel thin film on top of n-type silicon. The thickness of the nickel thin film was optimized to improve absorption and hot electron generation near the Ni/Si interface. We measured and calculated reflectance using the transfer matrix approach to quantify the effect of thickness on EQE. We also calculated the thickness-dependent absorption profile to estimate hot electron production near the junction. The current-voltage characterization of Ni/n-Si Schottky photodetector was investigated under the dark conditions as well under 1200 nm and 1300 nm light illumination. Under self-bias conditions, a photodiode with a 12 nm Ni thickness exhibits responsivity of 0.124 mA/W and 0.069 mA/W under illumination from 1200 nm and 1300 nm LED light, respectively. Furthermore, we used a comprehensive theoretical model to quantify the planar Ni/Si hot carrier generation and emission efficiency. and experimentally validated the calculated EQEs with the fabricated device. We believe the proposed complementary metal-oxide-semiconductor-compatible and simply structured Ni/Si Schottky photodetector will have potential applications in the silicon-based optoelectronics market.

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

AbstractThreshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C to 275°C). The degradation mechanism of gate oxide under coupling of different electrical and thermal stress is revealed. When the device is subjected to +VGS, the relationship between VTH shift and temperature is not monotonic and there is a temperature turning point. This is mainly related to the capture/release and generation of electron traps. However, the VTH shift increases sharply and gate oxide breakdown for the device bias at +35 V, which is related to Fowler–Nordheim (F–N) tunnelling effect. For a large −VGS, the VTH shift is very small. Moreover, when the negative VGS decreases, the VTH shift is positively correlated with temperature, which may result from the activation and charge exchange of hole traps. However, the influence of moving ions changes the temperature dependence of VTH shift for the device bias at −30 V. Finally, the devices of different manufacturers are studied and similar change patterns are found. This finding provides guidance for the further application of SiC MOSFETs under high temperatures and different voltages.

Enhanced denitrification by sunlight–hematite: A neglected nitrogen flow pattern in red soil

Mineral-microbe interactions in the Earth's Critical Zone significantly influence elemental biogeochemical cycling and energy flow processes. This study addresses the key scientific question of how semiconducting minerals drive microbial nitrogen cycling. In the red soil environment, the presence of semiconducting minerals enhances the denitrification process mediated by facultative microorganisms (Pseudomonas aeruginosa PAO1) with denitrifying activity. Compared to darkness, light significantly enhanced the synergistic denitrification kinetic process of red soil and Pseudomonas aeruginosa PAO1 (1.87 times). Cyclic voltammetry shows that the P. aeruginosa PAO1-red soil synergistic system exhibits distinct redox peaks under light. The constant potential current curve and electrochemical impedance spectroscopy measurements reveal a high photocurrent density (1.0 μA/cm2) and minimal polarization resistance (102 Ω) under this condition. These findings confirm that the sunlight-red soil-P. aeruginosa PAO1 synergistic process has excellent electron generation and migration capacity, active redox reactions, and good electron compatibility. Additionally, the photoelectrons of semiconductive minerals in red soil profoundly impact the metabolic processes of microbial denitrification functional genes. Using real-time polymerase chain reaction (qPCR) gene array technology, the abundance of nitrogen metabolism functional genes in P. aeruginosa PAO1 increased by 200 % during the light-red soil synergistic process. Notably, denitrification-related genes (ureC, nirS1, gdhA, and nosZ2) were significantly upregulated. This study confirms that semiconducting minerals are involved in the nitrogen cycle pathway of microbial denitrification and supplements the theory of mineral-microbial synergistic element biogeochemical cycling in the natural environment.

Control of dissolved H2 concentration enhances electron generation, transport and TCE reduction by indigenous microbial community

Electrokinetic enhanced bioremediation (EK-Bio) is practical for trichloroethene (TCE) dechlorination because the cathode can produce a wide range of dissolved H2 (DH) concentrations of 1.3–0 mg/L from the electrode to the aquifer. In this study, TCE dechlorination was investigated under different DH concentrations. The mechanisms were discussed by analyzing the microbial community structure and abundance of organohalide-respiring bacteria (OHRB) using 16S rRNA, and the gene abundances of key enzymes in the TCE electron transport chain using metagenomic analysis. The results showed that the moderate DH concentration of 0.19–0.53 mg/L exhibited the most pronounced TCE dechlorination, even better than the higher DH concentrations, due to the optimal redox environment, the enrichments of OHRB, reductive dehalogenase (rdhA) genes and key enzyme genes in the electron generation and transport chain. More electrons were obtained from H2 metabolism by Dehalobacter by promoting the formation of [NiFe] hydrogenase (HupS/L/C) or from glycolysis by versatile OHRB by stimulating the formation of formate and enriching formate dehydrogenase (FDH) under moderate DH conditions. In addition, the enhanced amino acid metabolism improved the vitamin K cycle for electron transport and enriched the reductive dechlorinating enzyme (RDase) genes. This study identifies the optimal DH concentration that facilitates bioremediation efficiency, provides insights into microbial community shifts and key enzymatic pathways in EK-Bio remediation.

Breathable and Stretchable Epidermal Electronics for Health Management: Recent Advances and Challenges.

Advanced epidermal electronic devices, capable of real-time monitoring of physical, physiological, and biochemical signals and administering appropriate therapeutics, are revolutionizing personalized healthcare technology. However, conventional portable electronic devices are predominantly constructed from impermeable and rigid materials, which thus leads to the mechanical and biochemical disparities between the devices and human tissues, resulting in skin irritation, tissue damage, compromised signal-to-noise ratio (SNR), and limited operational lifespans. To address these limitations, a new generation of wearable on-skin electronics built on stretchable and porous substrates has emerged. These substrates offer significant advantages including breathability, conformability, biocompatibility, and mechanical robustness, thus providing solutions for the aforementioned challenges. However, given their diverse nature and varying application scenarios, the careful selection and engineering of suitable substrates is paramount when developing high-performance on-skin electronics tailored to specific applications. This comprehensive review begins with an overview of various stretchable porous substrates, specifically focusing on their fundamental design principles, fabrication processes, and practical applications. Subsequently, a concise comparison of various methods is offered to fabricate epidermal electronics by applying these porous substrates. Following these, the latest advancements and applications of these electronics are highlighted. Finally, the current challenges are summarized and potential future directions in this dynamic field are explored.

Simultaneous Structural and Electronic Engineering on Bi- and Rh-co-doped SrTiO3 for Promoting Photocatalytic Water Splitting.

Activating metal ion-doped oxides as visible-light-responsive photocatalysts requires intricate structural and electronic engineering, a task with inherent challenges. In this study, we employed a solid (template)-molten (dopants) reaction to synthesize Bi- and Rh-codoped SrTiO3 (SrTiO3 : Bi,Rh) particles. Our investigation reveals that SrTiO3 : Bi,Rh manifests as single-crystalline particles in a core (undoped)/shell (doped) structure. Furthermore, it exhibits a well-stabilized Rh3+ energy state for visible-light response without introducing undesirable trapping states. This precisely engineered structure and electronic configuration promoted the generation of high-concentration and long-lived free electrons, as well as facilitated their transfer to cocatalysts for H2 evolution. Impressively, SrTiO3 : Bi,Rh achieved an exceptional apparent quantum yield (AQY) of 18.9 % at 420 nm, setting a new benchmark among Rh-doped-based SrTiO3 materials. Furthermore, when integrated into an all-solid-state Z-Scheme system with Mo-doped BiVO4 and reduced graphene oxide, SrTiO3 : Bi,Rh enabled water splitting with an AQY of 7.1 % at 420 nm. This work underscores the significance of simultaneous structural and electronic engineering and introduces the solid-molten reaction as a viable approach for this purpose.

Rhodium‐Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra‐Wide Bandgap Semiconductors

AbstractBeta gallium oxide (β‐Ga2O3) is an ultra‐wide‐bandgap semiconductor with advantages for high‐power electronics. However, the power resistance of β‐Ga2O3‐based devices is still much lower than its material limit due to its flat band dispersion at its valence band maximum (VBM) and the difficulty for p‐type doping. Here, β‐Ga2O3‐based new type ternary ultra‐wide bandgap semiconductors: β‐(RhxGa1‐x)2O3’s alloys are reported with x up to 0.5. The energy and band‐dispersion curvature of β‐Ga2O3’s VBM are significantly enhanced via Rh‐alloying. Compared to that in β‐Ga2O3, the β‐(RhxGa1‐x)2O3’s VBMs increase more than 1.35 eV. The hole mass of β‐(Rh0.25Ga0.75)2O3 is only 52.3% of that in β‐Ga2O3. The decreased hole mass is correlated with the equal Rh─O bond along the b‐axis. Thanks to the simultaneous rise of conduction band minimums, the bandgaps of β‐(RhxGa1‐x)2O3 are still much larger than that in commercial silicon carbide. Moreover, the alloys show direct bandgaps in a wide range of x, and a direct and ultra‐wide bandgap of 4.10 eV is determined in β‐(Rh0.3125Ga0.6875)2O3. Combined with the enhanced valence energy, reduced hole mass, and ultra‐wide bandgap, the β‐(RhxGa1‐x)2O3 can be candidate semiconductors for a new generation of power electronics, ultraviolet optoelectronics, and complementary metal‐oxide‐semiconductor (CMOS) technologies.