Electron Injection In Devices Research Articles

Fluorinated Thiophene-Phenylene Co-Oligomers for Optoelectronic Devices.

Organic optoelectronics requires materials combining bright luminescence and efficient ambipolar charge transport. Thiophene-phenylene co-oligomers (TPCOs) are promising highly emissive materials with decent charge-carrier mobility; however, they typically show poor electron injection in devices, which is usually assigned to high energies of their lowest unoccupied molecular orbitals (LUMOs). A widely used approach to lower the frontier orbitals energy levels of a conjugated molecule is its fluorination. In this study, we synthesized three new fluorinated derivatives of one of the most popular TPCOs, 2,2'-(1,4-phenylene)bis[5-phenylthiophene] (PTPTP) and studied them by cyclic voltammetry, absorption, photoluminescence, and Raman spectroscopies. The obtained data reveal a positive effect of fluorination on the optoelectronic properties of PTPTP: LUMO levels are finely tuned, and photoluminescence quantum yield and absorbance are increased. We then grew crystals from fluorinated PTPTPs, resolved their structures, and showed that fluorination dramatically affects the packing motif and facilitates π-stacking. Finally, we fabricated thin-film organic field-effect transistors (OFETs) and demonstrated a strong impact of fluorination on charge injection/transport for both types of charge carriers, namely, electrons and holes. Specifically, balanced ambipolar charge transport and electroluminescence were observed only in the OFET active channel based on the partially fluorinated PTPTP. The obtained results can be extended to other families of conjugated oligomers and highlight the efficiency of fluorination for rational design of organic semiconductors for optoelectronic devices.

Efficient Deep-Blue Electroluminescence Based on Phenanthroimidazole-Dibenzothiophene Derivatives with Different Oxidation States of the Sulfur Atom.

Developing efficient deep-blue materials is a long-term research focus in the field of organic light-emitting diodes (OLEDs). In this paper, we report two deep-blue molecules, PITO and PISF, which share similar chemical structures but exhibit different photophysical and device properties. These two molecules consist of phenanthroimidazole and dibenzothiophene analogs. The distinction of their chemical structures lies in the different oxidation states of the S atom. For PITO, the S atom is oxidized and the resulting structure dibenzothiophene S,S-dioxide becomes electron deficient. Therefore, PITO displays remarkable solvatochromism, implying a charge-transfer (CT) excited state formed between the donor (D) phenanthroimidazole and acceptor (A) dibenzothiophene S,S-dioxide. For PISF, it is constituted of phenanthroimidazole and dibenzothiophene in which the S atom is not oxidized. PISF displays locally excited (LE) emission with little solvatochromism. Compared with PISF, the D-A molecule PITO with an electron-deficient group shows a much lower LUMO energy level, which is in favor of electron injection in device. In addition, PITO exhibits more balanced carrier transport. However, PISF is capable of emitting in the shorter wavelength region, which is beneficial to obtain better color purity. The doped electroluminescence (EL) device of the D-A molecule PITO manifests deep-blue emission with CIE coordinates of (0.15, 0.08) and maximum external quantum efficiency (EQE) of 4.67 %. The doped EL device of the LE molecule PISF, however, reveals an even bluer emission with CIE coordinates of (0.15, 0.06) and a maximum EQE of 4.08 %.

Highly efficient orange–red electroluminescence from a single layer MEH-PPV-POSS:CdS0.75Se0.25 hybrid PLED

Abstract In this study, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] end capped with polyhedral oligomeric silsesquioxanes (MEH-PPV-POSS): cadmium sulfide selenide quantum dots (CdS 0.75 Se 0.25 QDs) nanocomposites based OLEDs were fabricated. By the addition of CdS 0.75 Se 0.25 QDs into the polymer active layer, a considerable enhancement was observed in terms of hole and electron injection in devices. Additionally, the presence of QDs reduced the interchain interaction of polymer that resulted in narrower electroluminescence (EL) spectrum. The device structure of ITO/PEDOT: PSS/MEH-PPV-POSS: 25 wt% CdS 0.75 Se 0.25 /Ca (40 nm)/Al demonstrated the best performance with a brightness of 8672 cd/m 2 at 10 V, current efficiency of 2.5 cd/A at 8 V, and an EQE of 0.55% at 150 mA/cm 2 .

Enhanced electron injection in organic light-emitting devices using Al/LiF electrodes

AbstractThe temperature dependence of the current-voltage-luminescence characteristics in organic light-emitting diodes (OLEDs) withvarying thickness of LiF layers are studied to understand the mechanism of the enhanced electron injection by inserting a thininsulating LiF layer at the tris(8-hydroxyquinoline) aluminum (Alq 3 )–Al interfaces. At room temperature, the LiF/Al cathodeenhances the electron injection and the quantum e†ciency (QE) of the electroluminescence (EL), implying that the LiF thin layerlowers the electron-injection barrier. However, at low temperatures it is observed that the injection-limited current dominates andthe barrier height for the electron injection in the device with LiF/Al appears to be similar with the Al only device. Thus, our resultssuggest that at low temperatures the insertion of LiF does not cause a significant band bending of Alq 3 or reduction of the Al workfunction. O 2001 Elsevier Science B.V. All rights reserved. PACS: 78.60.Fi; 85.60.JbKeywords: Organic light-emitting diodes; Electroluminescence; Al/LiF electrodes