A technique is proposed to grow horizontal carbon nanotubes (CNTs) bridgingmetal electrodes and to assess their electrical properties. A test structure wasutilized that allows for selective electrochemical sidewall catalyst placement. Theselectivity of the technique is based on the connection of the desired metal electrodesto the silicon substrate where the potential for electrochemical depositionwas applied. Control over the Ni catalyst size (15–30 nm) and density (up to3 × 1011 particles cm − 2) is demonstrated. Horizontal CNTs with controlled diameter and densitywere obtained by CVD growth perpendicular to the sidewalls of patternedTiN electrode structures. Electrode gaps with spacings from 200 nm up to5 µm could be bridged by both direct CNT–electrode contact and CNT–CNT entanglement. TheTiN–CNT–TiN and TiN–CNT–CNT–TiN bridges were electrically characterizedwithout any further post-growth contacting. Resistance values as low as40 Ω were measured for the smallest gap spacing and depended mainly on the number andconfiguration of the CNT bridges. The proposed method could be implemented forCNT-based horizontal interconnections and be a route to make different nanoelectronicdevices such as chemical and electromechanical sensors.