Electro-optic Modulator Research Articles

Polarization modulated spectroscopic ellipsometry-based surface plasmon resonance biosensor for E. coli K12 detection

In this work, we report on the application of the polarization modulated spectroscopic ellipsometry-based surface plasmon resonance method for sensitive detection of microorganisms in Kretschmann configuration. So far, rotating analyzer and single wavelength polarization modulation methods have widely been investigated for phase sensitive surface plasmon resonance measurement. In this study, a much simpler optical setup relying on fast electro-optic phase modulator crystals is introduced for bacteria detection. A beta barium borate crystal connected to a function generator is adapted for generating phase shifts in the millisecond regime to extract the ellipsometric angles (Ψ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Psi$$\\end{document} and Δ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Delta$$\\end{document}) under the surface plasmon resonance condition. For detection, the gold surface was functionalized with anti-Escherichia coli antibodies, and E. coli K12 was attached to them. We show that polarization modulated spectroscopic ellipsometry achieves a refractive index resolution in the order of 10-5\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$10^{-5}$$\\end{document} RIU, and a limit of detection of 102\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$10^{2}$$\\end{document} CFU/mL for E. coli K12 which is compatible with other surface plasmon resonance based phase sensitive methods with more complex detection concepts. As a follow-up step, an optical model can be developed to enhance this biosensor’s performance, and applications for sorting and detecting other biological targets will be investigated.

Optimization and multiphysics analysis of high-performance lithium niobate modulators

Thin-film lithium niobate electro-optic modulators (TFLN EOMs) are widely utilized across various fields due to their exceptional performance. In this theoretical study, we optimized a TFLN EOM featuring a multimode interference coupler, cosine-curved waveguides, and a modulating arm straight waveguide structure. By tuning the etching depth, waveguide width, and geometric parameters of the traveling wave electrodes, we achieved a half-wave voltage-length product of 1.6V⋅cm and a 3 dB bandwidth of approximately 140 GHz. Additionally, we performed a multiphysics analysis to investigate the temperature characteristics of the modulator. The results indicate that increased temperature induces thermal-optic effects in the material, leading to changes in the waveguide’s refractive index and the optical beam phase, which results in increased insertion loss. Moreover, the stress generated by thermal expansion is concentrated in the modulator’s waveguide, representing a weak point that is prone to failure.

Integrated electro-optic modulator on a lead zirconate titanate-silicon nitride heterogeneous platform.

Integrated electro-optic (EO) modulators are the core components of the optoelectronic information technology, and lithium niobate is currently the most widely used crystalline thin film material; however, finite EO coefficients limit the modulation efficiency of the modulators. In this Letter, we present an integrated EO modulator using a microring resonator on the lead zirconate titanate (PZT) and silicon nitride (SiN) heterogeneous platform. The microwave attenuation is reduced by using low loss tangent and dielectric constant SiN as the electrode substrate, achieving an EO bandwidth of 33 GHz. Thanks to the high quality of the PZT film deposition and the substantial EO overlap of our structure, ultrahigh modulation efficiency with the half-wave voltage-length product of 0.7 V·cm is achieved. In addition, as a remarkable result, an 80-Gbps on-off keying signal is generated using the modulator.

Foundry fabricated compact slow-light Mach-Zehnder modulator and photodetector for on-chip analog photonic computing

This work presents a scaling pathway of on-chip analog photonic computing using foundry-fabricated silicon electro-optic (EO) slow-light Mach-Zehnder modulators (SL-MZMs) and compact Ge photodetectors (PDs) to construct a computing unit. Two SL-MZMs with phase shifter (PS) lengths of 500 μm and 150 μm are studied in this work. The bit resolution, nonlinearity, clock frequency, and power consumption of the photonic computing link, including an RF amplifier, on-chip SL-MZM, and a PD, are thoroughly investigated. The computing link using the SL-MZM with 500 μm has demonstrated a low normalized mean square error (NMSE) of 0.0305 at 8-bit resolution under 3.2 GHz clock frequency. Under the setting of 6-bit resolution at a clock frequency of 800 MHz, high computing accuracy was achieved with a measured NMSE of 0.0018 using the SL-MZM with 150 μm PS length. Using the Google Speed Commands dataset to run a voice keyword spotting task, we determine that 6-bit resolution operating at 3.2 GHz achieves the optimal power-accuracy trade-off. We show a 20× improvement in energy efficiency and a 3.35× improvement in area efficiency compared to NVIDIA V100 GPU [“Volta: Performance and programmability,” IEEE Micro 38(2), 42 (2018)10.1109/MM.2018.022071134 ]. These results show that our compact SL-MZMs and PDs promise to scale up photonic computing for practical machine-learning applications.

16-channel photonic solver for optimization problems on a silicon chip

A programmable photonic solver for quadratic unconstrained binary optimization (QUBO) problems is demonstrated with a hybrid optoelectronic scheme, which consists of a photonic chip and an electronic driving board. The photonic chip is employed to perform the optical vector-matrix multiplication (OVMM) to calculate the cost function of the QUBO problem, while the electronic processor runs the heuristic algorithm to search for the optimal solution. Due to the parallel and low-latency propagation of lightwave, the calculation of the cost function can be accelerated. The photonic chip is fabricated on the silicon on insulator (SOI) substrate and integrates 16 high-speed electro-optic modulators, 88 thermo-optic phase shifters, and 16 balanced photodetectors. The computing speed of the photonic chip is 1.66 TFLOP/s. As a proof of principle, two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities. These results present the potential of fast solving optimization problems with integrated photonic systems.

Strain-concentration for fast, compact photonic modulation and non-volatile memory

A critical figure of merit (FoM) for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators maximize dT/dV via a high EO coefficient or longer light-material interaction lengths but are ultimately limited by material losses and nonlinearities. Optical and RF resonances improve dT/dV at the cost of spectral non-uniformity, especially for high-Q optical cavity resonances. Here, we introduce an EO modulator based on piezo-strain-concentration of a photonic crystal cavity to address both trade-offs: (i) it eliminates the trade-off between dT/dV and waveguide loss—i.e., enhancement of the resonance tuning efficiency dv c /dV for the fixed EO coefficient, waveguide length, and cavity Q—and (ii) at high DC strains it exhibits a non-volatile (NV) cavity tuning Δvc,NV for passive memory and programming of multiple devices into resonance despite fabrication variations. The device is fabricated on a scalable silicon nitride-on-aluminum nitride platform. We measure dv c /dV=177±1MHz/V, corresponding to Δv c =40±0.32GHz for a voltage spanning ±120V with an energy consumption of δU/Δv c =0.17nW/GHz. The modulation bandwidth is flat up to ωBW,3dB/2π=3.2±0.07MHz for broadband DC-AC and 142±17MHz for resonant operation near a 2.8 GHz mechanical resonance. Optical extinction up to 25 dB is obtained via Fano-type interference. Strain-induced beam-buckling modes are programmable under a “read-write” protocol with a continuous, repeatable tuning range of 5±0.25GHz, allowing for storage and retrieval, which we quantify with mutual information of 2.4 bits and a maximum non-volatile excursion of 8 GHz. Using a full piezo-optical finite-element-model (FEM) we identify key design principles for optimizing strain-based modulators and chart a path towards achieving performance comparable to lithium niobate-based modulators and the study of high strain physics on-chip.

Thin film lithium niobate electro-optic modulator with reduced half-wave voltage length product through design

This paper aims at shortening electrode spacing in a thin film lithium niobate (TFLN) electro-optic modulator (EOM) while avoiding an increase in metal absorption loss, thereby reducing the half-wave voltage length product (V π ⋅L). Through numerical simulations, we find that metal absorption loss reaches its peak values when the optical modes of the metal-clad dielectric waveguide and ridged waveguide hybridize. This negative effect can be mitigated by adjusting the electrode width to modify the optical mode of the metal-clad dielectric waveguide. In addition, we raise the vertical position of the electrodes to further mitigate metal absorption loss and reduce the electrode spacing. By calculating the optimal buffer layer thickness for two crystal axis orientations, our findings reveal a 19% reduction in V π ⋅L at conventional crystal axis orientation (θ=±90∘) and a 16% decrease at unconventional crystal axis orientation (θ=54∘). Notably, V π ⋅L at unconventional crystal axis orientation is 5% lower than at conventional crystal axis orientation. These findings demonstrate the effectiveness of geometric configuration optimization toward enhancing the efficiency and performance of the TFLN EOM.

Widefield optical coherence tomography by electro-optical modulation

Optical coherence tomography (OCT) is a unique imaging modality capable of axial sectioning with a resolution of only a few microns. Its ability to image with high resolution deep within tissue makes it ideal for material inspection, dentistry, and, in particular, ophthalmology. Widefield retinal imaging has garnered increasing clinical interest for the detection of numerous retinal diseases. However, real-time applications in clinical practice demand the contrast of swept-source OCT at scan speeds that limit their depth range. The curvature of typical samples, such as teeth, corneas, or retinas, thus restricts the field-of-view of fast OCT systems. Novel high-speed swept sources are expected to further improve the scan rate; however, not without exacerbating the already severe trade-off in depth range. Here, we show how, without the need for mechanical repositioning, harmonic images can be rapidly synthesized at any depth. This is achieved by opto-electronic modulation of a single-frequency swept source laser in tandem with tailored numerical dispersion compensation. We demonstrate experimentally how real-time imaging of highly-curved samples is enabled by extending the effective depth-range 8-fold. Even at the scan speed of a 400 kHz swept source, harmonic OCT enables widefield retinal imaging.

Integrated Pockels Modulators on Silicon Photonics Platform

AbstractElectro‐optic (EO) modulators are essential components in various fields, including optical communication, free‐space communication, microwave photonics, sensing, and light detection and ranging. The EO modulation enables the fast conversion of electric signals into optical signals, facilitating the precise manipulation of light. With advancements in fabrication processing techniques, next‐generation integrated EO modulators have demonstrated substantial improvements in modulation efficiency, bandwidth, and footprint. Here, the latest research progress in integrated EO modulation, focusing on the principle of the Pockels effect, key modulation metrics, novel EO thin‐film material platforms, and innovative device architectures is overviewed. Finally, it is evaluated different schemes and provide perspectives on future trends in developing integrated EO modulators, highlighting both the advantages and challenges of integrated EO modulation, including waveguide and electrode engineering, integrated methods, and other applications for large‐scale photonic integrated circuits.

Cycle-to-cycle analysis for high-repeatability optical-heterodyne interferometry

Optical-heterodyne interferometry enables high-precision measurement of displacement, surface topography, and retardation via the introduction of an optical frequency shift. However, certain types of frequency-shifters including rotating half-waveplates may induce repetitive intensity variation, resulting in precision degradation. To address this issue, the heterodyne signals are split at the local minima during analysis. Using this approach, a single-shot retardation repeatability of λ/380, 000 is achieved at 80 Hz sampling. The proposed method applies to other types of optical-heterodyne interferometry to address challenges such as residual amplitude modulation of an electro-optic modulator to facilitate more precise measurement.

Femtotesla atomic magnetometer with counter-propagating optical sideband pumping.

The ultrasensitive magnetometer has a vital importance in fundamental research and applications. Currently, the spin-exchange relaxation-free (SERF) atomic magnetometer has been reported with a sensitivity around the level of fT/Hz1/2. To enhance the sensitivity, a gradiometer configuration has usually been introduced to cancel the common-mode noise between two separate channels. However, the signal and response from different channels are not the same due to the attenuation of the pump beam. Here, we proposed a counter-propagating optical sideband pumping method to polarize the atoms, using the electro-optic modulator to modulate the single-pump beam, generating two symmetrically red- and blue-detuned sidebands of frequency. This scheme leads to a significant reduction of undesirable effects coming along with the optical pumping, such as light shifts and spatial inhomogeneity in atomic spin polarization. With the help of this pumping scheme, the two channels have the same magnetic response, and we have built a gradiometer atomic magnetometer with a sensitivity of 0.5 fT/Hz1/2 ranging from 5 to 40 Hz. Our results propose the possibility of creating larger arrays of atomic magnetometers (AMs) with high sensitivity and spatial resolution based on single-vapor cells for magnetocardiography and magnetoencephalography imaging or searching for exotic spin-dependent interactions.

Enhanced electro-optic modulation stability in KTa1−xNbxO3 crystal by direct current electric field

Enhanced electro-optic modulation stability in KTa1−xNbxO3 crystal by direct current electric field

High-Linearity Dual-Parallel Mach–Zehnder Modulators in Thin-Film Lithium Niobate

Microwave photonic (MWP) systems are inseparable from conversions of microwave electrical signals into optical signals, and their performances highly depend on the linearity of electro-optic modulators. Thin-film lithium niobate (TFLN) is expected to be an ideal platform for future microwave photonic systems due to its compact size, low optical loss, linear electro-optic effect, and high bandwidth. In this paper, we propose a TFLN modulator with a low voltage–length product (VπL) of 1.97 V·cm and an ultra-high-linearity carrier-to-distortion ratio (CDR) of 112.33 dB, using a dual-parallel Mach–Zehnder interferometer configuration. It provides an effective approach to fully suppress the third-order intermodulation distortions (IMD3), leading to 76 dB improvement over a single Mach–Zehnder modulator (MZM) in TFLN. The proposed TFLN modulator would enable a wide variety of applications in integrated MWP systems with large-scale integration, low power consumption, low optical loss, and high bandwidth.

Modeling and application of a bidirectional Mach–Zehnder electro-optic modulator with enhanced high-frequency modulation efficiency

We present a simple way to enhance bidirectional broadband modulation in a traveling wave Mach–Zehnder electro-optic modulator (EOM) by removing matched impedance and effecting a reflection of the microwave signal. A model was devised for determining the modulation efficiency (ME) in the presence of microwave reflection, without access to the physical parameters of the EOM. By using the model, the simulated MEs matched well with the measured ones, which verified the correctness of the model and demonstrated that the internal parameters of the modulator could be inferred from the model. Compared with the traditional unidirectional EOM, the measured ME of the bidirectional modulator for the optical signal that counter-propagates with the incident microwave signal was improved by 10 times at least. When the velocities of microwave and optical signals were matched, the MEs at the frequency higher than 3.3 GHz were further improved. Our model was also used to derive the optical interference signal utilizing bidirectional modulation. It was found that the signal intensity was enhanced significantly, and further improved after introducing the velocity match. This work can be expected to open up many microwave photonics applications where bidirectional optical modulation is utilized in novel sensing and metrology.

Lithium Niobate Electro-Optical Modulator based on ion-cut wafer scale heterogeneous bonding on patterned SOI wafers

Lithium Niobate Electro-Optical Modulator based on ion-cut wafer scale heterogeneous bonding on patterned SOI wafers

Modeling and experimental characterization of a compact Mach–Zehnder electro-optic modulator on the SOI

The Mach–Zehnder electro-optic modulator (MZM) plays a crucial role in photonics integration technology during signal transmission. We propose the design and fabrication of a silicon-based electro-optic modulator based on the M-Z structure and design a modulator using silicon as the waveguide core layer on a silicon dioxide substrate. The detailed design involves a 1×2 splitter, branch waveguides, modulating arm waveguides, and a 2×1 combiner. The MZM fabrication and characterization results reveal that the half-wave voltage of the silicon-based MZM is 2 V, with an optical loss of −2.464dB and a device core size of 450µm×2800µm. The experimental results indicate that the MZM with a low half-wave voltage, a low loss, and high integration has significant value. The proposed MZM exhibits considerable improvements, featuring a low half-wave voltage and a low loss, and this device may serve as a fundamental component in wearable large-scale photonic integrated circuits for weak ECG real-time detection.

Synthesis and optical properties of fluorinated polyurethaneimide electro-optic waveguide polymer

Fluorinated polyurethaneimide (PUI) electro-optic waveguide polymer with polyurethane and polyimide chain segment structures was synthesized by stepwise polymerization using the synthesized amino ester oligomer pu and imide oligomer pi as monomers. Since the main chain structure of the synthesized PUI had the functionality of both polyurethane and polyimide chain segment structures, it combines the excellent thermal and film-forming properties of polyurethanes and polyimides, as well as lower optical transmission loss in the near-infrared wavelength band. The glass transition temperature (Tg) of PUI was 182 °C, and the 5% heat loss decomposition temperature was 325 °C. The PUI had good optical properties with an optical propagation loss of 1.10 dB/cm and an electro-optic (EO) coefficient (γ33) of 86 pm/V at a wavelength of 1550 nm. A Mach-Zehnder interferometric polymer waveguide EO modulator had been designed and fabricated by using the PUI as a waveguide electro-optic core layer. The prepared polymer waveguide EO modulator showed a good electro-optic modulation response at a wavelength of 1550 nm under an applied 1 kHz sinusoidal modulation signal. The results showed that the synthesized PUI met the performance requirements for the preparation of polymer optical waveguide devices and was a polymer electro-optic waveguide material with good overall performance.

Investigation of the capabilities of an electro-optic modulator based on a temperature-noncritical KTP crystal

Investigation of the capabilities of an electro-optic modulator based on a temperature-noncritical KTP crystal

Ring-assisted, racetrack, and Mach-Zehnder modulator: which one offers the lowest voltages and chirp-free operation?

This study presents a comparison between resonant and non-resonant electro-optical modulator configurations. The focus lies on finding the configuration with the highest modulation amplitude at the lowest drive voltage while achieving a large electro-optical bandwidth. It is found that the ring-assisted Mach-Zehnder modulator (RaMZM) offers chirp-free and resonantly enhanced modulation without bandwidth limitations imposed by the ring. In contrast, a racetrack modulator (RTM) offers resonant enhancement at the cost of a chirped modulated signal and with a bandwidth limitation. The traditional non-resonant Mach-Zehnder modulator (MZM) configuration requires higher modulation voltages while offering chirp-free operation with a flat frequency response. The RaMZM, therefore, looks like an ideal candidate for encoding information in backbone networks where small modulation voltages and perfect control over the phase of a signal are needed. The results are supported by experiments that show driverless plasmonic modulation at 220 GBaud 2PAM, 160 GBaud 4PAM and 100 GBaud 8PAM with record low peak voltages of 0.5 V.

Compact low-half-wave-voltage thin film lithium niobate electro-optic phase modulator fabricated by photolithography-assisted chemo-mechanical etching (PLACE).

We present a compact dual-arm thin-film lithium niobate (TFLN) electro-optic phase modulator fabricated using the photolithography-assisted chemo-mechanical etching (PLACE) technique. The design of the device doubles the modulation amount compared to single-arm modulators while maintaining the same chip length. Achieving a half-wave voltage of approximately 3 V, the device outperforms conventional single-arm phase modulators. Furthermore, the phase modulator exhibits low sensitivity to optical wavelengths in the range of 1510-1600 nm and offers a low insertion loss of 2.8 dB. The capability to generate multiple sideband signals for optical frequency comb applications is also demonstrated, producing 29 sideband signals at an input microwave power of 2 W.