Electrical Resistivity Of Ce Research Articles

Electrical Resistivity of Ce2Ir3Ge5under High Pressure

We measured electrical resistivity on antiferromagnet Ce 2 Ir 3 Ge 5 under high pressure up to 8 GPa. It is shown that the Néel temperature (=9.5 K) at ambient pressure decreased by increased pressure. The Néel temperature seems to be zero at a critical pressure P c ≃2.0 GPa suddenly. The variation by higher pressure above 2.0 GPa does not seem prominence up to 8 GPa.

Anisotropic behavior in resistivity of RAgSb 2 ( R=Ce, La )

CeAgSb 2 crystallizes in the tetragonal ZrCuSi 2 type structure (P4/nmm), which consists of Sb–Ce, Sb–Ag–Ce, Sb–Sb layers. It shows the peculiar anisotropic ferromagnetic ordering below 9.7 K with a small ordered moment of 0.33 μ B. Its residual resistivity steeply increases above p c ≅ 3.3 GPa where the magnetic order disappears. It is expected that the p–f mixing on the peculiar hollow square pillar-like Fermi surface plays an important role in CeAgSb 2, while similar Fermi surfaces were not observed in LaAgSb 2 . We have measured the anisotropy in the electrical resistivity of Ce x La 1− x AgSb 2 to study the p–f mixing effect. Small humps were observed in the temperature dependence of the resistivity in Ce x La 1− x AgSb 2. We expected them the CDW transition. The CDW state coexisted with the ferromagnetic state around x = 0.2 .

Antiferromagnetism in Ce(Ni 1− xPd x) 2Ge 2 single crystals near magnetic instability

We have measured specific heat and electrical resistivity of Ce(Ni 1− x Pd x ) 2Ge 2 ( x=0.09 and 0.12) single crystals with antiferromagnetic ground state. For x∼0.12 crystal, there is no obvious rise in the electrical resistivity around the Néel temperature T N. This antiferromagnetic ordering might be understood as the itinerant antiferromagnetism of heavy-quasiparticles without the gapping behavior.

Thermoelectric properties of the intermediate valent cerium intermetallic Ce2Ni3Si5 doped with Pd, Co, and Cu

Abstract The nickel site of Ce 2 Ni 3 Si 5 , which has the orthorhombic U 2 Co 3 Si 5 structure type, can be fully substituted with palladium and cobalt and partially substituted with copper. The volume of the lattice expands from 635 A 3 to 704 A 3 upon substitution with palladium while the volume contraction with cobalt and copper substitutions are much smaller. The thermopower of Ce 2 Ni 3 Si 5 is 32 μV/K at room temperature and increases to 60 μV/K at 40 K. This relatively high thermopower is decreased by substitution of the three metals studied here. The relatively temperature independent thermal conductivity of between 50 and 60 mW/Kcm for Ce 2 Ni 3 Si 5 is decreased in magnitude by substitution of the heavier palladium, especially at temperatures below 150 K, and is changed to typical metallic behavior by cobalt substitution. Upon cooling from room temperature, the electrical resistivity of Ce 2 Ni 3 Si 5 displays a broad plateau of 300 μΩcm until a precipitous drop below 120 K, indicative of coherence effects in the Kondo interactions between the cerium moments and conduction electrons. Copper and palladium substitutions result in a gradual reduction in the effects of cerium intermediate valence, whereas cobalt substitution drives the resistivity to metallic behavior but with a relatively large room temperature resistivity of 400 μΩcm.

Anisotropy and dense Kondo effect in CeRh 3B 2

The compound CeRh 3B 2 shows strong anisotropy both in transport and magnetic properties, but no apparent anomaly characteristic of Kondo effect was observed. Ce 3d core-level photoemission of CeRh 3B 2 and electrical resistivity of Ce 0.05La 0.95Rh 3B 2 revealed that CeRh 3B 2 is a dense Kondo lattice, Kondo effect being masked by strong interatomic exchange interaction.

Thermoelectric power and electrical resistivity of Ce(In1-xSnx)3 and (Ce1-xLaxIn3

Abstract The electrical resistivity of Ce(In 1- x Sn x ) 3 and (Ce 1- x La x )In 3 is found to have various behaviours depending upon the Ce 4f electron state, while the thermopower is found to have a common behaviour throughout the samples. The effects of the Ce 4f electron state on these two physical properties are discussed in connection with the Fermi liquid theory.

Kondo lattice mixed valence behavior in the Ce(SnxPb1−x)3 system

Measurements of the electrical resistivity versus x and temperature T, for 1.5≤T≤300 K for the fcc system Ce(SnxPb1−x)3 are reported. CeSn3 has been shown to be a strongly mixed valent system with an average occupation number of the Ce 4f level nf of ∼0.4 at low temperatures. The electrical resistivity for Ce(SnxPb1−x)3 is compared to that obtained for other Ce based mixed valent–trivalent systems and to the predictions of the Newns and Hewson theory. These comparisons suggest that Ce(SnxPb1−x)3 is mixed valent for x≳0.5 and the scaling of the resistivity supports the previous result that CeSn3 is strong mixed valent with nf≂0.4.