Electrical Performance Of Interconnects Research Articles

Development of a High Temperature Interconnect Solution as an Alternative to High Lead or Gold Content Solders

AbstractA collaborative research programme between project partners Microsemi, the National Physical Laboratory (NPL) and Gwent Electronic Materials (GEM), has successfully developed innovative materials specifically designed to offer an alternative for high Pb or Au content materials to increase the operating temperature of electronic assemblies. Currently, for electronic assemblies to operate at high temperature, they must use a high lead solder or a very expensive gold based solder to withstand these temperatures. The ELCOSINT project has developed an inexpensive lead-free alternative for joining high temperature electronics suitable for operating at temperatures above 250°C utilising standard surface mount assembly processes. This paper summarises the work undertaken by the authors to develop and better understand this new family of electrical interconnection materials. The project brought together a materials supplier (GEM – Gwent Electronic Materials), an end-user (MSL - Microsemi) and an technology research organisation (NPL – National Physical Laboratory) to jointly develop, test and implement in production, the solution based on silver-loaded silicone materials. This paper focuses on the testing and materials evaluation undertaken at NPL to determine the long term performance of these alternative materials including high temperature ageing up to 300°C, thermal cycling and damp heat testing. Details of the shear strength and electrical performance of interconnects between the substrates and components during the test regimes are given. The manufacturing process is outlined including details of the test vehicles utilised. The processing temperature for the conductive adhesive is 250°C which offers additional advantages in potential improvements in component and substrate reliability compared to soldered solutions which would typically be processed at temperatures above 300°C.

Electrical performance of interconnects in polyimide-copper thin-film multilayers on ceramic substrate

Thin-film multilayer substrate technology with dielectric layers made of polyimide resin requires openings on the ground plane for the outgassing of the resin. This paper describes a full electrical characterization of transmission lines in a multichip module based on thin-film multilayer on ceramic. Both time and frequency domain methods were used for the experimental characterization. Measured and modeled performances are compared for three kinds of ground opening geometries.