Electrical Characteristics Research Articles

Optimization of the Fabrication Process for Phototransistors With IGZO/TiOx Bilayer Thin Films to Improve Electrical and Photoresponse Characteristics

Optimization of the Fabrication Process for Phototransistors With IGZO/TiO_x Bilayer Thin Films to Improve Electrical and Photoresponse Characteristics

Enhanced Photovoltaic Efficiency through 3D-Printed COC/Al₂O₃ Anti-Reflective Coversheets

In the past few years, there has been a considerable growth in the utilization of solar cells to produce electrical power to fulfil the growing worldwide energy demands. An optical loss is a crucial factor that impacts the performance of the photovoltaic conversion process. This loss occurs when incoming sunlight is reflected back on the outer layer of the photovoltaic cells. The application of antireflective materials on the photovoltaic substrates can enhance the absorption of sunlight and minimize the reflection. Currently, there is no ideal anti-reflective coating for solar cells that can allow the transmission of sunlight without any reflection. In this research, a transparent cyclic-olefin-copolymer (COC) was used to fabricate anti-reflection (AR) coversheet by fused deposition modelling process (3D printing). Further, the aluminium oxide Al2O3 powder was added at the proportions of 1wt%, 2wt%, 3wt%, and 4wt% to the COC polymer to increase the anti-reflection characteristics. The structural, morphological, mechanical (tear strength), electrical and temperature characteristics were studied. The performance of COC with aluminium oxide (COCA) coversheets was evaluated, and the findings revealed a considerable increment in power conversion efficiency (PCE) of 17.21% (sunlight exposure) and 18.34% (neodymium light) for COCA3 coversheets. As seen, the COCA3 sample exhibit lower electrical resistance of 3.88 ×10-3 Ω cm, carrier concentration (36.91×1020 cm-3) and higher hall mobility (13.67 cm2/Vs). The findings from the investigations demonstrated that the utilization of COC with Al2O3 powder (COCA) can be a suitable antireflective coversheet material for boosting the performance of polycrystalline silicon photovoltaic cells.

Modified Complex Electrical Resistivity Technique: Applications to Saturated and Unsaturated Soils

Abstract Direct current (DC) electrical resistivity is a common laboratory soil characterization method to support geotechnical infrastructure design and to supplement site investigations. The complex electrical resistivity method has the potential to provide additional electrical soil properties to enhance electrical soil characterization. Both methods are conventionally performed under fully saturated soil conditions; however, many environments exist where soil is not fully saturated, such as ballast structure supporting railways. In this study, a new experimental setup featuring a current enhancing agent (agar) for complex electrical resistivity testing is evaluated by testing five different soil specimens reconstituted at saturated and unsaturated conditions. Results showed that the new experimental setup is valid and can be used to obtain repeat measurements, particularly for specimens reconstituted in the unsaturated conditions where the traditional DC electrical resistivity setup yields results that are unreliable. This is one of the very few studies where tolerances for triplicate specimens are reported to establish differences in measurements from sample preparation versus discernable variability between different geomaterials. Additionally, all results are supported by a Cole-Cole model. The results show that the additional data collected in a complex electrical resistivity test can be used to differentiate different soil types that are ambiguous with the DC electrical resistivity method. The additional data have the potential to more fully characterize the electrical properties of saturated and unsaturated soils, as well as to help distinguish unique geophysical signatures of various geomaterials to enhance a geophysical site investigation for identifying soil variability in the subsurface.

Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives

In this study, Y2O3-based resistive random-access memory (RRAM) devices with a mono-ethanolamine (MEA) stabilizer fabricated using the sol–gel process on indium tin oxide/glass substrates were investigated. The effects of MEA content on the structural, optical, chemical, and electrical characteristics were determined. As the MEA content increased, film thickness and crystallite size decreased. In particular, the increase in MEA content slightly decreased the oxygen vacancy concentration. The decreased film thickness decreased the physical distance for conductive filament formation, generating a strong electric field. However, owing to the lowest oxygen vacancy concentration, a large electrical field is required. To ensure data reliability, the endurance cycles across several devices were measured and presented statistically. Additionally, endurance performance improved with the increase in MEA content. Reduced oxygen vacancy concentration can successfully suppress the excess formation of the Ag conductive filament. This simplifies the transition from the high- to the low-resistance state and vice versa, thereby improving the endurance cycles of the RRAM devices.

3D target definition and initial results from the electroanatomic substrate-guided stereotactic ablative radiotherapy for refractory ventricular tachycardia (ELSTAR-VT)

Abstract Background/introduction Noninvasive stereotactic radiotherapy (STAR) is an emerging transmural ablative therapy for refractory ventricular tachycardia (VT). Delineation of the arrhythmogenic gross target volume (GTV) relies on electrical (exit and isthmus) VT characteristics and anatomical scar detailing. 17-AHA segmental approaches or eyeballing techniques are adopted to transfer the GTV to the treatment planning CT. An individualized 3D GTV delineated with ADAS3D based on the areas of interest of each modality could lead to a smaller GTV compared to 17-AHA segmental approaches. Purpose We investigated whether our workflow using ADAS3D for the delineating of the GTV renders smaller GTV compared to 17-AHA segmental approaches whilst remaining effective for VT treatment during follow-up. Methods We targeted 3D-personalized GTV with STAR in patients with refractory VT in structural heart disease. Electroanatomical detailing was achieved by combining high-resolution invasive and noninvasive (ECG imaging during noninvasive programmed stimulation) mapping, combined with wall thickness analyses by cardiac CT. After coregistration in ADAS3D, a 3D DICOM-radiation therapy file including the delineated target volume was generated and transferred into the free-breathing and respiration-corrected 4D CT scan. Standard STAR using a single-fraction of 20-25 Gy was applied. We compared conventional (17-AHA segmental approaches) versus 3D-based GTV demarcation, and assessed VT burden and procedural safety. Results From January 2023 to February 2024 STAR was successfully performed in three patients (all male, mean age 73±1 years, two ischemic cardiomyopathy, one laminopathy) with persistent VT despite ≥2 catheter-based (endocardial/epicardial) ablation procedures. The 3D-derived GTVs showed a statistical trend towards smaller volumes compared to conventional segmental delineation (11±4 versus 21±3 cm3, p=0.07). VT burden and ICD therapy was reduced by 100% over 9 patients-months (8-week blanking period). No acute or subacute adverse events occurred. One patient died of progressive heart failure. Conclusion 3D-individualized target volume annotation may hold promise for effective and safe STAR employment.ELSTAR workflow

Vector field heterogeneity as a novel omnipolar mapping metric for functional substrate characterization in scar-related ventricular tachycardias

Abstract Background Identification of functionally critical sites to target for ablation in scar-related VT during substrate mapping remains challenging. Vector Field Heterogeneity (VFH) is a novel omnipolar metric to quantify locally heterogeneous propagation patterns. Objective Assess the diagnostic value of VFH for characterizing abnormal propagation patterns during ventricular substrate mapping and compare between sites of VT isthmus, low voltage bystander areas (LVA) and normal voltage areas (NVA). Methods High-density substrate maps and VT activation maps acquired with a 16-pole grid catheter in patients with scar-related VT were retrospectively reviewed. Based on the VT activation maps with either entrainment and/or VT termination with RF ablation to confirm critical sites, the correlating substrate maps were segmented into sites corresponding to isthmus-site, LVA (omnipolar voltage <1.5mV) and NVA (>1.5mV). To compute the VFH, contact mapping data including all EGMs of each grid-catheter acquisition (16 unipols) was exported and processed offline. From each of the 4×4 electrode array acquisitions, omnipolar-derived vector maps of the directions of electrical propagation for recorded sites were estimated using an orientation-independent cross-clique configuration of 4 adjacent unipols, respectively, resulting in 9 vectors with a spatial resolution of 1.4mm2 each. The angle between each vector and horizontal bipole was assessed and compared between neighbouring vectors using finite differences to derive a VFH value per 2x2 EGM clique as a quantitative metric of local heterogeneity ranging from 0 (perfect planar wave) to 1 (maximal disorganisation - "chaos"). The VFH metric was estimated for each segment of the substrate map and compared against each other. Results Nine patients with scar related VT were included (100% male, age 62±20y, ischemic 66.7%, LVEF 36±16%). On average 3.5 VTs (1-8) were induced per case. Avg. substrate map point count was 3825±3190. Computed median VFH metric at sites corresponding to VT isthmus was 0.58±0.30, LVA bystander 0.47±0.39, NVA sites 0.20±0.34. VFH at isthmus-sites was statistically significant higher (i.e. more disorganised) than at LVA bystander sites (p<0.01). VFH in NVA was significantly lower (i.e. more organised) compared to isthmus and LVA sites (p<0.01, respectively). Median omnipolar voltage at isthmus sites was 0.16±0.27mV compared to LVA bystander 0.22±0.36mV (p=0.0816) and NVA 2.97±3.38mV (p<0.01). Conclusion VFH is a promising novel omnipolar mapping metric for electrical substrate characterisation in scar related VTs. VFH mapping identified a quantifiable and significant increase in electrical heterogeneity at sites corresponding to the critical isthmus compared to LVA bystander and normal voltage sites. VFH may provide new insights in the arrhythmogenicity of scar tissue and support more specific functional mapping strategies to identify targets for ablation without the need to induce VT.

Enhanced detection performance based on a differential ME sensor with strong suppression of vibration interference

Magnetoelectric (ME) sensors have enormous potential for detecting weak magnetic fields because of their high sensitivity, low power consumption, compact size and, low cost. However, inevitable vibration interference limits their application in practical environments, especially in the case of mobile platform mounting. Here, we propose a differential ME sensor, consisting of PZT macro-fiber composites (MFCs) and Metglas laminates. The differential ME sensor has two output terminals with weak mutual mechanical coupling and works in longitudinal vibration mode. MFC cores are polarized in parallel mode to guarantee their consistency of electric characteristics and reversed bias field is provided by attached magnets. Experimental results show that the differential-mode response amplitudes have a gain of −17.6 dB for low-frequency vibration at 2 Hz and ∼6.2 dB for an applied magnetic field at 3 Hz, in comparison with the single-ended mode. In addition, our proposed ME sensor also has a low inherent equivalent magnetic noise of 18.3 pT/√Hz at 1 Hz. Finally, a target detection experiment in the presence of heavy lab noise and strong vibration interference is conducted and the improved detection performance of the proposed differential ME sensor is proved.

Fabrication and High Dielectric Properties of Sandwich-Structured Ba0.6Sr0.4TiO3/Polyvinylidene Fluoride Layered Composites with Multiscale Parallel Interfaces.

Ba0.6Sr0.4TiO3/polyvinylidene fluoride (BST/PVDF) dielectric functional composites have been widely used in flexible wearable devices, capacitors, and energy storage devices. In addition to the ceramic phase type, polymer matrix type, composition, and interfacial connectivity of BST/PVDF composite materials, their morphology also significantly influences their electrical characteristics. Therefore, herein, sandwich-structured BST/PVDF layered composites were designed and prepared via tape-casting processing using different types of BST fillers [i.e., formless zero-dimensional (0D)-BST, rod-like one-dimensional (1D)-BST, and plate-like two-dimensional (2D)-BST]. The microstructures and electrical characteristics of sandwich-structured BST/PVDF composites were studied in relation to the BST morphology. The effects of the internal mechanisms of different interfacial models on the breakdown strength of BST/PVDF composites were discussed. According to our findings, unlike the 0D-BST and 1D-BST powders, 2D-BST powders form multiscale parallel interfaces in sandwich-structured composites due to their unique lamella-like morphology, which enhances the breakdown strength of sandwich-structured composites. Sandwich-structured BST/PVDF composites containing 2D-BST powders exhibit good electrical characteristics with an energy storage density of 19.71 J/cm3, an energy storage efficiency of 85.3%, a dielectric constant of 30.4 (1 kHz), a dielectric loss of 0.036 (1 kHz), and a dielectric tunability of 93.2%. This study provides a method for preparing functional composites with high dielectric tunability and high energy storage characteristics.

Anisotropic piezoresistive response of 3D-printed pressure sensor based on ABS/MWCNT nanocomposite

Nanocomposites based on carbon nanotubes (CNTs) are suitable for sensors, due to matrix ability to incorporate nanotube properties. Thus, we developed a low-cost, nanostructured poly(acrylonitrile-butadiene-styrene) (ABS) polymer piezoresistive sensor produced by additive manufacturing. For this, solution layers of acetone, dimethylformamide and CNTs functionalized with carboxylic acid were pulverized on an ABS substrate using an aerograph. Electrical characterization revealed an anisotropic piezoresistive response of the material, induced by the printing lines direction. Field Emission Gun-Scanning Electron Microscopy showed the nanostructured film spreading after five layers of CNTs as well as the random entanglement of nanotubes on parallel and perpendicular 3D-printed ABS substrates. Raman spectroscopy indicated compression and p-type doping of CNTs in interaction with the polymer, as seen mainly by the blueshift of the G and 2D subbands. The results show that the material is promising for pressure sensors, with potential applications in robotic haptic feedback systems.

Device simulation study of multilayer MoS2 Schottky barrier field-effect transistors

Molybdenum disulfide (MoS2) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS2field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturallyn-doped MoS2is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS2Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find thatp-type MoS2SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2device. Introducing a dual-split gate geometry, the MoS2SBFETs can further operate in four distinct configurations:p - p,n - n,p - n, andn - p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

Enhanced optoelectronic characteristics of La-doped ZnO and its compatibility with Cs-doped MAPbI3 perovskite absorber material

Abstract The present study investigates the structural, electrical and optical characteristics of pristine and lanthanum (La)-doped zinc oxide electron transport layers (ETLs) fabricated by the sol gel method and their compatibility with Cs0.10MA0.90Pb(I0.9Br0.10)3 absorber layer for perovskite solar cells. All the ETLs were deposited under same deposition conditions, with the only difference in La percentage in the precursor solutions, ranging from 0 to 6%. X-ray diffraction (XRD) analysis demonstrated the presence of crystalline ZnO thin films and the absence of any impurity phases after La-doping. The calculated crystallite size, determined using Scherrer’s equation, increased from 11.13 to 21.76 nm after the introduction of dopant. The doping with 4% La led to the decrease in the optical bandgap from 3.32 eV of pristine ZnO to 3.23 eV. SEM analysis revealed better morphology of perovskite/4% La:ZnO specimen, which facilitated the absorbance and reduced the charge carrier recombination. It also exhibited superior resilience towards moisture and humidity which will eventually contribute to the development of more stable and efficient planar perovskite solar cells (PCSs).

Study on transient electric shock characteristics between human body and metal clothes hanger on residential platform near UHV AC transmission lines

AbstractWith the development of ultra‐high‐voltage (UHV) and extra‐high‐voltage transmission lines in China, the transmission lines are gradually approaching the residential areas. The phenomenon of induced electric shock caused by electrostatic induction effect can cause dissatisfaction and complaints from nearby residents. In this paper, a full‐size steel‐framed residential test platform was constructed near a 1000‐kV UHV alternating current (AC) transmission line, the transient shock characteristics of human bodies and metal hangers in different scenarios was investigated, then the relationship between transient shock energy and subjective perception of the human body was discussed. In addition, the shielding effect of shielding wires for transient electric shock situations is analyzed. It was found that the worst‐case scenario occurred when the grounded human body came into contact with the insulated metal clothes hanger, even eliciting a noticeable sensation of pain. In addition, increasing metal shielding wire number has a significant effect on weakening induced electric shocks.

Impact of bias stress and endurance switching on electrical characteristics of polycrystalline ZnO-TFTs with Al2O3 gate dielectric

Abstract This study experimentally investigates electrical characteristics and degradation phenomena in polycrystalline zinc oxide thin-film transistors (ZnO-TFTs). ZnO-TFTs with Al2O3 gate dielectric, Al-doped ZnO (AZO) source–drain contacts, and AZO gate electrode are fabricated using remote plasma-enhanced atomic layer deposition at a maximum process temperature of 190 °C. We employ positive bias stress (PBS), negative bias stress (NBS), and endurance cycling measurements to evaluate the ZnO-TFT performance and examine carrier dynamics at the channel-dielectric interface and at grain boundaries in the polycrystalline channel. DC transfer measurements yield a threshold voltage of −5.95 V, a field-effect mobility of 53.5 cm2/(V∙s), a subthreshold swing of 136 mV dec−1, and an on-/off-current ratio above 109. PBS and NBS measurements, analysed using stretched-exponential fitting, reveal the dynamics of carrier trapping and de-trapping between the channel layer and the gate insulator. Carrier de-trapping time is 88 s under NBS at −15 V, compared to 1856 s trapping time under PBS at +15 V. Endurance tests across 109 cycles assess switching characteristics and temporal changes in ZnO-TFTs, focusing on threshold voltage and field-effect mobility. The threshold voltage shift observed during endurance cycling is similar to that of NBS due to the contrast in carrier trapping/de-trapping time. A measured mobility hysteresis of 19% between the forward and reverse measurement directions suggests grain boundary effects mediated by the applied gate bias. These findings underscore the electrical resilience of polycrystalline ZnO-TFTs and the aptitude for 3D heterogeneous integration applications.

Enhanced Crystallinity of SrTiO3 Films on a Silicon Carbide Substrate: Structural and Microwave Characterization

Thin films of strontium titanate, which reveal high structure quality and tunable properties prospective for microwave applications at room temperature, were grown on a semi-insulating silicon carbide substrate using magnetron sputtering for the first time. The films’ growth mechanisms were studied using medium-energy ion scattering, and the films’ structures were investigated using X-ray diffraction. The electrical characteristics of planar capacitors based on strontium titanate films were measured at a frequency of 2 GHz using a high-precision resonance technique. It is shown that the tendency to improve the crystalline structure of strontium titanate film with an increase in the substrate temperature is most pronounced for films deposited at elevated working gas pressure under low supersaturation conditions. Planar capacitors formed on the basis of oriented SrTiO3 films on silicon carbide showed tunability n = 36%, with a loss tangent of 0.008–0.009 at a level of slow relaxation of capacitance, which is significantly lower than the data published currently regarding planar tunable ferroelectric elements. This is the first successful attempt to realize a planar SrTiO3 capacitor on a silicon carbide substrate, which exhibits a commutation quality factor more than 2500 at microwaves.

A Novel Method for Obtaining the Electrical Model of Lithium Batteries in a Fully Electric Ultralight Aircraft

This article introduces a novel approach for developing an electrical model of the lithium batteries used in an electric ultralight aircraft. Currently, no method exists in the technical literature for accurately modeling the electrical characteristics of batteries in an electric aircraft, making this study a valuable contribution to the field. The proposed method was validated with an all-electric ultralight aircraft designed and constructed at the Pascual Bravo University Institution. To build the detailed model, a kinematic analysis was first conducted through takeoff tests, where data on the speed, acceleration, time, and distance required for takeoff were collected, along with measurements of the current and power consumed by the batteries. The maximum speed and acceleration of the aircraft were also recorded. These kinematic results were obtained using two batteries made from Samsung INR-18650-35E lithium-ion cells, and different wing configurations of the aircraft were analyzed to assess their impacts on the battery energy consumption. Additionally, the discharge cycles of the batteries were evaluated. In the second phase, laboratory tests were performed on the individual battery cells, and the Peukert coefficient was estimated based on the experimental data. Finally, using the Peukert coefficient and the kinematic results from the takeoff tests, the electrical model of the battery was fine tuned. This model allows for the creation of charging and discharging equations for ultralight lithium batteries. With the final electrical model and energy consumption data during takeoff, it becomes possible to determine the energy usage and flight range of an electric aircraft. The model indicated that the aircraft did not require a long distance to takeoff, as it reached the necessary takeoff speed in a very short time. The equations used to simulate the discharge cycles of the batteries and lithium cells accurately described their energy capacities.

Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors

ZnO thin films were deposited using RF sputtering by varying the argon:oxygen gas flow rates and substrate temperatures. Structural, optical and electrical characterization of ZnO thin films were systematically carried out using X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV–visible spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Hall measurements. Film deposited at room temperature and annealed at 300 °C exhibited low O2 incorporation with localized defects and a high percentage of Zn interstitials. A large crystalline size and fewer grain boundaries resulted in a high Hall mobility of 46.09 cm2/V-s Deposition at higher substrate temperatures resulted in improvement in O2 incorporation through the annihilation of localized defects and decrease in oxygen vacancies and Zn interstitials. Urbach tails within the bandgap were identified using the absorption spectrum and compared with the % defects from XPS. Bottom-gate thin-film transistors were subsequently fabricated on a SiO2/p-Si substrate using the combination of RF sputtering, wet etching and photolithography. Variation in the substrate temperature showed performance enhancement in terms of the leakage current, threshold voltage, sub-threshold swing and ION/IOFF ratio. Thin-film transistor (TFT) devices deposited at 300 °C resulted in an O2-rich surface through chemisorption, which led to a reduction in the leakage current of up to 10−12 A and a 10-fold reduction in the sub-threshold swing (SS) from 30 V to 2.8 V. Further TFT optimization was carried out by reducing the ZnO thickness to 50 nm, which resulted in a field-effect mobility of 1.1 cm2/V-s and ION/IOFF ratio of 105.

Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics

We proposed a novel measurement method and system to measure the electrical characteristics of non-patterned semiconductor films to estimate the final device’s properties. The proposed method is based on measuring bottom-gate structure thin-film transistor (TFT) using the probe pins as source and drain electrodes. We carefully designed the array structure and material of the probe pin to effectively detect extremely low-level currents without patterned electrodes on the semiconductor film. The contact pressure was also carefully controlled through continuous monitoring using an implemented pressure sensor to ensure the reliability and reproducibility of the measured data. In addition, we developed a method of extracting device parameters, such as the threshold voltage and field-effect mobility, from the measured data, considering the geometric factor of the proposed method. Comparative analysis between the measurement results of the film sample using the proposed system and that of the final TFT sample exhibited similar results with slight deviations. Furthermore, the proposed system provided similar results under repetitive measurements. Consequently, the proposed method and system successfully demonstrated the estimation of the final TFT’s properties by measuring the electrical characteristics of the non-patterned semiconductor film with excellent reliability, highlighting the possibility of effectively reducing costs for development and fabrication.

Synthesis of CdTe nanoparticles by PVD Technique and Study their Physical Properties

Nano-crystalline CdTe films were coated on a glass substrate by vacuum evaporation (PVD) technique, with the annealed temperature at (25, 100, 150, and 200 °C). The samples were examined by Uv‒visible instrument to investigate the transmittance and absorption. The dependency of the absorption coefficient (α) on the wavelength has been investigated. The X-ray diffraction revealed that cubic crystalline was obtained and the peak intensity increased as the temperature increased. The crystallite size increased during grans growth when annealed temperature increased. The estimated energy gaps of the CdTe films were 1.86, 1.87, 1.85, and 1.84 eV, due to the differences in particle sizes. Electrical characteristics have been made to detect the resistivity and conductivity and it was found that the resistivity changes directly with the increase of the energy gap and inversely with the increase in the conductivity of the CdTe films. The surface morphology was homogenous and very smooth surfaces were detected.

Discharge Modes Evolution Characteristics of Metal Particle on the Spacer Surface in AC Gas Insulated Switchgear

Abstract Flashover faults on gas insulated switchgear (GIS) insulators induced by metal particles occur frequently. Previous studies have obtained the characteristics of partial discharges (PDs) induced by metal particles on spacer surfaces, but these characteristics cannot explain the detection failure of ultra-high frequency (UHF) online monitoring. To enable further study of the PD characteristics induced by surface metal particles, the space electric field and a very-high-sensitivity pulse current (PC) measurement system were established. The electric field and PC characteristics of a PD induced by metal particle on the spacer surface of a 126 kV GIS were obtained. Two PD modes were found to be induced by surface metal particles. In addition to the typical pulse discharge (TP), there is a micro-discharge group (MG) mode with low apparent charge and long duration. The average apparent charge of the MG mode is approximately one-tenth of that of the TP at 0.4 pC. Its duration may extend to the millisecond level, causing significant distortion of the spatial electric field while hardly producing UHF signals. Moreover, increasing the applied voltage will increase the proportion of the MG within the total discharge, where this proportion can reach more than 90% before flashover, and the proportion of the discharge pulses that generates UHF signals is as low as 1%. The MG generation mechanism is analysed, the ion group stranded on the spacer surface by the TP changes the local electric field at the tip of the metal particle, which reduces the development length and apparent charge of the MG. Low apparent charge is cleared easily by the background electric field and thus the discharge interval is very short. This paper can provide an important basis for revealing the mechanism of GIS spacer surface discharge induced by metal particles and solving the effectiveness of PD monitoring devices.

Virtual Fabrication of 14nm Gate Length n-Type Double Gate MOSFET

Due to Moore's law, it is that predicted the channel length of a metal-oxide-semiconductor Field Effect Transistor (MOSFET) will tend to shrink from the submicron to the nanoscale size. Thus, precision in the manufacturing process has become crucial. This study describes the virtual fabrication as well as the electrical characteristics of a 14nm NMOS double gate with a bilayer graphene/high-K/metal gate. In this device, Hafnium Dioxide (HfO2) is employed as a high-k material, and Tungsten Silicide (WSix) is used as a metal gate. Several Silvaco TCAD Tools, including ATHENA and ATLAS, were utilized in the fabrication and simulation of the device, respectively. According to the simulation results, the optimal threshold voltage (VTH), drive current (ION), and leakage current (IOFF) and subthreshold slope (SS) values are 0.2059 V, 797.5650 μA/μm. 29.5794 nA/μm, and 89.1712x10-3 V respectively. The findings of this research showed that the efficiency of this 14nm double gate n-type MOSFET device is satisfactory because the threshold voltage and leakage current parameters are in accordance with ITRS 2013, and that it may have been utilized as a utility man in future modelling and optimization efforts.