Electrical Transport Measurements Research Articles

Pressure-induced superconductivity and phase transition in PbSe and PbTe

Abstract The IV-VI semiconducting chalcogenides are a large material family with distinct physical behavior. Here, we systematically investigate the effect of pressure on the electronic and crystal structure in PbSe and PbTe by combining high-pressure electrical transport and synchrotron x-ray diffraction (XRD) measurements. The resistivity of PbSe and PbTe changes dramatically under high pressure and a non-monotonic evolution of ρ(T) is observed. Both PbSe and PbTe are found to undergo semiconductor-metal transition upon compression and show superconductivity under higher pressure. The structural evolutions from the Fm-3m to Pnma phase and then to the Pm-3m phase in PbSe are verified by the x-ray diffraction. The present findings reveal the internal correlation between the structural evolution and the physical properties in lead chalcogenides.

Critical current degradation of commercial REBCO coated conductors under thermomechanical loads

Abstract The process to obtain a superconducting joint between Coated Conductors (CCs) involves the simultaneous application of temperature and transverse compressive pressure to promote the joining of the two adjacent REBCO layers. We performed experiments to simulate this procedure by subjecting samples from commercial CCs to different combinations of pressure, and temperature. The objective was to understand the effects of the thermomechanical cycles on the critical current (Ic) and, therefore, determine the upper limit for the achievable current in a superconducting joint between CCs. We observed a reduction of the Ic across the investigated parameter range that is accelerated at higher temperatures and pressures. For instance, the average reduction of Ic measured at 77 K in self-field varied from 45% to 90% when increasing the pressure for samples heated at 820 °C, as compared to samples heated at the same temperature without applied pressure. As a complement to electrical transport measurements, we carried out TEM and EDX investigations to study the relation between the degradation of Ic and alterations in the microstructure of REBCO. These analyses indicate that the concurrent application of temperature and pressure accelerates the decomposition of the REBCO phase. The EDX data suggests that the decomposition products could correspond with a peritectic reaction of the REBCO occurring at lower temperatures, accelerated by the presence of an external pressure. This early decomposition occurs in localized areas of the REBCO layer, constricting the available cross-section for current flow and thereby diminishing the critical current.

Giant Uniaxial Magnetocrystalline Anisotropy in SmCrGe3.

Magnetic anisotropy is a crucial characteristic for enhancing the spintronic device performance. The synthesis of SmCrGe3 single crystals through a high-temperature solution method has led to the determination of uniaxial magnetocrystalline anisotropy. Phase verification was achieved by using scanning transmission electron microscopy (STEM), powder, and single-crystal X-ray diffraction techniques. Electrical transport and specific heat measurements indicate a Curie temperature (TC) of approximately 160 K, while magnetization measurements were utilized to determine the anisotropy fields and constants. Curie-Weiss fitting applied to magnetization data suggests the contribution of both Sm and Cr in the paramagnetic phase. Additionally, density functional theory (DFT) calculations explored the electronic structures and magnetic properties of SmCrGe3, revealing a significant easy-axis single-ion Sm magnetocrystalline anisotropy of 16 meV/fu. Based on the magnetization measurements, easy-axis magnetocrystalline anisotropy at 20 K is 13 meV/fu.

Modulating the Electrical Transport in Superconducting NbC Crystals by Fractal Morphology.

The self-similar fractal morphology mediated by nonequilibrium processes is widely observed in low-dimensional materials grown by various techniques. Understanding how these fractal geometries affect the physical and chemical properties of materials and devices is crucial for both fundamental studies and various applications. In particular, the interplay between superconducting phase fluctuations and disorder can give rise to intriguing phenomena depending on the dimensionality. However, current experimental studies on low-dimensional superconductors are limited to two- and one-dimensional systems, leaving fractional dimensional systems largely unexplored. Here, we use chemical vapor deposition to successfully synthesize ultrathin NbC crystals with a well-defined fractal geometry at the nanoscale. By performing electrical transport measurements, we find that both the superconducting and normal-state properties are strongly affected in the fractal samples, where the intrinsic and geometric disorder is induced. In contrast to the 2D crystal, the fractal NbC crystals show a significant low-temperature resistive upturn before the onset of superconducting transition, which can be attributed to the disorder-enhanced electron-electron interaction effect. From transport data analysis, we demonstrate that the superconducting transition in NbC is correlated to the strength of disorder and the fractional dimensions, revealing that nanoscale fractal structures can significantly modify the electronic properties of low-dimensional superconductors. Our work paves the way for the explorations of mesoscopic transport and intriguing superconducting phenomena in fractional dimensions.

Structural Phase Transitions and Metallization in Zirconium Disulfide (ZrS2) under High Pressure.

The high-pressure study on zirconium disulfide (ZrS2) has been conducted up to ∼33.9 GPa by using in-situ synchrotron X-ray diffraction at room temperature and electrical transport measurements, aiming to investigate the pressure-induced structural phase transitions and the metallization of the material. The experiments indicated that a progressive structural evolution occurs as the sequence below: hexagonal (space group (SG): P3̅m1) → monoclinic (SG: P21/m) started at 2.8 GPa → orthorhombic (SG: Immm) started at 9.9 GPa → tetragonal (SG: I4/mmm) started at 30.4 GPa. The lattice parameters and bulk modulus of the phases at high pressure are calculated. The decompression results demonstrate the coexistence of ZrS2 stability in monoclinic (SG: P21/m) and orthorhombic (SG: Immm) structures. The electrical transport results demonstrate a significant enhancement in the conductivity of ZrS2 at 8 GPa, and metallization occurs at ∼29.8 GPa. Combined with XRD results, the metallization is coincident with the phase transition to the tetragonal (SG: I4/mmm) structure. Our study presents a more precise phase transition sequence, calculates the cell parameters and bulk modulus of ZrS2 under high-pressure conditions based on experimental results, and confirms that metallization is induced by the structural phase transition. These findings provide an experimental basis for the further utilization of transition metal sulfides (TMDs) under high pressure.

Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures.

The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO2/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω-1 to 0.0007 Ω-1 under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cm2V-1s-1 to 400 cm2V-1s-1 and electron mobility decreased from 800 cm2V-1s-1 to 200 cm2V-1s-1. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices.

Pressure-induced anomaly of transport properties and structural transition in layered ferromagnetic metal TlCo2S2

In this work, the structural and transport properties of ferromagnetic metal TlCo2S2 with ThCr2Si2-type crystal structure are systematically studied using high-pressure synchrotron x-ray powder diffraction, electrical transport measurements and first-principles calculations. All the resistances of TlCo2S2 between 1.4 GPa and 5.2 GPa exhibit an upturn at TS and an obvious hysteresis is observed below TS when measured in the cooling and heating processes. As the pressure increases, TS gradually increases and the resistances display a metallic behavior without any anomaly in the whole temperature region above 5.2 GPa, indicating that a possible structural phase transition occurs at TS and is beyond the room temperature above 5.2 GPa. High-pressure x-ray diffraction measurements combined with crystal structure prediction indicate that at room temperature TlCo2S2 undergoes a structural phase transition from a tetragonal phase (I4/mmm) to an orthorhombic structure (Bmab) at Pc ≈6.8 GPa, which is consistent with the results of the resistances under high pressure. Our results indicate that a first-order structural phase transition of TlCo2S2 is induced by high pressure and then results in the anomaly of the electrical transport properties.

Observation of Enhanced Long-Range Ferromagnetic Order in B-Site Ordered Double Perovskite Oxide Cd2CrSbO6.

A B-site ordered double perovskite oxide Cd2CrSbO6 was synthesized under high-pressure and high-temperature conditions. The compound crystallizes to a monoclinic structure with a space group of P21/n. The charge configuration is confirmed to be that of Cd2+/Cr3+/Sb5+. The magnetic Cr3+ ions form a tetrahedral structural frustrated lattice, while a long-range ferromagnetic phase transition is found to occur at TC = 16.5 K arising from the superexchange interaction via the Cr-O-Cd-O-Cr pathway. Electrical transport measurements indicate that Cd2CrSbO6 is an insulator that can be described by the Mott 3D variable range hopping mechanism. First-principles calculations reproduce well the ferromagnetic and insulating ground state of Cd2CrSbO6 with an energy band gap of 1.55 eV. The intrinsic ferromagnetic insulating nature qualifies Cd2CrSbO6 as a promising candidate for possible spintronics applications.

Sr-Doping-Modulated Metal-Insulator Transition in NdNiO3 Epitaxial Films

Abstract Perovskite-structured nickelates, ReNiO3 (Re = rare earth), have long garnered significant research interest due to their sharp and highly tunable metal-insulator transitions (MITs). Doping the parent compound ReNiO3 with alkaline earth metal can substantially suppress this MIT. Recently, intriguing superconductivity has been discovered in doped infinite-layer nickelates (ReNiO2), while the mechanism behind A-site doping-suppressed MIT in the parent compound ReNiO3 remains unclear. To address this problem, we grew a series of Nd1−x Sr x NiO3 (NSNO, x = 0–0.2) thin films and conducted systematic electrical transport measurements. Our resistivity and Hall measurements suggest that Sr-induced excessive holes are not the primary reason for MIT suppression. Instead, first-principles calculations indicate that Sr cations, with larger ionic radius, suppress breathing mode distortions and promote charge transfer between oxygen and Ni cations. This process weakens Ni–O bond disproportionation and Ni2+/Ni4+ charge disproportionation. Such significant modulations in lattice and electronic structures convert the ground state from a charge-disproportionated antiferromagnetic insulator to a paramagnetic metal, thereby suppressing the MIT. This scenario is further supported by the weakened MIT observed in the tensile-strained NSNO/SrTiO3(001) films. Our work reveals the A-side doping-modulated electrical transport of perovskite nickelate films, providing deeper insights into novel electric phases in these strongly correlated nickelate systems.

Critical current density and AC magnetic susceptibility of high-quality FeTe0.5Se0.5 superconducting tapes

Iron telluride-selenium superconducting materials, known for their non-toxicity, ease of preparation, simple structure, and high upper critical fields, have attracted much research interest in practical application. In this work, we conducted electrical transport measurements, magneto-optical imaging, and AC magnetic susceptibility measurements on FeTe0.5Se0.5 superconducting long tapes fabricated via reel-to-reel pulsed laser deposition. Our transport measurements revealed a high critical current density that remains relatively stable even with increasing external magnetic fields, reaching over 1 × 105 A/cm2 at 8 K and 9 T. The calculated pinning force density indicates that normal point pinning is the primary mechanism in these tapes. The magneto-optical images demonstrated that the tapes show homogeneous superconductivity and uniform distribution of critical current density. The AC magnetic susceptibility measurements also confirmed their strong flux pinning nature of withstanding high magnetic field. Based on these characteristics, FeTe0.5Se0.5 superconducting tapes show promising prospects for applications under high magnetic field.

Effect of thermal annealing on the average and local structure of superconducting polycrystalline NbRe films

Abstract NbxRe1−x is a non-centrosymmetric superconductor recently realized in thin film form. The access to the basic physics that governs this material is hindered by the polycrystalline structure of the films which consist of grains of small dimensions. In these conditions, films are not decisive in revealing the nature of the superconducting order parameter, and, in particular, the possible presence of a spin-triplet component. In this work, post-deposition annealing procedures were performed to improve the crystalline quality of the as-grown films. As determined by X-ray diffraction measurements, by tuning the annealing process, it was possible to increase the crystalline size from 1-2 nm up to several nanometers, beyond the values of the superconducting coherence length. Pair distribution function analyses revealed the non-centrosymmetric crystal structure of the treated NbRe films. Finally, electrical transport measurements, performed to study the relationship between structural and transport properties of the samples, showed an improved metallicity and a reduction of the superconducting critical temperature after the thermal treatment. This last result can be reasonably ascribed, for instance, to oxygen contamination, modification of the electronic density of states at the Fermi level, or change in the electron-phonon coupling. The results of this work are useful to realize films for future experiments meant to access nature of the superconducting order parameter.

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb1-xSnxTe Nanowires with Strain-Tunable Ferroelectric Phase Transition.

The Pb1-xSnxTe family of compounds possess a wide range of intriguing and useful physical properties, including topologically protected surface states, robust ferroelectricity, remarkable thermoelectric properties, and potential topological superconductivity. Compared to bulk crystals, one-dimensional (1D) nanowires (NWs) offer a unique platform to enhance the functional properties and enable new capabilities, e.g., to realize 1D Majorana zero modes for quantum computations. However, it has been challenging to achieve controlled synthesis of ultrathin Pb1-xSnxTe (0 ≤ x ≤ 1) nanowires in the truly 1D region. In this work, we report on a Au-catalyzed vapor-liquid-solid (VLS) growth of remarkably thin (20-30 nm) and sufficiently long (several to tens of micrometers) Pb1-xSnxTe nanowires of high single-crystalline quality in a controlled fashion. This controlled growth was achieved by enhancing the incorporation of Te into the Au catalyst particle to facilitate the precipitation of the Sn/Pb species and suppress the enlargement of the particle, which we identified as a major challenge for the growth of ultrathin nanowires. Our growth strategy can be easily extended to other compound and alloy nanowires, where the constituent elements have different incorporation rates into the catalyst particle. Furthermore, the growth of thin Pb1-xSnxTe nanowires enabled strain-dependent electrical transport measurements, which shows an enhancement of electrical resistance and ferroelectric transition temperature induced by uniaxial tensile strain along the nanowire axial direction, consistent with density functional theory calculations of the structural phase stability.

Gate induced metallicity and absence of superconductivity in BSTO/LCO heterostructure

We fabricated Ba0.8Sr0.2TiO3 (BSTO)/La2CuO4 (LCO) heterostructure on SrTiO3 (STO) substrate and investigated its structure and physical properties. X-ray diffraction and reciprocal space mapping confirm the epitaxial growth of BSTO/LCO/STO heterostructure. X-ray photoelectron spectroscopy and UV–Visible spectroscopy measurements reveal a straddling band alignment of the BSTO/LCO heterojunction. Such band alignment facilitates the accumulation of both electrons and holes at the interface. Their movement depends on the direction of the internal field of the BSTO film. Electrical transport measurements have revealed a signature of insulator-to-metal transition (IMT) in response to applied gate voltages ±Vg. Hall measurements confirm the presence of electron and hole type charge carriers under ＋Vg and −Vg, respectively. We have proposed a screening mechanism linked to the polarization state of the BSTO film to explain the observed IMT.

Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition.

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104cm2V-1s-1 on SiO2/Si and 105cm2V-1s-1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

Emergence of Superconductivity in Indium Triphosphate via Pressure‐Tuned Interlayer Bond Formation

Tuning interlayer interactions offer an alternative approach to access novel electronic structure and intriguing physical properties in layered materials. Here, the emergence of a new form of superconductivity in two‐dimensional (2D) binary phosphides by strengthening the interlayer coupling with lattice compression is reported. Electrical transport measurements show strong evidence of superconductivity in InP3 with the highest critical temperature (Tc) of 9.5 K at 45.1 GPa. Raman and X‐ray diffraction (XRD) measurements indicate that the interlayer interactions are dramatically modulated under compression, along with the deformation of local In–P bipyramid structure and reduction of the interlayer distances, which eventually results in the formation of In–P bonds between neighboring In–P bipyramids and a Rm to Cmcm structural transition. First‐principles density functional theory (DFT) calculations reveal that pressure enhances the interlayer interactions, which increases the density of states (DOS) near the Fermi surface (N(EF)) and strengthens the electron–phonon coupling. Consequently, this favors the occurrence of superconductivity in compressed InP3. This study not only introduces a new superconductivity phase with enhanced electron–phonon coupling in binary phosphides, but also provides a platform for exploring the pressure effect on interlayer interactions in material systems with corrugated layered structure.

Unconventional charge density wave in a kagome lattice antiferromagnet FeGe

FeGe is a kagome material that exhibits both charge density wave (CDW) order and magnetic order. The CDW order is developed deep inside the A-type antiferromagnetic phase in FeGe, providing a unique platform to investigate the interplay between CDW and magnetism. However, the driving mechanism of the CDW phase remains controversial. In this work, we performed high-pressure electrical transport and x-ray diffraction measurements combined with density-functional theory calculations to investigate the evolution of the CDW of FeGe under pressure. In contrast to conventional CDW materials, the CDW transition temperature of FeGe increases with increasing pressure, indicating the unconventional mechanism of CDW in this material. More interestingly, another possible CDW with a 3×3×6 superlattice emerges above 20 GPa, which may be explained by the calculated metastable CDW states under high pressure. These observations exclude the possibility of Van Hove singularities nesting as a CDW driving force. Our results unveil versatile CDW states and broaden the study of intertwined electronic states in the magnetic kagome metal FeGe. Published by the American Physical Society 2024

(Invited) Flow of Charge and Heat in Ultra-Clean Graphene

Over the past two decades our understanding of the charge and heat transport properties of graphene has evolved progressively as the quality of graphene devices improved. In this talk, I shall present some new experimental result on the electrical and thermal transport measurements in graphene devices of unprecedented electrical mobility (> 1 million cm2/V.s). We show that the transport in such graphene devices is limited by intrinsic acoustic phonons and their scattering with electrons, rather than charged impurities – which is the case in conventional disordered graphene devices. This manifests in a rather striking violation of the Wiedemann-Franz law and density-dependent variation of the effective Lorenz number over six orders of magnitude. We find that the transport properties of ultra-clean graphene are quantitatively consistent with that of a hydrodynamic Dirac fluid.

Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling.

Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 1013 cm-2 from CrOCl to graphene, which is highly consistent with the enhanced conductivity of graphene. First-principles calculations based on density functional theory reveal that due to the large work function difference and the electronegativity of Cl atoms in CrOCl, the electrons are efficiently transferred from graphene to CrOCl, leading to hole doping in graphene. Our findings provide clues for understanding the exotic physical properties of graphene/CrOCl heterostructures, paving the way for further engineering of quantum electronic states by efficient interfacial charge coupling in van der Waals heterostructures.

Structural analysis and transport properties of [010]-tilt grain boundaries in Fe(Se,Te)

ABSTRACT Understanding the nature of grain boundaries is a prerequisite for fabricating high-performance superconducting bulks and wires. For iron-based superconductors [e.g. Ba(Fe,Co) 2 As 2 , Fe(Se,Te), and NdFeAs(O,F)], the dependence of the critical current density J c on misorientation angle ( θ GB ) has been explored on [001]-tilt grain boundaries, but no data for other types of orientations have been reported. Here, we report on the structural and transport properties of Fe(Se,Te) grown on CeO 2 -buffered symmetric [010]-tilt roof-type SrTiO 3 bicrystal substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscopy revealed that θ GB of Fe(Se,Te) was smaller whereas θ GB of CeO 2 was larger than that of the substrate. The difference in θ GB between the CeO 2 buffer layer and the substrate is getting larger with increasing θ GB . For θ GB ≥ 24 ∘ of the substrates, θ GB of Fe(Se,Te) was zero, whereas θ GB of CeO 2 was continuously increasing. The inclined growth of CeO 2 can be explained by the geometrical coherency model. The c -axis growth of Fe(Se,Te) for θ GB ≥ 24 ∘ of the substrates is due to the domain matching epitaxy on (221) planes of CeO 2 . Electrical transport measurements confirmed no reduction of inter-grain J c for θ GB ≤ 9 ∘ , indicative of strong coupling between the grains.

Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors

The role of oxygen plasma power on the extent of surface passivation of Gallium Nitride (GaN) epitaxial layers and the photo-response of Au/Ni/GaN Schottky detectors is investigated. The surface morphology is found to be preserved in oxide passivated GaN at intermediate plasma power which significantly deteriorates at higher power. The photoluminescence spectrum shows a fall in the intensity of band edge and defects related yellow luminescence at higher power indicating the generation of non-radiative recombination centres. The chemical and electronic structures of the passivated layer investigated by x-ray photoelectron spectroscopy revealed the formation of stoichiometric Ga2O3 up to intermediate plasma power and partial decomposition of Ga2O3 along with formation of gallium sub-oxides at higher power. This leads to an enhancement in the responsivity of the photodetector after passivation at an intermediate plasma power followed by a considerable reduction at higher power. From the electrical transport measurement across the Au/Ni/GaN Schottky diode, it is observed that the diode manifests more Schottky (Ohmic) character after oxygen plasma treatment at intermediate (higher) power. The present investigations provide a clear guideline on the selection of oxygen plasma power for surface passivation on GaN, which is highly beneficial in optimizing the performance of GaN-based optoelectronic and power devices.