Electrical Properties Research Articles

Insights into how characteristics of dissolved algal organic matter affect the efficiency of modified clay in controlling harmful algal blooms

Dissolved algal organic matter (dAOM) originating from harmful algal blooms (HABs) can deteriorate the quality of municipal water supplies, threaten the health of aquatic environments, and interfere with modified clay (MC)-based HABs control measures. In this study, we explored the composition of dAOM from Prorocentrum donghaiense, a typical HAB organism, and assessed the influence of dAOM on MC flocculation. Our results suggested that dAOM composition was complex and had a wide molecular weight (MW) distribution. MW and electrical properties were important dAOM characteristics affecting flocculation and algal removal efficiency of MC. Negatively charged high-MW components (>50 kDa) critically affected algal removal efficiency, reducing the zeta potential of MC particles and leading to small and weak flocs. However, the effect of dAOM depended on its concentration. When the cell density of P. donghaiense reached HAB levels, the high-MW dAOM strongly decreased the algal removal efficiency of MC.

Improvement of ferroelectric and dielectric properties in BaTiO3/LaNiO3 superlattices by regulating the ferroelectric layer thickness

Ferroelectric superlattices exhibit rich functional characteristics. Yet, the ferroelectric properties are always unsatisfactory due to the presence of depolarization field resulting from the polarization discontinuities between the component materials, which has become a bottleneck problem hindering the improvement of ferroelectric properties and further industrial applications. Here, the BTO/LNO superlattices composed of ferroelectric (BaTiO3, BTO) and metallic (LaNiO3, LNO) materials were prepared by pulsed laser deposition (PLD). The periodic thickness of the LNO layers was fixed to 2 unit cells, while the periodic thickness of the BTO layers was changed. We demonstrate experimentally that by regulating the BTO periodic thickness, BTO/LNO superlattices exhibit excellent and adjustable ferroelectric and dielectric properties. The enhancement of electrical properties is closely related to the increase of tetragonality (c/a) combined with the effect of the ultra-thin LNO layers and the accumulation of oxygen vacancies at superlattice interfaces on reducing the depolarization field. We hope this work will provide an effective strategy for optimizing the ferroelectric properties of ferroelectric superlattices based on the component material and periodic structure regulation.

Tailoring the physical, optoelectronic and transport properties of novel lead-free Sodium perovskites Na2TeX6 (X = Cl, Br, I) using DFT computation for photovoltaic and thermal devices

In this work, we analyzed the system, elastic, electronics, optical, as well as thermoelectric properties of perovskites Na2TeX6 (X = Cl, Br, I) systems using a potential linearization augmented plane Wave method with the help of WIEN2k. code. The tolerance factor, fermi energy, and mechanical characteristics define the stability of perovskites Na2TeX6 (X = Cl, Br, I) systems. The electronic properties were calculated using the generalized gradient plus the modified Becke-Johnson method. The computed values of the compounds Na2TeX6 (X = Cl, Br, I) are 3.15 eV, 2.54 eV, and 1.85 eV, indicating that the analyzed materials have electronic material. We determined the optical characteristics based on the facts and hypotheses of the dielectric function, refractive index, reflection, and absorption coefficients, taking into consideration the usage in photovoltaic and optoelectronic devices. Investigation of their transport characteristics reveals that both materials have been thermodynamically stable. The compounds were predicted in the temperature range of 200-1200 K for electrical properties such as electrical conductance, Seebeck coefficient, thermal conductivity, and power factor. At low temperatures, the compounds had a good Seebeck coefficient, which shows that the hole is the main part of the system and the solids nature is p-type. The perovskites to Na2TeX6 (X = Cl, Br, I) compound's high zT values suggested that they may be employed in thermoelectric devices.

Formation of High Hardness ZnO/Cu Nanocomposite by Thermal Oxidation from Cu-Zn Alloy Strips

Due to their superior thermal, electrical, and mechanical properties, brass and Cu-Zn alloys are widely used in a broad range of applications. In applications requiring greater durability, corrosion resistance, and wear resistance, however, the ZnO/Cu composite is preferable. Typically, ZnO/Cu composites are manufactured through powder metallurgy. In this article, brass strips are thermally oxidized in an oxygen atmosphere to produce ZnO/Cu composite strips. The optimal temperature and oxygen pressure are 600–650 °C and less than one atmosphere, respectively. The homogeneous distribution of nanoscale ZnO clusters in the Cu matrix can be attributed to the diffusion of both Zn and O in the matrix. In addition, the composite is substantially harder than brass, increasing from 70–90 HV to 200–240 HV. Therefore, thermal oxidation has been shown to be a simple and cost-effective process for producing ZnO/Cu composites with high hardness.

Photoelectrical performances of semiconductor-based devices having CoFe and CoFeNi magnetic interlayers

This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good magnetic properties, specifically to investigate the effect of the Ni element on the electrical properties. In this context, Al/CoFe/p-Si and Al/CoFeNi/p-Si devices were produced by coating both materials between the semiconductor and the metal using the radio frequency (RF) sputtering method. First of all, to investigate the structural properties of the coated films, the content analysis was carried out by x-ray diffraction (XRD) analysis. To determine the photoelectrical properties of the produced devices, current–voltage and transient photocurrent measurements were performed and analyzed under different light intensities. While the ideality factor (barrier height) values of the devices produced using CoFe and CoFeNi materials were found to be 11.45 (0.487 eV) and 9.86 (0.513 eV), respectively, in the dark, they were obtained as 13.29 (0.446 eV) and 11.02 (0.484 eV) under 100 mW cm−2 illumination. It was determined that both devices are sensitive to light, with the sensitivity of the device with the CoFeNi interlayer being much higher. In addition, photocapacitance and photoconductivity measurements were carried out to examine the photocapacitor performance of the devices. As a result of the investigations, both current–voltage, photocurrent, and photo-capacitance/conductivity measurements showed that the device with the CoFeNi interface layer showed better performance than the device with the CoFe interface. Therefore, it has been determined that the Ni element has a positive effect on electrical properties. The results obtained show that the prepared materials and produced devices can be used in photovoltaic applications.

Electronic, thermoelectric and electrical transport properties of single layer γ-graphyne

Recently, graphyne has emerged as the sole two-dimensional carbon material exhibiting both sp and sp2 hybridization. It’s remarkable attributes have ignited considerable interest, particularly in the realm of optoelectronics, driven by its narrow band gap, signifying its vast potential in this field. In this paper we investigated electronic, thermoelectric and electrical transport properties of single layer γ-graphyne systematically and comparatively by using density functional theory (DFT). Our findings reveal that γ-graphyne displays pronounced absorption peaks within both the infrared (IR) and visible regions (VR), indicating its robust optical characteristics. Additionally, γ-graphyne showcases exceptional thermoelectric performance. The insights gained from this study elucidate the properties of γ-graphyne and suggest its applicability across various domains, including optical sensing and thermoelectric energy conversion devices.

Photocatalytic degradation of Rhodamine B dye via Bi2O3 embedded BaO-P2O5-TeO2 glass nanocomposites: An ab initio study of structural, optical, and electrical transport properties

Bismuth incorporated glassy systems with composition xBi2O3-(1-x) [0.3BaO-0.3P2O5-0.4TeO2] (where x = 0.10, 0.15, 0.20, and 0.25) are synthesized by melt quenching technique. The glassy systems are examined for their structural, and surface morphological properties using XRD, SEM, and EDX analysis. A study of photocatalytic activity for the degradation of common organic dyes like Rhodamine B (RhB) dye under visible light is also carried out. From UV-vis absorbance data, the calculated optical band gap energy values declined from (2.99-2.56) eV, whereas the Urbach energy and refractive index values increased from (0.35 -0.52) eV, and (2.39 - 2.52), respectively with the rise of Bi2O3 content(x). Additionally, the fundamental processes of electrical conductivity have been studied within the framework of Jonscher's universal power law and the Almond-West formalism. The Mott and Greaves model asserts that the small polaron hopping model underlies DC conductivity; as Bi2O3 content increases, DC conductivity rises, but hopping distance (Rhop) and hopping energy (Whop) drop dramatically. The electrical conductivity study reveals the semi-conducting nature of the as-prepared samples. In our present study, we are focusing on the structural, optical, and electrical transportation properties, additionally, we investigated this class of glassy materials as a promising candidate for photocatalytic dye degradation. Our study reveals that RhB dye can degrade up to 75% within 340 min of visible light illumination. Moreover, the test demonstrates the production of superoxide radicals by the CB-electrons and hydroxyl radicals by the VB holes enables efficient photocatalytic dye degradation.

Azine Based Oligoesteric Chemosensors for Cu2+ Ion Detection: Synthesis, Structural Characterization, and Theoretical Investigations.

Synthesized monomer and its three oligoesters were characterized by techniques such as 1H, 13C{1H}, IR, UV, GPC and applied to chemosensor applications. A series of metal ions was studied with fluorophores to evaluate the sensitivity towards Cu2+ ion. The fluorophores results exhibit the selective and sensitive "Turn off" fluorescence response with Cu2+ ion in DMF/H2O (1:1, pH: 7.4, fluorophore: 5µM) solution. Binding stoichiometry and binding constant of fluorophores were calculated using Stern-Volmer equation and Benesi-Hildebrand plots, respectively. Structure of fluorophores were studied using DFT, B3LYP/6-311 + + G(d,p) level basis set. Quenching mechanisms and electrical properties of fluorophores were explained with theoretical outcomes. Iodine doped and undoped oligoesters electrical conductivity were studied in solid-state and the conductivity was gradually increased with increase the contact time of iodine with oligoesters. At different frequencies and temperatures, the dielectric measurement was calculated using the two-probe method. Among all oligoesters, DMDAP exhibited high electrical conductivity and DMDMP has a higher dielectric constant value than other oligoesters.

Multi-functional and actively tunable terahertz metamaterial absorber based on graphene and vanadium dioxide composite structure

In this paper, a fabrication friendly terahertz (THz) metamaterial hybrid absorber comprised of square-shaped graphene and U-shaped vanadium dioxide is proposed and numerically analyzed. This device can be tuned dynamically to function as a wide-broadband, reduced-broadband, multi-band, or perfect single-band absorber. Switchable qualities are achieved through simultaneous tuning of the electrical properties of graphene and the phase transition properties of vanadium dioxide. The theory behind the absorption is explored using the distribution of the electric field and the theory of impedance matching. It is clear from the simulation results that the suggested structure can perform as a wide-broadband absorber for the transverse electric (TE) wave during the insulating phase of vanadium dioxide. In this case, graphene’s Fermi energy is configured to 0.7 eV, and it has a 0.1 ps relaxation time. Moreover, only changing the relaxation time to 0.5 ps enables the identical structure to perform as a multi-band absorber. On the contrary, the designed structure exhibits a reduced broadband absorption for the TE wave when the vanadium dioxide is thermally tuned to a metallic state and graphene’s Fermi energy is configured to 0 eV with a 0.1 ps relaxation time. Moreover, by inducing the metallic state in vanadium dioxide and adjusting the Fermi energy of graphene to 0.3 eV with a 0.1 ps relaxation time, the structure performs as a single-band perfect absorber. The main advantage of this work is that the proposed absorber device can be operated as a single-band, multi-band, or broadband absorber with two different bandwidths by applying external voltage and changing temperature. Additionally, for both the TE and transverse magnetic (TM) waves, the structure retains a high level of absorption until 40° of incident angle. Finally, due to its multi-functional property, simple geometric structure, and actively adjustable function, the presented structure has possible real-life applications in the terahertz frequency range.

Modification of WS2 thin film properties using high dose gamma irradiation

The tunability of the transition metal dichalcogenide properties has gained attention from numerous researchers due to their wide application in various fields including quantum technology. In the present work, WS2 has been deposited on fluorine doped tin oxide substrate and its properties have been studied systematically. These samples were irradiated using gamma radiation for various doses, and the effect on structural, morphological, optical and electrical properties has been reported. The crystallinity of the material is observed to be decreased, and the results are well supported by x-ray diffraction, Raman spectroscopy techniques. The increase in grain boundaries has been supported by the agglomeration observed in the scanning electron microscopy micrographs. The XPS results of WS2 after gamma irradiation show evolution of oxygen, carbon, C=O, W–O and SO4 −2 peaks, confirming the addition of impurities and formation of point defect. The gamma irradiation creates point defects, and their density increases considerably with increasing gamma dosage. These defects crucially altered the structural, optical and electrical properties of the material. The reduction in the optical band gap with increased gamma irradiation is evident from the absorption spectra and respective Tauc plots. The I–V graphs show a 1000-fold increase in the saturation current after 100 kGy gamma irradiation dose. This work has explored the gamma irradiation effect on the WS2 and suggests substantial modification in the material and enhancement in electrical properties.

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

AbstractUltra‐wide bandgap semiconductor AlGaN is a promising candidate for high‐power and high‐frequency electronics. AlGaN‐heterostructures with nitrogen (N)‐polarity can offer added benefits of low‐leakage and large drive current. However, electro‐thermal transport in such heterostructures remains unexplored, although they are essential for electronic device functionality. Here, the thermal and electrical properties of N‐polar AlxGa1‐xN‐channel heterostructures (Al percentage, x = 15–90%) are explored and compared with their GaN counterpart. The thermal measurements uncover that the effective thermal resistance of the thin channel and barrier layers are similar in magnitudes for N‐polar‐ AlGaN and GaN heterostructures, however, the total effective thermal conductivity in N‐polar AlGaN heterostructure is ≈4× smaller. This reduction originates from the larger thermal resistance of the thick Al0.15Ga0.85N buffer layer within the AlGaN stack. N‐polar AlxGa1‐xN stack displays a thermal conductivity almost independent of temperature, measured from room temperature up to 200 °C. Hall measurements of an N‐polar Al0.30Ga0.70N‐channel heterostructure further reveal that electrical properties such as resistivity, carrier density, and mobility remain nearly unchanged with temperature, indicating the dominance of alloy‐phonon scattering in such material systems. These results offer important insights into material‐device co‐design and reliability of N‐polar AlGaN heterostructures.

Efficient, Color-Stable, Pure-Blue Light-Emitting Diodes Based on Aromatic Ligand-Engineered Perovskite Nanoplatelets.

Perovskite nanoplatelets (NPLs) show great potential for high-color-purity light-emitting diodes (LEDs) due to their narrow line width and high exciton binding energy. However, the performance of perovskite NPL LEDs lags far behind perovskite quantum dot-/film-based LEDs, owing to their material instability and poor carrier transport. Here, we achieved efficient and stable pure blue-emitting CsPbBr3 NPLs with outstanding optical and electrical properties by using an aromatic ligand, 4-bromothiophene-2-carboxaldehyde (BTC). The BTC ligands with thiophene groups can guide two-dimensional growth and inhibit out-of-plane ripening of CsPbBr3 NPLs, which, meanwhile, increases their structural stability via strongly interacting with PbBr64- octahedra. Moreover, aromatic structures with delocalized π-bonds facilitate charge transport, diminish band tail states, and suppress Auger processes in CsPbBr3 NPLs. Consequently, the LEDs demonstrate efficient and color-stable blue emissions at 465 nm with a narrow emission line width of 17 nm and a maximum external quantum efficiency (EQE) of 5.4%, representing the state-of-the-art CsPbBr3 NPL LEDs.

Nonlinear Optical Saturable Absorption Properties of 2D VP Nanosheets and Application as SA in a Passively Q-Switched Nd:YVO4 Laser

Two-dimensional (2D) violet phosphorus (VP) plays a significant role in the applications of photonic and optoelectronic devices due to its unique optical and electrical properties. The ultrafast carrier dynamics and nonlinear optical absorption properties were systematically investigated here. The intra- and inter-band ultrafast relaxation times of 2D VP nanosheets were measured to be ~6.83 ps and ~62.91 ps using the pump–probe method with a probe laser operating at 1.03 μm. The nonlinear absorption coefficient βeff, the saturation intensity Is, the modulation depth ΔR, and the nonsaturable loss were determined to be −2.18 × 104 cm/MW, 329 kW/cm2, 6.3%, and 9.8%, respectively, by using the Z-scan and I-scan methods, indicating the tremendous saturable absorption property of 2D VP nanosheets. Furthermore, the passively Q-switched Nd:YVO4 laser was realized with the 2D VP nanosheet-based SA, in which the average output power of 700 mW and the pulse duration of 478 ns were obtained. These results effectively reveal the nonlinear optical absorption characteristics of VP nanosheets, demonstrating their outstanding light-manipulating capabilities and providing a basis for the applications of ultrafast optical devices. Our results verify the excellent saturable absorption properties of 2D VP, paving the way for its applications in pulsed laser generation.

Effect of annealing temperature on physical properties and photoelectrochemical behavior of electrodeposited nanostructured NiO thin films for optoelectronic applications

Our paper used a low-cost electrodeposition technique to grow Nickel Oxide (NiO) thin films on fluorine-doped tin oxide (FTO) substrate. As-deposited films were annealed at different temperatures (350, 400, 450, and 500 °C). X-ray diffraction (XRD), Raman spectroscopy (RAM), scanning electron microscopy (SEM), UV–vis spectrophotometer, photoluminescence (PL), Cyclic voltammetry (CV), photocurrent (PC), electrochemical impedance spectroscopy (EIS), and Mott-Schottky analysis (MS) were used to study and investigate the effect of annealing temperatures on the structural, morphological, electrical, and optical properties of prepared thin films. XRD patterns proved the cubic phase of all NiO samples with the preferential orientation in (111) direction. SEM results showed that the grain size increased with increasing annealing temperature. The optical transmission was studied by a UV–vis spectrophotometer, where high transmittance for NiO thin films was found to vary in the range of 73–84 % in the visible wavelength region, depending on the annealing temperatures. At the same time, UV–visible measurements indicate an absorption band edge at 311 nm, mainly recognized as a characteristic direct band gap for prepared NiO. The optical gap calculated from the Tauc relation showed a decreasing trend from 3.97 to 3.86 eV with increasing annealing temperature from 300 °C to 500 °C. PL spectra of synthesized samples revealed two distinct emission peaks at around 400 nm and 490 nm. RAM analysis confirmed the presence of three characteristic peaks related to the vibration of Ni–O bonds. The NiO film annealed at 500 °C displays the highest specific capacitance value by CV analysis. The P-type conductivity of manufactured arrays and enhanced electrical properties were confirmed by PC, EIS, and MS analysis. The highest carrier concentration values (9.19 × 1018 cm−3) and flat band potential (0.82 V) were obtained for samples annealed at 500 °C. Our outcomes proved that NiO-500 °C thin films are ideal candidates for optoelectronic applications.

Effect of temperature on polaronic transport in CeO2 thin-film.

The outstanding catalytic property of cerium oxide (CeO2) strongly depends on the polaron formation due to the oxygen vacancy (V̈O) defect and Ce4+ to Ce3+ transformation. Temperature plays an important role in the case of polaron generation in CeO2 and highly influences its electrical transport properties. Therefore, a much needed attention is required for detailed understanding of the effect of temperature on polaron formation and oxygen vacancy migration to get an idea about the improvement in the redox property of ceria. In this work, we have probed the generation of polarons in CeO2 thin-film deposited on a silicon (Si) substrate using the resonance photoemission spectroscopy (RPES) study. The RPES data show an increase in polaron density at the substrate-film interface of the thermally annealed film, indicating the formation of an interfacial Ce2O3 layer, which is, indeed, a phase change from the cubic to hexagonal structure. This leads to a modified electronic band structure, which has an impact on the capacitance-voltage (C-V) characteristics. This result nicely correlates the microscopic property of polarons and the macroscopic transport property of ceria.

Nanoscale Adhesion and Material Transfer at 2D MoS2-MoS2 Interfaces Elucidated by In Situ Transmission Electron Microscopy and Atomistic Simulations.

Low-dimensional materials, such as MoS2, hold promise for use in a host of emerging applications, including flexible, wearable sensors due to their unique electrical, thermal, optical, mechanical, and tribological properties. The implementation of such devices requires an understanding of adhesive phenomena at the interfaces between these materials. Here, we describe combined nanoscale in situ transmission electron microscopy (TEM)/atomic force microscopy (AFM) experiments and simulations measuring the work of adhesion (Wadh) between self-mated contacts of ultrathin nominally amorphous and nanocrystalline MoS2 films deposited on Si scanning probe tips. A customized TEM/AFM nanoindenter permitted high-resolution imaging and force measurements in situ. The Wadh values for nanocrystalline and nominally amorphous MoS2 were 604 ± 323 mJ/m2 and 932 ± 647 mJ/m2, respectively, significantly higher than previously reported values for mechanically exfoliated MoS2 single crystals. Closely matched molecular dynamics (MD) simulations show that these high values can be explained by bonding between the opposing surfaces at defects such as grain boundaries. Simulations show that as grain size decreases, the number of bonds formed, the Wadh and its variability all increase, further supporting that interfacial covalent bond formation causes high adhesion. In some cases, sliding between delaminated MoS2 flakes during separation is observed, which further increases the Wadh and the range of adhesive interaction. These results indicate that for low adhesion, the MoS2 grains should be large relative to the contact area to limit the opportunity for bonding, whereas small grains may be beneficial, where high adhesion is needed to prevent device delamination in flexible systems.

Proton‐conducting hydrogel electrolytes with tight contact to binder‐free MXene electrodes for high‐performance thermally chargeable supercapacitor

AbstractThermally chargeable supercapacitors (TCSCs) have offered exceptional energy‐converting efficiency for absorbing human epidermal heat and generating and storing electrical energy, which then realize continuous power supply to electronic devices, such as sensors and wearable electronic products, in a wide range of practical significance. Here, we proposed a flexible TCSC by attaching binder‐free Ti3C2Tx MXene@PPy electrodes on both ends of the H3PO4@P(AM‐co‐AA‐co‐AYP K+) hydrogel electrolyte, which exhibits a large thermal power of 35.2 mV K−1 at 50% relative humidity and maximum figure of merit of 2.1. The high performances of the fabricated devices can be attributed to the tunable electrical, thermodynamic, thermoelectric, and mechanical properties of the hydrogel electrolyte by adjusting the acid content and the proportion of zwitterionic compound AYP K+ in the hydrogel, and the high photothermal conversion efficiency and electrochemical performance of the electrodes. Moreover, the stable and outstanding thermofvoltage output (∼200 mV) under different time scenarios of the TCSC makes it possible to drive a strain sensor, accomplishing the objectives of a human activity monitor.

Effect of tin doping on the structural, optical, and dielectric properties of unintentionally β-Ga2O3 single crystal

Abstract This paper studied the structural, optical, electrical, and dielectric properties of the undoped and 0.05 mol% Sn-doped β-Ga2O3 single crystals through comprehensive characterizations by X-ray diffraction (XRD), Raman scattering, Optical transmittance spectroscopy, X-ray photoelectron spectroscopy (XPS), Ultraviolet photoelectron (UPS) spectroscopy, and dielectric measurements. The optical bandgap decreases as Sn content increases. The results of XPS showed that Sn atoms were successfully added to the host β-Ga2O3 crystal. The position of the Fermi level of 0.05 mol% Sn-doped β-Ga2O3 is calculated to be 2.56 eV above the valence band and 1.85 eV beneath the conduction band. Also, the computed value of the work function of 0.05% mole Sn-doped β-Ga2O3 is 4.53 eV. AC conductivity increases, while dielectric loss and dielectric constant decrease with increasing frequency.

Greatly Enhanced Thermoelectric Performance of Flexible Cu2−xS Composite Film on Nylon by Se Doping

In this work, flexible Cu2−xS films on nylon membranes are prepared by combining a simple hydrothermal synthesis and vacuum filtration followed by hot pressing. The films consist of Cu2S and Cu1.96S two phases with grain sizes from nano to submicron. Doping Se on the S site not only increases the Cu1.96S content in the Cu2−xS to increase carrier concentration but also modifies electronic structure, thereby greatly improves the electrical properties of the Cu2−xS. Specifically, an optimal composite film with a nominal composition of Cu2−xS0.98Se0.02 exhibits a high power factor of ~150.1 μW m−1 K−2 at 300 K, which increases by ~138% compared to that of the pristine Cu2-xS film. Meanwhile, the composite film shows outstanding flexibility (~97.2% of the original electrical conductivity is maintained after 1500 bending cycles with a bending radius of 4 mm). A four-leg flexible thermoelectric (TE) generator assembled with the optimal film generates a maximum power of 329.6 nW (corresponding power density of 1.70 W m−2) at a temperature difference of 31.1 K. This work provides a simple route to the preparation of high TE performance Cu2-xS-based films.

Role of interfacial layer as PANI–silicene in Si-based photodiodes

AbstractSilicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.