Effect Of Ge Content Research Articles

Effect of Ge doping on the magnetic properties of Fe-6.5Si soft magnetic composites

In this work, the effect of Ge content on the soft magnetic properties and microstructure of FeSiGe soft magnetic powder cores (SMPCs) was systematically investigated. The results show that the addition of Ge is beneficial to increase the electrical resistivity of Fe93.5-xSi6.5Gex SMPCs, and the coercivity (Hc) shows a trend of decreasing and then increasing with the increase of Ge content. When the content of Ge is 2 wt%, the SMPCs exhibit the best magnetic properties with stable effective permeability of 78.4 up to 1 MHz, low core loss of 589.5 mW/cm3 at a maximum magnetic induction of 0.1 T and frequency of 50 kHz. By doping with Ge, the micro-vortex dots in the magnetic domain structure are reduced and the domain walls move more easily with the applied field, and the magnetic properties are improved.

Effect of Ge Addition on Magnetic Properties and Crystallization Mechanism of FeSiBPNbCu Nanocrystalline Alloy with High Fe Content

In this work, new Ge-containing Fe-based nanocrystalline alloys with the composition of Fe80.2Si3B12-xP2Nb2Cu0.8Gex (x = 0, 1, 2 at.%) were developed, and the effects of Ge content on the magnetic and crystallization processes of the alloys were investigated. The addition of Ge extends the annealing window of the present Fe-based alloys, which reaches 173.6 K for the alloy of x = 2. The nanocrystalline alloy of x = 2, composed of dense and uniformly distributed α-Fe grains with an average grain size of 15.7 nm precipitated in the amorphous matrix, was obtained by conventional annealing treatment at a temperature of 843 K for 10 min, and this nanocrystalline alloy exhibited excellent magnetic properties with the Hc of 3 A/m and Bs of 1.65 T, which has great potential for industrial application. Non-isothermal crystallization kinetics studies show that the nucleation activation energy of the alloys gradually decreases with the increase in Ge content. The primary crystallization process is dominated by the direct growth of pre-existing nuclei in the as-spun alloy ribbons, and these pre-existing nuclei provide numerous heterogeneous nucleation sites to form dense and uniform α-Fe nanocrystals with a fine grain size, which leads to the excellent magnetic properties of the present Ge-containing Fe-based nanocrystalline alloys.

The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

The material engineering of GeSbTe alloys has led to the significant improvements of thermal stability, necessary to ensure the data retention of the Phase-Change Memory device (PCM) over extended temperature range. However, despite the proven benefits of Ge enrichment of GeSbTe alloys, the effect of Ge content on the structure and its evolution as a function of annealing temperature remains unclear. In this paper, we present the structural analyses of as-deposited and annealed Ge-rich GeSbTe, considering the Ge enrichment (15–55 at.%) of reference Ge2Sb2Te5 alloy. Based on the combination of Raman spectroscopy and X-ray diffraction techniques, we describe the progressive reorganization of the main structural features common to all investigated compositions. Therefore, we present a model describing the overall crystallization mechansim in Ge-rich GeSbTe. We highlight several competing phenomena in the system at increasing temperature, such as Ge diffusion and segregation as well as nucleation and growth of GeSbTe and Ge phases, which depends on Ge content. Our results contribute to the understanding of the crystallization mechanisms in Ge-rich GeSbTe alloys, unveiling the primary structural reorganization and crystallization of the GeSbTe phase followed by the crystallization of the Ge phase.

Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides

Thermal silicidation characteristics of Ni/Si1-xGex with various Ge content was studied under different annealing temperatures in the range of 225 °C ∼ 400 °C in 100% N2 ambient. TiN capped Ni/Si1-xGex/Si/SiO2/Si wafers with x values in the range of 0.15 and 0.30 in 0.05 intervals were used. Thermal silicide formation was performed in a stacked hotplate-based annealing system designed for industrial 300 mm wafer fabs. For silicide characterization, measurements of spectral reflectance, sheet resistance, Raman spectra as well as X-ray diffraction curves were performed to investigate changes of optical properties, electrical properties, crystallographic phases during silicide formation. Effects of Ge content and annealing temperature on the electrical and crystallographic properties of the resulting thermal silicides (nickel germanosilicides) were investigated. Reaction mechanisms were discussed based on the characterization results. Multiwavelingth micro-Raman spectroscopy was found to be very promising as a non-contact, in-line silicidation process monitoring technique. For production worthiness verification of the thermal silicidation process, temperature sensitivity curves of sheet resistance, its uniformity and detailed sheet resistance maps were investigated using 8 nm thick Ni films on 300 mm diameter, epitaxial Si0.8Ge0.2/p−-Si wafers without a capping layer. Manufacturability of Ni/Si0.80Ge0.20/Si wafers were also verified using a stacked hotplate-based, nearly isothermal, annealing system.

The effect of Ge content on the structure and properties of low temperature deposited infrared Ge100-xCx films on As40Se60 chalcogenide glass

In this work, amorphous Ge100-xCx films were deposited on As40Se60 chalcogenide glass by radio frequency magnetron co-sputtering (rf MS) with different Ge content. The deposition temperature rise, the structural, mechanical and optical properties of Ge100-xCx films as a function of Ge content was investigated by thermocouple, X-ray photoelectron spectroscopy (XPS), Raman Spectroscopy, X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transformed Infrared Spectroscopy, Surface Profiler and Continuous Stiffness Measurement (CSM). The deposition temperature rise of Ge100-xCx films derived from radical ions and neutrals is mild (<140℃) and lower than the transition temperature of As40Se60 chalcogenide glass (185 ± 5℃). The results reveal that both sp3 CC and sp2 CC clusters within Ge100-xCx film are converted to sp3 C-Ge bonds and finally depleted as Ge content increases from 18% to 79%. The conversion of sp2 CC structure to sp3 C-Ge bonds is faster than sp3 CC structure. The olefinic chains and nc-graphite clusters of sp2 CC structure are preferentially consumed to construct the sp3 C-Ge bonds. The nanohardness of Ge100-xCx films increases from 6.86 GPa to 9.87 GPa and elastic modulus of Ge100-xCx films increases from 35.72 GPa to 62.42 GPa as Ge content increases from 18% to 79%. Elastic recovery parameter (ERP) of Ge100-xCx film increases from 33.79% to 35.01% and nanohardness/Elastic modulus (H/E) decreases from 0.192 to 0.158 as Ge content increases from 18% to 79%. Ge100-xCx (66% Ge) /DLC double layer promotes the longwave infrared band (8 μm ∼ 11 μm) mean transmittance of As40Se60 chacogenide glass from 61.3% to 66.4%.

Whether Ge-Rich ZrO2 and Ge-Rich HfO2 Materials Have Similar Reaction on Annealing Treatment?

Usually, HfO2 and ZrO2 are considered as twin-oxides that have to demonstrate similar reaction on their doping with group IV elements as well as stable tetragonal “high-k” phase. However, in most cases the films produced with different approaches were compared. In this work, both Ge doped HfO2 and Ge-doped ZrO2 films were prepared using the same equipment that allows the same Ge content in both materials to be achieved via monitoring of deposition conditions. Thus, the effect of Ge content and thermal treatment on optical and structural properties of these films was studied to obtain direct experimental confirmation whether the formation of corresponding solid solutions and their phase separation stimulated by thermal treatment is similar for both oxides.The films were grown on 6-inch Si wafers by confocal magnetron sputtering using the deposition unit with installed Ge, HfO2 and ZrO2 targets simultaneously. After the deposition, the wafers with the films were cut on smaller samples and rapid thermal annealing in nitrogen atmosphere was performed at 300-900ºC during 30 s. The samples were investigated by means of spectroscopic ellipsometry, Raman scattering, FTIR and TEM methods.As-deposited pure ZrO2 and Ge-ZrO2 films as well as those annealed at TA≤600°C were found to be amorphous and homogeneous. Annealing at higher TA stimulates a phase separation and a formation of Ge nanoclusters (Ge-ncs). They crystallize at TC=640-700°C showing the tendency to the TC decrease with Ge content rise. An appearance of tetragonal ZrO2 phase in Ge-rich films was observed at TC=680-700°C. Such behavior of ZrO2 host shows the possibility to form Ge-ncs in amorphous matrix at TA=640-680°C that offers success application of such films.Contrary to pure ZrO2 films, as-deposited pure HfO2 films were found to be crystalline. Their doping with [Ge]≥5at% reduces the degree of film crystallinity towards amorphous structure that was found to be stable for TA£600°C. At higher TA the formation of Ge-ncs and tetragonal HfO2 phase was detected. However, this latter was found to be formed at TC=600-670 °C, while the Ge-ncs crystallize at TC=700-800°C. Note that the formation of larger Ge-ncs in Ge-ZrO2 films than that in Ge-HfO2 ones at the same annealing conditions was observed.Obtained results support the theoretical consideration about stability of tetragonal “high-k” phases in annealed films. However, they show also the difference in the reaction of Ge-HfO2 and Ge-ZrO2 materials on thermal treatment followed by phase separation. Its mechanism will be discussed in details.

Thermally Stimulated Evolution of Optical and Structural Properties of Germanium-Doped Alumina Films

Group IV semiconductor nanoclusters/nanocrystals attract a great interest because of substantial transformation of their optical, electrical and luminescent properties due to quantum confinement effects. During last decades significant attention was paid to the Si nanocrystals (ncs) embedded in Si oxide or nitride, and later, to the Ge-ncs embedded in these matrices. The mechanism of these 'ncs' formation was investigated in details.Recently we have reported on the Si-ncs formation in hafnia and alumina thin films. This work will present the results obtained for the Ge-rich Al2O3 films. The effect of Ge content and annealing conditions on the evolution of optical and structural properties of these materials and formation of Ge-ncs will be addressed.The films with different Ge content were grown on quarts substrates by magnetron co-sputtering of Ge and Al2O3 targets in argon plasma. After deposition, they were annealed in nitrogen atmosphere and analyzed by means of spectroscopic ellipsometry, FTIR, Raman scattering, XRD and photoluminescence methods. It is observed that suitable thermal treatment leads to the decomposition of nonstoichiometric films and results in the Ge-ncs formation. The formation of Ge-ncs via phase separantion requires lower temperatures (600-700°C) than that for Si-ncs production in alumina host (1050-1100ºC). An annealing at 800-950ºC results in the Ge out-diffusion from the films via formation of volatile GeO. This process results in the significant depletion of the near-surface regions in germanium that was confirmed by an appearance of gradient in the refractive index via film volume.Decomposition process stimulates also an appearance of visible and near-infrared photoluminescence. The shape of luminescent spectrum depends significantly on both Ge content and the excitation wavelength. It is observed that exciton recombination inside nanocrystals dominates at longer wavelength excitation, whereas the UV-blue excitation results in the radiative recombination via interface or host defects in the materials. This result was found to be caused by the competition of different radiative channels in the films. The evolution of optical and luminescent properties will be discussed in details.

Design and Investigation of the High Performance Doping-Less TFET with Ge/Si0.6Ge0.4/Si Heterojunction

A high performance doping-less tunneling field effect transistor with Ge/Si0.6Ge0.4/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germanium and Si0.6Ge0.4 materials to get the steeper energy band, which can also increase the electric field of source/channel tunneling junction. Meanwhile, the double-gate process is used to improve the gate-to-channel control. In addition, the effects of Ge content, electrode work functions, and device structure parameters on the performance of H-DLTFET are researched in detail, and then the above optimal device structure parameters can be obtained. Compared to the DLTFET, the simulation results show that the maximum on-state current, trans-conductance, and output current of H-DLTFET are all increased by one order of magnitude, whereas the off-state current is reduced by two orders of magnitude, so the switching ratio increase by three orders of magnitude. At the same time, the cut-off frequency and gain bandwidth product of H-DLTFET increase from 1.75 GHz and 0.23 GHz to 23.6 GHz and 4.69 GHz, respectively. Therefore, the H-DLTFET is more suitable for the ultra-low power integrated circuits.

Effect of α-irradiation of energy 0.5 MeV on hydrogen bonding in a-Si:H and ultrathin layers of a-Si:H/a-Ge:H

Effect of α-irradiation and Ge content for a-Si:H and a-Si:H/a-Ge:H with different layer films is studied on infrared (IR) spectra. The integrated intensity of the oscillator strength of Si-H and Ge-H vibrations is determined. It is found that the integrated intensities of IR vibrational bands are enhanced significantly after the bombardment by 0.5 MeV α-particles. These observations are explained in terms of the change in the oscillation strengths of the vibrational modes induced by defects created near the vibration complex during bombardment. The results reveal that the effect of Ge content on the infrared spectra before and after irradiated films by α-particles of energy 125KeV/n. The defects were created by bombardments induce an increase in the oscillator strengths for some of Si-H and Ge-H vibrations due to decrease in the refractive index . The dangling bonds were formed in the range 2700-3100cm-1 in a-Si:H/a-Ge:H in attributed to the presence of OH groups or due to the preferential attachment of hydrogen and deuterium to Si atoms rather than the Ge ones. The irradiated a-Si:H/a-Ge:H lead to decrease the absorption band due to increase the hydrogen content bonded to Ge atoms, therefore the disorder is decreased and the crystalline state is increased.

A Behavioral Model for High Ge Content in Si/Si1-xGex Multi-Quantum Well Detector

This paper presents a behavioral model for a Si/Si1− x Ge x multi-quantum well (MQW) detector that predicts device characteristics to investigate the effect of increasing Ge content in Si/Si1− x Ge x MQW. The modeling approach in this paper is based on a physical instead of empirical approach, which allows to obtain a predictive behavioral analysis of high Ge content with only a few fitting parameters. The model is used to simulate device transfer characteristics with respect to various amounts of Ge content used for Si1− x Ge x layer in MQW. The simulation results of the proposed model are validated with the experimental data. The simulated and the experimental data are consistent over a wide range of Ge content varied from 30% up to 50%. The primary objective of this paper is to optimize Ge content in the Si/Si1− x Ge x MQW detector to achieve desired thermal sensitivity measured in terms of temperature coefficient of resistance for a potential microbolometer application. This is the first study in the literature to develop such a highly predictive behavioral model of a Ge-enriched Si/Si1− x Ge x MQW. The study also presents the effect of including the carbon delta layers at the Si/Si1− x Ge x heterointerface on the device transfer characteristics. The effect of Ge content on the overall noise is also investigated by the noise characterization of the test devices.

Synthesis and characterization of polyelectrolyte complex membranes for the pervaporation separation of water–isopropanol mixtures using sodium alginate and gelatin

Using a solution technique, polyelectrolyte complex (PEC) membranes were prepared by the complexation of sodium alginate (SA) with gelatin (Ge). The physico-chemical properties of these PEC membranes were studied by Fourier transform infrared spectroscopy (FTIR), wide-angle X-ray diffraction (WAXD), differential scanning calorimetry (DSC), thermogravimetric analysis (TGA) and scanning electron microscopy (SEM). The pervaporation characteristics of membranes were investigated with water–isopropanol mixtures. The effects of Ge content and feed compositions on the pervaporation performance of the membranes were analyzed. The data thus obtained were employed to explain permeation behavior of water and isopropanol through PEC membranes. The experimental results showed that the membrane containing 10 mass% of Ge exhibits the highest separation selectivity of 4277 with a flux of 8.47 × 10−2 kg/m2 h at 30 °C for 10 mass% of water in the feed. The total flux and flux of water are found to be overlapping each other, particularly, for PEC membranes, manifesting that the developed membranes could be used effectively to break the azeotropic point of water–isopropanol mixtures. From the temperature dependent diffusion and permeation values, the Arrhenius activation parameters were estimated. The activation energy values obtained for water permeation (E pw) are significantly lower than those of isopropanol permeation (E pIPA), suggesting that the Ge-incorporated membranes have higher separation ability for water–isopropanol system. The negative heat of sorption (∆H s) values was obtained for all the membranes, suggesting that Langmuir’s mode of sorption is predominant.

Phase formation and superconducting properties of mechanically alloyed Nb3(Al1−xGex) system

Mechanically alloyed Nb3(Al1−xGex) compounds with nominal composition x = 0%, 10%, 15%, 20%, 25% and 30% were synthesized using high-energy ball milling. The effects of Ge content and sintering temperature on the formation of the Nb3Al superconducting phase at a relatively low temperature without the extremely high-temperature rapid heating, quenching and transformation process were studied. The results revealed that Ge doping in Nb3Al improved the formation of the A15 phase at low temperatures, enhanced the superconducting transition temperature (Tc), and refined the grain structure, thus improving the overall superconducting properties. The pinning behavior was also studied for the optimized sample.

Effect of Ge content on the synthesis and structure of Ge-ITQ-13 zeolite

A series of ge-itq-13 zeolites with si/ge molar ratio from 10 to 40 were synthesized and characterized with xrd, ir, fe-sem, and si-29 mas nmr techniques. the results verified that almost of all the ge atoms in the synthesis gel was incorporated into the itq-13 framework. ge plays a structure-directing role in the crystallization process as a result of facilitating formation of double four-membered ring structural units. as a consequence, itq-13 zeolites can be synthesized with the synthesis gel having a high content of h2o in the presence of ge. si-29 mas nmr spectroscopy shows that the incorporated ge atoms are not randomly distributed in the ge-itq-13 framework but selectively occupy certain lattice sites.

The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys

AbstractThe aim of this work is to study the influence of the Ge content on the {113} defects formed, after a (35 keV, 1 × 1015 Ge+/cm2) preamorphization step followed by annealing at 680 °C, in relaxed SiGe alloys. For that, plan‐view Transmission Electron Microscopy (PTEM) under appropriate imaging conditions was used to study the {113} defects evolution as a function of the Ge content. Experimental results show that, increasing the Ge content results in a net reduction of both the density and the size of the {113} defects. Results analysis was performed in the framework of the “excess interstitials” model which describes perfectly the observed decrease of the {113} defects density in Si. Moreover, through a confrontation between the TEM observations and the predictions of this model, we show that the density of the interstitials contained in the defects (deduced from PTEM images) is a quasi linear function of the density of excess interstitials generated during the preamorphization step beneath the c/a interface, as calculated by the SRIM code. We conclude that collisional arguments can appropriately explain the observed evolution of the {113} defects density as a function of the Ge content. Meanwhile, the observed reduction of the {113} defects size with the Ge content, may be ascribed to a decrease of the transport capacity DiCi*, responsible for the defects growth. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)

Designing a gelatin/chitosan/hyaluronic acid biopolymer using a thermophysical approach for use in tissue engineering

Cell culture on biopolymeric scaffolds has provided treatments for tissue engineering. Biopolymeric mixtures based on gelatin (Ge), chitosan (Ch) and hyaluronic acid (Ha) have been used to make scaffolds for wound healing. Thermal and physical properties of scaffolds prepared with Ge, Ch and Ha were characterized. Thermal characterization was made by using differential scanning calorimetry (DSC), and physical characterization by gas pycnometry and scanning electron microscopy. The effects of Ge content and cross-linking on thermophysical properties were evaluated by means of a factorial experiment design (central composite face centered). Gelatin content was the main factor that affects the thermophysical properties (microstructure and thermal transitions) of the scaffold. The effect of Ge content of the scaffolds for tissue engineering was studied by seeding skin cells on the biopolymers. The cell attachment was not significantly modified at different Ge contents; however, the cell growth rate increased linearly with the decrease of the Ge content. This relationship together with the thermophysical characterization may be used to design scaffolds for tissue engineering.

Cu–Si1−xGex core–shell nanowire arrays as three-dimensional electrodes for high-rate capability lithium-ion batteries

We demonstrate the synthesis of new Cu–Si1−xGex core–shell nanowire array electrodes by directly depositing Si1−xGex layer on the surface of pre-synthesized Cu nanowire arrays via co-sputtering method. When used as anodes of lithium-ion batteries, the Cu–Si1−xGex (x=0.4) nanowire array electrodes show excellent electrochemical performance in terms of cycle stability and rate capability, which is much better than that of planar electrodes. The improved performance can be attributed to the good strain accommodation, fast electron transport and good electrical contact of the nanowire array electrodes. The effect of Ge content and the thickness of alloy film on the electrochemical performance of the three-dimensional electrodes have also been investigated.

High performance infra-red detectors based on Si/SiGe multilayers quantum structure

a b s t r a c t Recently, single crystalline (Sc) Si/SiGe multi quantum structure has been recognized as a new low-cost thermistor material for IR detection. Higher signal-to-noise (SNR) ratio and temperature coefficient of resistance (TCR) than existing thermistor materials have converted it to a candidate for infrared (IR) detection in night vision applications. In this study, the effects of Ge content, C doping and the Ni silicidation of the contacts on the performance of SiGe/Si thermistor material have been investigated. Finally, an uncooled thermistor material with TCR of −4.5%/K for 100 m × 100 m pixel sizes and low noise constant (K1/f) value of 4.4 × 10−15 is presented. The outstanding performance of the devices is due to Ni silicide contacts, smooth interfaces, and high quality multi quantum wells (MQWs) containing high Ge content.

Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device

Metal-oxide-semiconductor capacitors with HfAlO high-k gate dielectric deposited by Atomic Layer Deposition (ALD) and SiGe channel were studied in this work. A thin Si layer was also grown upon SiGe channel layer as a capping layer to form a Si/SiGe/Si structure on substrate. Different Ge contents from 7% to 32% in SiGe channel on electrical characteristics of MOS device were investigated. Based on gate leakage and reliability properties of MOS devices, the optimal Ge content in SiGe channel to achieve enough mobility enhancement is around 20%. The improvement of electrical characteristics includes low leakage current, small EOT value and good reliability.

Effect of Ge content on the metal and acid properties of Pt-Re-Ge/Al2O3-Cl catalysts for naphtha reforming

Abstract The effect of the Ge content on the properties of the metal and acid functions of trimetallic naphtha reforming catalysts of platinum-rhenium-germanium supported on chloride alumina was studied. Pt, Re and Ge were loaded using the coimpregnation method. The elemental concentration of the catalysts used was: Pt = Re = 0.3%; Ge = 0.1%, 0.3%, 0.6% and 0.9% (weight basis). In order to make a comparison Pt/Al 2 O 3 and Pt-Re/Al 2 O 3 catalysts were prepared. The properties of the acid and metal functions were studied by physicochemical techniques and using test reactions. Reforming of n-heptane (450 °C, 0.1 MPa, H 2 / n C 7 = 4, WHSV = 7.3) was used to evaluate the catalytic properties of the samples. It was found that the addition of small quantities of Ge (0.1%) decreased both the hydrogenolytic and dehydrogenation activities by breaking Pt-Re ensembles and modifying the electronic density of Pt. The latter was revealed by the decrease in the CO chemisorption capacity and the shift of the bands of linearly adsorbed CO. With respect to the acid function Ge addition produced a change in the acid strength distribution, increasing the amount of mild and weak acid sites and decreasing the amount of strong ones. This modification of the metal/acid balance had an effect over the distribution of products of n-heptane reforming. Both the isomerization activity and the stability of the catalyst were enhanced while the cracking and dehydrocyclization activities were decreased. The isoparaffins/aromatics ratio and the octane gain were improved and as a result the reformate product better adjusted to environmental regulations.

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Surface channel strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrates (VSs) have been established as an attractive avenue for extending Si CMOS performance as dictated by Moore's law. The performance of a surface channel Si n-MOSFET is significantly influenced by strained Si/SiO/sub 2/ interface quality. The effects of Ge content (20, 25, and 30%) in the VS and strained-Si thickness (6, 5.5, 4.7, and 3.7 nm) on the strained Si/SiO/sub 2/ interface have been investigated. The interface trap density was found to be proportional to the Ge content in the VS. Fixed oxide charge density reduces to a lower limit at higher strained-Si thickness for any Ge content in the VS, and the value increases as the strained-Si thickness is reduced. There is a high concentration of interface trap charge and fixed oxide charge present for devices with a strained-Si channel thickness below 4.7 nm. To investigate the effect of strained Si/SiO/sub 2/ interface quality on MOSFET devices fabricated using a high-temperature CMOS process, the performance of surface channel n-MOSFETs has been correlated with channel thickness. It is noted that the drain-current rapidly decreases at low gate voltages for channel thicknesses less than 4.7 nm. The performance of both MOS capacitors and MOSFETs degraded below a strained-Si thickness of 4.7 nm irrespective of the Ge content in the VS even up to 30%. TCAD simulations have been carried out to analyze the effect of strained Si/SiO/sub 2/ interface on electrical characteristics. Performance degradation in thin strained-Si channels is primarily attributed to gate oxide quality. The out-diffused Ge accumulates at the strained Si/SiO/sub 2/ interface, introducing a significant amount of interface traps and fixed oxide charges during thermal oxidation. Interface trap density and fixed oxide charge density significantly increased when the Ge concentration at the surface becomes more than 6%. This paper suggests that a minimum strained-Si layer thickness of /spl sim/ 5.0 nm is required to achieve a good strained Si/SiO/sub 2/ interface quality for surface channel strained-Si n-MOSFETs, fabricated using a high thermal budget CMOS process.