Effect Of B3 Research Articles

Endophytic fungus Phomopsis liquidambaris B3 induces rice resistance to RSRD caused by Fusarium proliferatum and promotes plant growth.

Rice spikelet rot disease (RSRD) is an emerging disease that significantly reduces rice yield and quality. In this study, we evaluated the potential use of the broad-spectrum endophytic fungus Phomopsis liquidambaris B3 as a biocontrol agent against RSRD. We also compared the control effects of different treatments, including chemical fungicides and treatment with multiple strains and single strains in combination or individually, against RSRD. The objective of this study was to find an effective and environmentally friendly control strategy to reduce the occurrence of RSRD and improve the rice yield. In pot experiments, the effect of B3 alone was better than that of fungicide or combined measures. The results showed that root colonization by B3 significantly reduced the incidence and disease index of RSRD by 41.0% and 53.8%, respectively. This was related to enhanced superoxide dismutase (SOD), peroxidase (POD), and polyphenol oxidase (PPO) activity, and to significantly upregulated expression levels of OsAOX, OsLOX, OsPAL, and OsPR10 in rice. Moreover, B3 improved the diversity of the bacterial community rather than the fungal community in the rice rhizosphere. It also led to a decrease in Fusarium proliferatum colonization and fumonisin content in the grain. Finally, root development was markedly promoted after B3 inoculation, and the yield improved by 48.60%. The result of field experiments showed that the incidence of RSRD and the fumonisin content were observably reduced in rice receiving B3, by 24.41% and 37.87%, respectively. The endophytic fungus Phomopsis liquidambaris B3 may become an effective tool to relieve rice spikelet rot disease. © 2020 Society of Chemical Industry.

Photoluminescence properties of thermographic phosphors YAG:Dy and YAG:Dy, Er doped with boron and nitrogen

This paper investigates Dy3+-doped and Dy3+, Er3+-co-doped yttrium aluminum garnets (YAG) with the admixture of boron nitride with the aim of using them as efficient thermographic phosphors at high temperatures. The phosphors were synthesized using a conventional high-temperature solid-state method. The influence of two fluxes, B2O3 and LiF/NH4F, and the effect of activator and coactivator concentrations were investigated. Additionally, the effect of B3+ and N3− substituting for Al3+ and O2− ions, respectively, in the YAG:Dy3+ co-doped with Er3+ was studied for the first time. The changes in the host lattice led to a much stronger photoluminescence compared with the samples without B3+ and N3− substitution. The admixture of BN also improves the thermal sensitivity of the YAG:Dy and YAG:Dy, Er thermographic phosphors.

Electrical properties and hyperfine interactions of boron doped Fe3O4 nanoparticles

The single spinel phase nano-structured particles of FeBxFe2−xO4 (x = 0.1, 0.2, 0.3, 0.4 and 0.5) were synthesized by the glycothermal method and the effect of B3+ substitution on structural and dielectric properties of Fe3O4 were studied. From 57Fe Mössbauer spectroscopy data, the variation in line width, isomer shift, quadrupole splitting and hyperfine magnetic field values on B3+ substitution have been determined. The hyperfine field values at B- and A-sites gradually decrease with increasing B3+ ion concentration (x). The cation distributions obtained from Bertaut method are in line with Mössbauer results. Complex impedance analysis of boron-substituted spinel ferrites have been made extensively in order to investigate the significant changes in ac and dc conductivity as well as complex permittivity when the boron composition ratio varies from 0.1 to 0.5. It is found that both ac and dc conductivity are also dependent on the boron content in addition to both temperature and applied frequency. The dc conductivity tendency does not purely obey the Arrhenius plots. The dielectric constant and loss of complex permittivity, in general, show similar attitudes as seen in some nanocomposites containing spinel ferrites except for some fluctuations and shifts along the characteristics of the curves. Furthermore, their imaginary components of both permittivity and modulus are almost found to obey the power law with any exponent values varying between 0.5 and 2 in accordance with the level of boron concentrations.

Effect of Boron Nitride (BN) on Luminescent Properties of Y3Al5O12:Ce Phosphors and their White Light‐Emitting Diode Characteristics

This article reports a low‐cost yellow‐emitting Y3Al5‐xBxO12‐xNx:Ce3+ phosphor with an enhanced luminescent intensity and excellent thermal stability for white light‐emitting diodes (LEDs). It was synthesized by a simple gas‐pressure sintering (GPS) process. The effect of B3+–N3− incorporation on the optical properties of Y3Al5O12:Ce3+ phosphor was investigated. The addition of appropriate amounts of boron nitride (BN) leads to a marked increase in photoluminescent intensity and a slight shift of its emission spectra toward the blue region, which is assigned to the improved crystallinity and increased particle size. Especially, the prepared oxynitride phosphor does not exhibit any thermal quenching under high temperature, and the emission intensity at 250°C even increases up to 175% of that measured at 20°C. Finally, the white LED flat lamp with luminous efficiency as high as 101 lm/W, color rendering index of 72, and correlated color temperature of about 6600 K is successfully realized by using YAG:Ce3+ phosphor doped with 0.5 molar ratio BN, which is acceptable and promising for general indoor illuminations to replace fluorescent or incandescent lamps.

硼组分在 BaAl2Si2O8∶Eu2+发光材料中的作用

A series of phosphors Ba0.955Al2-xBxSi2O8∶Eu2+(x=0～0.5) were prepared by solid-state reaction in weak reductive atmosphere.The lattice positions and the luminescent mechanism of Eu2+ in the host were discussed.The effects of B3+-substitution on the host lattices and spectral properties were also investigated.It was found that when B3+ entered BaAl2Si2O8 lattice and substituted for Al3+ complete solid solutions formed in the whole range of x=0～0.5.The lattice parameters(a,b,c) and unit cell volume of phosphors Ba0.955Al2-xBxSi2O8∶ Eu2+(x=0～0.5) decreased linearly and lattice parameter β increased linearly as boron content increased.A broad excitation spectrum consists of four excitation bands,which locate between 225 nm and 400 nm,its peak wavelength is at 337 nm,and basically does not change with the content of B3+.The full width at half maximum is 93 nm.The emission spectrum is also a broad band between 370 nm and 600 nm and its apparent peak is at 437 nm,which can be fitted by two peaks at 423 nm and 457 nm.Two fitted peaks are blue shifted with the increasing of the content of B3+-substitution.

Thermodynamic properties of elpasolites Rb2KB3 F6(B3 : Er, Ho)

The heat capacities of Rb2KHoF6 and Rb2KErF6 have been investigated over a wide temperature range 150-430 K including the temperatures at which the phase transitions Fm3m → P21/n occur. The pressure dependence of phase transition temperatures, studied up to 0.6 GPa was found to be nonlinear. Effect of B3+ ion size both on entropy of structural transformation and dT0dp is discussed for Rb2KB3+F6 series.

Effects of B3+ content of B-ZSM-11 and B-ZSM-5 on acidity and chemical and thermal stability

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTEffects of B3+ content of B-ZSM-11 and B-ZSM-5 on acidity and chemical and thermal stabilityMark W. Simon, Sang Sung Nam, Wen Qing Xu, Steven L. Suib, John C. Edwards, and Chin Lin O'YoungCite this: J. Phys. Chem. 1992, 96, 15, 6381–6388Publication Date (Print):July 1, 1992Publication History Published online1 May 2002Published inissue 1 July 1992https://doi.org/10.1021/j100194a052RIGHTS & PERMISSIONSArticle Views344Altmetric-Citations31LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (2 MB) Get e-Alerts

ESR studies on heterogeneous processes in irradiated SiO2/B2O3+H2O systems

Effect of B3+ (%B2O3) percentage ratio in silica gel on the nature and the mechanism of defect formation and yields of paramagnetic radiation centers (PC) have been studied. The nature of paramagnetic radiation centers of electron hole type has been revealed and their behavior has been investigated as a function of temperature changes. It has been found that the interaction between paramagnetic centers formed at SiO2/B2O3 surface with absorbed water molecules (θ=1) leads to the formation of H and OH radicals. In addition the experiment shows that increased B3+ (%B2O3) percentage ratio in silica gel results in higher yields of paramagnetic centers and H-radicals. Possible mechanism of formation, localization and annihilation of non-equilibrium charge carriers (NCC) and their energy transfer to the adsorbed phase has been suggested.