Effect Of Anodizing Conditions Research Articles

The Effects of Anodization Conditions on TiO2 Nanotubes Features Obtained Using Aqueous Electrolytes with Xanthan Gum

Titanium surfaces were anodized to create nanotube structures utilizing an aqueous electrolyte made of xanthan gum (XG) and sodium fluoride. The purpose of employing this type of anodizing solution was to investigate the impact of XG addition on the morphology and organization of nanotubes. As far as we know, this is the first time that TiO2 nanotubes, made using aqueous electrolytes with XG as an additive, have been reported. The organization of the nanotubes was measured using the regularity ratio (RR) from the fast Fourier transformation (FFT) pictures. Contrary to the nanotubes formed in aqueous solutions without XG, the addition of XG to the aqueous electrolyte improved the nanotube organization, with no effect on packability. Based on the findings of this experimental work, organized and homogeneous nanotubular structures might be produced utilizing an inexpensive and non-toxic aqueous electrolyte.

Effects of anodization conditions on subsequent hydride corrosion of uranium metal

Effects of anodization conditions on subsequent hydride corrosion of uranium metal

The effect of anodization conditions on the morphology of porous tungsten oxide layers formed in aqueous solution

Nanostructured WO3 layers were obtained by one-step anodic oxidation of tungsten in an aqueous solution containing fluoride ions. A detailed investigation of the growth of anodic films on metallic substrate was focused on the study of the influence of anodization conditions, such as anodization potential, duration of the process, electrolyte composition, applied temperature, and electrolyte agitation on morphological features of as-received materials. Such kind of comprehensive studies has been performed for the first time. It was found that the optimal conditions allowing synthesis of nanostructures with well-defined pores and the thickest possible oxide layer are: anodization potential of 50 V, anodization time of 4 h, the electrolyte containing 1 M ammonium sulfate and 75 mM ammonium fluoride, temperature of 20 °C, and agitation of electrolyte of 250 rpm. A post-treatment procedure was developed to effectively remove the precipitates formed on the surface of anodic layers during anodization. The obtained materials were also examined as photoanodes in photoelectrochemical (PEC) water splitting experiments. It was confirmed, that PEC performance of nanostructured WO3 photoanodes can be significantly improved (higher photocurrents by 24%) after ultrasonic treatment in a 20 wt% HF solution for 10 s and ethanol for 5 s.

Fabrication of iron oxide nanotube arrays by electrochemical anodization

Highly ordered iron oxide nanotubes with smooth and homogeneous wall were electrochemically synthesized by potentiostatic anodization of iron foil in an ethylene glycol based electrolyte containing NH4F and deionized water at 60°C. A model was proposed to explain the formation mechanism. The effects of anodization conditions, such as potential, H2O concentration, NH4F concentration, temperature and thermal treatment, on morphology and structural features of the oxide layer were thoroughly investigated. It is shown that the current transient curve can be used as a tool to approximately predict the morphology and the formation of nanotube during the anodization of iron.

Self-Organized High Aspect Ratios Titanium Oxide Nanotube Arrays Prepared by Anodization

The self-organized nanotube arrays were fabricated in glycerol electrolyte containing different additives, such as deionized water or ethylene glycol. The effects of anodization conditions, including anodic voltage, electrolyte viscosity, additives and ion concentration on the pores size and morphology were studied. Combined with preoxidation process, high aspect ratio titania nanotube arrays were formed rapidly in glycerol and saturated NaF solutions at 60 V for 1 h. SEM observation showed that a film with the thickness of about 10μm was obtained. A possible mechanism of the nanotubes growth was presented.

Effect of anodization conditions on the synthesis of TiO2 nanopores

ABSTRACTNanoporous structures play a promising role in the development of nanomechanical, nanoelectrical and biosensing devices. In addition, nanopores can be utilized as chemical and gas sensors. TiO2 is a semiconductor material, which can have a wide range of applications in nanopore-based sensors. In this study, TiO2 nanopores were prepared by electrochemical anodization. Titanium was used as the anode, while platinum was used as the cathode in an electrochemical cell filled with a hydrofluoric acid electrolyte solution. During the preparation process, titanium was converted to its oxide form. Nanostructures were synthesized under varying physical conditions, including HF concentrations of 0.5-10% and anodization times of 5-30 minutes. The resulting nanopore structures were characterized by scanning electron microscopy (SEM). With a progressive increase in HF concentration (from 0.5% to 10%), the diameter of the nanopores decreased, from approximately 100 nm in diameter to 50 nm. The nanopores showed a transformation from tube-like structures to pore networks with increased HF concentration or anodization time. The results show that the dimensions and morphology of the nanopores can be controlled by alteration of the anodization conditions.

Thin film transistors with anodic gate dielectrics and chemical bath deposited active layers

Thin film transistors (TFTs) with an anodic dielectric layer and chemical bath deposited active layer have been fabricated on glass substrates. The effects of anodization conditions on the quality of the anodic dielectric were investigated by measuring the breakdown electric field and leakage current density of the metal–insulator–metal capacitors fabricated. Using the anodic gate dielectric, preliminary thin film transistors with CdS and CdSe films formed by a chemical bath deposition method were fabricated and evaluated. Results of electrical measurements carried out on the CdSe-TFTs with Al2O3 and Ta2O5 gate dielectrics showed field effect mobilities of 3.4 and 0.67 cm2/V s and threshold voltages of 3.2 and 8.2 V, respectively. Field effect mobilities of 0.2 and 2 cm2/V s and threshold voltages of 4.3 and 5.2 V were observed for CdS-TFTs, again with Al2O3 and Ta2O5 gate dielectrics. The mobilities obtained from the present TFTs fabricated on glass substrates are smaller than that on similar TFTs fabricated on thermally grown gate oxides on Si substrates in our previous work.