Edge Coupling Research Articles

Streamlined line-defect taper design for broadband and efficient mode coupling: connecting a silicon strip with a planar valley photonic crystal zigzag interface.

The integration of planar valley photonic crystal (VPC) interfaces into high-speed data communication chips markedly improves data rates and system robustness. This Letter presents a novel, to the best of our knowledge, edge coupler, termed the line-defect taper, which is crucial for efficient and broadband light delivery to planar VPC interfaces via silicon strip waveguides. The coupling performance of the line-defect taper is evaluated through full-wave three-dimensional finite-element simulations. The results demonstrate a -3 dB transmission bandwidth of 65.5 nm, covering 41.2% of the topological bandgap, and a -1 dB transmission bandwidth of 16.3 nm, accounting for 10.3%. With its compact design (only 3.6 µm in length), simplicity, and scalability, the line-defect taper is a promising candidate for integration into densely packed chips, highlighting its potential in advancing on-chip devices.

High-efficiency and easy-processing thin-film lithium niobate edge coupler

Fiber-to-chip coupling with ultralow loss and broadband operation wavelength range is essential in the practical applications of thin-film lithium niobate (TFLN) integrated photonic devices. However, the existing edge couplers often require electron beam lithography overlaying and multiple etching processes, which are expensive and complex. In this Letter, we demonstrate an edge coupler that includes only a vertically tapered TFLN waveguide and silicon dioxide cladding. The coupling efficiency between a lensed fiber and an on-chip LN waveguide is down to 1.43 dB/facet, while the 3-dB bandwidth exceeds the range from 1510 to 1630 nm. These edge couplers also show reliable fiber misalignment tolerance. Furthermore, the fabrication complexity is greatly reduced since only a single etching step for the TFLN waveguide is needed. The minimum waveguide width of 1.3 μm guarantees compatibility with i-line photolithography, providing a potential for massive production of TFLN devices.

Ultra-broadband multimode fiber-to-chip edge coupler based on periodically segmented waveguides.

Mode-division multiplexing (MDM) technology demonstrates a bright outlook for enhancing the capacity of chip-scale or fiber-based optical communication. Nevertheless, the fiber-to-chip MDM optical interconnects are hindered by the considerable mode mismatch and inter-modal cross talk between the few-mode fiber (FMF) and on-chip few-mode waveguide (FMW). In this Letter, a new, to the best of our knowledge, multimode coupling solution based on periodically segmented waveguides for the MDM system is proposed, which achieves efficient conversion between LP01, LP11a, and LP11b modes in FMF and E11, E21, and E12 modes in FMW with low refractive index difference. The simulation results show that the coupling loss is less than 0.41, 0.27, and 0.90 dB for the three modes, over the wavelength range of 1100-1800 nm. The fabricated device based on a polymer platform shows low fiber-to-chip coupling losses of less than 1.8, 1.7, and 3.0 dB, respectively, over a 130 nm wavelength. The presented scheme provides a competitive solution for realizing the ultra-efficient integration of prospective fiber-chip optical interconnections and communications.

Enhancing chemistry-intuitive feature learning to improve prediction performance of optical properties.

Emitters have been widely applied in versatile fields, dependent on their optical properties. Thus, it is of great importance to explore a quick and accurate prediction method for optical properties. To this end, we have developed a state-of-the-art deep learning (DL) framework by enhancing chemistry-intuitive subgraph and edge learning and coupling this with prior domain knowledge for a classic message passing neural network (MPNN) which can better capture the structural features associated with the optical properties from a limited dataset. Benefiting from technical advantages, our model significantly outperforms eight competitive ML models used in five different optical datasets, achieving the highest accuracy to date in predicting four important optical properties (absorption wavelength, emission wavelength, photoluminescence quantum yield and full width at half-maximum), showcasing its robustness and generalization. More importantly, based on our predicted results, one new deep-blue light-emitting molecule PPI-2TPA was successfully synthesized and characterized, which exhibits close consistency with our predictions, clearly confirming the application potential of our model as a quick and reliable prediction tool for the optical properties of diverse emitters in practice.

300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production

Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15×106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.

Asymmetric bi-level dual-core mode converter for high-efficiency and polarization-insensitive O-band fiber-chip edge coupling: breaking the critical size limitation

Abstract Efficient coupling between optical fibers and on-chip photonic waveguides has long been a crucial issue for photonic chips used in various applications. Edge couplers (ECs) based on an inverse taper have seen widespread utilization due to their intrinsic broadband operation. However, it still remains a big challenge to realize polarization-insensitive low-loss ECs working at the O-band (1,260–1,360 nm), mainly due to the strong polarization dependence of the mode coupling/conversion and the difficulty to fabricate the taper tip with an ultra-small feature size. In this paper, a high-efficiency and polarization-insensitive O-band EC is proposed and demonstrated with great advantages that is fully compatible with the current 130-nm-node fabrication processes. By introducing an asymmetric bi-level dual-core mode converter, the fundamental mode confined in the thick core is evanescently coupled to that in the thin core, which has an expanded mode size matched well with the fiber and works well for both TE/TM-polarizations. Particularly, no bi-level junction in the propagation direction is introduced between the thick and thin waveguide sections, thereby breaking the critical limitation of ultra-small feature sizes. The calculated coupling loss is 0.44–0.56/0.48–0.61 dB across the O-band, while achieving 1-dB bandwidths exceeding 340/230 nm for the TE/TM-polarization modes. For the fabricated ECs, the peak coupling loss is ∼0.82 dB with a polarization dependent loss of ∼0.31 dB at the O-band when coupled to a fiber with a mode field diameter of 4 μm. It is expected that this coupling scheme promisingly provides a general solution even for other material platforms, e.g., lithium niobate, silicon nitride and so on.

Foundry manufacturing of octave-spanning microcombs.

Soliton microcombs provide a chip-based, octave-spanning source for self-referencing and optical metrology. We use a silicon nitride integrated photonics foundry to manufacture 280 single-chip solutions of octave-spanning microcombs on a wafer. By group-velocity dispersion (GVD) engineering with the waveguide cross section, we shape the soliton spectrum for dispersive-wave spectral enhancements at the frequencies for f-2f self-referencing. Moreover, we demonstrate the other considerations, including models for soliton spectrum design, ultra-broadband resonator external coupling, low-loss edge couplers, and the nonlinear self-interactions of few-cycle solitons. To cover the fabrication tolerance, we systematically scan 336 parameter sets of resonator width and radius, ensuring at least one device on each chip can yield an octave-spanning comb with an electronically detectable carrier-envelope offset frequency, which has been supported by our experiment. Our design and testing process permit highly repeatable creation of single-chip solutions of soliton microcombs optimized for pump operation ∼100 mW and high comb mode power for f-2f detection, which is the central component of a compact microsystem for optical metrology.

Coupled topological edge and corner states in two-dimensional phononic heterostructures with nonsymmorphic symmetries

The exciting discovery of topological phononic states has aroused great interest in the field of acoustic wave control. However, conventional topological edge states and corner states localized at the interface and corner of the two-phase domain wall structures are limited by single channel transmission characteristics, which decreases the flexibility of designing multi-channel acoustic wave devices. Here, we propose a two-dimensional (2D) topological phononic heterostructure with nonsymmorphic symmetries to realize the multiple interface topological multimode interference effect based on the coupling of topological edge and corner states. Topological phase transitions are achieved by altering the rotation angle of the split-ring scatterers in a square lattice. The coupled edge states are generated by the coupling between the edge states of ordinary-topological-ordinary (OTO) interfaces. Moreover, the higher-order topology of the square phononic crystals (PCs) is characterized by nontrivial bulk polarization, the topological and coupled corner states splitting into two pairs appear in the square OTO bend structure owing to the nonsymmorphic PC lack of mirror symmetries. Finally, the topological robustness of the multimode interference effect of coupled edge and corner states against defects is demonstrated. Our results pave the way for guiding and trapping acoustic waves in topological nonsymmorphic heterostructures, whose multi-channel transmission capability can be employed for designing topological phononic filters, couplers and multiplexers.

Broadband and easily fabricated double-tip edge coupler based on thin-film lithium niobate platform

Due to the significant difference in spot size between lithium-niobate-on-insulator (LNOI) waveguide and fiber, there is a substantial coupling loss between them, which limits the interconnection and application of LN photonic chips. Although some LNOI edge couplers have been designed and fabricated with low coupling loss between chip and fiber, they require high etching accuracy. In this paper, a low-loss, broadband and easily fabricated edge coupler is designed and fabricated on the LNOI platform. To reduce the etching requirement for tip width, a design has been adopted with symmetrical double tips at the edge. Additionally, a multimode interferometer (MMI) is introduced to ensure large fabrication tolerance. The proposed design only requires a single full etching step, significantly reducing stringent requirements for process with high precise. Experimental results demonstrate that the device exhibits a coupling loss less than 3.5 dB/facet in the wavelength range of 1500–1640 nm, while achieving a low coupling loss of 2.71 dB/facet at 1550 nm.

Design of high-efficiency InP/InGaAsP diluted waveguide for edge couplers

To transition integrated optical communication devices from laboratory settings to practical applications, efficient coupling between optical fibers and chip waveguides remains pivotal. This paper presents a systematic design of a diluted waveguide, a key component in the edge couplers of photonic integrated circuits. The primary purpose of the diluted waveguide lies in facilitating superior edge coupling with fiber waveguides, thereby seamlessly integrating external light sources into the waveguide structure. To commence, we employ the transfer matrix and effective refractive index techniques to simplify the 3-dimensional diluted waveguide into 2-dimensional multi-layer slab waveguides. By computing the field distribution of the fundamental mode within the diluted waveguide, the fiber-to-waveguide coupling efficiency can be derived using a simplified overlap equation and optimized diluted waveguide structure through particle swarm optimization algorithms. Consequently, we achieve a remarkable fiber-to-waveguide coupling efficiency exceeding 95% for TE-mode and 92% for TM-mode, with a polarization dependent loss (PDL) of merely 0.13 dB. Interestingly, the optimized diluted waveguide exhibits quasi-single mode behavior, as the fundamental mode containing 98% of the total energy propagates within it. Additionally, the diluted waveguide edge coupler demonstrates favorable alignment tolerance, with 1-dB excess losses of ±2.3 μm and (−2.5, +3) μm along the horizontal and vertical directions, respectively. Notably, our approach offers a versatile methodology for designing multi-layer waveguides across various materials. This method has the potential to be universally applied.

O-band and C-band dual-polarization SMF-28 edge coupler with SiON taper cladding based on silicon nitride platform

Optical communication is progressing towards low power consumption and lightweight solutions, necessitating the integration of multispectral output capabilities within a single optical module. We demonstrate a SiN photonic platform-based edge coupler for a standard single mode fiber (SMF) that enables operation in both the O-band and C-band simultaneously. The device is composed of a multi-segment SiN inverse taper and SiON taper cladding with specific refractive index. The measured edge coupler exhibits a coupling loss of less than 1 dB/facet, 0.5 dB bandwidth exceeding 100 nm from 1260 nm to 1360 nm; and a coupling loss of less than 2 dB/facet, 1 dB bandwidth exceeding 100 nm from 1500 nm to 1600 nm. Furthermore, the polarization dependent loss (PDL) remained less than 0.3 dB throughout the measurement range.

Trident edge coupler on thin-film lithium niobate for optimized coupling of octave-separated wavelengths for nonlinear applications

We introduce a trident edge coupler design optimized for the simultaneous coupling of two widely separated wavelengths (2 µm and 1 µm) between a lensed fiber and a 600-nm-thick X-cut lithium-niobate-on-insulator (LNOI) waveguide. These wavelengths are commonly encountered in nonlinear wave mixing applications, representing either the fundamental and second harmonics in second harmonic generation (SHG) processes or the leading and trailing edges of an octave-spanning spectrum generated through broadband nonlinear processes such as frequency comb or supercontinuum generation. Achieving efficient coupling between fibers and strongly confined waveguides in integrated platforms, such as LNOI, can be challenging due to the significant difference in spot sizes between the two wavelengths. Our trident edge coupler offers coupling losses below 1.4 dB for the 2 µm and 1 µm spots simultaneously, showcasing an average transmission enhancement of around 10% compared to the baseline of a single linear taper. Furthermore, it enables a reduction of transmission at 1.5 µm, a typical pump wavelength, with an attenuation of transmission over 10 dB compared to those at the 2 µm and 1 µm wavelengths.

Packaging of micro-lens arrays to photonic integrated circuits using beam shape evaluation

We propose a method for aligning and attaching micro-lens arrays to photonic integrated circuits (PICs). Unlike the conventional approach of assessing power coupled to a fiber directly, our method utilizes a beam profiler. This profiler allows us to optimize the lens position by analyzing the transmitted beam shape from the PIC edge coupler through the lens. In conjunction, we employ grating couplers to introduce external light, acting as a ‘beacon’ for optimization. The use of grating couplers enables efficient coupling of external light into the PIC, providing a reference point for alignment. Importantly, our method accommodates both regular waveguide-side-up and upside-down (through-Silicon) orientations of the PIC. This versatility allows us to reproduce coupling results across a 6-channel array, demonstrating robust performance. This innovative approach not only ensures precise alignment and attachment but also opens up new possibilities for photonic packaging. The flexibility to work in different orientations is likely to lead to advancements in the design and assembly of photonic devices.

Optimum core structural design of the polymer optical waveguides as edge couplers for co-packaging

We simulate the optical properties of polymer optical waveguides with different refractive index profiles in their cores as coupling components (edge couplers) between single-mode fiber and SiOx waveguides. In this paper, we focus on the single-mode operation of graded-index (GI) core polymer waveguides, for which we previously demonstrated low propagation loss under multimode operation. We design the optimum core structure (size and index contrast) for different refractive index profiles, and then demonstrate the unique optical properties of GI waveguides contributing to the low optical loss compared to the step-index counterparts, in particular, mode field diameter variation and taper angle tolerance.

Ultralow-loss polarization-insensitive silicon nitride-assisted double-etched silicon edge coupler with polarization splitting

High-performance silicon-based edge couplers for interfacing with standard single-mode fibers encounter significant challenges due to limitations imposed by the minimum fabrication width. Here, we propose a silicon nitride-assisted double-etched O-band silicon edge coupler with a minimum width of 180 nm. Notably, the polarization splitting function naturally integrates into this edge coupler. Through simulation, the proposed edge coupler, without a cantilever, demonstrates a minimum coupling loss of 0.53/0.82 dB with an average extinction ratio of 42/18 dB for TE/TM polarization. Additionally, this edge coupler exhibits weak polarization dependence with an average difference of only 0.24 dB in the O band. Leveraging a segmented taper shape design, the 0.5-dB bandwidth of coupling loss extends to approximately 100 nm for both TE and TM polarizations, despite the inclusion of two evanescent coupling parts.

Enhanced efficiency of correlated photon pairs generation in silicon nitride with a low-loss 3D edge coupler

We demonstrate the generation of correlated photon pairs by using a hybrid integrated quantum photonic platform, where the dual-layer platform consists of a high-index doped silica glass (HDSG) layer to accommodate low-loss linear components and an SiN-based layer to accommodate the photon source. Leveraging the low-loss fiber coupling to the HDSG waveguide and the high nonlinearity of the SiN waveguide, we experimentally realize integrated source of photon pairs with high heralding efficiency. The directly measured photon pair rate is up to 87 KHz (corresponding to 1.74 × 10−3 pairs per pulse) when the coincidence-to-accidental ratio is greater than 10. The raw heralding efficiency can reach 18%. If the filtering loss is excluded, the heralding efficiency can further reach 29%.

A full wave solver integrated with a Fokker–Planck code for optimizing ion heating with ICRF waves for the ITER deuterium–tritium plasma

Efficient ion heating is crucial for future fusion devices, and the only way to heat ions directly is ion cyclotron resonance heating. Reported here is a full wave solver integrated with a Fokker–Planck code for optimizing ion heating with ion cyclotron range of frequency waves for the International Thermonuclear Experimental Reactor deuterium–tritium plasma. Both the direct absorption of minority ions and the power transfer to bulk ions via collisions are considered, while also accounting for the edge effects on ion absorption near the core. The simulation results show that the appropriate scrape-off layer density profile and parallel wave number lead to enhanced edge coupling and broaden the absorption region with moderate absorption intensity of the minority ions, which is very important for ion heating. More power from the heated ions is transferred to bulk ions than to electrons through collisions in our simulation via optimization, and reducing the total RF power results in a significant increase of the absorbed fraction of bulk ions.

High‐Efficiency Fiber‐Chip Edge Coupler for Near‐Ultraviolet Integrated Photonics

AbstractIntegrated photonics is demanded in applications operating at ultraviolet to visible wavelengths, such as atomic/quantum systems, on‐chip broadband receivers, and far‐field structured illumination autofluorescence microscopy. A fundamental challenge in these applications is efficient edge coupling from a single‐mode fiber (SMF) to on‐chip photonic components, which is critical for on‐chip integration. In this paper, a high‐efficiency edge coupler based on an alumina‐on‐insulator platform is introduced and experimentally validated. The coupler employs a symmetric double‐tip taper and a multimode interference (MMI)‐based optical combiner. The double‐tip taper effectively expands the mode field diameter at the chip facet to match that of the SMF at the initial stage. Then the MMI‐based combiner efficiently combines the two channels in the taper into a highly confined strip waveguide. A coupling loss of 2.85 dB/facet has been achieved for the transverse magnetic mode at the wavelength of 407 nm, which is the lowest insertion loss for fiber‐chip coupling on this platform to the best of the knowledge. The design can significantly reduce the insertion loss associated with fiber‐chip coupling, offering a key component for diverse areas ranging from atomic/quantum photonic integrated circuits and ultra‐high capacity communications to optical microscopes.

Integrated thin-film lithium niobate electro-optic frequency comb for picosecond optical pulse train generation

In recent years, high-performance thin-film lithium niobate (TFLN) electro-optic (EO) modulators boost the fast development of highly integrated, low loss, and large comb spacing EO frequency combs. Furthermore, ultra-short optical pulse trains (USOPTs) can be generated by the temporal domain compression of the optical frequency comb, which play an essential role in photonic sampling analog-to-digital conversion. Here, we demonstrate a flat and broadband EO frequency comb based on a packaged TFLN chip including a monolithic integrated intensity modulator, a phase modulator, and edge couplers. The 25 comb lines with a power fluctuation less than 3 dB are presented successfully. Moreover, we obtain a 10 GHz repetition rate USOPT, the pulse width of which is compressed to 2.67 ps. Our device may find its applications in the fields of ultrafast measurement, wavelength-division-multiplexing optical communication, or high-precision photonic sampling.

Polarization-insensitive and high-efficiency edge coupler for thin-film lithium niobate.

In this Letter, we propose and demonstrate a fiber-to-chip edge coupler (EC) on an x-cut thin film lithium niobate (TFLN) for polarization-insensitive (PI) coupling. The EC consists of three width-tapered full-etched waveguides with silica cladding and matches well with a single-mode fiber (SMF). The measured results show that the minimum coupling losses for TE0/TM0 modes remain to be 0.9 dB/1.1 dB per facet, and the polarization dependent loss (PDL) is <0.5 dB over the wavelength range from 1260 to 1340 nm. Moreover, the EC features large misalignment tolerance of ±2 µm in the Z direction and ±1.5 µm in the X direction for both polarizations for a 1 dB penalty. To the best of our knowledge, this is the first realized O-band edge coupler on TFLN with SMF. The proposed device shows promising potential for integration into TFLN polarization diversity devices.