Dual-band Focal Plane Array Research Articles

Nature Allows High Sensitivity Thermal Imaging With Type-I Quantum Wells Without Optical Couplers: A Grating-Free Quantum Well Infrared Photodetector With High Conversion Efficiency

Quantum well infrared photodetectors (QWIPs) have facilitated thermal imagers with excellent pixel operability, uniformity and stability. The main disadvantage of the standard QWIP technology is the low conversion efficiency (CE) as a result of weak quantum efficiency (QE) and photoconductive gain inhibiting the utilization of the sensor for low background and/or high frame rate applications. The other problem is the requirement of an optical grating which loses its efficiency with decreasing pixel pitch, as well as limiting the performance of dual-band focal plane array (FPA) due to the wavelength dependence of the diffraction-grating coupling efficiency. The author reports a grating-free 15 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> pixel pitch <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$640\times 512$ </tex-math></inline-formula> mid-wavelength infrared (MWIR) QWIP FPA constructed with the InP/GaInP/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.83</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.17</sub> As material system with normal incident radiation absorption ability. The pixels yielded peak QE, CE and specific detectivity of 23%, ~40% and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1\times 10 ^{11}$ </tex-math></inline-formula> cmHz <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> /W (at ~80 K with f/2 optics) in spite of the absence of diffraction grating, substantially high cut-off wavelength (5.8 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> ) and broad spectral response ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta \lambda /\lambda _{\mathbf {p}}=31$ </tex-math></inline-formula> %). Together with excellent (uncorrected) responsivity and noise equivalent temperature difference nonuniformities of 5.9% and 17%, the results illustrate tremendous improvement over the performance of the conventional MWIR QWIP FPA exhibiting great potential to revive the QWIP technology especially in dual-band imaging.

A Dual-Band Focal Plane Array of Kinetic Inductance Bolometers Based on Frequency-Selective Absorbers

Passive imaging cameras at submillimeter wavelengths with large format focal plane arrays (FPAs) are being developed as the next generation of security screening systems. In this contribution, a dual-band FPA for security imagers at submillimeter wave frequencies is presented. The detectors are based on bolometric superconducting kinetic inductance resonators, which allow the development of large FPAs at medium-cooled temperatures. Two frequency-selective absorber (FSA) sets coupled to superconductive resonator lines are designed to implement a dual-color security imager. The performance of the dual-band imager is evaluated using spectral analysis approach that combines Fourier optics with a Floquet-mode field representation. The geometry of the unit cells is based on a Jerusalem cross configuration and the designed FSAs show a stable angular response and a rejection 1 to 3 of the undesired bandwidth. The detectors in the dual-band FPA are distributed over a hexagonal grid to maximize their physical size and then improve their sensitivity. The effective point spread function of the imager coupled to a black-body point source over a wide frequency band (1:6) was demonstrated experimentally with excellent agreement to the one estimated by using the proposed spectral technique.

High-Performance M/LWIR Dual-Band HgCdTe/Si Focal-Plane Arrays

Mercury cadmium telluride (HgCdTe) grown on large-area silicon (Si) substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive cadmium zinc telluride (CdZnTe) substrates. In this work, the use of HgCdTe/Si for mid- wavelength/long-wavelength infrared (M/LWIR) dual-band FPAs is evaluated for tactical applications. A number of M/LWIR dual-band HgCdTe triple-layer n-P-n heterojunction device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. Wafers exhibited low macrodefect densities (< 300 cm−2). Die from these wafers were mated to dual-band readout integrated circuits to produce FPAs. The measured 81-K cutoff wavelengths were 5.1 μm for band 1 (MWIR) and 9.6 μm for band 2 (LWIR). The FPAs exhibited high pixel operability in each band with noise-equivalent differential temperature operability of 99.98% for the MWIR band and 98.7% for the LWIR band at 81 K. The results from this series are compared with M/LWIR FPAs from 2009 to address possible methods for improvement. Results obtained in this work suggest that MBE growth defects and dislocations present in devices are not the limiting factor for detector operability, with regards to infrared detection for tactical applications.

Issues in HgCdTe Research and Expected Progress in Infrared Detector Fabrication

The purpose of this paper is to review the trends in HgCdTe research, illustrating the discussed ideas with the latest results obtained at DEFIR (CEA-LETI and Sofradir joint laboratory). The beginning of this paper is devoted to an extended introduction to today’s issues concerning HgCdTe photodiode performance enhancement. In fact, very high-quality material is mandatory for ultrahigh performance at low temperature as well as for high noise operability at high operating temperature (HOT). Therefore, a strong effort has been carried out during the last few years for lattice-matched CdZnTe substrate and HgCdTe active layer growth improvement, leading to very large substrates and ultraflat liquid-phase epitaxy layers. The same analysis holds for diode process quality and passivation. Therefore, the photodiode process has been completely revisited in order to optimize HOT operability. Also necessary for the next generation of HOT devices, some significant progress has been made in small-pixel-pitch interconnection on silicon read-out circuits. Indeed, the first 10-μm focal-plane arrays (FPAs) have been successfully fabricated this year in the mid-wave infrared (IR) band. The latest avalanche photodiode (APD) realizations are also presented with 15-μm-pitch FPAs for passive imaging and 30-μm-pitch ultrafast arrays running at 1.5 kHz full frame rate. Linear-mode photon counting using APDs is also briefly discussed. Finally, the paper concludes on more complex structures for the third generation of IR detectors, discussing the latest achievements in dual-band FPA fabrication in various spectral bands.

Space-based hyperspectral technologies for the thermal infrared

Various approaches now exist for obtaining spectral imagery over a broad range of infrared wavelengths. One approach involves the use of a single grating element in two grating orders with dualband focal plane array (FPA) technology. This approach offers greater efficiency over the mid-wave infrared and long-wave infrared and eliminates the need for separate FPAs, dispersing elements, and optical beamsplitters. Another approach achieves similar results by exploiting an FPA which has a broad wavelength response with an innovative grating which has useable efficiency that extends beyond the single octave limits of traditional gratings. Significant advantages result, in either case, for space-based hyperspectral imagers, for which a reduction in cryo-cooled mass translates into prodigious savings in overall payload mass, cryo-cooling requirements, and waste heat removal. By contrast, longer term approaches might realize infrared “hyperspectral pixels” in two-dimensional imaging FPAs. In this case, each pixel would detect different wavelengths of radiation, at different depths, and the resulting “spectral photocurrents” would be transported to read-out circuitry through a vertical grid of electrical contacts. Although not yet realized in practice, the conceptual basis for accomplishing this, with the widely available HgCdTe detector material, has been described. With regard to employment, space-based thermal hyperspectral imaging is characterized by coarser ground resolution as a result of aperture diameter limitations and diffraction considerations at the longer infrared wavelengths. The resulting subpixel detections, based on spectral signature, are often complementary with higher resolution, shorter wavelength, panchromatic imagery.

Dual band infrared picture-in-picture systems

Dual band infrared focal plane arrays (FPA) are designed to act as two independent focal planes located at a common image plane which detects both the mid-wave infrared and the long-wave infrared images. The imagery produced is simultaneous and separable for the two bands. Systems utilizing these focal planes have often been designed to operate the same way as single band infrared sensors, except that two images of the same scene but different spectral bands are simultaneously captured, and displayed independently or as a fused image. An alternative method of exploiting dual band FPA is to utilize the dual band nature of the focal plane to simultaneously view different scenes. It is feasible to provide a picture-in-picture capability where one spectral band views a narrow field of view (FOV) to identify targets while the other spectral band images the wide FOV to provide situational awareness. We explore this capability, including design concepts and issues associated with the development of a dual band picture-in-picture infrared system.

Recent progress for HGCDTE quantum detection in France

Due to its tuneable narrow band gap, HgCdTe (MCT) is a material of choice for high complexity IR focal plane arrays (FPAs). Being a strategic defence technology, MCT detector developments is totally mastered at every stage of fabrication at LETI and Sofradir, from the lattice matched CZT substrate growth, the active layer MCT growth, to PV technology, silicon ROIC design and flip chip hybridization. Within the last few years, MCT devices have considerably evolved in terms of device complexity, performances, and field of action. n/p standard technology has been developed in all spectral ranges, from VLWIR (20μm) down SWIR (1.7μm). MCT photodiode sensibility goes even lower, down to visible and even UV with a constant quantum efficiency. Moreover, MCT material provides us with high and noiseless avalanche gains inside the photodiode itself, which we are now fully able to use for the optimization of FPA performances. Besides, p/n diode structure is a new emerging process which improves detector performances by several orders of magnitude in terms of dark current, by comparison with the n/p historical structure. This technology has been successfully demonstrated from VLWIR (15μm cut off) down to the SWIR range (2μm cut off) where ultra low dark currents are recorded at low temperatures (0.4e/s). In the same time, first dual band FPAs are delivered, which are expected to be the 3rd generation of IR detectors. At last, considerable efforts are made in order to increase the operational temperature, going from 100K to 150K for MWIR FPAs at constant performances, optimizing all technological steps, especially growth issues. Going at even higher operating temperatures (HOTs) is also under active study.

Dual-band quantum well infrared photodetectors with two ohmic contacts

Two-color quantum well infrared photodetectors (QWIPs) with two stacks of QW series have been grown by molecular beam epitaxy and processed into mesa structure devices with only two ohmic contacts by photolithography and wet chemical etching. By changing QWIP parameters, including barrier height, well width, doping level and period number, the total bias voltage can be distributed to the two stacks in such a way that the stacked structure will show different photoresponse characteristics. The photocurrent spectrum measurements demonstrate that sample 1 can work alternately between the two atmospheric windows of 3—5 μm and 8—12 μm by tuning the voltage, while sample 2 can photorespond simultaneously to the irradiation of the two atmospheric windows. In this paper, the physics behind the two-contact type of QWIP is discussed. The voltage tunability and the simultaneous photoresponse are attributed to the change of photoconductive gain with the bias voltage and the distribution of the total bias between the two series. We here focus the discussion on the voltage tunability of sample 1. Compared with the three-contact-per-pixel structure, two-contact-per-pixel structure can greatly facilitate the dual-band focal plane array (FPA) device fabrication and increase the FPA fill factor.

Large area III–V infrared focal planes

Jet Propulsion Laboratory is actively developing the III–V based infrared detector and focal plane arrays (FPAs) for remote sensing and imaging applications. Currently, we are working on Superlattice detectors, multi-band quantum well infrared photodetectors (QWIPs), and quantum dot infrared photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper, we will discuss the demonstration of long-wavelength 1 K × 1 K QDIP FPA, 1 K × 1K QWIP FPA, the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP FPA, and demonstration of the first mid-wave and long-wave 1K × 1K superlattice FPA. In addition, we will discuss the advantages of III–V material system in the context of large format infrared FPAs.

High-Performance MWIR/LWIR Dual-Band 640 × 480 HgCdTe/Si FPAs

HgCdTe grown on large-area Si substrates allows for larger array formats and potentially reduced focal-plane array (FPA) cost compared with smaller, more expensive CdZnTe substrates. The goal of this work is to evaluate the use of HgCdTe/Si for mid-wavelength/long-wavelength infrared (MWIR/LWIR) dual-band FPAs. A series of MWIR/LWIR dual-band HgCdTe triple-layer n-P-n heterojunction (TLHJ) device structures were grown by molecular-beam epitaxy (MBE) on 100-mm (211)Si substrates. The wafers showed low macro-defect density (< 300 cm ―2 ) and was processed into 20-μm-unit-cell 640 x 480 detector arrays which were mated to dual-band readout integrated circuits (ROICs) to produce FPAs. The measured 80-K cutoff wavelengths were 5.5 μm for MWIR and 9.4 μm for LWIR, respectively. The FPAs exhibited high pixel operabilities in each band, with noise equivalent differential temperature (NEDT) operabilities of 99.98% for the MWIR band and 99.6% for the LWIR band demonstrated at 84 K.

HgCdTe Growth on 6 cm × 6 cm CdZnTe Substrates for Large-Format Dual-Band Infrared Focal-Plane Arrays

This paper describes molecular-beam epitaxy growth of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) dual-band device structures on large-area (6 cm × 6 cm) CdZnTe substrates. Wafer-level composition and defect mapping techniques were used to investigate the limiting mechanisms in improving the cutoff wavelength (λc) uniformity and reducing the defect density. Structural quality of epitaxial layers was monitored using etch pit density (EPD) measurements at various depths in the epitaxial layers. Finally, 640 × 480, 20-μm-pixel-pitch dual-band focal-plane arrays (FPAs) were fabricated to demonstrate the overall maturity of growth and fabrication processes of epitaxial layers. The MWIR/LWIR dual-band layers, at optimized growth conditions, show a λc variation of ±0.15 μm across a 6 cm × 6 cm CdZnTe substrate, a uniform low macrodefect density with an average of 1000 cm−2, and an average EPD of 1.5 × 105 cm−2. FPAs fabricated using these layers show band 1 (MWIR) noise equivalent temperature difference (NETD) operability of 99.94% and band 2 (LWIR) NETD operability of 99.2%, which are among the highest reported to date.

Large format voltage tunable dual-band QWIP FPAs

Third generation thermal imagers with dual/multi-band operation capability are the prominent focus of the current research in the field of infrared detection. Dual band quantum-well infrared photodetector (QWIP) focal plane arrays (FPAs) based on various detection and fabrication approaches have been reported. One of these approaches is the three-contact design allowing simultaneous integration of the signals in both bands. However, this approach requires three In bumps on each pixel leading to a complicated fabrication process and lower fill factor. If the spectral response of a two-stack QWIP structure can effectively be shifted between two spectral bands with the applied bias, dual band sensors can be implemented with the conventional FPA fabrication process requiring only one In bump on each pixel making it possible to fabricate large format dual band FPAs at the cost and yield of single band detectors. While some disadvantages of this technique have been discussed in the literature, the detailed assessment of this approach has not been performed at the FPA level yet. We report the characteristics of a large format (640 × 512) voltage tunable dual-band QWIP FPA constructed through series connection of MWIR AlGaAs–InGaAs and LWIR AlGaAs–GaAs multi-quantum well stacks, and provide a detailed assessment of the potential of this approach at both pixel and FPA levels. The dual band FPA having MWIR and LWIR cut-off wavelengths of 5.1 and 8.9 μm provided noise equivalent temperature differences as low as 14 and 31 mK ( f/1.5) with switching voltages within the limits applicable by commercial read-out integrated circuits. The results demonstrate the promise of the approach for achieving large format low cost dual band FPAs.

Hyperspectral opportunities with next-generation QSIP arrays

Hyperspectral applications that employ gratings typically exploit only one grating order, since other orders that emerge from the grating at the same angle of dispersion would corrupt the spectrum measured with conventional FPAs. Previously, dualband infrared focal plane arrays (FPA), developed for multi-spectral imaging applications, have demonstrated advantages over conventional multi-FPA sensor configurations in compactness and band-to-band pixel registration. In addition, dualband and multiband FPA architectures of Quantum Structure Infrared Photodetector (QSIP) technology would enable applications beyond simple multi-spectral imaging. For example, In the case of dual- (or multi-) waveband FPAs, the different grating orders can be paired with the FPA wavebands, allowing high efficiency hyperspectral imaging over very broad wavelength regions. Exploiting the “third dimension” of FPA detecting layers for this type of hyperspectral application has been demonstrated previously. As time progresses, multi-waveband FPAs are expected to provide an increase in spectral information at the pixel level without the need for external (e.g. dispersive) optical elements. As the number of wavebands increases to the point of providing spectral overlap of adjacent spectral resolution elements, hyperspectral capability is then achieved by the FPA acting alone. This technology may someday become possible through advanced QSIP architectures having photons of different wavelength continuously absorbed at different depths, and their resulting photocurrents isolated with a vertical grid of contacts or an equivalent mechanism for transporting depth-dependent signal photocurrent to a read-out circuit unit cell.

Quantum Well and Quantum Dot Based Detector Arrays for Infrared Imaging

ABSTRACTA mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 320x256 pixel quantum well infrared photodetector (QWIP) dualband focal plane arrays (FPAs) have been demonstrated with excellent imagery. Currently, we are developing a 1024x1024 pixel simultaneous pixel co-registered dualband QWIP FPA. In addition, epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format FPAs. The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb both 45° and normal incident light, therefore a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 microns, with peak detectivity reaching ∼ 1 × 1010 Jones at 77 K. The devices were fabricated into the first LWIR 640x512 pixel QDIP FPA, which has produced excellent infrared imagery with NETD of 40 mK at 60K operating temperature.

Status of HgCdTe Bicolor and Dual-Band Infrared Focal Arrays at LETI

In this paper we show the latest achievements of HgCdTe-based infrared bispectral focal plane arrays (FPAs) at LETI infrared laboratory. We present and compare the two different pixel architectures that are studied now in our laboratory, named “NPN” and “pseudo-planar”. With these two technologies, a wide range of system applications in dual-band detection can be covered. Advantages of both architectures will be pointed out. We also review performances obtained with these different architectures. The first one has been studied for several years in our laboratory, and we review results obtained on FPAs of size 256 × 256 pixels on a 25 μm pitch, in the MWIR/MWIR (3 μm/5 μm) range. Very high noise equivalent temperature difference (NETD) operability is obtained, at 99.8% for the λc = 3 μm band and 98.7% for the λc = 5 μm band. The second one has been developed more recently, to address other applications that need temporal coherence as well as spatial coherence. We show detailed performances measured on pseudo-planar type FPAs of size 256 × 256 pixels on a 30 μm pitch, in the MWIR/LWIR (5 μm/9 μm) range. The results are also very promising for these prototypes, with NETD as low as 15 mK for an integration time as short as 1 ms, and good operability. The main manufacturing issues are also presented and discussed for both pixel architectures. Challenging process steps are, firstly, molecular beam epitaxy (MBE) HgCdTe heterostructure growth, on large substrates (cadmium zinc telluride) and heterosubstrates (germanium), and, secondly, detector array fabrication on a nonplanar surface. In particular, trenches or hole etching steps, photolithography and hybridization are crucial to improve uniformity, number of defects and performances. Some results of surface, structural and electrical characterizations are shown to illustrate these issues. On the basis of these results, the short-term and long-term objectives and trends for our research and development are presented, in terms of pixel pitch reduction, wavelengths, and dual-band FPA size.

Monolithically integrated near-infrared and mid-infrared detector array for spectral imaging

A multi-band focal plane array sensitive in near-infrared (near-IR) and mid-wavelength infrared (MWIR) is been developed by monolithically integrating a near-infrared (1–1.5μm) p–i–n photodiode with a mid-infrared (3–5μm) QWIP. This multiband detector involves both intersubband and interband transitions in III–V semiconductor layer structures. Each detector stack absorbs photons within the specified wavelength band, while allowing the transmission of photons in other spectral bands, thus efficiently permitting multiband detection. Monolithically grown material characterization data and individual detector test results ensure the high quality of material suitable for near-infrared/QWIP dual-band focal plane array.

Dual-band focal plane arrays with advanced hyperspectral capabilities

Dual-band focal plane arrays with advanced hyperspectral capabilities

Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

The Leti-Lir has studied II–VI compounds for infrared (IR) detection for more than 20 years. The need to reduce the production cost of IR focal plane arrays (FPAs) sparked the development of heteroepitaxy on large-area substrates. Germanium has been chosen as the heterosubstrate for the third generation of IR detectors. First, we report on the progress achieved in HgCdTe growth on 3-in. and 4-in. (211)B CdTe/Ge. Then, we discuss the choice of a new machine for larger size and better homogeneity. Finally, we present the latest results on third-generation IR multicolor and megapixel devices. First-time results regarding a middle wavelength infrared (MWIR) dual-band FPA, with a reduced pitch of 25 µm, and a MWIR 1,280×1,024 FPA will be shown. Both detectors are based on molecular beam epitaxy (MBE)-grown HgCdTe on Ge. The results shown validate the choice of Ge as the substrate for third-generation detectors.

High-resolution 3–5 [micro sign]m∕8–12 [micro sign]m dual-band quantum well infrared photodetector array

A dual-band focal plane array (FPA) for the 8–12 µm and 3–5 µm atmospheric windows with simultaneous integration in both spectral bands on each pixel is reported. The FPA is based on quantum well infrared photodetectors and comprises 384×288 pixels with 40 µm pitch. At 7.6 ms integration time and an f/2 aperture, the FPA achieves excellent thermal resolution with noise-equivalent temperature differences of 17 mK (3–5 µm) and 43 mK (8–12 µm).

Comparison of HgCdTe and quantum-well infrared photodetector dual-band focal plane arrays

We report on results of laboratory and field tests of dual-band focal plane arrays (FPAs) in the medium-wave infrared (MWIR) and long-wave infrared (LWIR), produced under the Army Research Laboratory's Multidomain Smart Sensor Federated Laboratory program. The FPAs were made by DRS Infrared Technologies using the HgCdTe material system, and by BAE Systems using quantum-well infrared photodetector (QWIP) technology. The HgCdTe array used the DRS HDVIPTM process to bond two single-color detector structures to a 640×480-pixel single-color readout integrated circuit (ROIC) to produce a dual-band 320×240 pixel array. The MWIR and LWIR pixels are co-located and have a large fill factor. The images from each band may be read out either sequentially (alternating frames) or simultaneously. The alternating-frame approach must be used to produce optimal imagery in both bands under normal background conditions. The QWIP FPA was produced using III-V materials grown by molecular-beam epitaxy (MBE). The LWIR section consisted of GaAs quantum wells and AlGaAs barriers, and the MWIR section used InGaAs quantum wells with AlGaAs barriers. The detector arrays were processed with three ohmic contacts for each pixel, allowing for independent bias control over both the MWIR and LWIR sections. The arrays were indium bump-bonded to an ROIC (specifically designed for two-color operation), which puts out the imagery from both bands simultaneously. The ROIC has variable gain and windowing capabilities. Both FPAs were tested under similar ambient conditions with similar optical components. The FPAs were subjected to a standard series of laboratory performance tests. The advantages and disadvantages of the two material systems for producing medium-format dual-band FPAs are discussed.