The present paper reviews phenomena associated with the implantation of hydrogen isotopes into graphite and carbonized layers, with particular emphasis on the implanted layer, i.e. the depth range where the injected atoms are deposited. Different modifications of graphite and carbonaceous layers are characterized with respect to their structure, and the influence of radiation damage is treated. Recent evidence is demonstrated for the occurrence of local hydrogen and methane molecule formation, and the diffusion of these molecules through the bulk.The ‘saturated layer’ formed during hydrogen implantation is modelled by a dynamic balance between ion deposition and trapping, thermal or ion-induced detrapping, and local recombination and molecular diffusion. Corresponding calculations yield satisfactory fits to monoenergetic implantation and thermal effusion experiments.The inventory in the saturated layer is only a small contribution to the total hydrogen inventory of carbon walls in fusion machines. Some recycling phenomena can be explained by the physics of the implanted layer, whereas others, like wall pumping, require different mechanisms for their explanation.
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