ABSTRACT We analyze in detail the published experimental data on the high-temperature oxidation of compact boron carbide in dry oxygen in the range of 600–1200°C. The results of the analysis show that the oxidation of boron carbide occurs with the accumulation of excess (compared to stoichiometry) boron. Using experimental data, the time dependences of the thickness of the boron oxide melt layer formed on the sample surface during its oxidation and the mass of boron oxide evaporated from the sample surface are determined. For different temperatures, the evaporation rates of boron oxide are determined. Based on the analysis, a model of the high-temperature oxidation of compact boron carbide in dry environment was developed. Using the developed model, calculations of the process of boron carbide oxidation at different temperatures were carried out. Based on the results of calculations, the time dependences of the mass of the sample, the mass of the resulting carbon dioxide, and the thickness of the boron oxide melt layer were determined. The calculation results are compared with the experimental data and with the theoretical temperature dependence of the boron oxide melt evaporation rate, calculated using the Hertz – Knudsen equation. Based on the simulation results, it is concluded that the rates of chemical reactions are finite, and the process of B4C oxidation cannot be reduced only to oxygen diffusion through the boron oxide layer.
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