Double-sided Microstrip Detectors Research Articles

The data acquisition system for the PANDA Micro-Vertex Detector

The PANDA (antiProton ANnihilation at DArmstadt) experiment will study the strong interaction in annihilation reactions between an antiproton beam and a stationary cluster jet target. The PANDA detector will be composed of several sub-detectors designed for tracking, particle identification and calorimetry. The Micro-Vertex Detector (MVD) is the innermost part of the tracking system surrounding the interaction region, which is designed for precise vertex and tracking detection. It consists of silicon pixel and double-sided microstrip detectors. For the readout of the microstrip sensors an ASIC called ToASt (Torino Asic for Strip readout) is being developed in 0.11 μm CMOS technology at INFN Turin. The ASIC takes advantage of both Time-over-Threshold and Time-of-Arrival methods to accurately measure the event's energy and timestamp. To sustain the acquisition of the microstrip sensors a MDC (Module Data Concentrator) ASIC is under development at KIT. Up to eight ToASt front-ends' data streams are multiplexed, read out and processed by one MDC. The data of several MDCs are collected and processed by the off-detector readout card MMB (MVD Multiplexer Board), also under development at KIT. The processed data is then transferred via 100 GbE optical links to the computing nodes. The ToASt chips have been integrated with the FPGA implementation of the MDC to form the first fully functional detector module. Beam tests have been performed at the COSY facility in Jülich. This paper focuses on the design of MDC ASIC and MMB board, the integration with the ToASt and presents preliminary beam test results.

Система оцінки якості монолітних активних мікропіксельних детекторів

A system for quality assessment of micropixel detectors is presented. The system includes a laser scanning microprobe and a setup for studying the response of micro detectors to minimum ionizing particles. The results of the validation of the developed system indicate its suitability for assessing the quality of the latest monolithic active pixel sensors (MAPS), promising elements of large-area tracking systems for future high-energy physics experiments. Comparison of MAPS with the double-sided microstrip detectors of the CBM experiment (FAIR, Darmstadt) indicates the feasibility of the upgrade of its Silicon Tracking System using MAPS.

Evaluation of double-sided silicon microstrip sensor for the FOOT experiment

Abstract The goal of the FOOT (FragmentatiOn Of Target) experiment is to measure the fragmentation cross section of protons into H, C, O targets at beam energies of interest for hadrontherapy (50–250 MeV for protons and 50–400 MeV/u for Carbon ions) (Tommasino et al., 2015 [1] ; FOOT CDR Conceptual Design, 0000 [2] ). Given the short range of the fragments, an inverse kinematic approach has been chosen, hence requiring precise tracking capabilities for charged ions. One of the foreseen experiment subsystems will be the MSD (Microstrip Silicon Detector), composed of three x – y measuring planes. In this work we evaluate the suitability of standard double-sided microstrip detectors, coupled to an high dynamic range readout chip, to be used for this task. The results about cluster signal, signal/noise, and dynamic range of readout chip are encouraging, and confirm the suitability of this class of sensors to be used in the FOOT experiment.

Mechanics and detector integration in the P̄ANDA Micro-Vertex-Detector1

The Micro-Vertex-Detector (MVD) is the innermost detector of the P̄ANDA target spectrometer utilizing silicon hybrid pixel detectors and double-sided microstrip detectors in the inner and outer parts, respectively. The experimental setup requires sophisticated solutions for the detector integration in order to maintain a stringent material budget. Basic detector layout, the overall support concept and the integration of main detector parts are summarized in this article. First support components made of lightweight carbon structures have been manufactured. Selected parts of the prototype development will be presented. Finally, a conversion tool allows the migration of detailed CAD models to physics simulations. In this way the impact of engineering solutions on the overall detector performance can be checked.

Application of a thin double-sided microstrip detector for the registration of [formula omitted]-delayed charge particles: The 6He [formula omitted] decay into the two-body continuum of 6Li

We present a method for the detection of charged particles, emitted following β decay, that allows to reduce the background due to β radiation and thus to facilitate separation of the delayed-particle events. The isotopes of interest are implanted into a highly segmented double-sided silicon strip detector, resulting in excellent precision on the overall normalisation. The characteristics of the detector and the particle signatures are discussed. This method can be applied to a variety of systems close to the proton and neutron driplines; a region which the recent availability of post-accelerated radioactive beams has opened up for study. To demonstrate this, we measured the branching ratio of 6He β decay into the α + d two-body continuum of 6Li. We obtained a value of ( 1.7 ± 0.4 ) × 10 - 6 for energies α + d above 525 keV.

The Silicon Tracker of the AMS02 experiment

After the successful test flight in 1998, the AMS experiment has been redesigned to improve its performances for future operation on the ISS. The Silicon Tracker is the central detector of the AMS-02 magnetic spectrometer. Eight planes of double-sided microstrip detectors embedded in a magnetic field of ∼0.8 T allow for an accurate 3D reconstruction of particles trajectories and their rigidity measurement up to several TVs. The tracker is made of ∼6.4 m 2 of silicon with a single point resolution of 10(30) μm in the bending (not bending) coordinate. The description of the tracker system and its performance will be presented.

Observation of substrate-type inversion in high-resistivity silicon structures irradiated with high-energy electrons

Several silicon devices, including test structures and double-sided microstrip detectors, have been irradiated with a 900 MeV electron beam. The irradiated test structures have been used to quantify bulk and surface damage effects caused by the incident particles. Bulk-type conversion from n to p-type has been observed to occur at fluences of order 10/sup 14/ cm/sup -2/. For the damage constant /spl alpha/, a NIEL normalized value of about 3/spl times/10/sup -17/ A/cm has been obtained. The results confirm that high-energy electrons, like neutrons and protons, are very effective in creating bulk damage in silicon.

Radiation damage of silicon structures with electrons of [formula omitted

We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

Double-sided microstrip detectors for the high radiation environment in the HERA-B experiment

The design of the double-sided microstrip detectors for the HERA-B experiment at DESY is discussed, in particular with respect to the strong requirements imposed by the high radiation environment and by the challenging mechanical construction. The detectors are tested with an infrared laser setup and first results from operation in the experiment in 1997 are presented.

The CDF silicon detector upgrade

A major silicon upgrade project is under way for the CDFII experiment that will operate during Run II of the Tevatron in the year 2000. The innermost detector, SVXII, will cover the interaction region with three barrels of five layers of double-sided microstrip detectors. In the radial gap between the SVXII and the new main tracking chamber (COT) will be located the ISL that consists of two planes of double-sided microstrip detectors at large pseudorapidity and one in the central region. A description of the project design and its motivation is presented here.

The ALPHA Magnetic Spectrometer

The ALPHA Magnetic Spectrometer (AMS) will be the first large magnetic spectrometer in space. It is scheduled to be installed on the future International Space Station ALPHA (ISSA) in the year 2002 to perform measurements of the charged particle composition to answer fundamental questions in particle physics and astrophysics. Before installation on ISSA, AMS will fly on the shuttle DISCOVERY for a period of 10 days starting in May 1998. This will enable AMS to perform a test of the apparatus and first measurements. The AMS detector has five major components: A permanent NdFeB magnet, six planes of Silicon double-sided microstrip detectors, a plastic scintillator time of flight hodoscope, a plastic scintillator anticoincidence counter and an Aerogel Cherenkov threshold counter. In addition, there are electronics, support infrastructure and interfaces.

First results from GaAs double-sided detectors

Preliminary results are presented on the performance of double-sided microstrip detectors using Schottky contacts on both sides of a semi-insulating (SI) GaAs substrate wafer, after exposure to 10 14 neutrons cm −2 at the ISIS facility. A qualitative explanation of the device behaviour is given.

Results from double-sided silicon microstrip detector with field plate separation

Silicon microstrip detectors have become important components for microvertex detectors in particle physics experiments especially where tagging of heavy quarks or τ leptons is needed. We report here on the tests of a second iteration double sided microstrip detector design using field-plate separation of the n-side strips. Double-sided detectors with optimal resolution on both sides have potentially important uses in experiments where multiple scattering or space are critical.

Radiation damage by neutrons and protons to silicon detectors

Observations have been made of the behaviour of silicon diodes and microstrip detectors after exposures of up to 2 × 10 14 neutrons cm −2 and 4 Mrad 60Co photons. Results are presented on leakage currents and doping concentration of the substrate material of neutron damaged devices. Important changes in the effective doping of the substrate have been observed to take place during the room temperature annealing of the material, particularly after high neutron fluences. Over times of more than one year further doping changes occur which increase the depletion voltage of type inverted material and may set an ultimate lifetime limit for silicon detectors in future hadron colliders. Measurements have been made of the performance of double sided microstrip detectors constructed using a field plate isolation technique on the n-type surface. After high doses of both neutrons and photons good interstrip isolation is maintained. demonstrating one potential technique for radiation tolerant microstrip fabrication.

Development and tests of double sided microstrip detectors

We have made a test production of AC coupled double sided microstrip detectors and made some tests about DC characteristics and AC characteristics of the developed device. The developed detector shows a good performance.

Design and processing of double-sided microstrip detectors

Design and processing of double-sided microstrip detectors

Radiation hardness tests on the read out electronics chain of the ALEPH minivertex detector

In ALEPH a double sided microstrip detector has been installed as minivertex detector. Its read out electronics consists of a custom designed VLSI amplifier CAMEX 64, a digital steering chip running the CAMEX and a line driver driving the output line. All these components have been subjected to extensive tests of radiation hardness in different radiation environments and bias conditions. Both noise increase, modification of the working parameters and sudden breakdown have been observed. The CAMEX 64 under bias condition stands only up to 20–30 krad and hence is the weakest point of the chain.