Double Resonant Tunneling Research Articles

Double resonant tunneling due to the nonlocal coupling of Majorana bound states to the quantum dot system

Double resonant tunneling due to the nonlocal coupling of Majorana bound states to the quantum dot system

Insights on energy selective contacts for thermal energy harvesting using double resonant tunneling contacts and numerical modeling

Energy selective electrical contacts have been proposed as a way to approach ultimate efficiencies both for thermoelectric and photovoltaic devices as they allow a reduction of the entropy production during the energy conversion process. A self-consistent numerical model based on the transfer matrix approach in the effective mass and envelope function approximation has been developed to calculate the electronic properties of double resonant tunneling barriers used as energy selective contacts in hot carrier solar cells. It is found that the application of an external electric bias significantly degrades the electronic transmission of the structure, and thus the tunneling current in the current-voltage characteristic. This is due to a symmetry breaking which can be offset using finely tuned asymmetric double resonant tunneling barriers, leading to a full recovery of the tunneling current in our model. Moreover, we model the heterostructure using electrons temperature in the emitter higher than that of the lattice, providing insights on the interpretation of experimental devices functioning in hot carrier conditions, especially regarding the previously reported shift of the resonance peak (negative differential resistance), which we interpret as related to a shift in the hot electron distribution while the maximum remains at the conduction band edge of the emitter. Finally, experimental results are presented using asymmetric structure showing significantly improved resonant properties at room temperature with very sharp negative differential resistance.

Self-Consistent Modeling of Double Resonant Tunneling Barriers Selective Contacts for Hot Carrier Solar Cells

Self-Consistent Modeling of Double Resonant Tunneling Barriers Selective Contacts for Hot Carrier Solar Cells

Dynamics of electron tunneling in semiconductor nanostructures

We have modeled the transmission of an electron wave packet through a resonant tunneling semiconductor nanostructure by solving the time-dependent Schr\"odinger equation using the finite-difference method. We have found in all cases that the passage of the electron wave packet through the tunneling barrier is accompanied by a propagation delay relative to the propagation of an undisturbed wave packet. Tunneling transport is shown to be causal, and no evidence of superluminal behavior is seen, either for resonant or for off-resonant tunneling. In the case of off-resonant tunneling, the peak of the transmitted wave packet is observed to exit a double resonant tunneling barrier before the peak of the incident wave packet enters the structure. However, these two peaks are not directly related, and the appearance of a well-formed peak in the transmitted intensity is shown to be a result of the transient behavior of the tunneling event.