Double Quantum Dot Device Research Articles

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors Qi>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio frequency crosstalk that results in a ring-up of the resonator when neighboring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk.

Noise suppression of transport through double quantum dots by feedback control

A controllable low noise current lies at the heart of high-precision measurements in quantum transport and metrology. While the previous research dealt with the suppression of noise in transport through a tunneling junction or a single quantum dot (QD) device, the present work investigates noise inhibition of a double quantum dot (DQD) transport system based on closed-loop feedback control. The unique advantage of a DQD device is that bidirectional transport at low bias can be measured by a nearby quantum point contact. However, the continuous monitoring of the DQD states inevitably leads to a measurement-induced dephasing. To appropriately characterize its transport properties in the presence of feedback action, we here develop a numerical method dubbed auxiliary density matrix approach, motivated by the hierarchical expansion of the moment-generating function in the hierarchy equations of motion [J. Cerrillo et al., Phys. Rev. B 94, 214308 (2016)]. This generic method has no restriction on the system structure and parameters and is able to evaluate the feedback current cumulants to an arbitrary order. It is revealed that the feedback control of the tunnel coupling between the two dots is the most effective to suppress the noise under various tunnel coupling configurations. The influence of interdot Coulomb interaction, measurement-induced dephasing, and finite time delay on feedback is also analyzed in detail.

Coherence Characteristics of a GaAs Single Heavy-Hole Spin Qubit Using a Modified Single-Shot Latching Readout Technique.

We present an experimental study of the coherence properties of a single heavy-hole spin qubit formed in one quantum dot of a gated GaAs/AlGaAs double quantum dot device. We use a modified spin-readout latching technique in which the second quantum dot serves both as an auxiliary element for a fast spin-dependent readout within a 200 ns time window and as a register for storing the spin-state information. To manipulate the single-spin qubit, we apply sequences of microwave bursts of various amplitudes and durations to make Rabi, Ramsey, Hahn-echo, and CPMG measurements. As a result of the qubit manipulation protocols combined with the latching spin readout, we determine and discuss the achieved qubit coherence times: T1, TRabi, T2*, and T2CPMG vs. microwave excitation amplitude, detuning, and additional relevant parameters.

Quantum-correlated photons generated by nonlocal electron transport

Since the realization of high-quality microwave cavities coupled to quantum dots, one can envisage the possibility to investigate the coherent interaction of light and matter in semiconductor quantum devices. Here we study a parallel double quantum dot device operating as single-electron splitter interferometer, with each dot coupled to a local photon cavity. We explore how quantum correlation and entanglement between the two separated cavities are generated by the coherent transport of a single electron passing simultaneously through the two different dots. We calculate the covariance of the cavity occupations by use of a diagrammatic perturbative expansion based on Keldysh Green's functions to the fourth order in the dot-cavity interaction strength, taking into account vertex diagrams. In this way, we demonstrate the creation of entanglement by showing that the classical Cauchy-Schwarz inequality is violated if the energy levels of the two dots are almost degenerate. For large level detunings or a single dot coupled to two cavities, we show that the inequality is not violated.

Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device

Difference in $g$ factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective $g$ factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of $\ensuremath{\sim}5%--10%$. We examine the continuous change in the hole $g$ factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective $g$ factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.

Coexistence of parallel and series current paths in parallel-coupled double quantum dots in nonlinear transport regime

We investigated the electron transport properties of parallel-coupled double quantum dot (DQD) devices under magnetic fields. When a low magnetic field was applied, electron tunneling through parallel-coupled DQDs was observed. Under a high magnetic field, we observed both electron tunneling through parallel- and series-coupled DQDs under nonlinear transport conditions. In addition, the Pauli spin blockade was observed, indicating tunneling through the series-coupled DQDs. We attribute these behaviors to the magnetic-field-induced changes in the tunnel-couplings that allow the coexistence of the current paths of the parallel and series configurations.

Deep reinforcement learning for efficient measurement of quantum devices

Deep reinforcement learning is an emerging machine-learning approach that can teach a computer to learn from their actions and rewards similar to the way humans learn from experience. It offers many advantages in automating decision processes to navigate large parameter spaces. This paper proposes an approach to the efficient measurement of quantum devices based on deep reinforcement learning. We focus on double quantum dot devices, demonstrating the fully automatic identification of specific transport features called bias triangles. Measurements targeting these features are difficult to automate, since bias triangles are found in otherwise featureless regions of the parameter space. Our algorithm identifies bias triangles in a mean time of <30 min, and sometimes as little as 1 min. This approach, based on dueling deep Q-networks, can be adapted to a broad range of devices and target transport features. This is a crucial demonstration of the utility of deep reinforcement learning for decision making in the measurement and operation of quantum devices.

Single-hole couplings in GaAs/AlGaAs double dots probed with transport and EDSR spectroscopy

We report a detailed study of the tunnel barriers within a single-hole GaAs/AlGaAs double quantum dot device (DQD). For quantum information applications as well as fundamental studies, careful tuning and reliable measurements of the barriers are important requirements. In order to tune a DQD device adequately into the single-hole electric dipole spin resonance regime, one has to employ a variety of techniques to cover the extended range of tunnel couplings. In this work, we demonstrate four separate techniques, based upon charge sensing, quantum transport, time-resolved pulsing, and electron dipole spin resonance spectroscopy to determine the couplings as a function of relevant gate voltages and magnetic field. Measurements were performed under conditions of both symmetric and asymmetric tunnel couplings to the leads. Good agreement was observed between different techniques when measured under the same conditions. The results indicate that even in this relatively simple circuit, the requirement to tune multiple gates and the consequences of real potential profiles result in non-intuitive dependencies of the couplings as a function of the plunger gate voltage and the magnetic field.

Tunable interdot coupling in few-electron bilayer graphene double quantum dots

We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 and 4 GHz and the mutual capacitive coupling between 0.2 and 0.6 meV, independent of the charge occupation of the quantum dots. The charging energy and, hence, the dot size remain nearly unchanged. The tuning range of the tunnel coupling covers the operating regime of typical silicon and GaAs spin qubit devices.

Heat Driven Transport in Serial Double Quantum Dot Devices.

Studies of thermally induced transport in nanostructures provide access to an exciting regime where fluctuations are relevant, enabling the investigation of fundamental thermodynamic concepts and the realization of thermal energy harvesters. We study a serial double quantum dot formed in an InAs/InP nanowire coupled to two electron reservoirs. By means of a specially designed local metallic joule-heater, the temperature of the phonon bath in the vicinity of the double quantum dot can be enhanced. This results in phonon-assisted transport, enabling the conversion of local heat into electrical power in a nanosized heat engine. Simultaneously, the electron temperatures of the reservoirs are affected, resulting in conventional thermoelectric transport. By detailed modeling and experimentally tuning the interdot coupling, we disentangle both effects. Furthermore, we show that phonon-assisted transport is sensitive to excited states. Our findings demonstrate the versatility of our design to study fluctuations and fundamental nanothermodynamics.

Quantum device fine-tuning using unsupervised embedding learning

Quantum devices with a large number of gate electrodes allow for precise control of device parameters. This capability is hard to fully exploit due to the complex dependence of these parameters on applied gate voltages. We experimentally demonstrate an algorithm capable of fine-tuning several device parameters at once. The algorithm acquires a measurement and assigns it a score using a variational auto-encoder. Gate voltage settings are set to optimize this score in real-time in an unsupervised fashion. We report fine-tuning times of a double quantum dot device within approximately 40 min.

Automated Tuning of Double Quantum Dots into Specific Charge States Using Neural Networks

While quantum dots are at the forefront of quantum device technology, tuning multi-dot systems requires a lengthy experimental process as multiple parameters need to be accurately controlled. This process becomes increasingly time-consuming and difficult to perform manually as the devices become more complex and the number of tuning parameters grows. In this work, we present a crucial step towards automated tuning of quantum dot qubits. We introduce an algorithm driven by machine learning that uses a small number of coarse-grained measurements as its input and tunes the quantum dot system into a pre-selected charge state. We train and test our algorithm on a GaAs double quantum dot device and we consistently arrive at the desired state or its immediate neighborhood.

Current-induced effective Dzyaloshinskii-Moriya interaction and its Kondo enhancement in double quantum dot.

We studied the nonequilibrium transport of serially coupled double quantum dots connected to ferromagnetic electrodes. We demonstrated that the nonadiabatic part of the spin gauge field resulted in a current-induced Dzyaloshinskii-Moriya (DM) interaction effect in a double quantum dot and numerically confirmed this observation through the hierarchical equations of motion approach. We report that the spin current and the effective DM interaction are enhanced in the Kondo regime. We demonstrate that this enhancement occurs because the Kondo resonance, which is supposed to be suppressed by the local ferromagnetic exchange, is enhanced by the inter-dot coupling. This additional Kondo resonance channel increases the spin current. In addition, the impact of the spin-spin interaction and the Kondo effect on tunnel magnetoresistance is discussed. Our results offer a new approach for controlling the non-collinear spin interaction in double quantum dot devices.

Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices

One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing accidental levels near the device's active region that allow spin blockade lifting. We also present evidence that these effects can be mitigated by device design modifications, such as overlapping gates.

Single hole spin relaxation probed by fast single-shot latched charge sensing

Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spin-orbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T1 ∝ B−5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T1 from ~400 ns at B = 1.5 T up to ~60 μs at B = 0.5 T.

A germanium hole spin qubit

Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices.

Anisotropic Pauli Spin-Blockade Effect and Spin-Orbit Interaction Field in an InAs Nanowire Double Quantum Dot.

We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double quantum dot device. In the spin blockade regime, leakage current through the double quantum dot is measured and is used to extract the effects of spin-orbit interaction and hyperfine interaction on spin state mixing. At finite magnetic fields, the leakage current arising from the hyperfine interaction can be suppressed, and the spin-orbit interaction dominates spin state mixing. We observe dependence of the leakage current on the applied magnetic field direction and determine the direction of the spin-orbit interaction field. We show that the spin-orbit field lies in a direction perpendicular to the nanowire axis but with a pronounced off-substrate-plane angle. The results are expected to have an important implication in employing InAs nanowires to construct spin-orbit qubits and topological quantum devices.

Direct observation of the orbital spin Kondo effect in gallium arsenide quantum dots

Besides the spin Kondo effect, other degrees of freedom can give rise to the pseudospin Kondo effect. We report a direct observation of the orbital spin Kondo effect in a series-coupled gallium arsenide (GaAs) double quantum dot device where orbital degrees act as pseudospin. Electron occupation in both dots induces a pseudospin Kondo effect. In a region of one net spin impurity, complete spectra with three resonance peaks are observed. Furthermore, we observe a pseudo-Zeeman effect and demonstrate its electrical controllability for the artificial pseudospin in this orbital spin Kondo process via gate voltage control. The fourfold degeneracy point is realized at a specific value supplemented by spin degeneracy, indicating a transition from the SU(2) to the SU(4) Kondo effect.

SU(4) Kondo entanglement in double quantum dot devices

We analyze, from a quantum information theory perspective, the possibility of realizing a SU(4) entangled Kondo regime in semiconductor double quantum dot devices. We focus our analysis on the ground state properties and consider the general experimental situation where the coupling parameters of the two quantum dots differ. We model each quantum dot with an Anderson type Hamiltonian including an interdot Coulomb repulsion and tunnel couplings for each quantum dot to independent fermionic baths. We find that the spin and pseudospin entanglements can be made equal, and the SU(4) symmetry recovered, if the gate voltages are chosen in such a way that the average charge occupancies of the two quantum dots are equal, and the double occupancy on the double quantum dot is suppressed. We present density matrix renormalization group numerical results for the spin and pseudospin entanglement entropies, and analytical results for a simplified model that captures the main physics of the problem.

Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device

Qubits based on silicon quantum dots are emerging as leading candidates for the solid-state implementation of quantum information processing. In silicon, valley states represent a degree of freedom in addition to spin and charge. Characterizing and controlling valley states is critical for the encoding and read-out of electrons-in-silicon-based qubits. Here, we report the coherent manipulation of a qubit, which is based on the two valley states of an electron confined in a silicon quantum dot. We carry out valley qubit operations at multiple charge configurations of the double quantum dot device. The dependence of coherent oscillations on pulse excitation level and duration allows us to map out the energy dispersion as a function of detuning as well as the phase coherence time of the valley qubit. The coherent manipulation also provides a method of measuring valley splittings that are too small to probe with conventional methods.