Pulse electrodeposition was used to produce aluminum doped zinc oxide (AZO) films, which were then used to construct an all-electrodeposited cadmium-free (Cd-free) Copper Indium Diselenide (CISe) solar cell. Aluminum was added into the films during the deposition process by positioning an Aluminum (Al) metal foil into the electrolyte. Energy Dispersive Spectrometry (EDS) elemental mapping confirmed the incorporation of Al into the films. According to X-Ray Diffraction (XRD) patterns, the aluminum doped zinc oxide films have a wurtzite hexagonal crystal structure, only with (002) planes indicating phase purity. The impedance analysis of the annealed device with electrodeposited aluminum doped zinc oxide revealed that it had better charge transfer resistance than the as-deposited device.