Ta doped titanium dioxide (TiO2:Ta) films were deposited by a metalorganic chemical vapor deposition (MOCVD) system. X-ray diffraction (XRD) measurement revealed the TiO2:Ta films with low Ta contents (≤4.0 at.%) to be epitaxial films of anatase phase. X-ray photoelectron spectroscopy (XPS) measurement showed that Ta element only existed as Ta5+ in TiO2 lattice without other valence states. The electrical characteristics of the films could be modified through Ta doping. The minimum resistivity was obtained at Ta content of 2.0%. As Ta content increased, the carrier concentration increased from 4.9 × 1017 to 1.3 × 1019cm−3 while the Hall mobility decreased from 20.4 to 3.07 cm2V−1s−1. The deposited TiO2:Ta films all presented high visible transparency over 93.0%. A thin-film transistor based on 1.0% Ta-doped TiO2 film was fabricated, which exhibited high performances with a ION/IOFF ratio of 7.5 × 107, a subthreshold swing of 0.55 V/decade, and a saturation mobility of 3.4 cm2V−1s−1.
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