Donor Acceptor Copolymers Research Articles

Harnessing Compositional Gradients to Elucidate Phase Behaviors toward High Performance Polymer Semiconductor Blends.

Polymer semiconductor/insulator blends offer a promising avenue to achieve desired mechanical properties, environmental stability, and high device performance in organic field-effect transistors. A comprehensive understanding of process-structure-property relationships necessitates a thorough exploration of the composition space to identify transitions in performance, morphology, and phase behavior. Hence, this study employs a high-throughput gradient thin film library, enabling rapid and continuous screening of composition-morphology-device performance relationships in conjugated polymer blends. Applied to a donor-acceptor copolymer blend, this technique efficiently surveys a broad composition range, capturing trends in device performance across the gradient. Furthermore, characterizing the gradient library using microscopy and depth profiling techniques pinpointed composition-dependent transitions in morphology. To validate the results and gain deeper insights, uniform-composition experiments were conducted on select compositions within and outside the gradient range. Depth profiling experiments on the constant composition films unveil the presence of the semiconducting polymer at the air interface, with apparent enrichment of the semiconductor at the substrate interface at low ratios of the semiconducting component, transitioning to a more even distribution within the bulk of the film at higher ratios. The generalizability of the gradient approach was further confirmed by its application to a homopolymer under different solution processing conditions.

Correction to “Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors”

Correction to “Triethylene Glycol Substituted Diketopyrrolopyrrole‐ and Isoindigo‐Dye Based Donor–Acceptor Copolymers for Organic Light‐Emitting Electrochemical Cells and Transistors”

Donor-Acceptor Copolymer with a Linear Backbone Induced Ordered and Robust Doping Morphology for Efficient and Stable Organic Electrochemical Devices.

Donor (D)-acceptor (A) copolymer-based organic mixed ionic-electronic conductors (OMIECs) exhibit intrinsic environmental stability for they have tailored energy levels. However, their figure-of-merit (μC*) is still falling behind the D-D polymers because of morphology deterioration during the electrochemical doping process. Herein, we developed two D-A copolymers with precisely regulated backbone curvature, namely PTBT-P and PTTBT-P. Compared to the curved PTBT-P and previously reported copolymers, PTTBT-P better keeps its backbone linear, leading to a long-range ordered doping morphology, which is revealed by the in operando X-ray technique. This optimized doping morphology enables a significantly improved operando charge mobility (μ) of 2.44 cm2 V-1 s-1 and a μC* value of 342 F cm-1 V-1 s-1, one of the highest values in D-A copolymer based on OECTs. Besides, we fabricated PTTBT-P-based electrochemical random-access memories and achieved ideal and robust conductance modulation. This study highlights the critical role of backbone curvature control in the optimization of doping morphology for efficient and robust organic electrochemical devices.

N-Type semiconducting polymers based on an bithiophene imide-bridged isoindigo for organic field-effect transistors

n-Type polymer semiconductors are essential for enabling high-performance organic electronic devices; however, their development still remains a challenge. Herein, we reported a new electron-deficient building block, i.e. bithiophene imide (BTI)-bridged isoindigo (IID), BTIID, through a Knoevenagel condensation reaction between the bisaldehyde BTI and the alkylated indolinones. Three donor-acceptor (D-A) copolymers were then successfully synthesized via standard Stille coupling reaction based on this novel building block, which exhibit highly planar backbones and low-lying lowest unoccupied molecular orbitals (LUMO) energy levels. When integrated into organic field-effect transistors (OFETs), these polymers demonstrated unipolar n-type transport characteristics with a highest electron mobility of 5.79 × 10−4 cm2 V−1 s−1. Our research results indicate that the design of strong electron-withdrawing units via integrating two different electron-acceptor units into one single structure represents a promising strategy for developing n-type polymer semiconductors with low-lying LUMO energy levels.

A 3,3'-Difluoro-2,2'-Bithiophene Based Donor Polymer Realizing High Efficiency (>17%) Single Junction Binary Organic Solar Cells.

In this study, two novel donor-acceptor (D-A) copolymers are designed and synthesized, DTBT-2T and DTBT-2T2F with 2,2'-bithiophene or 3,3'-difluoro-2,2'-bithiophene as the donor unit and dithienobenzothiadiazole as the acceptor unit, and used them as donor materials in non-fullerene organic solar cells (OSCs). Due to enhanced planarity of polymer chains resulted by the intramolecular F···S noncovalent interactions, the incorporation of 3,3'-difluoro-2,2'-bithiophene unit instead of 2,2'-bithiophene into the polymers can enhance their molecular packing, crystallinity and hole mobility. The DTBT-2T:L8-BO based binary OSCs deliver a power conversion efficiency (PCE) of only 9.71% with a Voc of 0.78V, a Jsc of 20.69mAcm-2 , and an FF of 59.67%. Moreover, the introduction of fluoro atoms can lower the highest occupied molecular orbital levels. As a result, DTBT-2T2F:L8-BO based single-junction binary OSCs exhibited less recombination loss, more balanced charge mobility, and more favorable morphology, resulting in an impressive PCE of 17.03% with a higher Voc of 0.89V, a Jsc of 25.40mAcm-2, and an FF of 75.74%. These results indicate that 3,3'-difluoro-2,2'-bithiophene unit can be used as an effective building block to synthesize high performance polymer donor materials. This work greatly expands the selection range of donor units for constructing high-performance polymers.

Synthesis of 1,4‐dihydropyrrolo[3,2‐b]pyrrole‐containing donor–acceptor copolymers and their optoelectronic properties

AbstractDonor–acceptor (D–A)‐conjugated polymers have achieved promising performance metrics in numerous optoelectronic applications that continue to motivate studying structure–property relationships and discovering new materials. Here, the materials toolbox is expanded by synthesizing D–A copolymers where 1,4‐dihydropyrrolo[3,2‐b]pyrrole (DHPP) is directly incorporated into the main chain of D–A copolymers for the first time via direct heteroarylation polymerization. Notably, the synthetic complexity of DHPP‐containing polymers coupled with thieno[3,2‐b]pyrrole‐4,6‐dione (TPD) or 3,6‐bis(2‐thienyl)‐2,5‐dihydropyrrolo[3,4‐c]pyrrole‐1,4‐dione (Th2DPP) comonomers is calculated to be lower compared to many common conjugated polymers synthesized via direct arylation. The electron‐rich nature of DHPPs when coupled with TPD or DPP enables optoelectronic properties to be manipulated, evident by measuring distinctly different absorbance and redox properties. Additionally, these D–A copolymers demonstrate their potential in organic electronic applications, such as electrochromics and organic photovoltaics. The reported DHPP‐alt‐Th2DPP copolymer is the first DHPP‐based colored‐to‐transmissive electrochrome and achieves power conversion efficiencies of ~2.5% when incorporated into bulk heterojunction solar cells. Overall, the synthetic accessibility of DHPP monomers and their propensity to participate in robust polymerizations highlights the value of establishing structure–property relationships of an underutilized scaffold. These fundamental attributes serve to inform and advance efforts in the development of DHPP‐containing copolymers for various applications.

Poling induced changes in polarization domain structure of polymer ferroelectrics for application in organic thin film transistors

While electrical poling of organic ferroelectrics has been shown to improve device properties, there are challenges in visualizing accompanying structural changes. We observe poling induced changes in ferroelectric domains by applying differential phase contrast (DPC) imaging in the scanning transmission electron microscope, a method that has been used to observe spatial distributions of electromagnetic fields at the atomic scale. In this work, we obtain DPC images from unpoled and electrically poled polyvinylidene fluoride trifluorethylene films and compare their performance in polymer thin film transistors. The vertically poled films show uniform domains throughout the bulk compared to the unpoled film with a significantly higher magnitude of the overall polarization. Thin film transistors comprising a donor–acceptor copolymer as the active semiconductor layer show improved performance with the vertically poled ferroelectric dielectric film compared with the unpoled ferroelectric dielectric film. A poling field of 80–100 MV/m for the dielectric layer yields the best performing transistors; higher than 100 MV/m is seen to degrade the transistor performance. The results are consistent with a reduction in deleterious charge carrier scattering from ferroelectric domain boundaries or interfacial dipoles arising from electrical poling.

Hexylation Stabilises Twisted Backbone Configurations in the Prototypical Low-Bandgap Copolymer PCDTBT.

Conjugated donor-acceptor copolymers hold great potential as materials for high-performance organic photovoltaics, organic transistors and organic thermoelectric devices. Their low optical bandgap is achieved by alternation of donor and acceptor moieties along the polymer chain, leading to a pronounced charge-transfer character of electronic excitations. However, the influence of appended side chains and of chemical defects of the backbone on their photophysical and conformational properties remains largely unexplored on the level of individual chains. Here, we employ room temperature single-molecule photoluminescence spectroscopy on four compounds based on the prototypical copolymer PCDTBT with systematically changed chemical structure. Our results show that an increasing density of statistically added hexyl chains to the TBT comonomer distorts the molecular conformation, likely through the increase of average dihedral angles along the backbone. We find that, although the conformation becomes more twisted with high hexyl density, the side chains appear to stabilize the backbone in this twisted conformation. In addition, we demonstrate that homocoupling defects along the backbone barely influence the PL spectra of single chains, and thus intra-chain electronic properties.

Theoretical Perspective of Enhancing Order in n-Doped Thermoelectric Polymers through Side Chain Engineering: The Interplay of Counterion-Backbone Interaction and Side Chain Steric Hindrance.

Donor-acceptor (D-A) copolymers doped with n-type dopants are widely sought after for their potential in organic thermoelectric devices. However, the existing structural disorder significantly hampers their charge transport and thermoelectric performance. In this Letter, we propose a mechanism to mitigate this disorder through side chain engineering. Utilizing molecular dynamics simulations, we demonstrate that strong Coulomb interactions between counterions and charged polymer backbones induce a transition in the stacking arrangement of the polymer backbones from a slipped to a vertical configuration. However, the presence of side chain steric hindrance impedes the formation of closely packed and ordered vertical stacking arrangements, resulting in greater distances between adjacent backbones and a higher level of structural disorder in the doped films. Therefore, we propose minimizing side chain steric hindrance to enhance the structural order in doped films. Our findings provide essential insights for advancing high-performance thermoelectric polymers.

Regulating the thermoelectric power factor of donor–acceptor copolymers by heavy chalcogen substitution: a first-principles study

Te substitution of sulfur (S) in PzDPP-based donor–acceptor copolymers enhances n-type power factor, while Se boosts both n-type and p-type power factors. Heavy chalcogen doping strategy shows promise for improving thermoelectric properties.

Enhancing charge transport in isoindigo-based donor–acceptor copolymers by combining ionic doping with polar alkoxy side chains

Side chains of polymers play a crucial role in manipulating polymer interchain interactions, especially polar side chains that promote strong molecular stacking and facilitate ionic diffusion.

Donor-acceptor polymeric inks with transition-metal dichalcogenide nanosheet suspensions for inkjet-printed thin-film transistors

This study investigates molybdenum disulfide (MoS2) suspension to enhance the charge transport properties of the donor-acceptor co-polymer (DA copolymers) semiconductor diketopyrrolopyrrole thieno[3,2-b]thiophene (DPPT-TT) for inkjet-printed thin-film transistor (TFT) fabrication. A mixture of MoS2 nanosheets mixed in the DA copolymer was developed and inkjet printed for the fabrication of TFT devices. The I–V measurements of the fabricated TFTs indicated that the addition of MoS2 suspension (0.5 wt%) into the polymer matrix resulted in the improvement of carrier mobility in both hole and electron transport, with an increase of 52 % and 130 %, respectively, compared to devices without the nanosheets. The improved electrical behavior was not entirely due to transport through the single crystal nanosheets. The introduced MoS2 nanosheets also induced strongly aggregated polymeric domains in the thin film compared to pristine films without the suspension, resulting in a high degree of molecular ordering within the polymeric film. The origin of the improved microstructure of DPPT-TT-based thin films was analyzed using AFM, UV–vis–NIR, and XRD systems. The structural results were shown to correlate with the electrical behavior, further demonstrating the efficacy of the MoS2 nanosheets on the enhancement of the TFT performance.

Effect of diazine isomers on photovoltaic properties of simple and efficient wide band gap polymer donor materials

In this paper, we designed and synthesized six new wide band gap donor-acceptor (D-A) copolymers, PZ2-PZ7, with diazine isomers (pyrazine, pyridazine, pyrimidine) as the A unit and alkylthiophene- or alkylthiothienyl-substituted BDT as the D unit. The effect of diazine isomeric A units and side-chain substituents on molecular structure, optoelectronic properties and photovoltaic performances of the resulting D-A copolymers were investigated in details. Six low-cost polymers were easily obtained by minimal reaction steps and cheap raw materials. All the polymers exhibited wide band gaps (WBGs) (>1.9 eV) and deep-lying HOMO energy levels (<−5.48 eV), which is convenient for paring with low band gap nonfullerene acceptors (NFAs). Theoretical simulation calculation indicates that diazine isomeric A unit has great impact on the planarity of polymer backbone. Bulk heterojunction polymer solar cells (PSCs) were fabricated with these polymers as donor materials and representative NFAs (Y6 and ITIC) as acceptor materials. After optimization, pyrazine-based polymers PZ2 and PZ3 exhibited higher PCEs than those of pyridazine- and pyrimidine-based ones (PZ4-PZ7) regardless of the acceptors. Finally, the PZ2:Y6-based PSC achieved the highest power conversion efficiency (PCE) up to 11.21 %, which could be attributed to more balanced carrier mobility, increased charge dissociation probability, reduced charge recombination, and superior active layer morphology. This work suggests that diazine-based WBG polymers, especially for pyrazine, would become as very promising donor candidates for constructing low-cost and efficient NFA-based PSCs.

Donor-Acceptor Copolymers with 9-(2-Ethylhexyl)carbazole or Dibenzothiophene-5,5-dioxide Donor Units and 5,6-Difluorobenzo[c][1,2,5]thiadiazole Acceptor Units for Photonics.

Semiconducting polymers, particularly of the third generation, including donor-acceptor (D-A) copolymers, are extensively studied due to their huge potential for photonic and electronic applications. Here, we report on two new D-A copolymers, CP1 and CP2, composed of different electron-donor (D) units: 9-(2-ethylhexyl)carbazole or dibenzothiophene-5,5-dioxide, respectively, and of 4,7-bis(4'-(2-octyldodecyl)thiophen-2'-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazole building block with central 5,6-difluorobenzo[c][1,2,5]thiadiazole electron-acceptor (A) units, which were synthesized by Suzuki coupling in the high-boiling solvent xylene and characterized. The copolymers exhibited very good thermal and oxidation stability. A copolymer CP1 with different molecular weights was prepared in order to facilitate a comparison of CP1 with CP2 of comparable molecular weight and to reveal the relationship between molecular weight and properties. The photophysical, electrochemical, and electroluminescence properties were examined. Intense red photoluminescence (PL) with higher PL efficiencies for CP1 than for CP2 was observed in both solutions and films. Red shifts in the PL thin film spectra compared with the PL solution spectra indicated aggregate formation in the solid state. X-ray diffraction measurements revealed differences in the arrangement of molecules in thin films depending on the molecular weight of the copolymers. Light-emitting devices with efficient red emission and low onset voltages were prepared and characterized.

Origin of Intrinsic Operational Instability in Organic Field‐Effect Transistors with Aligned High‐Mobility Donor–Acceptor Copolymer Active Layers

AbstractThe origin of intrinsic operational instability in organic field‐effect transistors (OFETs) is discussed by comparing bias stress effects of OFETs with unidirectionally aligned and unaligned active layers of two different semiconducting polymers under vacuum environment. By forming hydrophobic nano‐groove structures on gate dielectric surfaces, a high‐mobility donor–acceptor copolymer, poly[4‐(4,4‐dihexadecyl‐4H‐cyclopenta[1,2‐b:5,4‐b′]‐dithiophen‐2‐yl)‐alt‐[1,2,5]thiadiazolo[3,4‐c]pyridine] (PCDTPT) and a benchmark semicrystalline polymer, poly(2,5‐bis(3‐hexadecylthiophen‐2‐yl)thieno[3,2‐b]thiophene) (PBTTT‐C16), are successfully aligned. The mobilities of the PCDTPT‐OFETs are higher than those of the PBTTT‐OFETs, but the operational stabilities are lower. Moreover, for both semiconducting polymers, the aligned OFETs exhibit higher mobility but lower operational stability than the unaligned OFETs. These results indicate that an increase in mobility does not necessarily lead to an increase in operational stability. The interface trap density of states analysis reveals that the lower operational stability of PCDTPT‐OFETs is not due to the tail state change but primarily due to the much larger turn‐on voltage shift (ΔVon). The major mechanism causing ΔVon should be the charge carrier transfer from the channel to the gate dielectric. Since the energy barrier limiting the charge carrier transfer decreases with increasing ionization potential of the active layer, the lower operational stability of PCDTPT‐OFETs is attributed to the higher ionization potential of PCDTPT.

Surface-induced film structure for enhanced carrier transport of the conjugated/insulating polymer blends at a low semiconductor content

In this work, a donor-acceptor copolymer poly[(5,6-difluoro-2,1,3-benzothiadiazol-4,7-diyl)- alt(3,3‴-di(2-decyltetradecyl)-2,2'; 5′,2''; 5″,2‴-quaterthiophene-5,5‴-diyl)] (PffBT4T-2DT) has been blended with the insulating polystyrene (PS) to fabricate the field-effect transistors (FETs). The blend films deposited on the SiO2 dielectric by the octadecyltrichlorosilane (OTS) modification, exhibit the FET mobility 1–2 orders of magnitude higher than those on the unmodified dielectric, as well as a 10–100 folds enhancement of mobility with decreasing the PffBT4T-2DT ratios at the concentration range of 30 wt. %-5 wt. %. Detailed microstructural characterizations reveal that the OTS modification induces the change of phase-separation structure in the blend film, in which more aggregates of the PffBT4T-2DT are enriched near the semiconductor/dielectric interface. Furthermore, the OTS modification of substrate and the addition of PS facilitate the conversion from face-on to edge-on stacking orientation so that the edge-on packing structure dominates in the films with a semiconductor content of 5–10 wt. %. Based on these results, we propose that the remarkably elevated mobility at low PffBT4T-2DT contents is attributed to the enhanced edge-on arrangement of PffBT4T-2DT as well as the favorable interconnect network of chain aggregates formed at the semiconductor/dielectric interface for efficient carrier transport pathway.

Improved Exciton Bandwidth and Edge-On Oriented Ordering of Donor–Acceptor Copolymer Thin Films

Improved Exciton Bandwidth and Edge-On Oriented Ordering of Donor–Acceptor Copolymer Thin Films

Recent Advance in the Development of Singlet-Fission-Capable Polymeric Materials.

Singlet fission (SF) is a spin-allowed process in which a higher-energy singlet exciton is converted into two lower-energy triplet excitons via a triplet pair intermediate state. Implementing SF in photovoltaic devices holds the potential to exceed the Shockley-Queisser limit of conventional single-junction solar cells. Although great progress has been made in exploiting the underlying mechanism of SF over the past decades, the scope of materials capable of SF, particularly polymeric materials, remains poor. SF-capable polymer is one of the most potential candidates in the implementation of SF into devices due to their distinct superiorities in flexibility, solution processability and self-assembly behavior. Notably, recent advancements have demonstrated high-performance SF in isolated donor-acceptor (D-A) copolymer chains. This review provides an overview of recent progress in the development of SF-capable polymeric materials, with a significant focus on elucidating the mechanisms of SF in polymers and optimizing the design strategies for SF-capable polymers. Additionally, the paper discusses the challenges encountered in this field and presents future perspectives. It is expected that this comprehensive review will offer valuable insights into the design of novel SF-capable polymeric materials, further advancing the potential for SF implementation in photovoltaic devices.

Unfolding the Correlation between Solution Aggregation and Solid-State Crystal Orientation in Donor-Acceptor Copolymers via Solvent Additive Processing.

Tailoring the crystal orientation of donor-acceptor (D-A) copolymers is vital for boosting the performance of optoelectronic devices. Despite recent advances in controlling the crystal orientation of D-A copolymers in films, the investigation into their aggregates in solution and the correlation between the solution aggregates and solid-state crystal orientation has been limited. Herein, an effective solvent additive strategy is reported for tuning solution aggregates and the consequent solid-state structures of poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)). Specifically, the addition of 1-decanethiol (10-thiol) to the P(NDI2OD-T2) chloroform solution promoted the aggregation of P(NDI2OD-T2) chains because of the improved planarization of the backbones, which changed their crystal orientation in the film from coexisting edge-on and face-on to dominant edge-on when produced by drop-casting. The mechanism of this crystal orientation transformation is elucidated based on the interaction between 10-thiol and the side chains of P(NDI2OD-T2). The optical properties of P(NDI2OD-T2) films with different crystalline structures are closely correlated. Notably, the 10-thiol-enabled facile tailoring of the crystal orientation in P(NDI2OD-T2) can be readily applied to other D-A copolymers of interest. The findings of this study highlight a robust solvent additive strategy for regulating solution aggregates and crystal orientation in D-A copolymer films, which have applications in many optoelectronic devices.

New Chemical Dopant and Counterion Mechanism for Organic Electrochemical Transistors and Organic Mixed Ionic-Electronic Conductors.

Organic mixed ionic-electronic conductors (OMIECs) have varied performance requirements across a diverse application space. Chemically doping the OMIEC can be a simple, low-cost approach for adapting performance metrics. However, complex challenges, such as identifying new dopant materials and elucidating design rules, inhibit its realization. Here, these challenges are approached by introducing a new n-dopant, tetrabutylammonium hydroxide (TBA-OH), and identifying a new design consideration underpinning its success. TBA-OH behaves as both a chemical n-dopant and morphology additive in donor acceptor co-polymer naphthodithiophene diimide-based polymer, which serves as an electron transporting material in organic electrochemical transistors (OECTs). The combined effects enhance OECT transconductance, charge carrier mobility, and volumetric capacitance, representative of the key metrics underpinning all OMIEC applications. Additionally, when the TBA+ counterion adopts an "edge-on" location relative to the polymer backbone, Coulombic interaction between the counterion and polaron is reduced, and polaron delocalization increases. This is the first time such mechanisms are identified in doped-OECTs and doped-OMIECs. The work herein therefore takes the first steps toward developing the design guidelines needed to realize chemical doping as a generic strategy for tailoring performance metrics in OECTs and OMIECs.