Abstract A textured surface on a silicon solar cell effectively improves solar cell performance by reducing reflection losses. The standard process of pyramidal texturization on silicon wafers is widely implemented in manufacturing and laboratory wet chemical etching. Furthermore, the plasma etching process is usually used to create vertical hole texturization on the surface of silicon. In conjunction with that, laser texturization is known as an alternative method for plasma etching due to user-friendly equipment and a chemical-free process. According to infrared (IR) transmission, most of laser-textured samples show higher IR light transmission through n-Si as compared with normal textured sample. The creation of vertically groves from laser texturization on textured n-Si wafers will permit more light enter into deeper which allow more IR light being transmitted through the samples. In addition, the results from vertical grooves texturization on textured n-Si wafers via cross-section Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersion X-ray (EDX) and Energy Dispersive Spectroscopy (EDS) analyses reveal a the impact of laser texturization on the front surface textured n-Si after laser texturization process. The plotted and tabulated LIV data exhibit higher short current density (JSC), open circuit voltage (VOC), fill factor (FF), and overall efficiency of 14.3% for normal textured n-Si as compared with laser-textured on front surface textured which are less than 5%. The impact of laser texturization on n-Si will introduce defects and dislocations that act as recombination centers meanwhile thermal stress will degrade the material’s electronic properties.