In situ observation of the solidification process of Si combined with ex situ characterization revealed that small-angle grain boundaries (SAGBs) increase misorientation through two paths. First, coalescence with other SAGBs leads to a boost in misorientation and SAGBs tend to coalesce during solidification. Second, the absorption of individual lattice dislocations also increases the misorientation of an SAGB. Three possible mechanisms behind dislocation absorption by SAGBs have been proposed and are discussed in this paper. Among these mechanisms, the incorporation of same-sign lattice dislocations is regarded as the prominent mechanism when misorientation increases during solidification.