This study investigates the structure development and photoluminescence properties of high-purity greenish-yellow emitting LaGaO3 phosphors doped with dysprosium ions Dy3+. The phosphors were synthesized using a high-temperature solid-state reaction method. X-ray diffraction (XRD) confirmed the formation of a single-phase LaGaO3:Dy3+ structure and scanning electron microscopy (SEM) revealed uniform particle size and morphology. The phosphor exhibits the capability of being efficiently excited by ultraviolet 350 nm exhibiting the characteristic greenish-yellow emission with two strong peaks at 478 nm (cyan) and 572 nm (yellow), ascribing to the transitions of 4F9/2 → 6H15/2 and 4F9/2 → 6H13/2, respectively. The electronic transition mechanism is direct exchange interaction between activators, contributing to the concentration quenching. The phosphor was able to retain 67 % of its intensity without significant color change at an elevated temperature up to 25 °C to 150 °C. The CIE chromaticity coordinates of the emitted light were calculated and found in the desired greenish-yellow region. The electroluminescence performance of the LaGaO3:0.06Dy3+ phosphor was investigated using 365 nm LED chips to check their applicability in the field of white light-emitting diodes (WLEDs). The synthesized phosphors demonstrated high thermal stability, making them suitable for white-LED applications. The study highlights the potential of LaGaO3:Dy3+ phosphors in enhancing white-LEDs' color quality and efficiency.
Read full abstract