In this study, La2(TiZrSnHfGe)2O7 high entropy oxides were firstly prepared by solid state reaction method. The effects of different sintering temperatures on the structure, morphology and dielectric properties were studied. When the pre-calcination temperature is 1300 °C, the powder exhibits a single pyrochlore phase instead of defective fluorite phase. The existence of high entropy affects the changes in the crystal structure of A2B2O7 type oxides, resulting in lattice distortion. The dielectric results showed that the ceramics have certain frequency dispersion, and the dielectric properties are affected by temperature and frequency. Due to the high entropy effect, the La2(TiZrSnHfGe)2O7 ceramic exhibits good dielectric stability at both high and low frequencies. The formation of defect dipole clusters in the system results in the increase of dielectric constant. It is feasible to change the dielectric properties of ceramics by designing high entropy oxides, which showed the potential value in microelectronics field.