Diode Current Research Articles

Absorber-Free Mode-Locking of a Hybrid Integrated Diode Laser at Sub-GHz Repetition Rate

We demonstrate absorber-free passive and hybrid mode-locking at sub-GHz repetition rates, using a hybrid integrated extended cavity diode laser operating near 1550 nm. The laser is based on InP as a gain medium and a Si3N4 waveguide feedback circuit. Absorber-free Fourier domain mode-locking with ≈15 comb lines at around 0.2 mW total power is achieved with repetition rates around 500 MHz, using three highly frequency-selective micro-ring resonators that extend the on-chip cavity length to 0.6 m. To stabilize the repetition rate, hybrid mode-locking is demonstrated by weak RF modulation of the diode current. The RF injection reduces the Lorentzian linewidth component from 8.9 kHz to a detection-limited value of around 300 mHz. To measure the locking range of the repetition rate, the injected RF frequency is tuned with regard to the passive mode-locking frequency and the injected RF power is varied. The locking range increases approximately as a square-root function of the injected RF power. At 1 mW injection, a wide locking range of about 80 MHz is obtained. We also observe the laser maintaining stable mode-locking when the DC diode pump current is increased from 40 mA to 190 mA, provided that the cavity length is maintained constant with thermo-refractive tuning.

A Flyback Converter with a Simple Passive Circuit for Improving Power Efficiency

This paper proposes an effective method to improve the power efficiency of the flyback converter in the continuous conduction mode (CCM). The proposed converter uses a simple passive circuit to reduce the switching power losses. The current through the output diode can be shifted to a new branch where one diode, one inductor, and one auxiliary winding of the transformer are included. The output diode current can be reduced to zero for the zero-current switching of the output diode. The additional inductor is used to control the changing rate of the additional diode current to reduce the reverse-recovery current. Keeping the simplicity of the passive method, the proposed converter improves the power efficiency compared to the conventional converter. The circuit configuration and the operation principle are described. The design considerations are presented, including the simulation verification. The experimental results for a 45 W prototype are discussed to evaluate the performance of the proposed converter. The proposed converter has achieved a power efficiency of 93.5% for the rated load condition, improving the power efficiency. The applications of the proposed converter are also discussed for the future research directions.

Enhanced luminescence efficiency in GaN-based blue laser diodes by H plasma technology

To the best of our knowledge, this paper is the first to report the application of H plasma treatment technology to the treatment of laser diode ridge. Through the H plasma passivation on the ridge of the laser diode, a neutral complexes layer (i.e., Mg-H) is formed on the ridge, which effectively reduces ridge leakage current, thus reducing the threshold current of the laser diode and significantly improving the slope efficiency. The ridge were treated with H plasma using the Oxford Plasmalab System 100 ICP 180. The lasers' leakage current, optical power, emission wavelength, and other parameters were measured using a Cascade150 + B1505A probe station system, along with matched optical power meters and fiber optic spectrometers. Specifically, this study successfully fabricates a GaN-based blue laser diode characterized by a threshold current as low as 0.42 A and a slope efficiency as high as 1.96 W/A. Compared with the traditional silicon oxide-mediated ridge treated laser, the threshold current of the laser passivated by H plasma is reduced by 0.13 A, and the slope efficiency is increased by 0.56 W/A. This research not only enhances the performance of laser diodes but also has the potential to expand their application in multiple fields.

Degradation mechanism of SiC diodes under thermal and irradiation stress

Abstract Silicon carbide (SiC)-based diodes are widely used due to their high temperature resistance. In this paper, breakdown voltage of 4H-SiC JBS diodes and capacitance-voltage of 4H-SiC MOS capacitors with identical interfacial structure were both measured at high temperature to study their interfacial properties. By analyzing the variation of interfacial properties, the correlation between thermal stress and failure mode of 4H-SiC JBS diodes was further established to reveal their degradation mechanism. During initial high temperature storage, interfacial negative effective charge density of 4H-SiC JBS diodes may increase, leading to the decrease of breakdown voltage. As storage time increases, interfacial charge density began reducing, resulting in the increase of breakdown voltage. Avalanche luminescence verifies that the variation of interfacial charge density under thermal stress led to the degradation of 4H-SiC JBS diodes and further affected their breakdown voltage. Finally, degradation mechanism of SiC-JBS, SiC-SBD and SiC-PIN diodes under irradiation stress was investigated. After irradiation, forward current of some SiC diodes increased at a small forward voltage. However, the reverse characteristics deteriorated obviously and even failed.

Electrically pumped random laser device based on Pd/SiO2/ZnO nanorods MIS structure

Electrically pumped random lasing based on Pd/SiO2/ZnO nanorods (NRs) structures is demonstrated. Chemical bath deposition (CBD) technique was used to synthesize the ZnO NRs. Then, an insulating layer of SiO2 was deposited via radio frequency (RF) magnetron sputtering. After that, direct current (DC) magnetron sputtering was used to deposit palladium (Pd) metal contacts on the sample through a shadow mask. The electrical, morphological as well as optical characteristics of the ZnO NRs were analyzed. The device exhibits typical Schottky diode current–voltage (I-V) characteristics at a turn-on voltage of 6.18 V. The electroluminescence (EL) spectra shows good random lasing behavior with lasing peaks centered at approximately 380 nm and exhibited a threshold current of 37.5 mA. This report reveals Pd as a relatively cheaper material and low-cost CBD fabrication method is sufficient to fabricate electrically pumped random laser devices. Furthermore, this report also present a new way to interpret the mechanism of random lasing in the device.

Addressing challenges inverse problem with convolutional neural networks and regulation techniques: Applications in extraction of physical parameters of semiconductors devices

The instability of the inverse problem is caused by its nonlocal and non-causal nature. This study addresses the inverse problem of determining the physical parameters of semiconductor devices. Based on statistical inversion theory, the probability distribution (posterior distribution) of the SBHs has been estimated by convolutional neural networks. Regularization techniques were then applied to such a distribution to accurately determine the SBHs of semiconductor devices. The results reveal that the fluctuations in the predicted SBHs by convolutional neural networks are similar to the amplitude between the upper and lower envelopes of the free decay curve. The method achieves a maximum relative error below 3.4% when using theoretical diode current–voltage data as input and maintains a relative error of less than 7% when compared to traditional methods when using experimental current–voltage data. Furthermore, the proposed method offers a mathematical interpretation of the inverse problem and demonstrates the capability of the proposed method to extract the physical parameters of semiconductor devices with a small amount of data.

Deep learning assisted optimization of Ka-band relativistic backward wave oscillator operating in TM03 mode with low guiding magnetic field

To accelerate the design of a high-power microwave device, a deep learning assisted multi-objective optimization method is used to optimize a Ka-band relativistic backward-wave oscillator (RBWO) operating with a low magnetic field. Particle-in-cell simulation results show that the optimized RBWO with a tooth-shaped slow wave structure (SWS) can generate microwave pulses with an output power of 1.24 GW and an operating frequency of 26.8 GHz under a diode voltage of 623.3 kV, and the diode current is 6.56 kA at a guiding magnetic field of 0.8 T. Compared with the original RBWO, the output power of the optimized RBWO has been increased by 201.2%, and the beam-to-microwave conversion efficiency has increased from 10.0% to 30.3%. The detailed analysis reveals that in an overmoded RBWO with low guiding magnetic fields, the introduction of a tooth-shaped SWS is beneficial to mode competition, improves output power, and decreases microwave starting time.

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

Abstract In the era of Internet of Things (IoTs), an energy-efficient ultraviolet (UV) photodetector (PD) is highly desirable considering the massive usage scenarios such as environmental sterilization, fire alarm and corona discharge monitoring. So far, common self-powered UV PDs are mainly based on metal-semiconductor hetero-structures or p–n heterojunctions, where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity. In this work, an extremely low-voltage field-effect UV PD is proposed using a gate-drain shorted amorphous IGZO (a-IGZO) thin film transistor (TFT) architecture. A combined investigation of the experimental measurements and technology computer-aided design (TCAD) simulations suggests that the reverse current (I R) of field-effect diode (FED) is highly related with the threshold voltage (V th) of the parental TFT, implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current. Driven by a low bias of −0.1 V, decent UV response has been realized including large UV/visible (R 300/R 550) rejection ratio (1.9 × 103), low dark current (1.15 × 10−12 A) as well as high photo-to-dark current ratio (PDCR, ∼ 103) and responsivity (1.89 A/W). This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias, which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

In this paper, we studied the effect of an electromagnetic field of an ultrahigh frequency on the I–V characteristics of tunnel diodes. The influence of thermionic current on the change in the ratio of the values of tunnel currents at depth and the peak formed in the tunnel diode as a result of a strong electromagnetic field and on the change in the ratio of the values of tunnel currents at the highest and lowest points without exposure to a strong electromagnetic field. The I–V characteristics of a tunnel diode under the action of a microwave field is determined based on the theory of Knott and Demassa and the Tsu-Esaki model. The characteristics of the Tsu-Esaki and Karlovsky models used to determine the effect of the tunnel current in the extremely high frequency field (EHF) are shown. Chynoweth's model and Knott and Demassa's theory have shown that in germanium-based tunnel diodes, under an extremely high frequency (EHF) field, the amount of excess current generated in the tunnel diode increases. According to the Tsu-Esaki theory and Knott and Demassa theory is found to decrease the value of the differential resistance of a tunnel diode with a p-n junction under the action of a microwave field, regardless of the type of heterostructure or doping level. According to the Tsu-Esaki theory and Knott and Demassa found decrease in the diffusion capacitance of a tunnel diode with a p-n junction under the action of a microwave field, regardless of the type of heterostructure or doping level. A decrease in the transparency coefficient due to an increase in the internal field at the p-n junction boundary of a Ge-based tunnel diode under the action of a microwave field has been established. A formula is determined for determining the total current of a tunnel diode under the action of both microwave and magnetic fields, taking into account the transparency coefficient of the tunnel diode.

Voltage and Current Characteristics of Schottky Barrier Diodes and Rectifier Diodes Exposed to Standard Lightning Impulse Voltage

Lightning surges are one of the major reasons of bypass diode (BPD) failure in photovoltaic modules. In this study, standard lightning impulse voltages (SLIVs) were directly applied to Schottky barrier diodes (SKB diodes) and rectifier diodes (PNJ diodes) with different electrical specifications. The critical voltages Vc of SLIV at which the diodes were damaged and the temporal variations of diode current (iD) and voltage (vD) were measured. It was found the iD‐vD characteristics can be categorized into a total of eight patterns: four patterns for the forward SLIV application and the four for the reverse SLIV application, regardless of diode types. The measured results imply that the irreversible voltage dip that occurs before the termination of the reverse breakdown contributes significantly to diode damage in the both forward and reverse SLIV applications. SKB diodes exposed to the reverse SLIV are easily damaged at the lowest magnitude of SLIV among all combinations of diode types and SLIV directions. Once a diode has been damaged due to the first SLIV application, the second application of SLIV to the same diode causes remarkable change in the iD‐vD characteristic even if the magnitude of the second SLIV is smaller than Vc. © 2024 Institute of Electrical Engineers of Japan. Published by Wiley Periodicals LLC.

Electrical Characterization and Ammonia Gas Response of a p‐Si/n‐poly[benzimidazobenzophenanthroline] Thin‐Film Junction Diode

The electrical characterization and ammonia vapor (NH3) response of a p‐Si/n‐poly[benzimidazobenzophenanthroline] (n‐BBL) thin‐film junction diode are reported. The presence of a depletion layer at the n‐BBL/p‐Si interface is verified via capacitance–voltage measurements, and the built‐in potential is ≈1.8 V. Using the standard diode equation for data analysis, the turn‐on voltage, rectification ratio, and ideality parameter are found to be 2 V, 16, and 6, respectively. The diode is also tested in the presence of NH3 vapor where it retained its asymmetric J–V behavior with increased currents and an insignificant change in device parameters. NH3 is believed to interact with the adsorbed O2− species on the n‐BBL surface liberating electrons that enhance the diode current. The response time, recovery time, and sensitivity of the diode are 65 s, 121 s, and 52%, respectively. The removal of the gas restores the diode characteristics to their near original shape making it reusable. The diode is also electrically characterized as a function of temperature and is found to retain its rectifying behavior down to 150 K. The rectifying and gas‐sensing features make the diode multifunctional, which expands the range of applications of this ladder‐type conducting polymer.

Controlling GaN-Based Laser Diode Performance by Variation of the Al Content of an Inserted AlGaN Electron Blocking Layer.

The leakage of the electronic current of a laser diode (LD) has some significant influences on the performance of the LD. In this study, commercial simulation software LASTIP is used to numerically evaluate the performances of LDs by using different wavelengths and Al contents of the electron blocking layer (EBL). These LDs a adopt multilayer structure, which contains cladding layers, waveguide layers, multiple quantum well layers, contact layers and an AlxGa1-xN EBL. The influence mechanism of EBL is theoretically examined by analyzing the simulated performances. It is found that for short-wavelength violet LDs, the electrical and optical properties of the LD will reach the optimum state when the Al content (x) in the EBL is nearly 0.25. For long-wavelength green LDs, it will achieve optimum electrical and optical properties when the Al content in the EBL is as low as possible. We also compare the simulation results of LDs with emission wavelengths in the range of violet and green, including blue cyan, for a more general evaluation. According to the simulated results, it is verified that the influence of the EBL's Al content on LD performance enhances as the wavelength increases.

Multistage converter with reduced switch voltage stress and diode current stress

AbstractThe utilization of switched inductors, involving parallel charging and series discharging of inductors, is extensively embraced in diverse DC–DC converters for attaining high voltage gain; nevertheless, the stress on switch voltage and diode current escalates considerably with an increased count of inductors integrated into the switched inductors network. In the classical multistage switched inductor converter, the switch voltage aligns with the output voltage, and the diode experiences a high current as the number of stages increases. This research recommends a DC–DC multistage converter for energy conversion and high voltage gain with low stress. In this paper, a novel multistage switched inductor converter is introduced and designed to attain higher voltage gain while mitigating the stresses on switch voltage and diode current. The proposed circuit is created by replacing the standard multistage switched inductor converter's possible diodes with power switches. All of the switching devices are connected in such a way that the output voltage and input current are shared by all of the switches and diodes, respectively. As a consequence, the voltage stress on switches and the current stress on diodes are comparatively low, resulting in a high efficiency compared to a typical multistage switched inductor converter. It's interesting to note that the proposed converter and a typical multistage switched inductor converter both require the same amount of components. Different operation modes, analysis, a non‐ideal model, and a comparison of the suggested and recently constructed converters are discussed. The effectiveness and performance of the circuit are validated experimentally.

Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation

Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation

Efficiency and PF Improving Techniques with a Digital Control for Totem-Pole Bridgeless CRM Boost PFC Converters

A totem-pole bridgeless boost converter is one of the most promising topologies for the power factor correction (PFC) stage in high-power applications due to its high efficiency and small number of components. However, due to the totem-pole structure of the field-effect transistor (FET), very high switching loss occurs via the reverse recovery current of the body diode. To solve these problems, critical mode (CRM) control is a good solution to achieve the valley switching technique. With valley switching of CRM control, the switching loss decreases drastically with decreasing turn-on voltage. But, although the CRM control enables valley switching, it is hard to make an exact valley switching control with general zero-voltage detection circuits. In addition, when a frequency limitation scheme is applied to prevent a very high frequency, the switch can operate with hard switching at the boundary of the frequency limitation. Furthermore, the CRM boost PFC has a low PF and high total harmonic distortion (THD) under light-load conditions due to the large negative current resulting from resonance between the inductor and parasitic capacitance. It becomes worse at near-zero input voltage since the resonance current becomes larger near zero-input voltage. Therefore, in this paper, a totem-pole bridgeless boost PFC converter with high efficiency, high PF, and low THD is developed using TMS320F28377 by Texas Instruments. Based on the basic digital structure of the totem-pole bridgeless converter, the proposed controls help with exact valley switching, PF and THD improvement, and frequency limitation. The prototype converter is verified using 90–264 VAC input voltages and 450 V/3.3 kW output specifications.

A Tutorial on the One-Dimensional Theory of Electron-Beam Space-Charge Effect and Steady-State Virtual Cathode

The space-charge effects of pulsed high-current electron beams are very important to high-power particle beam accelerators and high-power microwave devices. The related physical phenomena have been studied for decades, and a large number of informative publications can be found in numerous scientific journals over many years. This review article is aimed at systematically summarizing most of the previous findings in a logical manner. Using a normalized one-dimensional mathematical model, analytical solutions have been obtained for the space-charge-limited current of both planar diode and drifting space. In addition, in the case of a beam current higher than the space-charge-limited current, the virtual cathode behavior and beam current reflection are quantitively studied. Furthermore, the criteria of steady-state virtual cathode formation are investigated, which leads to the physical understanding of the unstable nature of the virtual cathode. This review article is expected to serve as an integrated source of related information for young researchers and students working on high-power microwaves and pulsed particle beams.

Silicon ultrafast recovery diode with leakage current reduced via the combined lifetime process of gold diffusion and electron-beam irradiation

We investigated the reduction in the reverse-biased leakage current of Si ultrafast recovery diodes via a combined lifetime process involving Au diffusion and bulk electron-beam irradiation (EI). The leakage current of the combined-processed diode was significantly reduced to less than one-third of that of the diode processed solely with Au diffusion, maintaining a similar switching time of 32 ns. This reduction was not achievable with the sole use of EI. Deep-level transient spectroscopy revealed that the reduction in the leakage current was due to the coexistence of the deep trap level of Au (E c-0.51 eV) and the shallow trap level of the defects (E c-0.39 eV) generated via EI as lifetime killers. By combining the deep and shallow trap levels, the lifetime of the carriers generated in the depletion layer of the reverse-biased p-n junction becomes long and consequently, the leakage current is reduced. By maintaining the trap density ratio of defects to diffused Au above 0.28, the leakage current was reduced to less than one-third of that in the solely Au-diffused diode, while maintaining a similar switching time.

Bi2O3 doped indium tin oxide thin films fabricated via liquid metal printing

Indium tin oxide (ITO) is a classical transparent conducting oxide (TCO), which is widely used in semiconductor industry. Reducing the cost of preparing ITO films and further improving its optoelectronic properties are urgent technological challenges to be solved. Here, we proposed to tackle this issue through doping elements in ITO films via liquid metals printing process. Conceptual experiments demonstrate the synthesis of Bi2O3 doped ITO at the centimeter scale using low-temperature fabrication techniques, which display the advantages of high uniformity, strong visible light transmission and low resistivity. The band gap decreases from 3.88 eV to 3.07 eV with increasing doping of Bi2O3 and demonstrates n-type semiconductor nature. The Schottky diodes based on doped ITO films show typical Ohmic contact. The best output current of doped ITO Schottky diodes can reach 1261.7 μA at 10 V, which is about 41 times the output current of the undoped ITO Schottky diodes. Additionally, the nanofilm resistance decreased linearly with increasing Bi mass fraction in ITO film. Moreover, Schottky diodes have good stability in the atmosphere within half a year and multilayer printing can enhance output current. The process as established here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.

Reversible charge injection-controlled resistance switching in BiFeO3 ferrodiodes

The ferroelectric diode effect is a promising candidate for resistive memory applications, but the precise role of defects in the current switching mechanism remains unclear. Here, we investigated ferroelectric SrRuO3/BiFeO3/SrRuO3 capacitors and observed strong diode current. The capacitors exhibited preferred polarization orientation toward the bottom electrode in the presence of an imprint field, as evidenced by poor polarization retention of upward polarizations at a bias voltage of 1 V. Interfacial defect-mediated charge injection and trapping enabled by negative voltage poling reduced the built-in field and improved the retention property at the expense of reduced diode current. This phenomenon can be reversed by long-time positive voltage poling, allowing the deeply trapped charges to be expelled out of the trap for the rejuvenation of the diode current. Our study provides experimental evidence that interfacial defects modify the diode current in a manner opposite to that of the switched polarization.

Carrier lifetime modulation on current capability of SiC PiN diodes in a pulsed system

Silicon carbide (SiC) PiN diode has shown substantial promise as the freewheel diode for switch protection in a pulsed system. In this paper, we investigate the carrier lifetime (τ) modulation on pulsed current capability of SiC PiN diodes. The carrier lifetime in 4H–SiC is modulated by the generation of the Z1/2 center through neutron irradiation. Surprisingly, we found that the pulsed current of SiC PiN diodes shows a limited improvement when the carrier lifetime (τ) increases from 0.22 to 1.3 μs, while is significantly promoted as the carrier lifetime increases from 0.03 to 0.22 μs. This changing trend is obviously different from the on-state resistance, which decreases with the increased carrier lifetime. The simulation result indicates that the heat generation (i.e., maximum temperature rise) inside the PiN diodes, especially in the drift layer, is remarkably aggravated in the pulse tests for τ < 0.1 μs, but which is significantly suppressed as carrier lifetime rises to 0.2 μs and above. Therefore, the dependence of pulsed current on carrier lifetime is ascribed to the heat generation resulting from the carrier lifetime controlled conductivity modulation effect, which hence affects the temperature rise and brings about the failure of SiC PiN diodes under high pulsed current.