Dimensional Topological Insulators Research Articles

Topological superconductors with spin-triplet pairings and Majorana Fermi arcs

Abstract We construct a three-dimensional topological superconductor Bogoliubov-de Gennes(BdG) Hamiltonian with the normal state being a three dimensional topological insulator. By introducing inter-orbital spin-triplet pairings term △3, there are topological Majorana nodes in the bulk, and they are connected by Majorana Fermi arcs on the surface, similar to the case of Weyl semimetal. Furthermore, by adding an inversion breaking term to the normal state, momentum independent pairing terms with different parities can coexist in the BdG Hamiltonian, which creates more Majorana modes similar to Andreev bound states and a richer phase diagram.

Octastanene Halogenide: A Family of Two-dimensional Nodal Line Semimetals and Topological Insulators

With the first principle calculation and k-p model, we find that the Octastanene halogenide is a node line semimetal(NLs) without spin-orbit coupling(soc), forming a fermi ring centered on point G and protected by mirror symmetry. The band simulated by the k-p model fits well with the band calculated by GGA-PBE at point G, and the energy dispersion calculated by the Hamiltonian of the model explains well the formation of node rings. Under the SOC effect, NLs become a two dimensional Topological Insulators(TIs). With the increase of atomic number, the large band gap reaches about 0.16 ev, and the clear spiral edge state of the quantum spin hall effect is obtained. The phonon spectra of the two structures show that they are dynamically stable. These findings provide a new two dimensional material series for the future design and manufacture of NLs and TIs.

Extracting unconventional spin texture in two dimensional topological crystalline insulator bismuthene via tuning bulk-edge interactions

Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topological protection. In this study, we investigate how bulk-edge interactions can influence the edge transport in planar bismuthene, a TCI with metallic edge states protected by in-plane mirror symmetry, using first principles calculations and symmetrized Wannier tight-binding models. By exploring the impact of various perturbation effects, such as device size, substrate potentials, and applied transverse electric field, we examine the evolution of the electronic structure and edge transport in planar bismuthene. Our findings demonstrate that the TCI states of planar bismuthene can be engineered to exhibit either a gapped or conducting unconventional helical spin texture via a combination of substrate and electric field effects. Furthermore, under strong electric fields, the edge states can be stabilized through a delicate control of the bulk-edge interactions. These results open up new directions for discovering novel spin transport patterns in topological materials and provide critical insights for the fabrication of topological spintronic devices.

Strained topological insulator spin field effect transistor

The notion of a spin field effect transistor, where transistor action is realized by manipulating the spin degree of freedom of charge carriers instead of the charge degree of freedom, has captivated researchers for at least three decades. These transistors are typically implemented by modulating the spin orbit interaction in the transistor’s channel with a gate voltage, which causes gate-controlled spin precession of the current carriers, and that modulates the channel current flowing between the ferromagnetic source and drain contacts to implement transistor action. Here, we introduce a new concept for a spin field effect transistor which does not exploit spin-orbit interaction. Its channel is made of the conducting surface of a strained three dimensional topological insulator (3D-TI) thin film and the transistor function is elicited by straining the channel region with a gate voltage (using a piezoelectric under-layer) to modify the energy dispersion relation, or the Dirac velocity, of the TI surface states. This rotates the spins of the carriers in the channel and that modulates the current flowing between the ferromagnetic source and drain contacts to realize transistor action. We call it a strained-topological-insulator-spin-field-effect-transistor, or STI-SPINFET. Its conductance on/off ratio is too poor to make it useful as a switch, but it may have other uses, such as an extremely energy-efficient stand-alone single-transistor frequency multiplier.

Influence of magnetic field on the transport properties of ferromganet/ferromagnet/s-wave superconductor junctions formed on the surface of a three-dimension topological insulator

We study the influence of magnetic field on the transport properties of ferromagnetic metal (FM)/ferromagnetic insulator (FI)/s-wave superconductor (s-wave SC) junctions and FM/FM/s-wave SC junctions formed on the surfaces of three dimensional topological insulators (3DTI), where the magnetic field is applied perpendicular to the s-wave SC surfaces. For a broad range of the magnetic field strength, the conductance is investigated. Unlike the preceding studies, we apply the magnetic field to the superconductor surfaces of the junctions instead of the magnetization induced by the ferromagnets adjacent to their surfaces. We determine the dependence of conductance on the magnetic field for the cases of parallel and antiparallel magnetizations and reveal that the magnetoresistance sensitively depends on the magnitude of the magnetic field for the biases below the renormalized gap. The results obtained in this work will find applications in superconductor spintronics.

Ultrafast electronic heat dissipation through surface-to-bulk Coulomb coupling in quantum materials

The timescale of electronic cooling is an important parameter controlling the performance of devices based on quantum materials for optoelectronic, thermoelectric and thermal management applications. In most conventional materials, cooling proceeds via the emission of phonons, a relatively slow process that can bottleneck the carrier relaxation dynamics, thus degrading the device performance. Here we present the theory of near-field radiative heat transfer, that occurs when a two-dimensional electron system is coupled via the non-retarded Coulomb interaction to a three-dimensional bulk that can behave as a very efficient electronic heat sink. We apply our theory to study the cooling dynamics of surface states of three dimensional topological insulators, and of graphene in proximity to small-gap bulk materials. The ``Coulomb cooling'' we introduce is alternative to the conventional phonon-mediated cooling, can be very efficient and dominate the cooling dynamics under certain circumstances. We show that this cooling mechanism can lead to a sub-picosecond time scale, significantly faster than the cooling dynamics normally observed in Dirac materials.

Electron tunneling through HgTe/CdTe quantum wells with all-electrical superlattice structures

We theoretical investigate the electron transport through HgTe/CdTe quantum wells (QWs) heterostructure interfaces with periodic electrical potential modulations in this work. We find Fabry–Pérot resonant tunneling with perfect transmission through a two dimensional topological insulator superlattice structure in HgTe/CdTe QWs, which is supposed to be experimentally observable. This unique feature indicates potential applications of Fabry–Pérot interferometers device. The transport properties of electrons tunneling through the superlattice structures can be adjusted by tuning the Fermi energy, electron incident angle, the electrical modulation numbers and modulation amplitude. We also find the enhanced Fabry–Pérot resonance tunneling due to the electric-induced Rashba spin–orbit interaction (RSOI). This all-electrical mechanism may pave a realistic way to control the electron transport in two dimension topological insulator from a device application perspective.

Counterpropagating topological and quantum Hall edge channels

The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to h/e2. By tuning the disorder using different fabrication processes, we find evidence that this unexpected ν = 1 plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device.

Giant photoinduced inverse spin Hall effect of the surface states in three dimensional topological insulators Bi2Te3 with different thickness.

The photoinduced inverse spin Hall effect (PISHE) has been studied in three dimensional (3D) topological insulator (TI) Bi2Te3 thin films with different thicknesses (3, 5, 12 and 20 quintuple layer (QL)). The sign of the PISHE current flips only once in the 3- and 20-QL Bi2Te3 films, but it flips three times in the 5-, 7- and 12-QL samples. The three-times sign flip is due to the superposition of the PISHE current of the top and bottom surface states in Bi2Te3 films. By analyzing the x-ray photoelectron spectroscopy (XPS) of the Bi2Te3 films, we find that the top surface of the 3- and 20-QL Bi2Te3 films are severely oxidized, leading to only one sign flip in the PISHE. The PISHE contributed by the top and bottom surface states in Bi2Te3 films have been successfully separated by fitting a theoretical model to the PISHE current. The impact of the bulk states on PISHE current has been determined. The PISHE current is also measured at different light powers, and all the measurement results are in good agreement with the theoretical model. In addition, it is found that the PISHE current in Bi2Te3 films grown on Si substrate is more than two orders larger than that grown on SrTiO3 substrates, which can be attributed to the larger absorption coefficient for Bi2Te3/Si samples. It is revealed that the PISHE current in 3D TI Bi2Te3 is as large as 140 nA/W in the 3-QL Bi2Te3 film grown on Si substrate, which is more than one order larger than that reported in GaAs/AlGaAs heterojunction (about 2 nA/W) and GaN/AlGaN heterojunction (about 1.7 nA/W). The giant PISHE current demonstrates that the TIs with strong SOC may have good application prospects in spintronic devices with high spin-to-charge conversion efficiency.

Berry-Phase Switch in Electrostatically Confined Topological Surface States.

Here, we visualize the trapping of topological surface states in the circular n-p junctions on the top surface of the seven-quintuple-layer three dimensional (3D) topological insulator (TI) Sb_{2}Te_{3} epitaxial films. As shown by spatially dependent and field-dependent tunneling spectra, these trapped resonances show field-induced splittings between the degenerate time-reversal-symmetric states at zero magnetic field. These behaviors are attributed unambiguously to Berry-phase switch by comparing the experimental data with both numerical and semiclassical simulations. The successful electrostatic trapping of topological surface states in epitaxial films and the observation of Berry-phase switch provide a rich platform of exploiting new ideas for TI-based quantum devices.

Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium.

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi2Te3 layer, a Gr/Bi2Te3/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 1012 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi2Te3/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi2Te3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.

Topological hybrid semimetal phases and anomalous Hall effects in a three dimensional magnetic topological insulator

In this work, we propose a ferromagnetic Bi2Se3 as a candidate to hold the coexistence of Weyl- and nodal-line semimetal phases, which breaks the time reversal symmetry. We demonstrate that the type-I Weyl semimetal phase, type-I-, type-II- and their hybrid nodal-line semimetal phases can arise by tuning the Zeeman exchange field strength and the Fermi velocity. Their topological responses under U(1) gauge field are also discussed. Our results raise a new way for realizing Weyl and nodal-line semimetals and will be helpful in understanding the topological transport phenomena in three-dimensional material systems.

Four dimensional second-order topological insulator based on a synthetic plasmonic metasurface.

It is possible to explore higher dimensional topological properties in lower dimensional structures by introducing additional synthetic dimensions. In this Letter, we construct a four-dimensional (4D) second-order topological insulator using gradient nanoparticle arrays arranged in a periodic lattice. The nanoparticle array has spatially varying inter-particle distance along x and y directions, which can be regarded as two synthetic dimensions. Different from higher-order topological insulators in classical wave systems, the higher-order topological states in this 4D system are protected by a pair of first Chern numbers in two-dimensional (2D) subspaces instead of by the quantized 2D Zak phases. It is shown that there exist (4-1)- and (4-2)-dimensional boundary states for both transverse and longitudinal collective resonant modes, which provides new, to the best of our knowledge, mechanisms for light confinement and control in such a plasmonic superlattice.

Flat topological bands and eigenstate criticality in a quasiperiodic insulator

The effects of downfolding a Brillouin zone can open gaps and quench the kinetic energy by flattening bands. Quasiperiodic systems are extreme examples of this process, which leads to new phases and critical eigenstates. We analytically and numerically investigate these effects in a two dimensional topological insulator with a quasiperiodic potential and discover a complex phase diagram. We study the nature of the resulting eigenstate quantum phase transitions; a quasiperiodic potential can make a trivial insulator topological and induce topological insulator-to-metal phase transitions through a unique universality class distinct from random systems. This wealth of critical behavior occurs concomitantly with the quenching of the kinetic energy, resulting in flat topological bands that could serve as a platform to realize the fractional quantum Hall effect without a magnetic field.

Tomonaga-Luttinger Liquid in the Topological Edge Channel of Multilayer FeSe.

A two-dimensional topological insulator exhibits helical edge states topologically protected against single-particle backscattering. Such protection breaks down, however, when electron-electron interactions are significant or when edge reconstruction occurs, leading to a suppressed density of states (DOS) at the Fermi level that follows universal scaling with temperature and energy, characteristic of Tomonaga-Luttinger liquid (TLL). Here, we grow multilayer FeSe on SrTiO3 by molecular beam epitaxy and observe robust edge states at both the {100}Se and the {110}Se steps using scanning tunneling microscopy/spectroscopy. We determine the DOS follows a power law, resulting in the Luttinger parameter K of 0.26 ± 0.02 and 0.43 ± 0.07 for the {100}Se and {110}Se edges, respectively. The smaller K for the {100}Se edge also indicates strong correlations, attributed to ferromagnetic ordering likely present due to checkerboard antiferromagnetic fluctuations in FeSe. These results demonstrate TLL in FeSe helical edge channels, providing an exciting model system for novel topological excitations arising from superconductivity and interacting helical edge states.

Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

We conducted mobility spectrum analysis on a high quality three dimensional topological insulator film of BiSbTeSe2 to extract mobility μ and carrier density n. Top and bottom gates were applied to tune the carrier density on top and bottom surfaces independently. At 1.5 K, when the conduction is entirely dominated by the Dirac surface states, we always find two dominant conduction channels (top and bottom surfaces), with μ=500–3000 cm2/(V s) and n on the order of 1012 cm−2. However, at sufficiently high temperature (T=85 K), when the bulk contributes, a third channel with maximum mobility μ ∼ 400 cm2/(V s) and n on the order of 1011–1013 cm−2 opens. Our data show the feasibility of the method to analyze the different conduction channels in a topological insulator, being also promising for other similar material systems.

Quantized spin Hall conductance in a magnetically doped two dimensional topological insulator

Soon after the discovery of the quantum spin Hall effect, it has been predicted that a magnetic impurity in the presence of strong Coulomb interactions will destroy the quantum spin Hall effect. However, the fate of the quantum spin Hall effect in the presence of magnetic impurities has not yet been experimentally investigated. Here, we report the successful experimental demonstration of a quantized spin Hall resistance in HgTe quantum wells dilutely alloyed with magnetic Mn atoms. These quantum wells exhibit an inverted band structure that is very similar to that of the undoped material. Micron sized devices of (Hg,Mn)Te quantum well (in the topological phase) show a quantized spin Hall resistance of h/2e2 at low temperatures and zero magnetic field. At finite temperatures, we observe signatures of the Kondo effect due to interaction between the helical edge channels and magnetic impurities. Our work lays the foundation for future investigations of magnetically doped quantum spin Hall materials towards the realization of chiral Majorana fermions.

Dimensional engineering of a topological insulating phase in Half-Heusler LiMgAs

We propose a novel technique of dimensional engineering to realize low dimensional topological insulator from a trivial three dimensional parent. This is achieved by confining the bulk system to one dimension along a particular crystal direction, thus enhancing the quantum confinement effects in the system. We investigate this mechanism in the Half-Heusler compound LiMgAs with face-centered cubic (FCC) structure. At ambient conditions the bulk FCC structure exhibits a semi-conducting nature. But, under the influence of high volume expansive pressure (VEP) the system undergoes a topological phase transition (TPT) from semi-conducting to semi-metallic forming a Dirac cone. At a critical VEP we observe that, spin-orbit coupling (SOC) effects introduce a gap of sim 1.5 meV in the Dirac cone at high symmetry point Gamma in the Brillouin zone. This phase of bulk LiMgAs exhibits a trivial nature characterized by the {mathbb {Z}}_2 invariants as (0,000). By further performing dimensional engineering, we cleave [111] plane from the bulk FCC structure and confine the system in one dimension. This low-dimensional phase of LiMgAs has structure similar to the two dimensional {text {1T-MoS}}_2 system. Under a relatively lower compressive strain, the low-dimensional system undergoes a TPT and exhibits a non-trivial topological nature characterized by the SOC gap of sim 55 meV and {mathbb {Z}}_2 invariant nu = 1. Although both, the low-dimensional and bulk phase exhibit edge and surface states, the low-dimensional phase is far more superior and exceptional as compared to the bulk parent in terms of the velocity of Fermions ({text {v}}_f) across the surface states. Such a system has promising applications in nano-electronics.

Stanene: A good platform for topological insulator and topological superconductor

Two dimensional (2D) topological insulators (TIs) and topological superconductors (TSCs) have been intensively studied for recent years due to its great potential for dissipationless electron transportation and fault-tolerant quantum computing, respectively. Here we focus on stanene, the tin analogue of graphene, to give a brief review of its development as a candidate for both 2D TI and TSC. Stanene is proposed to be a TI with a large gap of 0.3 eV, and its topological properties are sensitive to various factors, e.g., the lattice constants, chemical functionalization and layer thickness, which offer various methods for phase tunning. Experimentally, the inverted gap and edge states are observed recently, which are strong evidence for TI. In addition, stanene is also predicted to be a time reversal invariant TSC by breaking inversion symmetry, supporting helical Majorana edge modes. The layer-dependent superconductivity of stanene is recently confirmed by both transport and scanning tunneling microscopy measurements. This review gives a detailed introduction to stanene and its topological properties and some prospects are also discussed.

Quantum Hall effect and Landau levels in the three-dimensional topological insulator HgTe

This paper analyzes the magnetoconductance and the manifestations of the different charge carrier species in the entire parameter space of transport channels in three dimensional topological insulators