End-point detection (EPD) is important for controlling the chemical mechanical polishing process to prevent underpolishing and overpolishing. One EPD method using the relative current density on a Cu wafer involves an eddy current, which has advantages of noncontact and a fast response speed. However, the eddy current method has a large mean error at a low relative current density. To overcome the disadvantage, composition signal filtration uses a high mean error and long delay time using a moving average and 1-D Kalman filtration. After applying composition filtration, the mean error improved by approximately 94.7 %. Still, it is difficult to measure a thickness of 4000 Å or less with existing systems. A digital potentiometer was developed that changed the resistance in real time and improved the detection range. The step number for changing the resistance was 120 steps in the resistance range of 100–5000 Ω at approximately 40 Ω/step. When a digital potentiometer was applied, the EPD detection range improved by 85.8 % over the existing system. In other words, the developed system could measure a Cu wafer thickness of 586 Å.