Diffuse Phase Transition Behavior Research Articles

Effect of Ce infusion on the structural, dielectric, optical, transport and polarization behavior of Nd-modified triple-layered Aurivillius phase ceramic Bi3NdTi3O12

Herein, the effect of cerium substitution on the structural, dielectric, optical, impedance and leakage current characteristics of Nd modified triple layered Aurivillius phase compound of chemical composition Bi3NdTi3-xCexO12 is investigated. The polycrystalline samples are synthesized via ceramic fabrication technology. Room temperature X-ray analysis confirms their orthorhombic symmetry. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) analysis affirm microstructure and elemental composition of the compounds. The temperature-dependent dielectric study indicates diffused phase transition (DPT) behavior possibly induced by compositional fluctuations and random occupancy of equivalent crystallographic sites. Signature peaks pertaining to metal-oxide bond vibrations are also identified by FTIR study. Impedance spectroscopic study unravels negative temperature coefficient of resistance (NTCR) and non-Debye type relaxation in the samples. UV–Visible spectroscopy reveals a reduction in band-gap from 3.1 eV to 2.83 eV with cerium infusion from x = 0 to x = 0.3. It is due to the introduction of localized mid-gap states thus, suggesting the possibility of photovoltaic applications. Further analysis of electric modulus and impedance characteristics propounds prominent short-range carrier hopping with higher cerium percentage. The room temperature I–V study suggests an increase in the voltage-dependent non-linearity with cerium incorporation. Leakage current analysis reveals a transition from Ohmic to space charge limited conduction (SCLC) type behavior with high electric field. Room temperature polarization study confirms their ferroelectric property. Frequency dependent ac conductivity obeys Jonscher double power law clearly indicating the presence of two dispersive regions dominated by grain and grain boundary effects. Reduced bandgap, enhanced voltage dependent non-linearity, NTCR type property and saturated P-E loops observed in the sample unravel the multifunctional aspects of the fabricated compound.

Effect of the DC-bias electric field on the phase transition characteristics in PMN ceramics

Relaxor ferroelectrics play an important role for technological applications, mainly for using in the fabrication of actuators, transducers and sensors. Therefore, there has been an increasing interest of the scientific community in the investigation of the physical properties of such system in order to better elucidate the observed intriguing and unsolved phenomena. In this work, relaxor Pb(Mg1/3Nb2/3)O3 (PMN) ceramic system was prepared and the dielectric properties have been studied in details as a function of frequency, temperature and magnitude of the DC-bias electric field. Results reveal that the temperature dependence of the dielectric permittivity can be successfully described in the whole analyzed temperature range (100–400 K) by using a macroscopic statistical model, which describe the dielectric response in relaxor systems with diffuse phase transition (DPT). By using this phenomenological model, the temperature and DC-bias electric field dependences of the dielectric permittivity have been also revisited, from the analysis of the DPT behavior, promoting a careful discussion on the nature of the phase transition in relaxors materials. The calculated sizes of the polar nanoregions (PNRs) suggest the development of a structural disorder in the studied system, which promote the high diffuse ferroelectric transition as the amplitude of the DC-bias electric field increases.

Dy3+doped (K,Na)NbO3-based multifunctional ceramics for achieving enhanced temperature-stable piezoelectricity and non-contact optical temperature sensing performance

A novel multifunctional KNN-based ceramics with decent piezoelectricity and intriguing photoluminescence are achieved through simultaneous modulation of diffused phase transition behavior and unit cell distortionviaoptimizing the Dy3+content.

Giant room-temperature electrocaloric effect within wide temperature span in Sn-doped Ba0.85Ca0.15Zr0.1Ti0.9O3 lead-free thin films

The electrocaloric (EC) effect cooling technique of environmentally friendly lead-free thin film materials driven by electric fields has recently gained tremendous attention due to the urgent demand for microelectronic and integrated circuit refrigeration devices. However, the widespread use of lead-free materials in EC devices is seriously hindered due to the small electrocaloric temperature change (ΔT) within a narrow operation temperature span (Tspan) near room temperature. Here, lead-free Ba0.85Ca0.15Zr0.1Ti0.9-xSnxO3 (BCZT-xSn, 0 ≤ x ≤ 0.03) thin films were prepared on substrates (Pt/Ti/SiO2/Si) via a sol-gel route. The BCZT-0.02Sn thin film presents an excellent EC effect (ΔT = 32.74 K, ΔS = 37.18 J kg−1 K−1) and large EC strength (ΔT/ΔE = 0.033 K cm kV−1, ΔS/ΔE = 0.037 J cm K−1 kg−1 kV−1) over a wide Tspan (∼26 K) under 1000 kV cm−1 near room temperature. The giant ΔT is mainly attributed to the emergence of an intermediate O phase and the formation of a multiphase (R, O and T phases) coexistence structure at room temperature, while the diffuse phase transition behavior is responsible for the wide Tspan. Our study provides a new idea for developing environment-friendly EC materials with an excellent room-temperature ΔT over a broad operational temperature region.

Li+ and Sm3+ co-doped AgNbO3-based antiferroelectric ceramics for high-power energy storage

Ag1-x-3yLixSmyNbO3 (x≤0.05, y≤0.05) (ALSN) antiferroelectric ceramics were successfully prepared via conventional solid-state reaction and sinter routes in oxygen atmosphere for improving the energy storage characteristic of pure AgNbO3. The results indicate that all of the studied compositions display a pure orthorhombic antiferroelectric (AFE) perovskite structure, while their key parameters of electric-field-induced antiferroelectric-ferroelectric transition can be affected by Li+ or/and Sm3+ doping contents. The Sm3+ doping can enhance the stability of antiferroelectric state, giving rise to higher antiferroelectric-ferroelectric transition electric-field (EF and EB), while Li+ doping can reduce EF and EB for Sm3+ doped AgNbO3 with low Sm3+ content (y≤0.03). When co-doping the same amounts of Li+ and Sm3+ at x=y≤0.03, both EF and EB almost remain unchanged. At x=y=0.05, the diffuse phase transition (DPT) behavior of antiferroelectric-paraelectric (AFE-PE) phase transition occurred, resulting in a “slim-like” double-polarization hysteresis with significantly enhanced EF. Due to these features, both Wrec and η are improved compared with pure AgNbO3. The Wrec and η with composition at x=y=0.05 is 2.33 J/cm3 and 58% under applying electric field of 240 kV/cm, respectively. The results suggest that building DPT behavior of AFE-PE phase transition could be an alternative strategy to improve the energy storage characteristic of AgNbO3.

Electrocaloric effect and temperature dependent scaling behaviour of dynamic ferroelectric hysteresis studies on modified BTO

The large electrocaloric effect associated with the ferroelectric-relaxor and ferroelectric-paraelectric phase transition, and various temperature dependent scaling behaviours on A-site modified BaTiO3 (Ba1-xSrxTiO3, x = 0.00, 0.10, 0.20, and 0.25) have been reported in this article. The compositionally induced relaxor behaviour with diffuse phase transition has been reported. The Rietveld refinement of XRD patterns reveals that all the samples crystallize to the P4mm space group. Raman spectra analysis at room temperature supports the XRD patterns analysis. The diffuse phase transition behaviour of the prepared sample has been confirmed by estimating the diffuse phase parameter (γ = 1.444 ± 0.003) from the temperature variation dielectric plot. A large adiabatic temperature change (ΔT) of 0.278 K and isothermal entropy change (ΔS) of 0.494 J/kgK have been observed for the sample x = 0.20 (Ba0.8Sr0.2TiO3) at 338 K. The temperature dependent scaling relation for remnant polarization (Pr), coercive field (Ec), and hysteresis area <A> are found to be Pr∝T−1.009,Ec∝T−1.890 and <A>∝T−1.169, respectively. The present comprehensive studies on A-site modified BaTiO3 illustrate the electrocaloric cooling efficiency of this material.

Evolving Differentiated Local Polar Displacement and Relaxor Behavior in Pb(Mg1/3Nb2/3)O3–PbTiO3 Perovskites

Lead-based relaxor ferroelectrics feature exceptional dielectric and electromechanical properties. The inherent local structural inhomogeneity remains poorly characterized and impedes the understanding of their unique electrical behavior. Herein, the local structure of a technologically important 0.75Pb(Mg1/3Nb2/3)O3–0.25PbTiO3 relaxor is studied as a function of temperature, by employing neutron total scattering combined with newly advanced reverse Monte Carlo modeling. The statistical analysis of local cationic polar displacement vectors demonstrates that a prevailing order/disorder feature and strong displacive behavior are observed in Pb and Ti, but both weak components are observed in Nb/Mg. This leads to trifurcated polar behavior across the feature temperatures. Importantly, these distinct cationic polar vectors are correlated and present a microscopic picture, where sporadic correlated orthorhombic polar clusters are embedded in a long-range rhombohedral polar matrix at low temperature. Their fraction extends with increasing temperature, presenting strong ferroelectricity with dielectric relaxation macroscopically. Furthermore, the long-range rhombohedral polar ordering is disrupted by temperature, forming free-oriented polar clusters with reducing electric dipole length, gradually losing their macroscopic polarization, and resulting in a diffuse phase transition behavior. Altogether, this offers a fundamental basis in terms of local polar fluctuations in inferring the nature of the unique properties of relaxor ferroelectrics.

Enhanced dielectric and ferroelectric responses in La3+/Ti4+ co-substituted SrBi2Ta2O9 Aurivillius phase

The molten salt technique was employed to prepare the Aurivillius phases SrBi2Ta2O9 (SBT) and Sr0.9La0.1Bi2Ta1.9Ti0.1O9 (SLBTT). The XRD data and the Le Bail refinement approach demonstrate that both samples formed the double-layer Aurivillius phase with the orthorhombic A21am structure successfully. The SLBTT cell volume is smaller compared to SBT with the substitution of smaller La3+ and Ti4+ ions and the increased size of the plate-like grains. FTIR analysis indicates the two local arrangements of Ti4+ at the B-site to form Ti–O–Ti and Ti–O–Ta bonds. Changes in the structural properties due to La3+ and Ti4+ substitution are reflected in the electrical properties. The higher ferroelectric transition temperature (Tc) of 455°C with the diffused phase transition behavior (DPT) was obtained in SLBTT. The unsaturated hysteresis loop of SLBTT obtained the ferroelectric remnant polarization (Pr) of 0.43 μC/cm2 and the coercive field (Ec) of 110.6 kV/cm, respectively. The enhanced ferroelectric characteristic as well as a higher bandgap (Eg) that is driven by the substitution of variable smaller cations.

Effects of Ga content on the structure and electrical performances of 0.69BiFe1-xGaxO3-0.31BaTiO3 lead-free ceramics

Lead-free 0.69BiFe1-xGaxO3-0.31BaTiO3 (x, 0–0.06) piezoceramics were synthesized via traditional sintering techniques. The phase structure, dielectric, piezoelectric and ferroelectric performances of the ceramics were studied systematically. The results revealed that all the samples locate near MPB of rhombohedral (R)-pseudocubic (pC) phase coexistence, and that Ga doping has distinct influences on the R/pC phase content ratio. An appropriate content of Ga doping favors densification and grains growth of the ceramics during sintering. With the increment of Ga content, the Curie temperature of the samples shifts towards lower temperature owing to increased tolerance factor t of the perovskites, and enhanced diffuse phase transition behavior was observed. In addition, both the piezoelectric and ferroelectric property are sensitive to the concentration of Ga doping. Significantly, the excellent piezoelectric coefficient d33 up to 206 pC/N along with strong remanent polarization Pr of 25 μC/cm2 are obtained in 0.69BiFe0.985Ga0.015O3-0.31BaTiO3 materials which would be a promising substitute for the conventional lead zirconate titanate system ceramics.

Novel non-stoichiometric (Ba0.91Ca0.09)x(Zr0.18Ti0.82)O3 ferroelectric ceramics with improved diffuse phase transition and dielectric tunable performance

Dielectric tunable properties in ferroelectric ceramics have been optimized by a variety of approaches, e.g., isovalent/aliovalent substitution, system composite et al., while the study of non-stoichiometric regulation on the performance of BCZT ceramics was rarely concerned. Herein, a series of novel non-stoichiometric (Ba0·91Ca0.09)x (Zr0·18Ti0.82)O3 (BCZTx) ceramic specimens were successfully prepared via solid-state reaction. The microstructures of BCZTx ceramics are simultaneously investigated through XRD and SEM. The diffuse phase transition (DPT) behaviour of BCZTx ceramics are studied by the Lorentz-type empirical formula. The significant enhancement of DPT behaviour is observed at x = 1.03, which probably due to the coaction of the generation of partial Schottky defects and prominent reduction of grain size. Furthermore, a high tunability (k) 87.80%, low dielectric loss (tan δ) 0.141%, and a remarkably enhanced FOM of 623 are achieved in x = 0.99 at a low DC bias electric fields (BEFs) of 7.28 kV/cm and room temperature (RT), which is superior to that of the stoichiometric BCZT ceramics and other available reported BT-based ceramics systems in term of the dielectric tunable properties. Meanwhile, it shows that the temperature dependent CQF value of x = 0.99 remained advantageous around the RT. These findings suggested that non-stoichiometric BCZTx ceramics with x = 0.99 are significantly competitive in the applications of dielectric tunable devices at RT. The non-stoichiometric regulation is an effective approach in improving the dielectric tunability properties of BCZT ceramics.

A-site substitution induced diffuse phase transition for high tunability in Ba1-xCaxTi0.85Sn0.15O3 thin films with a low bias electric field

We fabricate BaTi0.85Sn0.15O3 thin films with various Ca doping contents on Pt(100)/Ti/SiO2/Si substrates by a sol-gel and spin-coating method to investigate the effects on dielectric tunable properties. The results show that the greater tunability under a low bias electric field can be achieved compared with undoped BaTi0.85Sn0.15O3 thin films. In particular, the 0.1 mol. % Ca-doped BaTi0.85Sn0.15O3 thin films achieve the highest tunability of 50.9% and the highest FOM value of 23.1 at 16 kV/mm, surpassing most values reported previously for the dielectric tunability of BTS thin films. The use of a low bias electric field avoids the need for a high voltage, thus reducing safety hazards. These outstanding properties are attributed to the broadening of the Curie peak near room temperature, which indicates the existence of diffuse ferroelectric phase transition behavior, a larger grain size, and the suppression of electron hopping between Sn2+ and Sn4+. The results show the great potential of Ca-doped BaTi0.85Sn0.15O3 thin films for dielectric tunable applications.

The transition from dielectric-temperature stability to diffuse phase transition behavior induced by the sintering temperature for (Ba0.93La0.07)(Ti0.93Tb0.07)O3 ceramics

Nominal (Ba0.93La0.07)(Ti0.93Tb0.07)O3 ceramics (BLTT7) were prepared at different sintering temperatures of Ts = 1100–1400 °C using a mixed-oxide method. The electron paramagnetic resonance (EPR) of Tb4+ in BLTT7 acted as a probe to investigate the effect of Ts on the transition from dielectric-temperature stability to diffuse phase transition behavior. Three tetragonal BLTT7 ceramics sintered at Ts = 1100, 1200 and 1300 °C exhibited increasing dielectric-temperature stability, whereas the pseudocubic BLTT7 sintered at Ts = 1400 °C exhibited a diffuse phase transition behavior with higher permittivity and the temperature stability. A so-called core-shell structure should be responsible for the flattening of the Curie peak at Ts ≤ 1300 °C. The higher Ts (=1400 °C) led to a complete incorporation of La/Tb ions in the BaTiO3 lattice and the collapse of the core-shell structure. The transfer of Tb4+ from the shell at Ts ≤ 1300 °C to the perovskite lattice at Ts = 1400 °C was confirmed by EPR. The solid solution formation of BLTT7 sintered at different Ts is discussed.

Synthesis, dielectric and ferroelectric properties of BCZTL/BCZTM bilayer ceramics for energy storage applications

(Ba0.85Ca0.15)(Zr0.1Ti0.9)O3–3 wt.%Li2CO3/(Ba0.85Ca0.15)(Zr0.1Ti0.9)O3–3 wt.%MgO (abbreviation as BCZTL/BCZTM) bilayer ceramics are prepared by the conventional solid-state reaction method. A single-perovskite structure and the diffused phase transition behavior are found in the BCZTL/BCZTM bilayer ceramics by XRD and e − T curves. The bilayer ceramics show high energy storage density (Wrec) 258 mJ/cm3 and good energy storage efficiency (η) 82.9%. Moreover, compared with the BCZTL and BCZTM ceramics, the recoverable energy storage density of BCZTL/BCZTM bilayer ceramics has, respectively, increased by 25.8% and 10.7%. And the bilayer ceramics exhibit a good thermostability with a smaller change rate (13.38%) of Wrec. Meanwhile, the energy storage efficiency obviously increases from 84.0% at 20 °C to 91.6% at 100 °C, which indicates that the BCZTL/BCZTM bilayer ceramics have a potential application in energy storage systems.

Diffused phase transition, ionic conduction mechanisms and electric-field dependent ferroelectricity of Nb/Ce co-doped Pb(Zr0.52Ti0.48)O3 ceramics

In this work, polycrystalline ceramics of the Pb(Zr0.52Ti0.48)0.95Nb0.05O3 + 0.2 wt% CeO2 (PZT-NC) compound were fabricated by the conventional solid-state reaction process from oxide precursors. Firstly, XRD analysis and SEM observation associated with EDS mapping were used for characterizing the phase structure, grain morphology and element composition of the specimens, respectively. And then, the temperature dependence of the dielectric properties were studied for the specimens in a wide frequency range of 1 kHz–1 MHz. The diffused phase transition behavior were comprehensively characterized in terms of the modified Curie-Weiss law involved in diffuseness and diffusivity. The dielectric loss mechanisms were explained by space charge conduction and domain wall relaxation. Further, the temperature dependent AC conductivity of the specimens were analyzed at a low frequency of 1 kHz. The electrical conduction mechanisms in three temperature regions: room temperature∼250 °C, 250∼400 °C, and 400∼500 °C, were associated with three different kinds of charge carriers. Finally, the polarization switching properties of the specimens were measured with the applied electric field of 30–50 kV/cm. The linear variation of coercive field, remanent polarization and maximum polarization with the electric-field amplitude demonstrated the field dependent ferroelectricity. As profited from the co-doping effect of Nb/Ce applied in the B-/A-site of the perovskite structure, the PZT-NC ceramics achieved many optimized electrical properties, including a high d33 (443 pC/N) and Tc (312 °C), a large g33 (35 × 10−3 Vm/N) and Pr (∼24 μC/cm2), as well as a low Ec (∼10 kV/cm), which make it possible for prospective applications in piezoelectric/ferroelectric devices.

Temperature-stable MgO-doped BCZT lead-free ceramics with ultra-high energy storage efficiency

Temperature-stable dielectric capacitors with high energy storage properties are increasingly attractive in modern electronic devices. Hence, Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) ceramics with MgO additive were synthesized via the solid-state method. The phase identification of the specimens can be investigated by the XRD analysis and show a pure phase of the perovskite structure. The SEM micrograph reveals that the smallest grain size is found in the x = 0.50 composition. The diffuse phase transition (DPT) behavior of the BCZT ceramics is enhanced by MgO additive, which demonstrates that the MgO additive plays a significant role on the DPT behavior. The highest energy storage density 275.56 mJ/cm3 and excellent energy storage efficiency 91.55% measured at room temperature are noted for the x = 0.50 composition. By further investigating the temperature stability of BCZT-0.5 wt% ceramics, the variation of the energy storage density can be maintained within ±14.18% and the energy storage efficiency has dramatically increased from 92.60% to 97.08% at the operating temperature range of 20–120 °C. It indicates that 0.50 wt% MgO doped BCZT ceramics can stably work over a wide operating temperature range with ultra-high energy storage efficiency.

Dielectric relaxation, impedance spectra, temperature stability and electrical properties of Sr2MnSbO6-modified KNN ceramics

Lead-free (1−x)K0.5Na0.5NbO3-x mol%Sr2MnSbO6 (abbreviated as KNN–xSMS, x = 0, 1 and 2) piezoelectric ceramics were prepared using the conventional solid-state sintering method. The effects of SMS on the microstructure and electrical properties of the KNN ceramics are investigated. 1 mol% SMS can greatly enhance the densification and increase the piezoelectric properties. Higher doping amounts will decrease the grain size and reduce electrical properties. The x = 0 and 1 samples show normal ferroelectric phase transition behavior, while the x = 2 sample exhibits diffuse phase transition behavior. Besides, after doping 1 mol% SMS, the field-induced unipolar strain and the remnant polarization vary less than undoped KNN ceramics in the temperature range of 30–160 °C. Therefore, doping SMS is an effective way to promote the temperature stability and electrical properties of KNN piezoelectric materials.

Phase transition and electrical properties of [(0.935 − x)BNT–0.065BT–xBZT] lead-free piezoelectric ceramics

[(0.935 − x)BNT–0.065BT–xBZT]; BNT–BT–xBZT (with 0 ≤ x(BZT) ≤ 0.10) lead-free piezoelectric ceramics were produced and investigated to find the optimal composition to improve the phase formation, microstructure, dielectric, ferroelectric, and piezoelectric properties. The structure exhibited a co-existing rhombohedral and tetragonal phases for all samples and the tetragonal phase increased with increasing amounts of x(BZT). The microstructure of the samples showed more densely packed grains with an increase in x(BZT). The diffuseness exponent (γ) of the ceramics was between 1.5 and 2.0, indicating that the BNT–BT–xBZT solid solutions had a diffuse phase transition behavior. The change in the P–E loops of the ceramics indicated that the long-range ferroelectric order of the samples was disturbed and created polar nano-regions (PNRs) with increasing x(BZT) content. The polarization hysteresis loop changed from well saturated, typical ferroelectric-like, to the relaxor state with increasing x(BZT) content. The addition of x(BZT) content significantly enhanced the field-induced strain in BNT–BT–xBZT ceramics. The largest Smax of 0.17% corresponded to a high-field effective d33* of 283 pm/V, which was found in the composition of 0.875BNT–0.065BT–0.060BZT.

Electrical Properties of Ba0.96Ca0.04Ti0.90Sn0.10O₃ Lead-Free Ceramics with the Addition of Nano-CeO₂.

Well dispersed CeO₂ nanoparticles are prepared by azeotropic co-precipitation method. (Ba0.96Ca0.04)(Ti0.90Sn0.10)O₃ lead-free piezoelectric ceramics doped with nano-CeO₂ (x =0 mol%, 0.03 mol%, and 0.07 mol%) and micro-CeO₂ (x = 0.03 mol%) are prepared at 1430 °C for 2 h by the conventional solid state sintering method. XRD diffraction indicates that all components have typical perovskite structure. Both doping of nano-CeO₂ and micro-CeO₂ can inhibit grain growth. And the average grain size decreased apparently with the increase of nano-CeO₂ amount. All the samples exhibit typical diffuse phase transition behavior. The optimized electrical performances are obtained at x = 0.03 mol% with d33 = 512 pC/N, kp = 41.5%, and Pr = 14.00 μC/cm².

Large electrostrictive effect in Mn-doped BCZT ferroelectric ceramics

The electric field in ferroelectric ceramics can induce notable deformations or strains based mainly on the electrostrictive effect if the driving field is sufficiently large (normally larger than the coercive field). Therefore, a large electrostrictive effect is highly desired to achieve a high strain output. In the present work, 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (BCZT50) ferroelectric ceramics doped with different numbers of Mn ions were synthesized and their dielectric and ferroelectric properties were studied to comprehensively evaluate the electrostrictive effect in this system. The doping levels were set as 0.0025, 0.005, 0.01, and 0.02. It was found that Mn ions could lower the temperature corresponding to the maximum permittivity, Tm, drastically and induce diffuse phase-transition behaviors simultaneously. Most importantly, a purely electrostrictive effect with a longitudinal electrostrictive coefficient, Q33, as large as 0.0466 m4/C2 was observed between 22 and 80 °C. The Q33 of Mn-doped BCZT50 ceramics is much higher than some representative lead-based and lead-free ferroelectric ceramics. In this paper, a potential lead-free ferroelectric system with a large electrostrictive effect, which has potential applications in electrostrictive actuators, is reported.

Microstructures and dielectric properties of (Na0.5Bi0.5)0.775Ba0.225Ti0.775Sn0.225O3 relaxor ferroelectric with Bi2O3–B2O3–ZnO glass addition

To further manipulate the dielectric properties of (Na0.5Bi0.5)0.775Ba0.225Ti0.775Sn0.225O3 ceramics, (Na0.5Bi0.5)0.775Ba0.225Ti0.775Sn0.225O3 − x wt% Bi2O3–B2O3–ZnO (BBZ) ceramics were prepared via a conventional solid state reaction method, whilst the effect of BBZ glass content on dielectric and ferroelectric properties was investigated. In XRD patterns, the minimal secondary phase of Zn3(BO3)2 can be detected in these compounds when x > 5. With the addition of BBZ glass, diffuse phase transition behavior (DPT) and the high temperature stability of permittivity were enhanced. When x = 7, a high permittivity of 1600 ± 15%, from ~ 50 to ~ 475 °C was obtained. Additionally, a high Wd of 1.4 J/cm3 and 𝜂 of 75.5% (measured at 150 kV/cm) were achieved due to the enhanced Pm of 24 μC/cm2. This work demonstrated that the study on (Na0.5Bi0.5)0.775Ba0.225Ti0.775Sn0.225O3 ceramics with BBZ glass addition providing an adequate strategy to enhance Pm.