X-ray diffraction patterns have been measured for pseudomorphic In x Ga 1− x As/GaAs quantum well (QW) structures of widths 183, 121 and 61 ∢, and composition x of about 0.28 grown by molecular beam epitaxy. The measured patterns show Pendellösung fringes due to the 513 ∢ GaAs barriers. These Pendellösung fringes are modulated by a broad weak peak mostly coming from the 183 Å In x Ga 1− x As well layer. The X-ray diffraction fringe modulating patterns between 32° and 33° are fairly symmetric for a non-interrupted growth procedure. The diffraction pattern for the same structures with interrupted growth is less symmetric, since there is further modulation by another weaker peak. This shows that the In x Ga 1− x As well layers have less well controlled In composition if grown with interruption times of tens of seconds at each interface. The thickest In x Ga 1− x As well layer exhibits the highest In composition. Layer thickness and In composition in thin layers (around 100 ∢ in the thickness) can be estimated by X-ray modeling and good agreement obtained between the measured and the calculated X-ray diffraction patterns.
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