Differential Injection-locked Frequency Divider Research Articles

Coupled Dual LC Tanks Based ILFD With Low Injection Power and Compact Size

This letter presents a fully differential injection locked frequency divider using coupled dual LC tanks. The proposed injection locked frequency divide-by-2 divider achieves a wide locking range with low injected power levels. The divider, fabricated in 0.18 μm SiGe BiCMOS process achieves a locking range of 3.77 GHz with an injected power as low as -16 dBm, a phase noise of -116 dBc/Hz at 10 kHz offset with an input referred phase noise of -109.7 dBc/Hz at 10 kHz offset at 25 GHz, maximum output power of -2.44 dBm, efficiency of 18.5% and the dc power consumption is 4.8 mW.

A low-power differential injection-locked frequency divider with output power flatness in 0.5 μm E/D-mode GaAs PHEMT

This study implemented an injection-locked frequency divider (ILFD) on Ka-band millimeter-wave communication systems in 0.5μm enhancement/depletion-mode (E/D-mode) GaAs PHEMT technology. The ILFD presents a low-power design based on the differential-injection circuit topology without using any injectors. Compared with the conventional single-injection ILFD circuits, the proposed ILFD exhibits output power flatness and wide locking range characteristics with a power consumption of 0.9mW under a 0.4V supply. The self-oscillation frequency was chosen to be 20GHz for divided-by-2 operation. The measured locking range is approximately 11.5GHz ranging from 32.5GHz to 44GHz when the injection power level is 5dBm. The locking range exhibiting a 3dB power roll-off characteristic at output is 10.5GHz ranging from 33GHz to 42.5GHz.

A Parallel Coupled QVCO and Differential Injection-Locked Frequency Divider in 0.13 μm CMOS

A fully integrated parallel-coupled 6-㎓ quadrature voltage-controlled oscillator (QVCO) has been designed. Thesymmetrical parallel-coupled quadrature VCO is implemented using 0.13-㎛ CMOS process. The measured phase noise is ?101.05 ㏈c/㎐ at an offset frequency of 1 ㎒. The tuning range of 710 ㎒ is achieved with a control voltage ranging from 0.3 to 1.4 V. The average output phase error is about 1.26° including cables and connectors. The QVCO dissipates 10 ㎃ including buffer from the 1.5 V supply voltage. The output characteristic of the differential injection-locked frequency divider (DILFD), which has similar topology to the QVCO, is presented.

A Wide-Tunable LC-Based Voltage-Controlled Oscillator Using a Divide-by-N Injection-Locked Frequency Divider

This paper proposes a novel wideband voltage-controlled oscillator (VCO) for multi-band transceivers. The proposed oscillator has a core VCO and a tuning-range extension circuit, which consists of an injection-locked frequency divider (ILFD) and flip flop dividers. The two-stage differential ILFD generates quadrature outputs and realizes two, three, four, and six of divide ratio with very wide output frequency range. The proposed circuit is implemented by using a 90 nm CMOS process, and the chip area is 250 x 200 μm 2 . The measured result achieves continuous frequency tuning range of 9.3 MHz-to-5.7 GHz (199%) with ―210 dBc/Hz of figure-of-merit (FoM T ).

Superharmonic injection-locked frequency dividers

Injection-locked oscillators (ILOs) are investigated in a new theoretical approach. A first-order differential equation is derived for the noise dynamics of ILOs. A single-ended injection-locked frequency divider (SILFD) is designed in a 0.5-/spl mu/m CMOS technology operating at 1.8 GHz with more than 190 MHz locking range while consuming 3 mW of power. A differential injection-locked frequency divider (DILFD) is designed in a 0.5-/spl mu/m CMOS technology operating at 3 GHz and consuming 0.45 mW, with a 190 MHz locking range. A locking range of 370 MHz is achieved for the DILFD when the power consumption is increased to 1.2 mW.