In this paper we study the process of using PECVD to obtain SiNx films, which serve as a dielectric passivation layers for AlGaN/GaN structures. Aim of this study was to determine the methods of controlling the properties of the films. The deposition of SiNx films was carried out in a Plasmalab System 100 ICP180 featuring an ICP source, which makes possible to form a high-density plasma without a significant increase in ion bombardment of substrates, and to use nitrogen instead of ammonia as one of the precursors, which reduces the hydrogen concentration in the film. The deposition of SiNx films was carried out in different modes in order to determine the influence of various deposition parameters on the shift of C-V characteristics, and to either eliminate the shift or make it positive. It was shown that this goal can be achieved by significantly increasing the nitrogen flow into the chamber during the deposition of SiNx films.
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