Diameter Silicon Substrates Research Articles

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

Germanium tin (GeSn) is a material of interest for electronic and photonic device applications, but its development and commercialization have been limited by material quality issues and lack of availability from epitaxy suppliers. In this paper, we report initial studies in optimizing GeSn films deposited on a Ge buffer layer grown on 200-mm diameter silicon (Si) substrates with an ASM Epsilon 2000 chemical vapor deposition reactor designed for commercial production. Using a single-step growth process, a Sn content up to 22% near the surface of a GeSn film was achieved due to the increase in Sn incorporation via strain relaxation. A two-step growth process resulted in a bilayer structure with a nearly 100% relaxation on the first layer, followed by a higher quality GeSn layer with 18% Sn as evident by a high photoluminescence intensity emitting in the mid-wave infrared region at 3.2 μm at 20 K.

Microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor layers on 200 mm Si(111) substrates

Realization of high crystal quality GaN layers on silicon substrates requires a great control over epitaxy as well as detailed characterization of the buried defects and propagating dislocations within the epilayers. In this Letter, we present the microstructural characterization of AlxGa1−xN/GaN high electron mobility transistor (HEMT) structures epitaxially grown on 200 mm Si (111) substrates with superlattice (SL) buffers. The HEMT stack is also composed of an intermediate thick AlxGa1−xN layer sandwiched between the short-period and long-period AlxGa1−xN/AlN SLs. Structural and morphological characteristics of the GaN-based epilayers are studied to assess the quality of the HEMT stack grown on such 200 mm diameter substrates. The detailed microstructural uniformity of the epilayers is addressed by the transmission electron microscopy (TEM) technique. In depth scanning TEM with electron energy loss spectroscopy (EELS) investigations have been carried out to probe the microstructural quality of the HEMT stack comprising of such short- and long-period AlxGa1−xN/AlN SLs. The EELS-plasmon maps are utilized to address the sharp interface characteristics of the SL layers as well as the top active p-GaN/AlxGa1−xN/GaN layers. This work highlights the capability of high-resolution TEM as a complementing characterization method to produce reliable AlxGa1−xN/GaN HEMTs on such a large diameter silicon substrate.

Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

Mass production-ready technologies of AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structures on 200 mm diameter silicon substrates are developed using a large-scale metal-organic chemical vapor deposition system. High-yield epitaxial substrates on large-diameter wafers are required for reducing the cost of industrializing power device applications. Through multi-point vertical leakage current measurements, it was confirmed that the AlGaN/AlN/GaN HEMT, under optimum growth conditions, showed high yield characteristics such as a highly uniform leakage current and a low number of breaking points over the entire 200 mm diameter wafer. On introducing an AlN spacer layer between the AlGaN Schottky barrier and the GaN channel, a lower on-state resistance for power devices can be expected. Cross-sectional transmission electron microscopy images revealed that the thin AlN spacer layer was grown between the AlGaN and GaN layers with atomically abrupt and flat interfaces. HEMT structures with an AlN spacer layer exhibited a considerably high two-dimensional-electron-gas mobility of 2000 cm2 V−1 s−1 at room temperature and 10 700 cm2 V−1 s−1 at 77 K. The AlN spacer layer between the AlGaN and GaN layers was successfully fabricated and suppressed the alloy disorder scattering effect.

Nanoscale spatial limitations of large-area substrate conformal imprint lithography

We demonstrate a soft-imprint nanofabrication technique offering nanometer resolution over an area as large as a 150 mm diameter wafer. It makes use of a composite imprint stamp composed of a quaternary siloxane-modified poly-di-methyl-siloxane patterned rubber layer with a relatively high Young’s modulus that is laminated on a thin glass support. The in-plane stiffness of the stamp avoids pattern deformation over large areas, while out-of-plane flexibility allows conformal contact to be made over the entire substrate area. The stamp is used in conjunction with a novel tetra-methyl-ortho-siloxane/methyl-tri-methoxy-siloxane sol-gel imprint resist material developed to replicate nanoscale features in rigid silica at room temperature. We demonstrate better than 10 nm resolution in imprinted line gratings and individual pillars with aspect ratio as high as 5:1. Gaps as small as 6 nm can be reproduced. The patterns can be used as an etch mask to pattern 150 mm diameter silicon and quartz substrates while maintaining sub-10 nm resolution.

Fundamentals towards large area synthesis of multifunctional Ultrananocrystalline diamond films via large area hot filament chemical vapor deposition bias enhanced nucleation/bias enhanced growth for fabrication of broad range of multifunctional devices

This paper describes studies to develop hot filament chemical vapor deposition (HFCVD)/Bias Enhance Nucleation-Bias Enhance Growth (BEN-BEG) process for nucleation/grow of relatively large area uniform multifunctional ultrananocrystalline diamond (UNCD) films on tungsten (W)-coated 100mm diameter silicon substrates, eliminating conventional wet diamond particles “seeding” of substrate surfaces. The HFCVD/BEN-BEG process generates a plasma, via electric field between positively bias filaments against negative substrates, producing positively charged and neutral Ar, CHx (x=1 2 3), C and H species and electrons in an Ar-rich/CH4/H2 gas mixture. The C+-based ions impacting the substrate surface nucleate a W-carbide layer, resulting in nucleation/growth of uniform UNCD films. The studies focused on understanding the HFCVD BEN-BEG mechanism for 0.5–2.5hrs. BEN, followed by no-bias 2.0hrs. growth of uniform UNCD films on 100mm diameter substrates. This approach eliminates the etching of UNCD films observed when doing BEG beyond 2.5hrs. of BEN, due to ion bombardment-induced sputtering and/or combined atomic hydrogen-induced chemical etching of the films. High Resolution Transmission Electron Microscopy showed formation of (001) and (101) oriented WC grains, inducing (111) diamond grains formations, turning into (220) and (311) orientation upon further growth. Large area HFCVD BEN-BEG process to grow multifunctional UNCD films may enable new generations of UNCD-based multifunctional devices.

Numerical evaluation of silicon epitaxial growth on a 450 mm diameter substrate

Silicon epitaxial growth on a 450 mm diameter silicon substrate and the related transport phenomena in a trichlorosilane-hydrogen system were numerically evaluated. In order to minimize the gas species transport distance, the single-wafer high-speed rotation vertical epitaxial reactor was studied assuming the future conditions and geometry. The edge of the large diameter substrate moves very quickly and induces a horizontal gas flow. The temperature gradient near the substrate surface significantly increases with the substrate rotation rate. The induced gas flow forms a thin boundary layer for effectively transporting the gas species to the substrate surface. A uniform film thickness profile is produced, consuming a high amount of trichlorosilane by the large substrate surface.

Ultra uniform arrays of micro patterns on large area substrate by employing wet chemical etching

A wet chemical selective etching process is presented to delineate ultra-uniform micro patterns in the form of arrays of sensor chips of 4mm×4mm size in the matrix of 9×9 on a 3″ diameter silicon substrate with uniform physical and electrical characteristics. The selective etching of thin film is confined to the top area by masking its outer edges. This leads to uniform etching of the entire film leading to ultra-uniform delineation of arrays of micro patterns. The process has been verified over the selective etching of doped polysilicon in defining the polysilicon resistors and subsequently has been applied on realizing Ti/Au interconnecting lines using wet chemical etchant. Experimental results are presented with physical and electrical characteristics of the patterned structures in the statistical form over the substrate surface. SEM analysis is carried out for physical dimension measurement and standard deviation of 0.0040 is observed in polysilicon micro patterning. The process is competitive with reactive ion etching (RIE) in terms of yield, reliability and repeatability with cost effectiveness in a production environment. Methodology of ultra-uniform etching on entire substrate area is developed in support of the experimental results. The ratio of Top Surface Area (TSA) and Total Exposed Surface Area (TESA) is shown as crucial parameter for the uniform etching of thin films.

Invited: Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm

1. Introduction As Si-CMOS scaling is becoming increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving an increasing interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.III-V integration on Si by direct wafer bonding is considered as one of the possible paths towards this objective [3]. Our rationale is that (1) InGaAs-on-insulator can be fabricated with the appropriate critical dimensions and thermal stability, (2) source wafers can be fabricated on large diameter wafers with acceptable defect densities and (3) hybrid substrates can be used to fabricate simple CMOS circuits. 2. InGaAs-on-Insulator A possible fabrication path for InGaAs-On-Insulator substrate is summarized. For demonstration purposes, the source substrate can simply be etched. A manufacturable process will however rely on the H-induced thermal splitting, as demonstrated in [3]. For thin layers as required for advanced CMOS, the thickness of InGaAs-o-I is below the critical value determined by the thermal strain up to 600°C. In addition, the interface energy at the Al2O3-Si bonding interface is almost 1 J/m2, larger than the one determined for SiO2-Si bonding in SOI wafers [4]. Such structures can therefore undergo high temperature processes such as the regrowth of highly doped InGaAs source and drain. The thermal stability is illustrated by showing that the regrowth of InGaAs do not degrade the structural quality of the underlying ultra-thin InGaAs-o-I. Functional self-aligned devices have been processed down to short gate length Lg=24nm, demonstrating the stability of such structures [5]. 2. Large diameter source wafer For VLSI integration, the bonding flow must be available for large diameters. As no InP substrate is available above 4”, the only possibility is to grow a virtual donor wafer onto a large diameter silicon substrate. Low defect density as well as very low roughness is required. In our internal work, GaAs deposition is performed by MBE on 200mm Ge/Si (001) substrate 6° off-cut, and subsequent pseudomorphic InxAl1-xAs grading buffer (x~ 0-0.65) allows reaching InP lattice-matching conditions. The formation of a thin InGaAs active layer completes the heterostructure that is compatible with the direct wafer bonding process. The best rms/TDD values reported so far are for GaAs 1nm/low-107cm-2 , and for InGaAs 2nm/mid-108cm-2. , close to the best value reported so far for Aspect Ratio Trapping methods. Excellent device metrics have been obtained on such heterostructures, supporting the idea that they can be used as donor wafers. 3. Hybrid circuits Based on the previous results, the co-integration of fully depleted InGaAs and SiGe MOSFETs can be envisioned. Starting from an 8 nm thick ETSGOI wafer, a 6 nm thick InGaAs layer can be transferred as in [6]. Because of the low temperature used during wafer bonding, and due to the presence of the BOX, cross-diffusion between InGaAs and SiGe is inhibited. The n- and p- active regions are defined based on mesa definition in the InGaAs and SiGe layer. The rest of the process follows an ETSOI-like front-end where n- and p-FETs are processed simultaneously. Such an hybrid structure is shown, for which a simplified process has been utilized, including a common gate stack and metal source drain instead of raised source/drain. The device characteristics have been extensively reported in [6], and a typical inverter transfer characteristic has been obtained, leading to the first demonstration of hybrid CMOS circuits based on high mobility channels.[1] J. Lin, D. A. Antoniadis and J. A. Del Alamo, IEDM Tech. Dig. (2012)[2] M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J. M. Fastenau, S. Kabehie, J. Kavalieros, V. Le, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, H. W. Then and Robert Chau, IEDM Tech. Dig. (2011)[3] L. Czornomaz, N. Daix, D. Caimi, M, Sousa, R. Erni, M. D. Rossell, M. El-Kazzi, C. Rossel, C. Marchiori, E. Uccelli, M. Richter, H. Siegwart and J. Fompeyrine, IEDM Tech. Dig. (2012)[4] N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa and J. Fompeyrine, S3S conference 2013[5] L. Czornomaz, et al., Proc. ESSDERC 2013[6] L. Czornomaz, et al., IEDM Tech Digest (2013)

A dome-shaped cavity type microwave plasma chemical vapor deposition reactor for diamond films deposition

In this paper, a new type of microwave plasma chemical vapor deposition (MPCVD) reactor possessing a novel dome-shaped resonant cavity is described. Such a MPCVD reactor is required for efficient preparation of diamond films. It will be shown that by adopting a design outlined in this paper, a MPCVD reactor fulfilling all different requirements for reliable, long-time operation at high input microwave power levels could be optimized. Experimental results will be given showing that with the new MPCVD reactor, an input microwave power of up to 10 kW at 2.45 GHz could be applied, and at an input power of 8.5 kW, uniform and transparent polycrystalline diamond film of high quality and high purity could be deposited on 2 inch diameter silicon substrates, at a deposition rate of about 3.5 μm/h.

Characterizations of microwave plasma CVD grown polycrystalline diamond coatings for advanced technological applications

Polycrystalline diamond (PCD) coatings ranging from few microns to several hundred microns thickness have been grown by 915MHz microwave plasma reactor with 9000W power. The coatings were deposited on 100mm diameter silicon (Si) substrate from few hours to several days of continuous runs. PCD coatings were made freestanding by wet chemical etching technique. The deposited PCDs were evaluated by X-ray diffraction (XRD), scanning electronmicroscopy (SEM), Raman spectroscopy,X-ray photoelectron spectroscopy (XPS) for physical characterization and compared with authors? earlier work. Refractive index of 2.41 was obtained at 633 nm wavelength and a maximum of 6.6 W?cm-1K-1 value for thermal conductivity could be achieved with the grown coatings. The values are well above the existing non-diamond heat spreading substrates, which makes the grown PCDs as candidates for heat spreaders in different technological applications. High refractive in- dex along with translucent nature of the white freestanding PCDs, make them potential candidate for optical windows.

A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films

With the aid of numerical simulation, a novel microwave plasma reactor for diamond films deposition has been designed. The new reactor possesses a unique structure, neither purely cylindrical nor purely ellipsoidal, but a combination of the both. In this paper, the design strategy of the new reactor together with a simple but reliable phenomenological simulation method will be described. Preliminary experiments show that uniform diamond films of high quality could be deposited using the new reactor, and the deposition rate of diamond films is typically about 3 μm/h at 6 kW input power level on a 2 inch diameter silicon substrate. • The proposed microwave plasma reactor has a novel structure, which is the combination of cylinder and ellipsoid. • A simple but effective simulation method is established to design the microwave plasma reactor. • An ingenious design has been adopted to solve the problem of parasitic plasma, which has not been reported before. • The results of both simulation and experiments show a good performance of the newly designed reactor.

Large Area Deposition of Polycrystalline Diamond Coatings by Microwave Plasma CVD

Polycrystalline diamond (PCD) films have been grown over 100 mm diameter silicon (100) substrate, using microwave plasma chemical vapour deposition (MPCVD) technique. The deposition was carried out inside a 15 cm diameter quartz chamber with microwave power of 15 kW at 915 MHz frequency. Uniform substrate surface temperature of 1050°C with plasma heating was maintained with simultaneous cooling arrangement. The pressure was 110 Torr and the microwave incident power was 8.5 kW. Temperature uniformity and plasma geometry over the substrate are the key parameters for producing uniformly thick MPCVD diamond films of high quality. Thickness uniformity of as-deposited films is ±10% across 100 mm diameters with a growth rate of 1 µm.h–1. The grown PCD was characterized by X-ray diffractometry (XRD), Raman spectrometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), transmission electron microscopy (TEM) and bright field imaging technique. Experimental results indicate columnar growth of a very densely crystalline PCD with (111) facets of high quality morphology.

Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate

We demonstrate the growth of 4.5 μm thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For strain engineering an aluminum nitride buffer and several interlayers were applied. The realized gallium nitride layer-stack is crack-free. Several characterization methods were applied to study the crystalline quality. In X-ray diffraction measurements the full width at half maximum of the (0 0 2) reflection was found to be as low as 400″, whereas the (2 0 1) reflection showed a full width at half maximum of 580″. For verification transmission electron microscopy examinations were performed to determine the structural quality. A comparison to gallium nitride, grown on sapphire, is made.

Improved microwave plasma cavity reactor for diamond synthesis at high-pressure and high power density

Microwave plasma assisted synthesis of diamond is experimentally investigated using high purity, 2–5% CH 4/H 2 input gas chemistries and operating at high pressures of 180–240 Torr. A microwave cavity plasma reactor (MCPR) was specifically modified to be experimentally adjustable and to enable operation with high input microwave plasma absorbed power densities within the high-pressure regime. The modified reactor produced intense microwave discharges with variable absorbed power densities of 150–475 W/cm 3 and allowed the control of the discharge position, size, and shape thereby enabling process optimization. Uniform polycrystalline diamond films were synthesized on 2.54 cm diameter silicon substrates at substrate temperatures of 950–1150 °C. Thick, freestanding diamond films were synthesized and optical measurements indicated that high, optical-quality diamond films were produced. The deposition rates varied between 3 and 21 μm/h and increased as the operating pressure and the methane concentrations increased and were two to three times higher than deposition rates achieved with the MCPR operating with equivalent input methane concentrations and at lower pressures (≤ 140 Torr) and power densities.

Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films

Nanocrystalline diamond (NCD) films are being intensively researched for a variety of potential applications, such as optical windows, electrochemical electrodes, and electron emitting surfaces for field emission displays. In this study Zr, Ti, Cu, and Pt on intrinsic and lightly sulfur-doped (n-type) NCD films were electrically and photoelectrically characterized. Intrinsic and sulfur-doped NCD films were synthesized on 1in. diameter quartz and silicon substrates by microwave plasma assisted chemical vapor deposition. All metals showed linear (Ohmic) current-voltage characteristics in the as-deposited state. The Schottky barrier heights (ΦB) at the metal-film interface were investigated using x-ray and ultraviolet photoelectron spectroscopies. The undoped NCD films exhibited a negative electron affinity and a band gap of 5.0±0.4eV. The ΦB were calculated based on this band gap measurement and the consistent indication from Hall measurements that the films are n-type. The ΦB values were calculated from shifts in the core-level (C1s) peaks immediately obtained before and after in situ, successive metal depositions. The ΦB values for Zr, Ti, and Pt on undoped films were calculated to be 3.3, 3.2, and 3.7eV, respectively. The S-doped films also showed increasing ΦB with metal work functions: 3.0, 3.1, and 3.4eV for Zr, Ti, and Pt, respectively. In general accordance with the barrier height trends, the specific contact resistivity (ρc) values increased with the metal work functions for both undoped and S-doped films. For the undoped films ρc increased from 3×10−5Ωcm2 for Zr to 6.4×10−3Ωcm2 for Pt. The ρc values for the S-doped films were approximately two orders of magnitude lower than those for the undoped films: 3.5×10−7–4.5×10−5Ωcm2 for Zr and Pt, respectively. The Hall-effect measurements indicated that the average sheet resistivity and carrier concentration values were 0.16 and 3.5×1018cm−3 for the undoped films and 0.15Ωcm and 4.9×1019cm−3 for the S-doped films.

In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation

SiN films were grown by molecular beam epitaxy using an electron beam heated silicon rod and a nitrogen rf plasma. The silicon source mounts on a standard furnace flange with the conventional source-substrate geometry. Films were grown under nitrogen-rich conditions and were resistive with refractive indexes close to 2.0. SiN growth rates over 600A∕h were achieved. The uniformity of films deposited on 4in. diameter silicon substrates had thickness and refractive index variations less than 1%. The films contained less than 0.5% hydrogen content and exhibited low etch rates in buffered HF. SiN films deposited on silicon substrates were under a compressive stress of (0.7–1.4)×109N∕m2.

A titer plate-based polymer microfluidic platform for high throughput nucleic acid purification

A 96-well solid-phase reversible immobilization (SPRI) reactor plate was designed to demonstrate functional titer plate-based microfluidic platforms. Nickel, large area mold inserts were fabricated using an SU-8 based, UV-LIGA technique on 150 mm diameter silicon substrates. Prior to UV exposure, the prebaked SU-8 resist was flycut to reduce the total thickness variation to less than 5 mum. Excellent UV lithography results, with highly vertical sidewalls, were obtained in the SU-8 by using an UV filter to remove high absorbance wavelengths below 350 nm. Overplating of nickel in the SU-8 patterns produced high quality, high precision, metal mold inserts, which were used to replicate titer plate-based SPRI reactors using hot embossing of polycarbonate (PC). Optimized molding conditions yielded good feature replication fidelity and feature location integrity over the entire surface area. Thermal fusion bonding of the molded PC chips at 150 degrees C resulted in leak-free sealing, which was verified in leakage tests using a fluorescent dye. The assembled SPRI reactor was used for simple, fast purification of genomic DNA from whole cell lysates of several bacterial species, which was verified by PCR amplification of the purified genomic DNA.

Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications

This paper explores the development of high-temperature pressure sensors based on polycrystalline and single-crystalline 3C-SiC piezoresistors and fabricated by bulk micromachining the underlying 100-mm diameter (100) silicon substrate. In one embodiment, phosphorus-doped APCVD polycrystalline 3C-SiC (poly-SiC) was used for the piezoresistors and sensor diaphragm, with LPCVD silicon nitride employed to electrically isolate the piezoresistor from the diaphragm. These piezoresistors fabricated from poly-SiC films deposited at different temperatures and doping levels were characterized, showing -2.1 as the best gauge factor and exhibited a sensitivities up to 20.9-mV/V*psi at room temperature. In a second embodiment, epitaxially-grown unintentionally nitrogen-doped single-crystalline 3C-SiC piezoresistors were fabricated on silicon diaphragms, with thermally grown silicon dioxide employed for the piezoresistor electrical isolation from the diaphragm. The associated 3C-SiC/SiO/sub 2//Si substrate was fabricated by bonding a (100) silicon wafer carrying the 3C-SiC onto a silicon wafer with thermal oxide covering its surface. The 3C-SiC handle wafer was then etched away in KOH. The diaphragm was fabricated by time etching the silicon substrate. The sensors were tested at temperatures up to 400/spl deg/C and exhibited a sensitivity of 177.6-mV/V*psi at room temperature and 63.1-mV/V*psi at 400/spl deg/C. The estimated longitudinal gauge factor of 3C-SiC piezoresistors along the [100] direction was estimated at about -18 at room temperature and -7 at 400/spl deg/C.

Synthesis of thick, uniform, smooth ultrananocrystalline diamond films by microwave plasma-assisted chemical vapor deposition

The deposition of uniform, low-stress, thick and thin films of ultrananocrystalline diamond (UNCD) is investigated. The process methods and apparatus that enable the uniform and smooth deposition of both thin and thick (> 50 μm) UNCD across 3 in. diameters are described. UNCD films are synthesized by microwave plasma-assisted CVD using Ar/H 2/CH 4 input gas mixtures over a wide pressure range (60–240 Torr) and temperature range (400–850 °C). Films were grown on 3 in. diameter silicon substrates with thicknesses ranging from 58 nm to greater than 50 μm. Film surface roughness as low as 10 nm (AFM) was obtained. Film uniformities of 70 to over 95% were achieved on 3 in. diameter silicon substrates. The growth rate increased as pressure, percent hydrogen and percent methane in the gas mixture, and microwave power increased. The highest growth rate 1.12 μm/h was achieved at 180 Torr, H 2/Ar/CH 4 = (4:100:2) sccm and 1.5 kW absorbed power. Overall, a robust, repeatable process has been demonstrated for the deposition of UNCD films.

Technology Development of Super large diameter silicon substrates (φ400mm) at the Super Silicon Research Institute Corp. Japan : The Significance of a Government - Private Joint Research Consortium

Technology Development of Super large diameter silicon substrates (φ400mm) at the Super Silicon Research Institute Corp. Japan : The Significance of a Government - Private Joint Research Consortium