DH Injection Research Articles

Danhong Promotes Angiogenesis in Diabetic Mice after Critical Limb Ischemia by Activation of CSE-H 2 S-VEGF Axis.

The aim of this paper is to investigate effect and mechanism of Danhong injection (DH) on angiogenesis in the diabetic hind limb ischemia mouse model. Thirty diabetic hind limb ischemic model mice and ten normal mice, established by intraperitoneal (i.p.) injection of streptozotocin (STZ) or PBS and ligation/excision of femoral artery, and then twenty diabetic hind limb ischemic model mice of all were evenly randomized to saline (control, n = 10) and DH i.p. injection (2 mL/kg weight for 7 days, n = 10) groups. Limb perfusion recovery and femoral blood hydrogen sulfide (H2S) and vessel regeneration and lower limb vascular endothelial growth factor (VEGF)/cystathionine γ-lyase (CSE) expression were evaluated during intervention and after euthanasia, respectively. DH i.p. increased ischemic limb perfusion and promoted collateral circulation generation without decreasing blood glucose level. Increased local CSE-H2S-VEGF expression contributed to beneficial effects of DH injection. In conclusion, activation of local CSE-H2S-VEGF axis might participate in proangiogenesis effects of DH injection in diabetic hind limb ischemia model mice, suggesting a potential therapy for diabetic patients with critical limb ischemia.

GW24-e1001 Effects of advanced glycation end products on function and angiogenesis of adipose tissue-derived stem cells and protective effects of Danhong injection

ObjectivesTo investigate the effects of Nε-(carboxymethyl) Lysine albumin (CMLs), a primary advanced glycation end products isoform in diabetic body, on function and angiogenesis of adipose tissue-derived stem cells (ADSCs) and...

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. To our knowledge, this value is the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

Subpicosecond pulse generation by a tandem-type AlGaAs DH laser with colliding pulse mode locking

Experimental results of colliding pulse mode locking (CPM) of a double-contact AlGaAs DH injection laser with an external cavity are presented. The laser has two amplifying sections and a passive umpumped segment located between them which exhibited saturable absorption action. Ultrashort pulses propagating in opposite directions collided in the absorber and pulse shortening occurred. Bursts of 0.8 ps (FWHM) pulses at a 710 MHz repetition rate are obtained by means of CPM. The pulse duration is measured by a second harmonic generation correlation method and an ultrafast streak camera.

Molecular Beam Epitaxy of III-V Compounds: Application of MBE-Grown Films

The performance of devices fabricated from materials grown by molecular beam epitaxy (MBE) can ideally be used to judge this new film growth technique. From the beginning, microwave and optoelectronic devices have been fabricated from MBE-grown GaAs and AlxGa1_xAs. Initially this work was done mainly at Bell Telephone Laboratories. Fabrication and performance of various devices obtained from MBE material were summarized in excellent reviews by Cho & Arthur (1) and by Cho (2). In the first decade, emphasis was on the MBE production of standard device structures exhibiting characteristics comparable with or even superior to those fabricated by the more conventional growth and processing techniques. Excellent results were obtained for MBE-grown GaAs devices including varactor diodes (3-5), mixer diodes (5, 6-9), IMPATT diodes (10), Gunn diodes (11), MESFETs (12-17), optical waveguides (18-23), and DH injection lasers (24-46). The unique features of MBE have been further applied to more complex device structures involving novel processing steps such as lateral dimensional control as well as metal-semiconductor and oxide-semiconductor heterojunction formation in a single growth cycle. The limits of the MBE technique for the production of novel device structures have not yet been reached.

Epitaxial AlGaAsSbGaSb (AlGaSb) heterostructures for injection lasers

AbstractA possibility is shown of obtaining nearly perfect heterojunctions in the GaAlAsSb—GaAlSb system which do not contain any remarkable density of lattice mismatch defects at the heteroboundaries. Application to low threshold DH injection lasers for 1.4–1.8 μm spectral region for optical communications, moist‐o‐graphs etc.

Beam scanning with twin-stripe injection lasers

Angular scanning of the far-field intensity peak of a GaAs/GaAlAs DH injection laser is demonstrated. This scan is accomplished by adjusting the current levels between two closely space stripe contacts, thereby creating an asymmetric gain/refractive index profile through which the laser beam propagates. Thus, this effect is somewhat analogous to passing the laser beam through a wedge. A deflection of the peak laser beam intensity of ±14° along the p-n junction plane is observed.

Physical mechanisms of carrier leakage in DH injection lasers

The physical mechanisms of the breakdown of carrier confinement are considered using both the thermionic-emission and diffusion models. It is shown that, for most practical AlGaAs/GaAs DH lasers, the diffusion current is responsible for carrier leakage. The thermionic emission of minority carriers is important when the confinement barrier or the mobility is very large. The theory presented here is also applicable to structures other than the AlGaAs/GaAs laser.

Lateral mode selection in semiconductor injection lasers

Various methods have been used to control the lateral modes of injection lasers. We report on lateral mode selection in continuous-wave double-heterojunction lasers using the differential diffraction losses of different modes at a narrow reflector stripe on one emitting facet. Power output curves and far-field beam patterns scanned in the lateral (junction) plane are shown both before and after an antireflection coating was deposited on one facet except in a narrow stripe. The stripe defines the mode-selecting reflective region. Calculations, based on a simple model of DH injection lasers, are made by estimating the magnitude of the effect. Output powers of 12 mW from one facet were obtained.

Strain induced rapid degradation of GaAs, GaAlAs DH injection lasers during CW operation

Strain induced rapid degradation of GaAs, GaAlAs DH injection lasers during CW operation