Electronic System Devices Research Articles

Investigation on the thermal characteristics of electronic system and prediction of chip temperature by machine learning

In this work, the thermal characteristics and steady-state temperatures (SST) of CPU and FPGA of electronic system in nuclear power plant are explored. Finite element analysis is performed to simulate the test process. Furthermore, three machine learning algorithms are used to predict chips temperatures at different operating conditions. It is found that when the ambient temperature is 20 °C and all the fans are power-off, the SST of the CPU and FPGA reaches 75 °C and 72 °C, respectively. While when the fans are power-on, the SST of the CPU and FPGA drops to 37.5 °C and 33 °C. When the ambient temperature increases to 55 °C and all the fans are power-on, the SST of the CPU and FPGA is 72.3 °C and 68.2 °C, respectively. The finite element model is verified and used to generate test data. Three machine learning models are verified by predicting the SST of CPU and FPGA under different operating conditions. It is found that M-SVR has better prediction ability than DT and ANN. The findings can be used for chip reliability evaluation of other electronic system devices, and provide a new method for predicting the possible steady-state temperature of chips under different service conditions.

E-Tongues/Noses Based on Conducting Polymers and Composite Materials: Expanding the Possibilities in Complex Analytical Sensing.

Conducting polymers (CPs) are extensively studied due to their high versatility and electrical properties, as well as their high environmental stability. Based on the above, their applications as electronic devices are promoted and constitute an interesting matter of research. This review summarizes their application in common electronic devices and their implementation in electronic tongues and noses systems (E-tongues and E-noses, respectively). The monitoring of diverse factors with these devices by multivariate calibration methods for different applications is also included. Lastly, a critical discussion about the enclosed analytical potential of several conducting polymer-based devices in electronic systems reported in literature will be offered.

Energy Harvesting Technologies and Equivalent Electronic Structural Models—Review

As worldwide awareness about global climate change spreads, green electronics are becoming increasingly popular as an alternative to diminish pollution. Thus, nowadays energy efficiency is a paramount characteristic in electronics systems to obtain such a goal. Harvesting wasted energy from human activities and world physical phenomena is an alternative to deal with the aforementioned problem. Energy harvesters constitute a feasible solution to harvesting part of the energy being spared. The present research work provides the tools for characterizing, designing and implementing such devices in electronic systems through their equivalent structural models.

Surface plasmons in suspended graphene: launching with in-plane gold nanoantenna and propagation properties

Graphene physics and plasmonics are two fields which, once combined, promise a variety of exciting applications. One of those applications is the integration of active nano-optoelectronic devices in electronic systems, using the fact that plasmons in graphene are tunable, highly confined and weakly damped. A crucial challenge remains before achieving these active devices: finding a platform enabling a high propagation of Graphene Plasmons Polaritons (GPPs). Suspended graphene presenting ultrahigh electron mobility has given rise to increasing interest. We numerically studied the plasmonic properties of suspended graphene. We propose a hybrid configuration and a set of conditions to launch graphene plasmons via an in-plane gold nanoantenna, for micrometric propagation of surface plasmons in suspended graphene. Finally, we propose a realistic optoelectronic device based on the use of suspended graphene.

Design of Low Noise L-Band Frequency Source

Frequency synthesizer provides frequency source for modern communication systems and computer systems. It is an essential part to the modern electronic system devices. This paper describes a wideband, frequency agile, low phase noise, low spurious frequency synthesizer. By using frequency multiplying technology, an S-band frequency source as the DDS clock is designed. The actual frequency source was tested. The test results show that the frequency synthesizer achieves the desired objectives.

Proposed Solution to the Problem of Thermal Stress Induced Failures in Medical Electronic Systems

The concept of miniaturization has propagated to all types of electronic applications. The complexity of electronic systems has been increasing due to increase in the number of functions and features offered to the users. At the same time the number of devices working per unit volume of the system has increased enormously, due to which the power density per unit volume has increased. Dissipating high power in small volumes has increased the thermal problems in all types of electronic systems, including medical gadgets. Thermal stress has been identified to be the major cause of failure of electronic devices in electronic systems, based on the analysis of failures, based on research work. The causative mechanism of failure of semiconductor device package due to thermal overstress in medical electronic systems is the differential expansion between plastic and metal parts of the device which causes a differential strain and package failure. Selection of materials with similar coefficient of thermal expansion is important to prevent thermal overstress caused failures. In this paper, we discuss a technique which uses mathematical analysis to provide a solution to this problem of selecting the suitable material to prevent differential thermal stress failures in medical electronics systems.

The effect of light illumination in photoionization of deep traps in GaN MESFETs buffer layer using an ensemble Monte Carlo simulation

Deep traps can produce serious degradation in the drain current and consequently the output power of GaN based FETs. This current collapse phenomenon represents a significant impediment to the incorporation of these devices in electronic systems. In this article trapping of hot electron behavior by deep trap centers located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation. The simulated results show the trap centers are responsible for current collapse in GaN MESFET at low temperatures. These electrical traps degrade the performance of the device at low temperature. On the opposite, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built in electric field associated with the trapped charge distribution.

Nlo Polymer Material Systems for Electro-Optic Devices

ABSTRACTNon linear optical (NLO) polymers have great potential to be fabricated into integrated electro-optic (E/O) devices for use as high speed electro-optic (E/O) switches, modulators and interconnects in computer and communication systems [1,2]. The fabrication of practical integrated E/O devices requires a material system that meets the final device requirements and can be processed using standard fabrication technologies [3]. Applications of polymer E/O devices in electronic systems have been limited by the relatively low thermal stability and poor processability of non linear optical (NLO) polymers. This paper describes a thermally stable electro-optic material system and the fabrication process to make compact integrated E/O devices for application in electronic systems. This material system consists of high thermal stability polyimide core and cladding materials. The active NLO material is a side chain polyimide that uses a new high activity and high thermal stability chromophore.

Materials Requirements for Electro-Optic Polymers (for electronic systems applications)

ABSTRACTThe field of electro-optic (EO) polymer materials for integrated optics has been developing rapidly during the past several years. Recent advances include the formulation of poled crosslinked epoxies and guest-host polyimides exhibiting thermal stability at temperatures significantly higher than that previously achieved with thermoplastic acrylate chemistry. These developments are an essential first step toward achieving practical materials exhibiting stability to manufacture, assembly, and end-use in modern electronic systems applications.Despite these developments, there is still much basic research to be performed to achieve a practical EO polymer material system. A polymer material system for integrated optics consists of a set of three compatible materials: cladding polymers, passive core polymers, and active core polymers. The three materials should ideally be derived from the same base polymer so that the layers of the entire waveguide structure have nearly identical thermal, mechanical, chemical, electrical, and optical properties. In an ideal syst', the active core material would consist of passive materials highly loaded with aligned nonlinear optical moieties exhibiting large hyperpolarizabilities and suitable size and shape for thermal stability.This paper provides a detailed review of the material requirements for EO polymer waveguide devices in electronic systems and points to new areas of research required for practical systems.

Surface-acoustic-wave devices in electronic systems

Surface-acoustic-wave (SAW) devices enable the designer of systems at signal frequencies in excess of 30 MHz to solve problems using functions previously unobtainable at these frequencies