Reactively sputtered Ta‐Si‐N films are investigated as diffusion barriers between silicon and Au layers. Analyses by backscattering spectrometry and electrical measurements on shallow n+p junction diodes reveal that an amorphous thin film approximately 110 nm thick very effectively preserves the integrity of the metallization on shallow junctions up to 30 min annealing at 750°C in vacuum. (The Au‐Si eutectic is at 360°C). At that temperature small openings appear in the Au overlayer which do not, however, affect the electrical characteristics of the diodes. Destructive metallurgical interactions occur at higher temperatures causing a shorting of the shallow junction diodes.
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