Design Of Broadband Power Amplifier Research Articles

Design of broadband power amplifier based on loop-shaped filter matching structure

A method for designing a broadband high-efficiency power amplifier (PA) based on a novel loop-shaped filter matching structure is proposed in this paper. By combining a power amplifier matching circuit and a loop-shaped filter structure, a broadband high-efficiency PA based on a new harmonic matching structure is realized. The novel loop-shaped filter can control the second and third harmonics in a wide frequency range and has a specific control effect on higher-order harmonics, which can further expand the bandwidth of class-F PA and improve efficiency. To verify its feasibility, a power amplifier with a bandwidth of 1.6 GHz-3.4 GHz, a saturated output power greater than 41 dBm, a drain efficiency of 65% -72% with a gain greater than 10dB is designed and fabricated using GaN HEMT CGH40010F transistor.

A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT.

To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively. The fabricated power amplifier was tested under continuous wave conditions, and the test results showed a peak power of 30.8 dBm at 16 GHz. At 15 to 17.5 GHz, the output power was above 30 dBm with a PAE of more than 32%. The fractional bandwidth of the 3 dB output power was 30%. The chip area was 3.3 × 1.2 mm2 and included input and output test pads.

Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network

In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure. In order to improve the efficiency of the PA, a harmonic suppression network is added at the output of the drain artificial transmission line. At the same time, a capacitor is connected in series at the input of the gate, which is used to compensate for the phase offset of the gate and increase the cut-off frequency of the PA. The final gate width of the first stage is 0.56 μm, and the other three-stage gate widths are all 0.32 μm. Over the frequency range of 2–16 GHz, the simulated results of this NDPA exhibit a power-added efficiency (PAE) of 16.6–27%, a saturated continuous wave (CW) output power of 35–37 dBm, a small signal gain of 9.1–11.6 dB, and output return losses of 5–15 dB.

Wideband Class‐F power amplifier design based on harmonic control analysis and bandwidth expansion structure

AbstractThis paper proposes a novel Class‐F broadband power amplifier design method. A Class‐F power amplifier for 1.3–2.5 GHz is fabricated by step‐matching, combining a harmonic control structure and a parasitic compensation circuit. A bandwidth expansion structure is established based on microstrip lines and capacitor. The proposed structure resolves the low efficiency caused by the coincidence of the fundamental frequency band and second harmonic frequency band, which allows the power amplifier to function properly from 1.1 to 2.5 GHz. A high‐efficiency broadband power amplifier is tested to find that the saturated output power with the proposed device is between 40.1 and 41.7 dBm, the gain is from 9.3 to 14.4 dB, and the drain efficiency is 60.8%–84.2% at 1.1–2.5 GHz frequency.

High‐efficiency broadband power amplifier design via ideal de‐embedding and direct compensation of GaN‐HEMTs parasitics

In this work, a design approach for broadband high-efficiency power amplifiers is presented. The proposed technique is based on deductive de-embedding of the nonlinear parasitics of packaged GaN-HEMT devices. A new transistor parasitics equivalent network is proposed that utilises a model-based extraction flow. A simple two-element compensation network is then used to accurately compensate the extracted nonlinear device parasitics; this enables optimum load resistance to be presented to the device current generator using a real-to-real matching network. In order to validate the proposed concept, a single-ended Class-AB power amplifier is designed and fabricated using a Wolfspeed 25-W GaN HEMT ‘CGH40025F’ transistor. At a centre frequency of 2.35 GHz, a fractional bandwidth of 55% is achieved. The measured average drain efficiency and power gain of the designed power amplifier are 71% and 10.4 dB, respectively.

High Gain Broadband Power Amplifier Design Based on Integrated Diplexing Networks

This letter presents an enhanced gain broadband power amplifier (PA) design approach that is based on using an integrated diplexer with a phase compensation network to combine PAs of narrower bandwidths (BWs) over a wider overall bandwidth PA. The input and output matching networks of each amplifier are individually synthesized using a wideband matching network. The diplexer is designed using a lowpass/highpass topology approach. The separate amplifiers are integrated with the proposed diplexer, resulting in extended bandwidth and enhanced gain. For verification purposes, a broadband PA is designed and implemented over the frequency range of 2–4 GHz. Measurements demonstrate that the output power varies between 40.1 and 41.2 dBm with a drain efficiency (DE) of 61%–75%. The proposed design achieves a high small-signal gain of 12.5–15.3 dB. The reported saturated power gain is 10.1–11.2 dB.

A UHF-band 100 W broadband hybrid GaN power amplifier based on the regional modulation of impedance distribution method

In this paper, the regional modulation of impedance distribution (RMID) method for broadband power amplifier design is presented. We design and fabricate a wideband UHF-band gallium nitride (GaN) power amplifier (PA) consists of 2-chips containing self-developed GaN high electron mobility transistors (HEMTs) on a SiC substrate with gate lengths and widths of 0.25 μm and 10 mm, respectively. The pre-matching network designed by the RMID method converts the port impedances of the device to smaller real impedances, and exchanges the lower impedance ratio for wider frequency band characteristics. The distribution curve of the impedance points is tensioned or compressed according to the characteristics of the impedance transformation paths of different matching elements. As a result, the impedance distribution curve within the broadband range shows “knotting” characteristics. Then, the smaller impedances are matched to 50 Ω by low-Q microstrip impedance transforming lines. The measured output power, gain and efficiency values of the amplifier are higher than 100 W, 16 dB and 60%, respectively across 0.3–1.0 GHz, and the fractional bandwidth is up to 108%.

Research and Design of Broadband Power Amplifier with Feedback Structure Based on ADS

The power amplifier based on the CGH40010 power tube design often needs to improve the circuit structure to ensure the stability due to its poor stability. However, this method often causes problems such as reduced amplifier gain and reduced efficiency. After the design of the input matching circuit and the output matching circuit, it still cannot be effectively improved. This paper proposes a power amplifier design scheme with a feedback structure, which improves the gain and efficiency, and the available bandwidth is effectively broadened.

Design of L-S band broadband power amplifier using microstip lines

This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA.

A trade-off design of microstrip broadband power amplifier for UHF applications

In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%.

Design of broadband power amplifier based on series of continuous inverse modes with phase shift

Design of broadband power amplifier based on series of continuous inverse modes with phase shift

Design of broadband power amplifier based on continuous class-F mode with frequency parameterization

Design of broadband power amplifier based on continuous class-F mode with frequency parameterization

Class-X—Harmonically Tuned Power Amplifiers With Maximally Flat Waveforms Suitable for Over One-Octave Bandwidth Designs

This paper proposes a new theory for harmonically tuned power amplifiers (PAs) with maximally flat waveforms, Class-X PAs. This class has been developed to achieve maximally flat waveforms. In this class, the relationship between the fundamental load impedance and the independently set second- and third-harmonic load impedances is established to maintain constant output power with constant efficiency. This relationship sets an optimum fundamental load design space when the second- and third-harmonic impedances are varied simultaneously and independently of each other. By varying the second- and third-harmonic impedances independently, higher flexibility in the design of broadband PAs is obtained. The theory of Class-X PA and its broadband characteristics were validated with an experimental design example using a Cree’s 10-W Gallium Nitride (GaN) device. This design showed a measured drain efficiency higher than 70% and output power within 3-dB variation over more than one-octave bandwidth.

Design of broadband power amplifier based on a continuous harmonic control mode

Design of broadband power amplifier based on a continuous harmonic control mode

Design of highly efficient broadband harmonic‐optimised GaN power amplifier via modified simplified real frequency technique

A design of broadband power amplifier (PA) which uses harmonic-optimised matching network (MN) is designed to maintain high efficiency. The load–pull data is used to construct the optimal impedance areas in fundamental and harmonic parts. Then, the modified simplified real frequency technique algorithm is employed to design output-MN through constructing the defined harmonic-error functions. A 10 W Cree gallium nitride high-electron-mobility transistor device CGH40010F is used to validate this method. The proposed PA has a 40% bandwidth (1.8–2.7 GHz) and a 64–81% drain efficiency. The digital pre-distortion process shows the adjacent channel leakage ratio (ACLR) is <−52 dBc at 2.25 GHz.

Design of broadband power amplifier based on a series of novel continuous inverse modes

A series of novel continuous inverse modes based on current element is proposed. The series of novel continuous inverse mode is extended by increasing the coefficient in the current equation of traditional inverse class F power amplifier (PA). The theoretical analysis shows that new current equation can provide a wide matching space for the design of broadband high efficiency PAs. To prove this theory, a wideband high efficiency PA is designed and fabricated. The experimental test results show that the drain efficiency is 65-78% in the 1.8-3G frequency range. The designed PA can obtain output power from 12.9 to 21 W and gain is from 10 to 13.3 dB in the interesting frequency range.

Design of Broadband Power Amplifiers Based on Resistive-Reactive Series of Continuous Modes

In this letter, the bandwidth of the series of continuous modes (SCMs) power amplifiers (PAs) is extended. The SCMs are composed of a series of continuous working modes between Class-B/J and Class-F continuums. The second harmonic load of the series of continuums is purely reactive. By introducing resistive part to the purely reactive second harmonic load of the series of continuous modes, the operation bandwidth of power amplifiers is expanded. A broadband PA working across 0.8–3.05 GHz (117% bandwidth) is simulated and fabricated. Experimental results show that the drain efficiencies in interesting band are 57.4%–79%. The fabricated PA can deliver output power of 10.1–20.7 W.

A 0.9–3.5 GHz high linearity, good efficiency CMOS broadband power amplifier using stagger tuning technique

AbstractA simple CMOS broadband power amplifier design with high linearity and good efficiency is proposed.The proposed power amplifier design employed stagger tuning technique that consist of two stages amplifier with different resonant frequencies to obtain a wider bandwidth from 0.9 to 3.5 GHz and low power consumption. To obtain high linearity self‐biased circuit is employed at the first stage of amplifier. The measurement results indicated that the proposed design achieves average gain of 8.5 dB, an input return loss (S11) less than −3 dB and output return loss (S22) less than −5 dB. High linearity, that is, IIP3 of 13.4 dBm at 2 GHz, power added efficiency of 34% is obtained while consuming 24.4 mW power from 1.5 V supply voltage. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2881:2884, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27212

A CMOS Broadband Power Amplifier With a Transformer-Based High-Order Output Matching Network

A transformer-based high-order output matching network is proposed for broadband power amplifier design, which provides optimum load impedance for maximum output power within a wide operating frequency range. A design methodology to convert a canonical bandpass network to the proposed matching configuration is also presented in detail. As a design example, a push-pull deep class-AB PA is implemented with a third-order output network in a standard 90 nm CMOS process. The leakage inductances of the on-chip 2:1 transformer are absorbed into the output matching to realize the third-order network with only two inductor footprints for area conservation. The amplifier achieves a 3 dB bandwidth from 5.2 to 13 GHz with 25.2 dBm peak and 21.6% peak PAE. The EVM for QPSK and 16-QAM signals both with 5 Msample/s are below 3.6% and 5.9% at the output 1 dB compression point. This verifies the PA's capability of amplifying a narrowband modulated signal whose center-tone can be programmed across a large frequency range. The measured BER for transmitting a truly broadband PRBS signal up to 7.5 Gb/s is less than 10 , demonstrating the PA's support for an instantaneous wide operation bandwidth.

Nonlinear design procedures for single-frequency and broad-band GaAs MESFET power amplifiers

The design and optimization of MESFET power amplifiers are investigated using an intermediate-level (functional) device modeling approach. The approximations involved are discussed, together with considerations of required circuit terminations at harmonic frequencies. Three variations of the approach, based on large-signal admittance, scattering, and hybrid parameters, are compared in the design of a single-frequency amplifier, and the method is extended to broadband power amplifier design. In all cases, results are validated by comparison with a full time-domain large-signal amplifier analysis, involving realistic, distributed external circuits. >