Subsurface Damage Depth Research Articles

Damage and removal behaviors of indium phosphide crystals involved in ultrasonic vibration-assisted AFM machining

Indium phosphide (InP) crystals exhibit a propensity for brittle damage during machining, categorizing them as challenging materials due to their inherent brittleness and pronounced anisotropy. Atomic force microscopy (AFM) machining serves as a crucial approach for achieving low-damage removal of such brittle crystals. Molecular dynamics simulations were conducted to investigate the vibration-assisted AFM machining of InP crystals, systematically exploring the effects of scratching force, stress distribution, and subsurface damage. The findings revealed that plastic deformation of InP crystals during vibration-assisted AFM scratching was primarily governed by mechanisms including stress-induced amorphization transitions, phase transformations, dislocations, stacking faults, and lattice distortions. Compared to conventional AFM machining, vibration-assisted AFM machining had a smaller average contact area and maintained a periodic movement pattern of contact-separation. This induced the change of chip removal from piling up in front of the cutting tool to uniform flow to both sides. Employing appropriate vibration parameters in vibration-assisted AFM significantly diminished the scratching force, stress, dislocation length, and subsurface damage depth. These results not only elucidate the material removal and damage mechanisms of InP crystals at atomic and close-to-atomic scales, but also offer theoretical guidance for parameter optimization in the vibration-assisted AFM machining of other soft and brittle crystals.

Mechanism of three-body abrasive grain grinding on GaN textured surfaces under uniform acceleration and variable depth

In this study, molecular dynamics (MD) was used to simulate the three-body grinding process on the textured surfaces of gallium nitride (GaN) and to investigate the effect of the processing parameters during the grinding process on the quality of the process and the removal mechanism of the material. The results show that the friction coefficient, normal force, tangential force, grinding temperature and potential energy increase with the increase of the accelerated interval segment, while the stress, subsurface damage depth and dislocation length decrease. Overall, higher speed value classes in the GaN grinding process are favorable for improving the surface finish quality. In addition, under the conditions of variable depth machining, with the increase of rising speed, the coefficient of friction, the tangential force, the normal force, the potential energy increase, the grinding temperature increases, the stress decreases, and the subsurface damage of the workpiece and the nucleation of dislocations are also significantly reduced, and the surface finish quality and the surface integrity of the workpiece are improved. The textured surfaces is an innovation in GaN processing.

Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering

The development of non-destructive quantitative evaluation techniques for the in-plane depth distribution of sub-surface damage (SSD) layer induced by mechanical processing of chemical mechanical polishing (CMP) finished SiC wafers is essential to reduce the occurrence of crystal defects during epitaxial growth. Until now, no wafer inspection method has been able to nondestructively and quantitatively assess the in-plane depth distribution of the SSD. This study investigates the correlation between the scattered light intensity measured nondestructively by the Laser light scattering (LLS) method and the SSD depth estimated by destructive inspection using the Dynamic AGE-ing® method, a sublimation-controlled etching and growth process, to develop a novel non-destructive SSD inspection method. As a result, it was found that there is an exponential relationship between the scattered light intensity by the LLS method on the bare wafer surface and the depth of the SSD layer that contributes to the formation of in-grown stacking faults (IGSF) during subsequent epitaxial growth. The results show that SiC wafer inspection using the novel LLS method, which introduces this relational equation, enables non-destructive and quantitative evaluation of SSD depth and in-plane distribution.

Study of stress-assisted nano-cutting mechanism of gallium arsenide

The high-performance manufacturing of hard-brittle materials by single-point diamond turning (SPDT) is a very active and challenging research area. The stress-assisted nano-cutting is a promising method for improving the machinability of hard-brittle materials. However, the simulation results in the existing stress-assisted nano-cutting model would contradict the actual condition due to the pre-stress being released before tool entry into the workpiece. A modified stress-assisted nano-cutting model with a virtual boundary between the workpiece and tool is proposed for the first time in this paper to investigate the nano-cutting process of GaAs material under different external stresses. The emergence of an atomic flow vortex during stress-assisted nano-cutting significantly enhances the quality of the machined surface, leading to a substantial reduction in both machined surface roughness (34.4 %) and subsurface damage (56.2 %), compared to the normal nano-cutting. By evaluating surface roughness, subsurface damage depth, morphological accuracy, cutting force, and removal efficiency, a pre-strain of 0.06 is determined to be the optimal pre-strain for stress-assisted nano-cutting. Moreover, the selection of optimal pre-strain remains unaffected by variations in the nano-cutting depth. TEM results demonstrate that the nano-cutting mechanism elucidated by the MD analysis accurately reflects the genuine deformation of the GaAs material.

Removal mechanism of double-diamond-abrasive-grinding GaN single crystals under graphene lubrication

Gallium nitride (GaN) is an advanced material used to manufacture chip wafers and high-power devices. Recently, grinding processing, has been applied in the fields of machinery manufacturing, aerospace, and medical devices as a highly efficient machining method. An in-depth understanding of the material removal mechanism produced by the double-grinding processes can provide guidance for the design of GaN-based nanodevices. Herein, molecular dynamics simulations were used to investigate the mechanism of removal of double-diamond-abrasive-grinding gallium nitride crystals under graphene lubrication, and a systematic study was performed to investigate the involved surface morphology, grinding force, stress distribution, and subsurface damage behavior. Results reveal that graphene can substantially enhance the wear resistance of GaN substrates by reducing surface wear, atomic displacement., potential energy, and subsurface damage, thereby playing a protective role toward the substrate. As the grinding depth increases, the grinding force and subsurface damage depth also increase. Furthermore, the effects of abrasive grain spacing on subsurface damage depth and phase change atoms were analyzed and found to have limited influence on material removal efficiency. These results deepen our understanding of material removal and protection mechanisms relative to substrates resulting from double-grinding processes as well as offer valuable insights for the rational design of abrasive wheels.

Study on the grinding surface quality of CNTs/2009AL composite material based on minimum quantity lubrication

Carbon nanotube aluminum matrix (CNTs/AL) composites are ideal lightweight and high-strength materials due to their excellent properties. However, the research on CNTs/AL composites only stays in the simulation and preparation stages, and no grinding research has been carried out. Revealing the grinding mechanism of CNTs/AL composites has far-reaching significance for the development of high-end equipment industries such as aerospace. Taking CNTs/2009AL composites as the research object, a minimum quantity lubrication (MQL) flat grinding platform was built for comparing the surface quality and defects of dry grinding and MQL grinding. The experimental results show that grinding wheel velocity was the grinding parameter that had the greatest influence on surface roughness in dry grinding and MQL grinding. The subsurface defects of dry grinding mainly included microcracks, burrs, pits, coatings, cavities, etc., and the rebound phenomenon of agglomerated carbon nanotubes. The subsurface defects of MQL grinding were only burrs and pits. The surface coating phenomenon of dry grinding increased with the increase in grinding wheel velocity, and the surface quality was improved. MQL grinding could significantly reduce grinding heat, reduce friction, and make the machined surface smoother. In dry grinding and MQL grinding, the subsurface damage depth decreased obviously with the increase in grinding wheel velocity. When the grinding wheel velocity was 30 m/s, the minimum subsurface damage depth of dry grinding and MQL grinding was 40.091 and 26.906 μm, respectively. Mastering the grinding mechanism of grinding CNTs/AL composites and the influence of grinding parameters on surface quality provides a basis for the selection of parameters and methods in grinding in industry. MQL grinding of CNTs/AL composites reduces the formation of many surface defects and improves the surface quality of the workpiece. It is an efficient, clean, and environmentally friendly processing method.

Mechanical and surface characteristics in laser-assisted machining of NiFeCr alloy: An atomic-scale understanding

This investigation explores mechanical characteristics and subsurface damage of NiFeCr alloy in laser-assisted machining through molecular dynamics simulation. The results of machining force, friction coefficient, local strain/stress, temperature distribution, subsurface damage, surface morphology, and worn volume are comprehensively explored, thereby revealing the mechanism of laser-assisted machining under different working conditions. Compared to conventional processing, average machining force, shear strain, subsurface damage, and dislocated length are all reduced in laser-assisted machining, which improves surface finish quality. Amorphization of removed chips in laser-assisted machining enhances the material removal efficiency. Analysis of various laser powers shows a decreased machining force with increasing laser power. However, residual stress and temperature rise, potentially impacting surface integrity. The subsurface damage depth exhibits nonlinearity with increasing laser energy, highlighting the competition between mechanical stress and thermal effect. The surface morphology and atomic flow demonstrate effective material removal with increasing laser power. The average machining force, friction coefficient, and subsurface damage depth show nonlinear relationships with cutting speed. The number of worn atoms is proportional to machining length and cutting speed, indicating enhanced material removal during high-speed machining.

Analytical prediction of subsurface damage depth of monocrystalline silicon in ultrasonic vibration assisted wire sawing

Analytical prediction of subsurface damage depth of monocrystalline silicon in ultrasonic vibration assisted wire sawing

Effects of chemical action of polishing medium on the material removal of SiC

The chemical action mechanism in the chemical mechanical polishing of SiC substrate remains elusive, which has great limitations on the selection of polishing solution and polishing parameters. In this paper, the cutting process of unreacted SiC (U–SiC) and the SiC reacted with H2O (R-SiC-H2O) and H2O2 (R-SiC-H2O2) was studied with an individual diamond abrasive particle by molecular dynamics simulation. The influence of chemical reaction and cutting speed on the material removal of SiC was explored by focusing on the removal rate, surface quality, machining temperature and machining stress. The simulation results showed that the number of removed atoms increased, and the surface roughness and subsurface damage depth decreased for SiC at the same cutting speed after the chemical action. Although the number of removal atoms increased with the increase of cutting speed, the surface roughness and subsurface damage depth increased at the same time. The effects of the polishing medium on the material removal process for SiC can be attributed to the decrease of surface hardness and Si–C bonding energy after the reaction of the polishing medium and SiC. The results provide a guidance for the selection of chemical mechanical polishing systems and machining parameters.

Molecular dynamics simulation of the scratching process of GaAs with different crystal orientations.

In order to further improve the manufacturing technology of resonator facet of GaAs (gallium arsenide)-based laser, the scratching process of GaAs was simulated by molecular dynamics. Models of GaAs crystals with different orientations, including GaAs [100], GaAs [110], and GaAs [111], were generated, followed by scratch simulations on these models. The surface characteristics of scratches, damage width, subsurface damage, stack height, and the distribution and activity characteristics of dislocations were analyzed based on the simulation results. The results show that there are obvious anisotropy in the deformation of different crystal orientation during the scratching process of GaAs. Surface features, damage width, subsurface damage, and dislocation dynamics during scraping in GaAs crystals strongly depend on crystal orientation. It was also observed that GaAs exhibits distinct characteristics of dislocation activity during the scratching process, depending on its crystal orientation. In addition, GaAs [110] crystal direction has the smallest maximum damage width and subsurface damage depth. The maximum of maximum damage width is in GaAs [100] crystal direction, and the maximum subsurface damage depth is in GaAs [111] crystal direction. In addition, the stacking height is maximum when GaAs [100] is scraped and minimum when GaAs [110] is scraped. The engraving quality of GaAs materials was investigated utilizing the LAMMPS software through molecular dynamics simulations, while observations were facilitated using the OVITO software. The MD simulation was conducted employing the NPT ensemble, with the temperature fixed at 300 K. A time step of 2 fs was utilized, and the total duration of the MD simulation spanned 600 ps.

Study on the impact of ultrasonic vibration-assisted grinding of glass-ceramics on surface/subsurface damage mechanism

PurposeAn investigation was conducted into the impact of various process parameters on the surface and subsurface quality of glass-ceramic materials, as well as the mechanism of material removal and crack formation, through the use of ultrasonic-assisted grinding.Design/methodology/approachA mathematical model of crack propagation in ultrasonic-assisted grinding was established, and the mechanism of crack formation was described through the model. A series of simulations and experiments were conducted to investigate the impact of process parameters on crack depth, surface roughness, and surface topography during ultrasonic-assisted surface and axial grinding. Additionally, the mechanism of crack formation was explored.FindingsDuring ultrasonic-assisted grinding, the average grinding forces are between 0.4–1.0 N, which is much smaller than that of ordinary grinding (1.0–3.5 N). In surface grinding, the maximum surface stresses between the workpiece and the tool gradually decrease with the tool speed. The surface stresses of the workpiece increase with the grinding depth, and the depth of subsurface cracks increases with the grinding depth. With the increase of the axial grinding speed, the subsurface damage depth increases. The roughness increases from 0.780um/1.433um.Originality/valueA mathematical model of crack propagation in ultrasonic-assisted grinding was established, and the mechanism of crack formation was described through the model. The deformation involved in the grinding process is large, and the FEM-SPH modeling method is used to solve the problem that the results of the traditional finite element method are not convergent and the calculation efficiency is low.

Ultra-low damage processing of silicon wafer with an innovative and optimized nonwoven grind-polishing wheel

Silicon is essential to the production of integrated circuits and optical components. Grinding is a commonly used method of silicon surface machining, but it often leads to surface and subsurface damage. These damages need to be removed by subsequent processes, typically through polishing. The surface quality generated by grinding directly impacts the cost of polishing. To enhance the quality of the grinding surface and reduce the time and cost of polishing, a grind-polishing wheel with a different structure from the conventional diamond wheel was developed. This wheel utilized ultrafine zirconia with grit size of 200 nm as abrasives and nonwoven as substrate to support the abrasives. Furthermore, to optimize the wheel and achieve better grinding performance, various wheels with different abrasive mass fractions and elastic moduli were fabricated and grinding experiments were conducted. The surface integrity of processed silicon and the material removal rate (MRR) were used to compare the grinding performance of the various wheels. After optimization, the MRR of the grind-polishing wheel reaches its peak at 0.81 μm/min. The silicon wafer ground with the grind-polishing wheel exhibited a surface roughness Sa of 0.51 nm and a subsurface damage depth of 74 nm, which is close to the effect of chemical mechanical polishing processing. Compared to conventional diamond grinding wheel (mesh size of #5000), the optimized grind-polishing wheel is better suited for semi-fine finishing and can significantly reduce the cost and time of polishing.

Atomistic analysis on implantation effects of hydrogen ions and copper ions into 4H-SiC

The microstructure evolution of 4H-SiC under the implantation of hydron ions and copper ions was investigated using molecular dynamics (MD) simulations and experimental analysis. MD models were developed to simulate the implantation of single Cu2+ and H+ ions into SiC, analyzing lattice damage, amorphous defects, and temperature distribution. H+ ion implantation resulted in a higher number of amorphous atoms compared to Cu2+ ions. The maximum atomic temperature during Cu2+ ion implantation was significantly higher (1635 K) than during H+ ion implantation (950 K), although the volume of the temperature rise region was larger in the H+ model. Cu2+ ions induced more severe lattice vibrations than H+ ions. Atom movement along regions of weak lattice binding energy was observed. The study also examined overlapping multiple ion implantations, considering ion type, initial energy, and incident angle. Cu2+ ions exhibited smaller sputtering yield, projection range, number of amorphous atoms, and energy increment compared to H+ ions. A 0° incident angle resulted in higher sputtering yield and increased amorphous structure formation due to the channeling effect, which was more pronounced in the H+ model. The experimental results demonstrate that compared to Cu2+ ions, H+ ions have a greater impact on the surface peak roughness, sub-surface damage depth, and surface damage of SiC samples. It can provide a reliable guidance for selecting process parameters and the types of ions to implant.

High-performance grinding of ceramic matrix composites

Ceramic matrix composites (CMCs) are highly promising materials for the next generation of aero-engines. However, machining of CMCs suffers from low efficiency and poor surface finish, which presents an obstacle to their wider application. To overcome these problems, this study investigates high-efficiency deep grinding of CMCs, focusing on the effects of grinding depth. The results show that both the surface roughness and the depth of subsurface damage (SSD) are insensitive to grinding depth. The material removal rate can be increased sixfold by increasing the grinding depth, while the surface roughness and SSD depth increase by only about 10%. Moreover, it is found that the behavior of material removal is strongly dependent on grinding depth. As the grinding depth is increased, fibers are removed in smaller sizes, with the fiber length in chips being reduced by about 34%. However, too large a grinding depth will result in blockage by chip powder, which leads to a dramatic increase in the ratio of tangential to normal grinding forces. This study demonstrates that increasing the depth of cut is an effective approach to improve the machining efficiency of CMCs, while maintaining a good surface finish. It provides the basis for the further development of high-performance grinding methods for CMCs, which should facilitate their wider application.

Evolution mechanism of subsurface damage during laser machining process of fused silica

The machining-induced subsurface damage (SSD) on fused silica optics would incur damage when irradiated by intense lasers, which severely restricts the service life of fused silica optics. The high absorption of fused silica to 10.6 µm makes it possible to utilize pulsed CO2 laser to remove and characterize SSD by layer-by-layer ablation, which improves its laser-induced damage threshold. However, thermal stress during the laser ablation process may have an impact on SSD, leading to extension. Still, the law of SSD morphology evolution mechanism has not been clearly revealed. In this work, a multi-physics simulated model considering light field modulation is established to reveal the evolution law of radial SSD during the laser layer-by-layer ablation process. Based on the simulation of different characteristic structural parameters, two evolution mechanisms of radial SSD are revealed, and the influence of characteristic structural parameters on SSD is also elaborated. By prefabricating the SSD by femtosecond laser, the measurements of SSD during CO2 laser layer-by-layer ablation experiments are consistent with the simulated results, and three stages of SSD depth variation under two evolution processes are further proposed. The findings of this study provide theoretical guidance for effectively characterizing SSD based on laser layer-by-layer ablation strategies on fused silica optics.

Micromechanical study of nano-cutting metal-ceramic WC/Cu by diamond tools

In this paper, the effect of the distribution of ceramic particles WC in Cu matrix on the nano-cutting behavior was investigated using molecular dynamics, and the cutting force, friction coefficient, machined surface quality, sub-surface damage depth, atomic displacement and internal defects were systematically studied, and the performance comparison at different cutting speeds was also investigated. It was found that due to the location of the WC phase, the overall removal of the material by the tool can be divided into the following three ways: When WC particles are above the cutting plane, there is less fluctuation in cutting forces and friction coefficients, and less impact on machined surface and subsurface damage; When the WC particles are below the cutting plane, the fluctuation of cutting force and friction coefficient is slow. Meanwhile, shallow craters are produced at the WC location; When the center of mass of WC particles is on the same level as the cutting plane, the cutting force and friction coefficient fluctuate drastically, the quality of the machined surface deteriorates sharply, and at the same time the hard particles pulled out by the tool remain on the machined surface. It was also found that the WC particles underwent different degrees of counterclockwise deflection in the three stages and caused a diversion of the atomic displacement in front of the tool. In addition, different degrees of dislocation plugging are formed between the WC and the tool at different positions, and the density of dislocation lines increases, which makes the substrate near the WC particles strengthened.

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Elucidating the complex interactions between the work material and abrasives during grinding of gallium nitride (GaN) single crystals is an active and challenging research area. In this study, molecular dynamics simulations were performed on double-grits interacted grinding of GaN crystals; and the grinding force, coefficient of friction, stress distribution, plastic damage behaviors, and abrasive damage were systematically investigated. The results demonstrated that the interacted distance in both radial and transverse directions achieved better grinding quality than that in only one direction. The grinding force, grinding induced stress, subsurface damage depth, and abrasive wear increase as the transverse interacted distance increases. However, there was no clear correlation between the interaction distance and the number of atoms in the phase transition and dislocation length. Appropriate interacted distances between abrasives can decrease grinding force, coefficient of friction, grinding induced stress, subsurface damage depth, and abrasive wear during the grinding process. The results of grinding tests combined with cross-sectional transmission electron micrographs validated the simulated damage results, i.e. amorphous atoms, high-pressure phase transition, dislocations, stacking faults, and lattice distortions. The results of this study will deepen our understanding of damage accumulation and material removal resulting from coupling between abrasives during grinding and can be used to develop a feasible approach to the wheel design of ordered abrasives.

Prediction of Subsurface Microcrack Damage Depth Based on Surface Roughness in Diamond Wire Sawing of Monocrystalline Silicon.

In diamond wire saw cutting monocrystalline silicon (mono-Si), the material brittleness removal can cause microcrack damage in the subsurface of the as-sawn silicon wafer, which has a significant impact on the mechanical properties and subsequent processing steps of the wafers. In order to quickly and non-destructively obtain the subsurface microcrack damage depth (SSD) of as-sawn silicon wafers, this paper conducted research on the SSD prediction model for diamond wire saw cutting of mono-Si, and established the relationship between the SSD and the as-sawn surface roughness value (SR) by comprehensively considering the effect of tangential force and the influence of the elastic stress field and residual stress field below the abrasive on the propagation of median cracks. Furthermore, the theoretical relationship model between SR and SSD has been improved by adding a coefficient considering the influence of material ductile regime removal on SR values based on experiments sawing mono-Si along the (111) crystal plane, making the theoretical prediction value of SSD more accurate. The research results indicate that a decrease in wire speed and an increase in feed speed result in an increase in SR and SSD in silicon wafers. There is a non-linear increasing relationship between silicon wafer SSD and SR, with SSD = 21.179 Ra4/3. The larger the SR, the deeper the SSD, and the smaller the relative error of SSD between the theoretical predicted and experimental measurements. The research results provide a theoretical and experimental basis for predicting silicon wafer SSD in diamond wire sawing and optimizing the process.

On the surface integrity of machined aero-engine grade Ni-based superalloy billets produced by the field-assisted sintering technology (FAST) route

High performance powder-based Ni-based superalloys exhibit exceptional in-service properties at elevated temperature, however this leads to reduced machinability and the potential for significant machining induced damage. Field assisted sintering technology (FAST) is capable of consolidating powder rapidly and efficiently, allowing for precise control of the microstructure via the dissolution of strengthening phases. In this study, subsolvus and supersolvus dwell temperatures were utilised to produce fine and coarse grain forms of an advanced Ni-based disk alloy. Surface integrity and machining forces were then evaluated after single point turning for a range of surface speeds. Higher cutting forces and lower depths of subsurface damage were generated when machining the fine grain (subsolvus) material when compared to the coarser grained (supersolvus) material. For both material conditions tested, higher surface speeds led to a reduced depth of subsurface deformation due to increased local temperatures, promoting workpiece softening. In addition, at higher cutting speeds the deformation of near surface γ’ precipitates were observed to be greater. These results demonstrate that the FAST process can be utilised to control microstructure, and as a result, tailor the machinability of Ni-based superalloy material.

Effect of diamond grain shape on gallium nitride nano-grinding process

In the grinding process, the quality of the product in the process is affected by many factors. In order to improve the processing quality and take into account the processing efficiency, the selection of a reasonable abrasive grain shape can be considered. This is a low-cost and highly feasible approach. In this article, the molecular dynamics method was employed to simulate the process of grinding GaN with four common synthetic diamond of abrasive grains (spherical, octahedron, cubic and cub-octahedron), and the surface morphology, material removal rate, temperature, potential energy, grinding force, substrate structure deformation, subsurface damage and dislocation were investigated. The results show that the cubic abrasive grain has the highest material removal rate with the number of chip atoms per unit area about 1.68 times that of the cub-octahedron abrasive grain. The lowest subsurface temperature of the octahedron abrasive grain during processing is 498 K. In contrast, the other three grits have similar subsurface temperatures of 540 K, 535 K and 545 K, respectively. The tangential force per unit area of octahedron abrasive grain is about 0.68761 (spherical: 0.23987, cubic: 0.4476, cubo-octahedral: 0.4314), but its potential energy is the most stable during processing. The shape of the abrasive grain has no significant effect on the coefficient of friction, while it has a significant effect on the subsurface damage. The depth of subsurface damage is the smallest for both cubic and cub-octahedron abrasive grain (2.4 nm), while cub-octahedron abrasive grain is more capable of promoting the generation of dislocations within the substrate. In addition, the performance of cubic and cub-octahedron abrasive grain at different grinding depths was further explored. Number of chip atoms, temperature, grinding force and subsurface damage all increase with the grinding depth. Nevertheless, the machining performance of cubic abrasive grain is still superior to that of cub-octahedron abrasive grain when the grinding depth is more than 1 nm. The outcome of this study may provide a micro-scale insight into the selection of abrasive grain shapes for processing GaN substrates.