This study aims to determine the optimized cutting conditions for diamond wire sawing of polycrystalline silicon (poly-Si) wafers using a laboratory machine-tool that employs continuous cutting movement and reach cutting conditions similar to those in the industry. The experimental cutting was carried out following a central composite design, varying the wire cutting speed (vc) and feed rate (vf). A response surface methodology was employed to find the optimized cutting conditions for minimum surface roughness and subsurface micro-crack depth of the as-sawn poly-Si wafer. The results showed that the as-sawn poly-Si exhibited ductile scratches and fragile fractures in its surface morphology, with high vc and low vf resulting in a smooth surface. The response surfaces indicated that increasing vf led to increased Ra and Rq values, while increasing vc reduced them. Median micro-cracks were slightly inclined in the subsurface region, with the response surface indicating that their depth reduced with increasing vc and decreasing vf. The vf/vc ratio significantly affected surface integrity, with a lower vf/vc ratio being more suitable for reaching a smoother surface and shallower subsurface damage. The following material removal mechanisms was identified: optimal ductile region, ductile-to-brittle transition, brittle-ductile mixture region, and brittle region. Simulations using the response surface models indicated minimum values of Ra = 0.35 μm, Rq = 0.48 μm and SSD = 3.29 μm. Thus, this study provides a processing parameter window for diamond wire sawing of poly-Si wafers, which could be useful for both the photovoltaic and microelectronic industries.